NL182606C - Geintegreerde schakeling, waarvan de deelschakelingen zijn samengesteld uit in een gemeenschappelijk halfgeleiderlichaam gevormde elementen van een of meer identieke basiscellen. - Google Patents
Geintegreerde schakeling, waarvan de deelschakelingen zijn samengesteld uit in een gemeenschappelijk halfgeleiderlichaam gevormde elementen van een of meer identieke basiscellen.Info
- Publication number
- NL182606C NL182606C NLAANVRAGE7405759,A NL7405759A NL182606C NL 182606 C NL182606 C NL 182606C NL 7405759 A NL7405759 A NL 7405759A NL 182606 C NL182606 C NL 182606C
- Authority
- NL
- Netherlands
- Prior art keywords
- elements
- integrated circuit
- cells formed
- basic cells
- conductor body
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/1733—Controllable logic circuits
- H03K19/1735—Controllable logic circuits by wiring, e.g. uncommitted logic arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/923—Active solid-state devices, e.g. transistors, solid-state diodes with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- General Engineering & Computer Science (AREA)
- Computing Systems (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2055073A GB1440512A (en) | 1973-04-30 | 1973-04-30 | Universal array using complementary transistors |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7405759A NL7405759A (de) | 1974-11-01 |
NL182606B NL182606B (nl) | 1987-11-02 |
NL182606C true NL182606C (nl) | 1988-04-05 |
Family
ID=10147746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7405759,A NL182606C (nl) | 1973-04-30 | 1974-04-29 | Geintegreerde schakeling, waarvan de deelschakelingen zijn samengesteld uit in een gemeenschappelijk halfgeleiderlichaam gevormde elementen van een of meer identieke basiscellen. |
Country Status (8)
Country | Link |
---|---|
US (1) | US3943551A (de) |
JP (1) | JPS5516453B2 (de) |
CA (1) | CA993118A (de) |
DE (1) | DE2420759C2 (de) |
FR (1) | FR2227638B1 (de) |
GB (1) | GB1440512A (de) |
IT (1) | IT1012593B (de) |
NL (1) | NL182606C (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4034243A (en) * | 1975-12-19 | 1977-07-05 | International Business Machines Corporation | Logic array structure for depletion mode-FET load circuit technologies |
US4032962A (en) * | 1975-12-29 | 1977-06-28 | Ibm Corporation | High density semiconductor integrated circuit layout |
US4969029A (en) * | 1977-11-01 | 1990-11-06 | Fujitsu Limited | Cellular integrated circuit and hierarchial method |
US5095356A (en) * | 1977-05-31 | 1992-03-10 | Fujitsu Limited | Cellular integrated circuit and hierarchical method |
NL185431C (nl) * | 1977-05-31 | 1990-04-02 | Fujitsu Ltd | Geintegreerde halfgeleiderschakeling, omvattende een halfgeleiderlichaam met ten minste twee basisschakelingen van complementaire veldeffekttransistoren met geisoleerde stuurelektrode. |
JPS5925381B2 (ja) * | 1977-12-30 | 1984-06-16 | 富士通株式会社 | 半導体集積回路装置 |
CA1116307A (en) * | 1978-04-01 | 1982-01-12 | Stephen J. Boardman | Semi-conductor structures |
JPS5844592Y2 (ja) * | 1979-04-16 | 1983-10-08 | 富士通株式会社 | 半導体集積回路装置 |
JPS57160144A (en) * | 1981-03-27 | 1982-10-02 | Fujitsu Ltd | Semiconductor integrated circuit device |
JPS5890758A (ja) * | 1981-11-25 | 1983-05-30 | Mitsubishi Electric Corp | 相補形集積回路装置 |
JPS58101525A (ja) * | 1981-12-14 | 1983-06-16 | Fujitsu Ltd | 論理回路 |
JPS58139445A (ja) * | 1982-02-15 | 1983-08-18 | Nec Corp | 半導体集積回路装置 |
FR2524206B1 (fr) * | 1982-03-26 | 1985-12-13 | Thomson Csf Mat Tel | Circuit integre prediffuse, et procede d'interconnexion des cellules de ce circuit |
IT1191188B (it) * | 1982-04-15 | 1988-02-24 | Cselt Centro Studi Lab Telecom | Cella elementare per reti di porte logiche a circuito integrato |
GB2121601B (en) * | 1982-06-01 | 1986-01-29 | Standard Telephones Cables Ltd | Uncommitted logic integrated circuit array |
GB2122417B (en) * | 1982-06-01 | 1985-10-09 | Standard Telephones Cables Ltd | Integrated circuits |
US4511914A (en) * | 1982-07-01 | 1985-04-16 | Motorola, Inc. | Power bus routing for providing noise isolation in gate arrays |
JPS5925260A (ja) * | 1982-08-02 | 1984-02-09 | Fujitsu Ltd | 半導体装置 |
JPS5929440A (ja) * | 1982-08-11 | 1984-02-16 | Hitachi Ltd | 半導体集積回路装置 |
JPS5943548A (ja) * | 1982-09-06 | 1984-03-10 | Hitachi Ltd | 半導体集積回路装置 |
JPS5969948A (ja) * | 1982-10-15 | 1984-04-20 | Fujitsu Ltd | マスタ−スライス型半導体集積回路 |
US4742383A (en) * | 1983-01-12 | 1988-05-03 | International Business Machines Corporation | Multi-function FET masterslice cell |
JPH073863B2 (ja) * | 1983-12-08 | 1995-01-18 | 株式会社東芝 | 半導体集積回路 |
JPS601017U (ja) * | 1984-05-16 | 1985-01-07 | セイコーエプソン株式会社 | 演算増幅器 |
JPS6114734A (ja) * | 1984-06-29 | 1986-01-22 | Fujitsu Ltd | 半導体集積回路装置及びその製造方法 |
JPS6124250A (ja) * | 1984-07-13 | 1986-02-01 | Nippon Gakki Seizo Kk | 半導体集積回路装置 |
EP0323438B1 (de) * | 1984-07-18 | 1994-06-15 | Hughes Aircraft Company | Schaltung und Methode zur Selbstprüfung eines Speichers in einem Gatterfeld mit bidirektionaler Symmetrie |
US4724531A (en) * | 1984-07-18 | 1988-02-09 | Hughes Aircraft Company | Gate array with bidirectional symmetry |
US4652777A (en) * | 1984-12-18 | 1987-03-24 | Cline Ronald L | CMOS programmable logic array |
JPS60242639A (ja) * | 1985-03-25 | 1985-12-02 | Fujitsu Ltd | 半導体集積回路装置 |
JPS60242641A (ja) * | 1985-03-25 | 1985-12-02 | Fujitsu Ltd | 半導体集積回路装置 |
CA1238986A (en) * | 1986-02-06 | 1988-07-05 | Stephen K. Sunter | Integrated circuit chip manufacture |
JPS62216342A (ja) * | 1986-03-18 | 1987-09-22 | Toshiba Corp | 半導体集積回路装置の製造方法 |
US4885485A (en) * | 1988-08-30 | 1989-12-05 | Vtc Incorporated | CMOS Output buffer providing mask programmable output drive current |
JPH0793414B2 (ja) * | 1992-10-19 | 1995-10-09 | 株式会社リコー | Lsiマスタスライスチップ |
EP0649173A3 (de) * | 1993-10-13 | 1995-07-26 | Kawasaki Steel Co | Halbleiterbauelement geeignet für eine "master slice" Behandlung und Herstellungsverfahren. |
JP3256084B2 (ja) * | 1994-05-26 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 半導体集積回路およびその作製方法 |
JP3926011B2 (ja) * | 1997-12-24 | 2007-06-06 | 株式会社ルネサステクノロジ | 半導体装置の設計方法 |
US7592841B2 (en) * | 2006-05-11 | 2009-09-22 | Dsm Solutions, Inc. | Circuit configurations having four terminal JFET devices |
US7646233B2 (en) * | 2006-05-11 | 2010-01-12 | Dsm Solutions, Inc. | Level shifting circuit having junction field effect transistors |
US20080024188A1 (en) * | 2006-07-28 | 2008-01-31 | Chou Richard K | Junction field effect transistor level shifting circuit |
US7525163B2 (en) * | 2006-10-31 | 2009-04-28 | Dsm Solutions, Inc. | Semiconductor device, design method and structure |
US20080099796A1 (en) * | 2006-11-01 | 2008-05-01 | Vora Madhukar B | Device with patterned semiconductor electrode structure and method of manufacture |
US20080265936A1 (en) * | 2007-04-27 | 2008-10-30 | Dsm Solutions, Inc. | Integrated circuit switching device, structure and method of manufacture |
US7710148B2 (en) * | 2008-06-02 | 2010-05-04 | Suvolta, Inc. | Programmable switch circuit and method, method of manufacture, and devices and systems including the same |
US10489548B2 (en) * | 2017-05-26 | 2019-11-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit and method for manufacturing the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3508209A (en) * | 1966-03-31 | 1970-04-21 | Ibm | Monolithic integrated memory array structure including fabrication and package therefor |
DE1789137A1 (de) * | 1967-06-23 | 1973-05-03 | Rca Corp | Aus einheitszellen aufgebaute lsischaltung |
US3641405A (en) * | 1967-10-13 | 1972-02-08 | Gen Electric | Field-effect transistors with superior passivating films and method of making same |
US3558992A (en) * | 1968-06-17 | 1971-01-26 | Rca Corp | Integrated circuit having bonding pads over unused active area components |
US3771217A (en) * | 1971-04-16 | 1973-11-13 | Texas Instruments Inc | Integrated circuit arrays utilizing discretionary wiring and method of fabricating same |
-
1973
- 1973-04-30 GB GB2055073A patent/GB1440512A/en not_active Expired
-
1974
- 1974-04-10 US US05/459,599 patent/US3943551A/en not_active Expired - Lifetime
- 1974-04-24 CA CA198,046A patent/CA993118A/en not_active Expired
- 1974-04-26 IT IT21964/74A patent/IT1012593B/it active
- 1974-04-29 NL NLAANVRAGE7405759,A patent/NL182606C/xx not_active IP Right Cessation
- 1974-04-29 DE DE2420759A patent/DE2420759C2/de not_active Expired
- 1974-04-30 FR FR7415040A patent/FR2227638B1/fr not_active Expired
- 1974-04-30 JP JP4924174A patent/JPS5516453B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1440512A (en) | 1976-06-23 |
DE2420759C2 (de) | 1982-09-02 |
JPS5516453B2 (de) | 1980-05-02 |
NL7405759A (de) | 1974-11-01 |
US3943551A (en) | 1976-03-09 |
FR2227638B1 (de) | 1978-08-11 |
DE2420759A1 (de) | 1974-11-07 |
JPS5028796A (de) | 1975-03-24 |
FR2227638A1 (de) | 1974-11-22 |
IT1012593B (it) | 1977-03-10 |
NL182606B (nl) | 1987-11-02 |
CA993118A (en) | 1976-07-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BA | A request for search or an international-type search has been filed | ||
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |