NL291970A - - Google Patents
Info
- Publication number
- NL291970A NL291970A NL291970DA NL291970A NL 291970 A NL291970 A NL 291970A NL 291970D A NL291970D A NL 291970DA NL 291970 A NL291970 A NL 291970A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/26—Stirring of the molten zone
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/32—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/91—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES32193A DE1061527B (de) | 1953-02-14 | 1953-02-14 | Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken |
DE1953S0036998 DE975158C (de) | 1953-12-30 | 1953-12-30 | Verfahren und Vorrichtung zum tiegelfreien Zonenschmelzen eines langgestreckten stabfoermigen Koerpers |
DES44099A DE1210415B (de) | 1953-02-14 | 1955-05-26 | Verfahren zum tiegellosen Zonenschmelzen eines durch Ziehen aus der Schmelze erhaltenen Halbleiterstabes |
Publications (1)
Publication Number | Publication Date |
---|---|
NL291970A true NL291970A (de) | 1965-07-12 |
Family
ID=27212565
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL291970D NL291970A (de) | 1953-02-14 | 1963-04-25 | |
NL291971A NL127108C (de) | 1953-02-14 | 1963-04-25 | |
NL291972D NL291972A (de) | 1953-02-14 | 1963-04-25 | |
NL291970A NL120780C (de) | 1953-02-14 | 1963-04-25 | |
NL6601448A NL127664C (de) | 1953-02-14 | 1966-02-04 |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL291971A NL127108C (de) | 1953-02-14 | 1963-04-25 | |
NL291972D NL291972A (de) | 1953-02-14 | 1963-04-25 | |
NL291970A NL120780C (de) | 1953-02-14 | 1963-04-25 | |
NL6601448A NL127664C (de) | 1953-02-14 | 1966-02-04 |
Country Status (6)
Country | Link |
---|---|
US (5) | US3086856A (de) |
CH (2) | CH334388A (de) |
DE (2) | DE1061527B (de) |
FR (2) | FR1107076A (de) |
GB (2) | GB775986A (de) |
NL (5) | NL291970A (de) |
Families Citing this family (86)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE561652A (de) * | 1952-08-01 | |||
DE1061527B (de) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken |
DE975158C (de) * | 1953-12-30 | 1961-09-14 | Siemens Ag | Verfahren und Vorrichtung zum tiegelfreien Zonenschmelzen eines langgestreckten stabfoermigen Koerpers |
US3002821A (en) * | 1956-10-22 | 1961-10-03 | Texas Instruments Inc | Means for continuous fabrication of graded junction transistors |
NL104388C (de) * | 1956-11-28 | |||
GB844813A (en) * | 1957-05-01 | 1960-08-17 | Sylvania Electric Prod | Zone melting apparatus |
DE1169683B (de) * | 1957-05-31 | 1964-05-06 | Siemens Ag | Verfahren zum tiegellosen Zonenschmelzen eines Halbleiterstabes |
DE1238448B (de) * | 1957-07-26 | 1967-04-13 | Siemens Ag | Verfahren zum Dotieren eines stabfoermigen Halbleiterkoerpers |
FR1201878A (fr) * | 1957-08-29 | 1960-01-06 | Philips Nv | Procédé de fabrication d'un corps semi-conducteur |
NL234451A (de) * | 1957-12-27 | |||
NL126240C (de) * | 1958-02-19 | |||
BE581195A (de) * | 1958-07-30 | |||
BE581687A (de) * | 1958-08-16 | |||
BE595351A (de) * | 1958-09-20 | 1900-01-01 | ||
NL121446C (de) * | 1958-11-17 | |||
DE1203230B (de) * | 1958-12-12 | 1965-10-21 | Siemens Ag | Verfahren zur Herstellung von ueber ihre gesamte Laenge gleichmaessig dotierten Staeben aus Halbleitermaterial |
DE1164681B (de) * | 1958-12-24 | 1964-03-05 | Siemens Ag | Verfahren zur Herstellung eines gleichmaessig dotierten Stabes aus Halbleitermaterial durch tiegelfreies Zonenschmelzen |
US3119778A (en) * | 1959-01-20 | 1964-01-28 | Clevite Corp | Method and apparatus for crystal growth |
DE1152269B (de) * | 1959-04-28 | 1963-08-01 | Siemens Ag | Einrichtung zum tiegelfreien Zonenschmelzen eines Halbleiterstabes in einer Vakuumkammer |
US3206286A (en) * | 1959-07-23 | 1965-09-14 | Westinghouse Electric Corp | Apparatus for growing crystals |
BE594105A (de) * | 1959-08-17 | |||
NL255530A (de) * | 1959-09-11 | |||
DE1161043B (de) * | 1959-09-15 | 1964-01-09 | Siemens Ag | Verfahren und Vorrichtung zur Verkleinerung des Querschnittes eines Halbleiterstabesdurch tiegelfreies Zonenschmelzen |
NL133150C (de) * | 1959-12-23 | |||
DE1114171B (de) * | 1959-12-31 | 1961-09-28 | Siemens Ag | Halterung fuer stabfoermiges Halbleitermaterial in Vorrichtungen zum tiegelfreien Zonenschmelzen |
US3026188A (en) * | 1960-04-11 | 1962-03-20 | Clevite Corp | Method and apparatus for growing single crystals |
NL264214A (de) * | 1960-05-02 | 1900-01-01 | ||
DE1188555B (de) * | 1960-05-10 | 1965-03-11 | Wacker Chemie Gmbh | Verfahren zur Herstellung hochreiner kristalliner Koerper aus Nitriden, Phosphiden oder Arseniden der III. Hauptgruppe des Periodensystems |
US3241925A (en) * | 1960-08-19 | 1966-03-22 | Union Carbide Corp | Apparatus for growing solid homogeneous compositions |
GB963843A (en) * | 1960-08-22 | 1964-07-15 | Ass Elect Ind | Improvements relating to zone melting by electron beam furnaces |
NL260045A (de) * | 1961-01-13 | |||
US3226248A (en) * | 1962-03-14 | 1965-12-28 | Texaco Experiment Inc | Method of producing refractory monocrystalline boron structures |
BE631173A (de) * | 1962-04-18 | 1900-01-01 | ||
US3226193A (en) * | 1962-06-21 | 1965-12-28 | Union Carbide Corp | Method for growing crystals |
NL301284A (de) * | 1962-12-10 | |||
US3259468A (en) * | 1963-05-02 | 1966-07-05 | Monsanto Co | Slim crystalline rod pullers with centering means |
DE1217926B (de) * | 1963-08-17 | 1966-06-02 | Siemens Ag | Verfahren zum Vermeiden von Streifen in Metall- oder Halbleiterkristallen |
DE1251721B (de) * | 1963-10-28 | 1967-10-12 | Siemens Aktiengesellschaft, Berlin und München München | Verfahren zum Herstellen von Halbleiteiknstallen vorzugsweise Halbleiteremknstallen mit einstellbarer, beispielsweise konstanter Fremdstoffkonzentration |
DE1224273B (de) * | 1964-06-23 | 1966-09-08 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen |
US3231430A (en) * | 1964-12-28 | 1966-01-25 | Titanium Metals Corp | Conditioning ingots |
US3453370A (en) * | 1965-06-11 | 1969-07-01 | Us Air Force | Continuous floating zone refining system |
DE1265708B (de) * | 1965-11-30 | 1968-04-11 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen |
DE1272886B (de) * | 1966-09-24 | 1968-07-18 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
US3515836A (en) * | 1968-06-24 | 1970-06-02 | Business Assets Corp | Elevator means for a heat scanner device |
FR1598493A (de) * | 1968-12-18 | 1970-07-06 | ||
US3661599A (en) * | 1969-03-25 | 1972-05-09 | Martin Marietta Corp | HIGH TEMPERATURE TiC-VC STRUCTURAL MATERIALS |
US3935059A (en) * | 1969-07-21 | 1976-01-27 | U.S. Philips Corporation | Method of producing single crystals of semiconductor material by floating-zone melting |
US3620682A (en) * | 1969-10-31 | 1971-11-16 | Siemens Ag | Apparatus for producing rod-shaped members of crystalline material |
US4072556A (en) * | 1969-11-29 | 1978-02-07 | Siemens Aktiengesellschaft | Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same |
US3925108A (en) * | 1970-11-25 | 1975-12-09 | Gen Electric | Method for preparing decomposable materials with controlled resistivity |
US3943324A (en) * | 1970-12-14 | 1976-03-09 | Arthur D. Little, Inc. | Apparatus for forming refractory tubing |
US4197157A (en) * | 1975-03-19 | 1980-04-08 | Arthur D. Little, Inc. | Method for forming refractory tubing |
US3939035A (en) * | 1971-03-31 | 1976-02-17 | Siemens Aktiengesellschaft | Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density |
DE2127968A1 (de) * | 1971-05-10 | 1972-11-16 | Aktiengesellschaft Brown, Boveri & Cie, Baden (Schweiz) | Verfahren und Einrichtung zur Beeinflussung der kristallinen Struktur von Legierungen sowie Anwendung dieses Verfahrens |
CA957180A (en) * | 1971-06-16 | 1974-11-05 | Massachusetts, Institute Of Technology | Alloy compositions containing non-dendritic solids and process for preparing and casting same |
DE2143112A1 (de) * | 1971-08-27 | 1973-03-01 | Siemens Ag | Verfahren zur erzielung eines gleichmaessigen radialen widerstandsverlaufs beim herstellen eines halbleiter-einkristallstabes durch tiegelfreies zonenschmelzen |
US4157373A (en) * | 1972-04-26 | 1979-06-05 | Rca Corporation | Apparatus for the production of ribbon shaped crystals |
DE2319700C3 (de) * | 1973-04-18 | 1980-11-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Beeinflussung des radialen Widerstandsverlaufs in einem Halbleitereinkristallstab beim tiegellosen Zonenschmelzen und Vorrichtungen zur Durchführung des Verfahrens |
US3988197A (en) * | 1973-11-22 | 1976-10-26 | Siemens Aktiengesellschaft | Crucible-free zone melting of semiconductor crystal rods including oscillation dampening |
US3996011A (en) * | 1973-11-22 | 1976-12-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
USRE29825E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
US3936346A (en) * | 1973-12-26 | 1976-02-03 | Texas Instruments Incorporated | Crystal growth combining float zone technique with the water cooled RF container method |
BE811057A (fr) * | 1974-02-15 | 1974-08-16 | Elphiac Sa | Machine universelle pour l'elaboration de monocristaux de materiaux semiconducteurs ou autres suivant les methodes classiques. |
US4125425A (en) * | 1974-03-01 | 1978-11-14 | U.S. Philips Corporation | Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element |
US4167554A (en) * | 1974-10-16 | 1979-09-11 | Metals Research Limited | Crystallization apparatus having floating die member with tapered aperture |
US4186173A (en) * | 1975-04-11 | 1980-01-29 | Leybold-Heraeus Gmbh & Co. Kg | Apparatus for producing monocrystals |
US4078897A (en) * | 1975-04-11 | 1978-03-14 | Leybold-Heraeus Gmbh & Co. Kg | Apparatus for producing monocrystals |
US4650540A (en) * | 1975-07-09 | 1987-03-17 | Milton Stoll | Methods and apparatus for producing coherent or monolithic elements |
JPS604599B2 (ja) * | 1976-03-17 | 1985-02-05 | 株式会社東芝 | タンタル酸リチウム単結晶の製造方法 |
DE2640377A1 (de) * | 1976-09-08 | 1978-03-09 | Leybold Heraeus Gmbh & Co Kg | Vorrichtung zum zonenziehen von einkristallstaeben |
JPS53135037A (en) * | 1977-04-28 | 1978-11-25 | Nichiden Kikai Kk | Heating apparatus |
US4218282A (en) * | 1977-06-17 | 1980-08-19 | Kabushiki Kaisha Suwa Seikosha | Method of preparation of chrysoberyl and beryl single crystals |
DK371977A (da) * | 1977-08-22 | 1979-02-23 | Topsil As | Fremgangsmaade og apparat til raffinering af halvledermateriale |
US4257841A (en) * | 1978-01-06 | 1981-03-24 | Monsanto Company | Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod |
US4317799A (en) * | 1979-03-12 | 1982-03-02 | Mobil Tyco Solar Energy Corporation | Belt-roller crystal pulling mechanism |
FR2455921A2 (en) * | 1979-05-08 | 1980-12-05 | Anvar | Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps |
US4565600A (en) * | 1981-04-27 | 1986-01-21 | Criceram | Processes for the continuous preparation of single crystals |
US4615760A (en) * | 1983-01-12 | 1986-10-07 | Dressler Robert F | Suppression or control of liquid convection in float zones in a zero-gravity environment by viscous gas shear |
EP0221051A1 (de) * | 1985-04-16 | 1987-05-13 | Energy Materials Corporation | Verfahren und vorrichtung zum wachsen von monokristallen |
JPS6259594A (ja) * | 1985-09-11 | 1987-03-16 | Sumitomo Electric Ind Ltd | 結晶の引上げ方法 |
US4609402A (en) * | 1985-10-28 | 1986-09-02 | Iowa State University Research Foundation, Inc. | Method of forming magnetostrictive rods from rare earth-iron alloys |
US4828608A (en) * | 1987-05-14 | 1989-05-09 | Indium Corporation Of America | Process for ultrapurification of indium |
JPH078495B2 (ja) * | 1990-11-29 | 1995-02-01 | 信越半導体株式会社 | 単結晶引上装置の単結晶絞り部自動切断装置 |
EP0504929B1 (de) * | 1991-03-22 | 1996-08-28 | Shin-Etsu Handotai Company Limited | Verfahren zum Züchten eines einkristallinen Siliziumstabes |
JP3237564B2 (ja) * | 1997-03-12 | 2001-12-10 | 株式会社村田製作所 | 単結晶育成方法 |
FR2834654B1 (fr) * | 2002-01-16 | 2004-11-05 | Michel Bruel | Procede de traitement d'une piece en vue de modifier au moins une de ses proprietes |
Family Cites Families (22)
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---|---|---|---|---|
US2631356A (en) * | 1953-03-17 | Method of making p-n junctions | ||
DE42294C (de) * | HEES 8c WILBERG in Magdeburg, Kronprinzenstr, 1 | Blockbewegung an Fleischwiegemaschinen | ||
US2254306A (en) * | 1939-03-18 | 1941-09-02 | Nat Cylinder Gas Co | Apparatus for flame hardening |
US2419373A (en) * | 1943-09-10 | 1947-04-22 | Metals & Controls Corp | Apparatus for vibrating metals during casting |
US2623253A (en) * | 1948-10-27 | 1952-12-30 | Nat Lead Co | Rod casting device |
DE804840C (de) * | 1948-10-28 | 1951-04-30 | Ernst Teschner Dipl Ing | Verfahren zum ununterbrochenen Giessen von Hohlstraengen |
US2553921A (en) * | 1949-04-12 | 1951-05-22 | Jordan James Fernando | Continuous casting apparatus |
BE500569A (de) * | 1950-01-13 | |||
US2686864A (en) * | 1951-01-17 | 1954-08-17 | Westinghouse Electric Corp | Magnetic levitation and heating of conductive materials |
US2768914A (en) * | 1951-06-29 | 1956-10-30 | Bell Telephone Labor Inc | Process for producing semiconductive crystals of uniform resistivity |
US2686865A (en) * | 1951-10-20 | 1954-08-17 | Westinghouse Electric Corp | Stabilizing molten material during magnetic levitation and heating thereof |
NL168491B (de) * | 1951-11-16 | Roussel-Uclaf, Societe Anonyme Te Parijs. | ||
US2770022A (en) * | 1952-12-08 | 1956-11-13 | Joseph B Brennan | Method of continuously casting molten metal |
US3060123A (en) * | 1952-12-17 | 1962-10-23 | Bell Telephone Labor Inc | Method of processing semiconductive materials |
BE525102A (de) * | 1952-12-17 | 1900-01-01 | ||
DE1061527B (de) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken |
US2972525A (en) * | 1953-02-26 | 1961-02-21 | Siemens Ag | Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance |
AT194444B (de) * | 1953-02-26 | 1958-01-10 | Siemens Ag | Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung |
DE1017795B (de) * | 1954-05-25 | 1957-10-17 | Siemens Ag | Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen |
US2743200A (en) * | 1954-05-27 | 1956-04-24 | Bell Telephone Labor Inc | Method of forming junctions in silicon |
US2809905A (en) * | 1955-12-20 | 1957-10-15 | Nat Res Dev | Melting and refining metals |
DE1076623B (de) * | 1957-11-15 | 1960-03-03 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenziehen von stabfoermigem Halbleitermaterial |
-
1953
- 1953-02-14 DE DES32193A patent/DE1061527B/de active Pending
-
1954
- 1954-01-28 CH CH334388D patent/CH334388A/de unknown
- 1954-02-10 US US409420A patent/US3086856A/en not_active Expired - Lifetime
- 1954-02-11 US US409610A patent/US3030194A/en not_active Expired - Lifetime
- 1954-02-13 FR FR1107076D patent/FR1107076A/fr not_active Expired
- 1954-02-15 GB GB4447/54A patent/GB775986A/en not_active Expired
-
1955
- 1955-05-26 DE DES44099A patent/DE1210415B/de active Pending
-
1956
- 1956-04-24 CH CH348262D patent/CH348262A/de unknown
- 1956-05-21 US US586125A patent/US2876147A/en not_active Expired - Lifetime
- 1956-05-25 FR FR69746D patent/FR69746E/fr not_active Expired
- 1956-05-25 GB GB16312/56A patent/GB809163A/en not_active Expired
-
1960
- 1960-03-07 US US13309A patent/US3234012A/en not_active Expired - Lifetime
-
1961
- 1961-10-26 US US147799A patent/US3216805A/en not_active Expired - Lifetime
-
1963
- 1963-04-25 NL NL291970D patent/NL291970A/xx unknown
- 1963-04-25 NL NL291971A patent/NL127108C/xx active
- 1963-04-25 NL NL291972D patent/NL291972A/xx unknown
- 1963-04-25 NL NL291970A patent/NL120780C/xx active
-
1966
- 1966-02-04 NL NL6601448A patent/NL127664C/xx active
Also Published As
Publication number | Publication date |
---|---|
NL6601448A (de) | 1966-05-25 |
GB809163A (en) | 1959-02-18 |
US3234012A (en) | 1966-02-08 |
FR69746E (fr) | 1958-11-19 |
CH348262A (de) | 1960-08-15 |
NL127108C (de) | 1969-09-15 |
NL120780C (de) | 1966-05-16 |
US3216805A (en) | 1965-11-09 |
NL127664C (de) | 1969-12-15 |
DE1210415B (de) | 1966-02-10 |
US3086856A (en) | 1963-04-23 |
NL291972A (de) | 1965-07-12 |
GB775986A (en) | 1957-05-29 |
US2876147A (en) | 1959-03-03 |
DE1061527B (de) | 1959-07-16 |
US3030194A (en) | 1962-04-17 |
CH334388A (de) | 1958-11-30 |
FR1107076A (fr) | 1955-12-28 |