NL7405759A - - Google Patents

Info

Publication number
NL7405759A
NL7405759A NL7405759A NL7405759A NL7405759A NL 7405759 A NL7405759 A NL 7405759A NL 7405759 A NL7405759 A NL 7405759A NL 7405759 A NL7405759 A NL 7405759A NL 7405759 A NL7405759 A NL 7405759A
Authority
NL
Netherlands
Application number
NL7405759A
Other versions
NL182606C (nl
NL182606B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7405759A publication Critical patent/NL7405759A/xx
Publication of NL182606B publication Critical patent/NL182606B/xx
Application granted granted Critical
Publication of NL182606C publication Critical patent/NL182606C/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/1733—Controllable logic circuits
    • H03K19/1735—Controllable logic circuits by wiring, e.g. uncommitted logic arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/923—Active solid-state devices, e.g. transistors, solid-state diodes with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NLAANVRAGE7405759,A 1973-04-30 1974-04-29 Geintegreerde schakeling, waarvan de deelschakelingen zijn samengesteld uit in een gemeenschappelijk halfgeleiderlichaam gevormde elementen van een of meer identieke basiscellen. NL182606C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2055073A GB1440512A (en) 1973-04-30 1973-04-30 Universal array using complementary transistors

Publications (3)

Publication Number Publication Date
NL7405759A true NL7405759A (de) 1974-11-01
NL182606B NL182606B (nl) 1987-11-02
NL182606C NL182606C (nl) 1988-04-05

Family

ID=10147746

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7405759,A NL182606C (nl) 1973-04-30 1974-04-29 Geintegreerde schakeling, waarvan de deelschakelingen zijn samengesteld uit in een gemeenschappelijk halfgeleiderlichaam gevormde elementen van een of meer identieke basiscellen.

Country Status (8)

