NL8402764A - Schakeling voor het opwekken van een substraatvoorspanning. - Google Patents

Schakeling voor het opwekken van een substraatvoorspanning. Download PDF

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Publication number
NL8402764A
NL8402764A NL8402764A NL8402764A NL8402764A NL 8402764 A NL8402764 A NL 8402764A NL 8402764 A NL8402764 A NL 8402764A NL 8402764 A NL8402764 A NL 8402764A NL 8402764 A NL8402764 A NL 8402764A
Authority
NL
Netherlands
Prior art keywords
control
circuit
capacitance
transistor
electrode
Prior art date
Application number
NL8402764A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8402764A priority Critical patent/NL8402764A/nl
Priority to CA000490031A priority patent/CA1232953A/fr
Priority to US06/772,790 priority patent/US4705966A/en
Priority to EP85201406A priority patent/EP0174694B1/fr
Priority to DE8585201406T priority patent/DE3568648D1/de
Priority to IE2213/85A priority patent/IE57080B1/en
Priority to JP60199618A priority patent/JPH083765B2/ja
Publication of NL8402764A publication Critical patent/NL8402764A/nl

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Control Of Electrical Variables (AREA)
  • Dc-Dc Converters (AREA)
  • Logic Circuits (AREA)
NL8402764A 1984-09-11 1984-09-11 Schakeling voor het opwekken van een substraatvoorspanning. NL8402764A (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL8402764A NL8402764A (nl) 1984-09-11 1984-09-11 Schakeling voor het opwekken van een substraatvoorspanning.
CA000490031A CA1232953A (fr) 1984-09-11 1985-09-05 Circuit generateur de tensions de polarisation pour substrat
US06/772,790 US4705966A (en) 1984-09-11 1985-09-05 Circuit for generating a substrate bias
EP85201406A EP0174694B1 (fr) 1984-09-11 1985-09-06 Circuit générant une tension de polarisation de substrat
DE8585201406T DE3568648D1 (en) 1984-09-11 1985-09-06 Circuit for generating a substrate bias
IE2213/85A IE57080B1 (en) 1984-09-11 1985-09-09 Circuit for generating a substrate bias
JP60199618A JPH083765B2 (ja) 1984-09-11 1985-09-11 基板バイアス発生回路

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8402764 1984-09-11
NL8402764A NL8402764A (nl) 1984-09-11 1984-09-11 Schakeling voor het opwekken van een substraatvoorspanning.

Publications (1)

Publication Number Publication Date
NL8402764A true NL8402764A (nl) 1986-04-01

Family

ID=19844441

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8402764A NL8402764A (nl) 1984-09-11 1984-09-11 Schakeling voor het opwekken van een substraatvoorspanning.

Country Status (7)

Country Link
US (1) US4705966A (fr)
EP (1) EP0174694B1 (fr)
JP (1) JPH083765B2 (fr)
CA (1) CA1232953A (fr)
DE (1) DE3568648D1 (fr)
IE (1) IE57080B1 (fr)
NL (1) NL8402764A (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3681540D1 (de) * 1985-08-26 1991-10-24 Siemens Ag Integrierte schaltung in komplementaerer schaltungstechnik mit einem substratvorspannungs-generator.
KR960012249B1 (ko) * 1987-01-12 1996-09-18 지멘스 악티엔게젤샤프트 래치업 방지회로를 가진 cmos 집적회로장치
JPS63279491A (ja) * 1987-05-12 1988-11-16 Mitsubishi Electric Corp 半導体ダイナミツクｒａｍ
FR2616602B1 (fr) * 1987-06-12 1989-10-13 Thomson Semiconducteurs Circuit de remise sous tension pour circuit integre en technologie mos
JP2501590B2 (ja) * 1987-07-29 1996-05-29 沖電気工業株式会社 半導体装置の駆動回路
JPH0783254B2 (ja) * 1989-03-22 1995-09-06 株式会社東芝 半導体集積回路
JP2645142B2 (ja) * 1989-06-19 1997-08-25 株式会社東芝 ダイナミック型ランダムアクセスメモリ
JP2704459B2 (ja) * 1989-10-21 1998-01-26 松下電子工業株式会社 半導体集積回路装置
JP2805991B2 (ja) * 1990-06-25 1998-09-30 ソニー株式会社 基板バイアス発生回路
US5117125A (en) * 1990-11-19 1992-05-26 National Semiconductor Corp. Logic level control for impact ionization sensitive processes
JP2575956B2 (ja) * 1991-01-29 1997-01-29 株式会社東芝 基板バイアス回路
JP2724919B2 (ja) * 1991-02-05 1998-03-09 三菱電機株式会社 基板バイアス発生装置
DE4130191C2 (de) * 1991-09-30 1993-10-21 Samsung Electronics Co Ltd Konstantspannungsgenerator für eine Halbleitereinrichtung mit kaskadierter Auflade- bzw. Entladeschaltung
JP2937591B2 (ja) * 1991-12-09 1999-08-23 沖電気工業株式会社 基板バイアス発生回路
US5182529A (en) * 1992-03-06 1993-01-26 Micron Technology, Inc. Zero crossing-current ring oscillator for substrate charge pump
DE4221575C2 (de) * 1992-07-01 1995-02-09 Ibm Integrierter CMOS-Halbleiterschaltkreis und Datenverarbeitungssystem mit integriertem CMOS-Halbleiterschaltkreis
US5412257A (en) * 1992-10-20 1995-05-02 United Memories, Inc. High efficiency N-channel charge pump having a primary pump and a non-cascaded secondary pump
US5461591A (en) * 1993-12-02 1995-10-24 Goldstar Electron Co., Ltd. Voltage generator for semiconductor memory device
US5528193A (en) * 1994-11-21 1996-06-18 National Semiconductor Corporation Circuit for generating accurate voltage levels below substrate voltage
US5874849A (en) * 1996-07-19 1999-02-23 Texas Instruments Incorporated Low voltage, high current pump for flash memory
US6064250A (en) * 1996-07-29 2000-05-16 Townsend And Townsend And Crew Llp Various embodiments for a low power adaptive charge pump circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4229667A (en) * 1978-08-23 1980-10-21 Rockwell International Corporation Voltage boosting substrate bias generator
JPS6038028B2 (ja) * 1979-07-23 1985-08-29 三菱電機株式会社 基板電位発生装置
US4336466A (en) * 1980-06-30 1982-06-22 Inmos Corporation Substrate bias generator
JPS583328A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd 基板電圧発生回路
JPS5840631A (ja) * 1981-09-04 1983-03-09 Hitachi Ltd 電圧発生回路
US4438346A (en) * 1981-10-15 1984-03-20 Advanced Micro Devices, Inc. Regulated substrate bias generator for random access memory
US4585954A (en) * 1983-07-08 1986-04-29 Texas Instruments Incorporated Substrate bias generator for dynamic RAM having variable pump current level

Also Published As

Publication number Publication date
EP0174694A1 (fr) 1986-03-19
IE57080B1 (en) 1992-04-22
IE852213L (en) 1986-03-11
JPH083765B2 (ja) 1996-01-17
CA1232953A (fr) 1988-02-16
US4705966A (en) 1987-11-10
EP0174694B1 (fr) 1989-03-08
JPS6171658A (ja) 1986-04-12
DE3568648D1 (en) 1989-04-13

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A1B A search report has been drawn up
BV The patent application has lapsed