Country Link
US (1) US3943551A (de)
JP (1) JPS5516453B2 (de)
CA (1) CA993118A (de)
DE (1) DE2420759C2 (de)
FR (1) FR2227638B1 (de)
GB (1) GB1440512A (de)
IT (1) IT1012593B (de)
NL (1) NL182606C (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4034243A (en) * 1975-12-19 1977-07-05 International Business Machines Corporation Logic array structure for depletion mode-FET load circuit technologies
US4032962A (en) * 1975-12-29 1977-06-28 Ibm Corporation High density semiconductor integrated circuit layout
US5095356A (en) * 1977-05-31 1992-03-10 Fujitsu Limited Cellular integrated circuit and hierarchical method
DE2823555A1 (de) * 1977-05-31 1978-12-07 Fujitsu Ltd Zellenfoermige integrierte schaltung
US4969029A (en) * 1977-11-01 1990-11-06 Fujitsu Limited Cellular integrated circuit and hierarchial method
JPS5925381B2 (ja) * 1977-12-30 1984-06-16 富士通株式会社 半導体集積回路装置
CA1116307A (en) * 1978-04-01 1982-01-12 Stephen J. Boardman Semi-conductor structures
JPS5844592Y2 (ja) * 1979-04-16 1983-10-08 富士通株式会社 半導体集積回路装置
JPS57160144A (en) * 1981-03-27 1982-10-02 Fujitsu Ltd Semiconductor integrated circuit device
JPS5890758A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 相補形集積回路装置
JPS58101525A (ja) * 1981-12-14 1983-06-16 Fujitsu Ltd 論理回路
JPS58139445A (ja) * 1982-02-15 1983-08-18 Nec Corp 半導体集積回路装置
FR2524206B1 (fr) * 1982-03-26 1985-12-13 Thomson Csf Mat Tel Circuit integre prediffuse, et procede d'interconnexion des cellules de ce circuit
IT1191188B (it) * 1982-04-15 1988-02-24 Cselt Centro Studi Lab Telecom Cella elementare per reti di porte logiche a circuito integrato
GB2122417B (en) * 1982-06-01 1985-10-09 Standard Telephones Cables Ltd Integrated circuits
GB2121601B (en) * 1982-06-01 1986-01-29 Standard Telephones Cables Ltd Uncommitted logic integrated circuit array
US4511914A (en) * 1982-07-01 1985-04-16 Motorola, Inc. Power bus routing for providing noise isolation in gate arrays
JPS5925260A (ja) * 1982-08-02 1984-02-09 Fujitsu Ltd 半導体装置
JPS5929440A (ja) * 1982-08-11 1984-02-16 Hitachi Ltd 半導体集積回路装置
JPS5943548A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd 半導体集積回路装置
JPS5969948A (ja) * 1982-10-15 1984-04-20 Fujitsu Ltd マスタ−スライス型半導体集積回路
US4742383A (en) * 1983-01-12 1988-05-03 International Business Machines Corporation Multi-function FET masterslice cell
JPH073863B2 (ja) * 1983-12-08 1995-01-18 株式会社東芝 半導体集積回路
JPS601017U (ja) * 1984-05-16 1985-01-07 セイコーエプソン株式会社 演算増幅器
JPS6114734A (ja) * 1984-06-29 1986-01-22 Fujitsu Ltd 半導体集積回路装置及びその製造方法
JPS6124250A (ja) * 1984-07-13 1986-02-01 Nippon Gakki Seizo Kk 半導体集積回路装置
US4724531A (en) * 1984-07-18 1988-02-09 Hughes Aircraft Company Gate array with bidirectional symmetry
EP0319522B1 (de) * 1984-07-18 1994-06-01 Hughes Aircraft Company Speicher mit programmierbarer Wortlänge in einem Gatterfeld mit bidirektionaler Symmetrie
US4652777A (en) * 1984-12-18 1987-03-24 Cline Ronald L CMOS programmable logic array
JPS60242639A (ja) * 1985-03-25 1985-12-02 Fujitsu Ltd 半導体集積回路装置
JPS60242641A (ja) * 1985-03-25 1985-12-02 Fujitsu Ltd 半導体集積回路装置
CA1238986A (en) * 1986-02-06 1988-07-05 Stephen K. Sunter Integrated circuit chip manufacture
JPS62216342A (ja) * 1986-03-18 1987-09-22 Toshiba Corp 半導体集積回路装置の製造方法
US4885485A (en) * 1988-08-30 1989-12-05 Vtc Incorporated CMOS Output buffer providing mask programmable output drive current
JPH0793414B2 (ja) * 1992-10-19 1995-10-09 株式会社リコー Ｌｓｉマスタスライスチップ
EP0649173A3 (de) * 1993-10-13 1995-07-26 Kawasaki Steel Co Halbleiterbauelement geeignet für eine "master slice" Behandlung und Herstellungsverfahren.
JP3256084B2 (ja) 1994-05-26 2002-02-12 株式会社半導体エネルギー研究所 半導体集積回路およびその作製方法
JP3926011B2 (ja) * 1997-12-24 2007-06-06 株式会社ルネサステクノロジ 半導体装置の設計方法
US7592841B2 (en) * 2006-05-11 2009-09-22 Dsm Solutions, Inc. Circuit configurations having four terminal JFET devices
US7646233B2 (en) * 2006-05-11 2010-01-12 Dsm Solutions, Inc. Level shifting circuit having junction field effect transistors
US20080024188A1 (en) * 2006-07-28 2008-01-31 Chou Richard K Junction field effect transistor level shifting circuit
US7525163B2 (en) * 2006-10-31 2009-04-28 Dsm Solutions, Inc. Semiconductor device, design method and structure
US20080099796A1 (en) * 2006-11-01 2008-05-01 Vora Madhukar B Device with patterned semiconductor electrode structure and method of manufacture
US20080265936A1 (en) * 2007-04-27 2008-10-30 Dsm Solutions, Inc. Integrated circuit switching device, structure and method of manufacture
US7710148B2 (en) * 2008-06-02 2010-05-04 Suvolta, Inc. Programmable switch circuit and method, method of manufacture, and devices and systems including the same
US10489548B2 (en) * 2017-05-26 2019-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit and method for manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508209A (en) * 1966-03-31 1970-04-21 Ibm Monolithic integrated memory array structure including fabrication and package therefor
DE1789138B2 (de) * 1967-06-23 1976-12-09 Ausscheidung aus: 17 65 632 RCA Corp., New York, N.Y. (V.St.A.) Aus einheitszellen aufgebaute lsi- schaltung
US3641405A (en) * 1967-10-13 1972-02-08 Gen Electric Field-effect transistors with superior passivating films and method of making same
US3558992A (en) * 1968-06-17 1971-01-26 Rca Corp Integrated circuit having bonding pads over unused active area components
US3771217A (en) * 1971-04-16 1973-11-13 Texas Instruments Inc Integrated circuit arrays utilizing discretionary wiring and method of fabricating same

Also Published As

Publication number Publication date
DE2420759C2 (de) 1982-09-02
CA993118A (en) 1976-07-13
FR2227638B1 (de) 1978-08-11
JPS5028796A (de) 1975-03-24
NL182606C (nl) 1988-04-05
GB1440512A (en) 1976-06-23
FR2227638A1 (de) 1974-11-22
NL182606B (nl) 1987-11-02
DE2420759A1 (de) 1974-11-07
IT1012593B (it) 1977-03-10
US3943551A (en) 1976-03-09
JPS5516453B2 (de) 1980-05-02

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee