FR1107076A - Procédé et dispositif pour le traitement d'un montage à cristal semi-conducteur - Google Patents

Procédé et dispositif pour le traitement d'un montage à cristal semi-conducteur

Info

Publication number
FR1107076A
FR1107076A FR1107076DA FR1107076A FR 1107076 A FR1107076 A FR 1107076A FR 1107076D A FR1107076D A FR 1107076DA FR 1107076 A FR1107076 A FR 1107076A
Authority
FR
France
Prior art keywords
processing
semiconductor crystal
crystal assembly
assembly
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE1953S0036998 external-priority patent/DE975158C/de
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR1107076A publication Critical patent/FR1107076A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/26—Stirring of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
FR1107076D 1953-02-14 1954-02-13 Procédé et dispositif pour le traitement d'un montage à cristal semi-conducteur Expired FR1107076A (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES32193A DE1061527B (de) 1953-02-14 1953-02-14 Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
DE1953S0036998 DE975158C (de) 1953-12-30 1953-12-30 Verfahren und Vorrichtung zum tiegelfreien Zonenschmelzen eines langgestreckten stabfoermigen Koerpers
DES44099A DE1210415B (de) 1953-02-14 1955-05-26 Verfahren zum tiegellosen Zonenschmelzen eines durch Ziehen aus der Schmelze erhaltenen Halbleiterstabes

Publications (1)

Publication Number Publication Date
FR1107076A true FR1107076A (fr) 1955-12-28

Family

ID=27212565

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1107076D Expired FR1107076A (fr) 1953-02-14 1954-02-13 Procédé et dispositif pour le traitement d'un montage à cristal semi-conducteur
FR69746D Expired FR69746E (fr) 1953-02-14 1956-05-25 Procédé et dispositif pour le traitement d'un montage à cristal semi-conducteur

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR69746D Expired FR69746E (fr) 1953-02-14 1956-05-25 Procédé et dispositif pour le traitement d'un montage à cristal semi-conducteur

Country Status (6)

Country Link
US (5) US3086856A (fr)
CH (2) CH334388A (fr)
DE (2) DE1061527B (fr)
FR (2) FR1107076A (fr)
GB (2) GB775986A (fr)
NL (5) NL127108C (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2914397A (en) * 1952-08-01 1959-11-24 Int Standard Electric Corp Refining processes for semiconductor materials
DE1121223B (de) * 1957-08-29 1962-01-04 Philips Nv Verfahren zur Herstellung von halbleitenden Koerpern fuer Halbleiteranordnungen
DE1152269B (de) * 1959-04-28 1963-08-01 Siemens Ag Einrichtung zum tiegelfreien Zonenschmelzen eines Halbleiterstabes in einer Vakuumkammer
DE1161043B (de) * 1959-09-15 1964-01-09 Siemens Ag Verfahren und Vorrichtung zur Verkleinerung des Querschnittes eines Halbleiterstabesdurch tiegelfreies Zonenschmelzen
DE1164681B (de) * 1958-12-24 1964-03-05 Siemens Ag Verfahren zur Herstellung eines gleichmaessig dotierten Stabes aus Halbleitermaterial durch tiegelfreies Zonenschmelzen
DE1169683B (de) * 1957-05-31 1964-05-06 Siemens Ag Verfahren zum tiegellosen Zonenschmelzen eines Halbleiterstabes
DE1203230B (de) * 1958-12-12 1965-10-21 Siemens Ag Verfahren zur Herstellung von ueber ihre gesamte Laenge gleichmaessig dotierten Staeben aus Halbleitermaterial
DE1207920B (de) * 1957-12-27 1965-12-30 Gen Electric Verfahren zum Herstellen sauerstofffreier, verwerfungsfreier Halbleitereinkristalle durch Ziehen aus einer tiegellosen Schmelze
DE1238448B (de) * 1957-07-26 1967-04-13 Siemens Ag Verfahren zum Dotieren eines stabfoermigen Halbleiterkoerpers
DE1278413B (de) * 1959-09-11 1968-09-26 Siemens Ag Verfahren zum Ziehen duenner stabfoermiger Halbleiterkristalle aus einer Halbleiterschmelze

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
DE975158C (de) * 1953-12-30 1961-09-14 Siemens Ag Verfahren und Vorrichtung zum tiegelfreien Zonenschmelzen eines langgestreckten stabfoermigen Koerpers
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
NL104388C (fr) * 1956-11-28
GB844813A (en) * 1957-05-01 1960-08-17 Sylvania Electric Prod Zone melting apparatus
NL235481A (fr) * 1958-02-19
NL240421A (fr) * 1958-07-30
NL240020A (fr) * 1958-08-16
DE1719025A1 (fr) * 1958-09-20 1900-01-01
NL244873A (fr) * 1958-11-17
US3119778A (en) * 1959-01-20 1964-01-28 Clevite Corp Method and apparatus for crystal growth
US3206286A (en) * 1959-07-23 1965-09-14 Westinghouse Electric Corp Apparatus for growing crystals
NL252591A (fr) * 1959-08-17
NL258961A (fr) * 1959-12-23
DE1114171B (de) * 1959-12-31 1961-09-28 Siemens Ag Halterung fuer stabfoermiges Halbleitermaterial in Vorrichtungen zum tiegelfreien Zonenschmelzen
US3026188A (en) * 1960-04-11 1962-03-20 Clevite Corp Method and apparatus for growing single crystals
NL264214A (fr) * 1960-05-02 1900-01-01
DE1188555B (de) * 1960-05-10 1965-03-11 Wacker Chemie Gmbh Verfahren zur Herstellung hochreiner kristalliner Koerper aus Nitriden, Phosphiden oder Arseniden der III. Hauptgruppe des Periodensystems
US3241925A (en) * 1960-08-19 1966-03-22 Union Carbide Corp Apparatus for growing solid homogeneous compositions
GB963843A (en) * 1960-08-22 1964-07-15 Ass Elect Ind Improvements relating to zone melting by electron beam furnaces
DE1303150B (fr) * 1961-01-13 1971-05-13 Philips Nv
US3226248A (en) * 1962-03-14 1965-12-28 Texaco Experiment Inc Method of producing refractory monocrystalline boron structures
DE1251272B (de) * 1962-04-18 1967-10-05 N. V. Philips' Gloeilampenrabrieken, Eindhoven (Niederlande) Verfahren und Vorrichtung zum Herstellen eines Stabes durch Aufziehen aus einer Schmelze
US3226193A (en) * 1962-06-21 1965-12-28 Union Carbide Corp Method for growing crystals
NL301284A (fr) * 1962-12-10
US3259468A (en) * 1963-05-02 1966-07-05 Monsanto Co Slim crystalline rod pullers with centering means
DE1217926B (de) * 1963-08-17 1966-06-02 Siemens Ag Verfahren zum Vermeiden von Streifen in Metall- oder Halbleiterkristallen
DE1251721B (de) * 1963-10-28 1967-10-12 Siemens Aktiengesellschaft, Berlin und München München Verfahren zum Herstellen von Halbleiteiknstallen vorzugsweise Halbleiteremknstallen mit einstellbarer, beispielsweise konstanter Fremdstoffkonzentration
DE1224273B (de) * 1964-06-23 1966-09-08 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
US3231430A (en) * 1964-12-28 1966-01-25 Titanium Metals Corp Conditioning ingots
US3453370A (en) * 1965-06-11 1969-07-01 Us Air Force Continuous floating zone refining system
DE1265708B (de) * 1965-11-30 1968-04-11 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
DE1272886B (de) * 1966-09-24 1968-07-18 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
US3515836A (en) * 1968-06-24 1970-06-02 Business Assets Corp Elevator means for a heat scanner device
FR1598493A (fr) * 1968-12-18 1970-07-06
US3661599A (en) * 1969-03-25 1972-05-09 Martin Marietta Corp HIGH TEMPERATURE TiC-VC STRUCTURAL MATERIALS
US3935059A (en) * 1969-07-21 1976-01-27 U.S. Philips Corporation Method of producing single crystals of semiconductor material by floating-zone melting
US3620682A (en) * 1969-10-31 1971-11-16 Siemens Ag Apparatus for producing rod-shaped members of crystalline material
US4072556A (en) * 1969-11-29 1978-02-07 Siemens Aktiengesellschaft Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same
US3925108A (en) * 1970-11-25 1975-12-09 Gen Electric Method for preparing decomposable materials with controlled resistivity
US3943324A (en) * 1970-12-14 1976-03-09 Arthur D. Little, Inc. Apparatus for forming refractory tubing
US4197157A (en) * 1975-03-19 1980-04-08 Arthur D. Little, Inc. Method for forming refractory tubing
US3939035A (en) * 1971-03-31 1976-02-17 Siemens Aktiengesellschaft Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density
DE2127968A1 (de) * 1971-05-10 1972-11-16 Aktiengesellschaft Brown, Boveri & Cie, Baden (Schweiz) Verfahren und Einrichtung zur Beeinflussung der kristallinen Struktur von Legierungen sowie Anwendung dieses Verfahrens
CA957180A (en) * 1971-06-16 1974-11-05 Massachusetts, Institute Of Technology Alloy compositions containing non-dendritic solids and process for preparing and casting same
DE2143112A1 (de) * 1971-08-27 1973-03-01 Siemens Ag Verfahren zur erzielung eines gleichmaessigen radialen widerstandsverlaufs beim herstellen eines halbleiter-einkristallstabes durch tiegelfreies zonenschmelzen
US4157373A (en) * 1972-04-26 1979-06-05 Rca Corporation Apparatus for the production of ribbon shaped crystals
DE2319700C3 (de) * 1973-04-18 1980-11-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Beeinflussung des radialen Widerstandsverlaufs in einem Halbleitereinkristallstab beim tiegellosen Zonenschmelzen und Vorrichtungen zur Durchführung des Verfahrens
US3996011A (en) * 1973-11-22 1976-12-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
USRE29825E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3988197A (en) * 1973-11-22 1976-10-26 Siemens Aktiengesellschaft Crucible-free zone melting of semiconductor crystal rods including oscillation dampening
US3936346A (en) * 1973-12-26 1976-02-03 Texas Instruments Incorporated Crystal growth combining float zone technique with the water cooled RF container method
BE811057A (fr) * 1974-02-15 1974-08-16 Elphiac Sa Machine universelle pour l'elaboration de monocristaux de materiaux semiconducteurs ou autres suivant les methodes classiques.
US4125425A (en) * 1974-03-01 1978-11-14 U.S. Philips Corporation Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
US4186173A (en) * 1975-04-11 1980-01-29 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
US4078897A (en) * 1975-04-11 1978-03-14 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
US4650540A (en) * 1975-07-09 1987-03-17 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
JPS604599B2 (ja) * 1976-03-17 1985-02-05 株式会社東芝 タンタル酸リチウム単結晶の製造方法
DE2640377A1 (de) * 1976-09-08 1978-03-09 Leybold Heraeus Gmbh & Co Kg Vorrichtung zum zonenziehen von einkristallstaeben
JPS53135037A (en) * 1977-04-28 1978-11-25 Nichiden Kikai Kk Heating apparatus
US4218282A (en) * 1977-06-17 1980-08-19 Kabushiki Kaisha Suwa Seikosha Method of preparation of chrysoberyl and beryl single crystals
DK371977A (da) * 1977-08-22 1979-02-23 Topsil As Fremgangsmaade og apparat til raffinering af halvledermateriale
US4257841A (en) * 1978-01-06 1981-03-24 Monsanto Company Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod
US4317799A (en) * 1979-03-12 1982-03-02 Mobil Tyco Solar Energy Corporation Belt-roller crystal pulling mechanism
FR2455921A2 (en) * 1979-05-08 1980-12-05 Anvar Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps
US4565600A (en) * 1981-04-27 1986-01-21 Criceram Processes for the continuous preparation of single crystals
US4615760A (en) * 1983-01-12 1986-10-07 Dressler Robert F Suppression or control of liquid convection in float zones in a zero-gravity environment by viscous gas shear
EP0221051A1 (fr) * 1985-04-16 1987-05-13 Energy Materials Corporation Procede et appareil pour la croissance de monocristaux
JPS6259594A (ja) * 1985-09-11 1987-03-16 Sumitomo Electric Ind Ltd 結晶の引上げ方法
US4609402A (en) * 1985-10-28 1986-09-02 Iowa State University Research Foundation, Inc. Method of forming magnetostrictive rods from rare earth-iron alloys
US4828608A (en) * 1987-05-14 1989-05-09 Indium Corporation Of America Process for ultrapurification of indium
JPH078495B2 (ja) * 1990-11-29 1995-02-01 信越半導体株式会社 単結晶引上装置の単結晶絞り部自動切断装置
DE69213059T2 (de) * 1991-03-22 1997-04-10 Shinetsu Handotai Kk Verfahren zum Züchten eines einkristallinen Siliziumstabes
JP3237564B2 (ja) * 1997-03-12 2001-12-10 株式会社村田製作所 単結晶育成方法
FR2834654B1 (fr) * 2002-01-16 2004-11-05 Michel Bruel Procede de traitement d'une piece en vue de modifier au moins une de ses proprietes

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE42294C (de) * HEES 8c WILBERG in Magdeburg, Kronprinzenstr, 1 Blockbewegung an Fleischwiegemaschinen
US2631356A (en) * 1953-03-17 Method of making p-n junctions
US2254306A (en) * 1939-03-18 1941-09-02 Nat Cylinder Gas Co Apparatus for flame hardening
US2419373A (en) * 1943-09-10 1947-04-22 Metals & Controls Corp Apparatus for vibrating metals during casting
US2623253A (en) * 1948-10-27 1952-12-30 Nat Lead Co Rod casting device
DE804840C (de) * 1948-10-28 1951-04-30 Ernst Teschner Dipl Ing Verfahren zum ununterbrochenen Giessen von Hohlstraengen
US2553921A (en) * 1949-04-12 1951-05-22 Jordan James Fernando Continuous casting apparatus
BE500569A (fr) * 1950-01-13
US2686864A (en) * 1951-01-17 1954-08-17 Westinghouse Electric Corp Magnetic levitation and heating of conductive materials
US2768914A (en) * 1951-06-29 1956-10-30 Bell Telephone Labor Inc Process for producing semiconductive crystals of uniform resistivity
US2686865A (en) * 1951-10-20 1954-08-17 Westinghouse Electric Corp Stabilizing molten material during magnetic levitation and heating thereof
BE510303A (fr) * 1951-11-16
US2770022A (en) * 1952-12-08 1956-11-13 Joseph B Brennan Method of continuously casting molten metal
NL89230C (fr) * 1952-12-17 1900-01-01
US3060123A (en) * 1952-12-17 1962-10-23 Bell Telephone Labor Inc Method of processing semiconductive materials
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
AT194444B (de) * 1953-02-26 1958-01-10 Siemens Ag Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
US2809905A (en) * 1955-12-20 1957-10-15 Nat Res Dev Melting and refining metals
DE1076623B (de) * 1957-11-15 1960-03-03 Siemens Ag Vorrichtung zum tiegelfreien Zonenziehen von stabfoermigem Halbleitermaterial

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2914397A (en) * 1952-08-01 1959-11-24 Int Standard Electric Corp Refining processes for semiconductor materials
DE1169683B (de) * 1957-05-31 1964-05-06 Siemens Ag Verfahren zum tiegellosen Zonenschmelzen eines Halbleiterstabes
DE1238448B (de) * 1957-07-26 1967-04-13 Siemens Ag Verfahren zum Dotieren eines stabfoermigen Halbleiterkoerpers
DE1121223B (de) * 1957-08-29 1962-01-04 Philips Nv Verfahren zur Herstellung von halbleitenden Koerpern fuer Halbleiteranordnungen
DE1207920B (de) * 1957-12-27 1965-12-30 Gen Electric Verfahren zum Herstellen sauerstofffreier, verwerfungsfreier Halbleitereinkristalle durch Ziehen aus einer tiegellosen Schmelze
DE1203230B (de) * 1958-12-12 1965-10-21 Siemens Ag Verfahren zur Herstellung von ueber ihre gesamte Laenge gleichmaessig dotierten Staeben aus Halbleitermaterial
DE1164681B (de) * 1958-12-24 1964-03-05 Siemens Ag Verfahren zur Herstellung eines gleichmaessig dotierten Stabes aus Halbleitermaterial durch tiegelfreies Zonenschmelzen
DE1152269B (de) * 1959-04-28 1963-08-01 Siemens Ag Einrichtung zum tiegelfreien Zonenschmelzen eines Halbleiterstabes in einer Vakuumkammer
DE1278413B (de) * 1959-09-11 1968-09-26 Siemens Ag Verfahren zum Ziehen duenner stabfoermiger Halbleiterkristalle aus einer Halbleiterschmelze
DE1161043B (de) * 1959-09-15 1964-01-09 Siemens Ag Verfahren und Vorrichtung zur Verkleinerung des Querschnittes eines Halbleiterstabesdurch tiegelfreies Zonenschmelzen

Also Published As

Publication number Publication date
NL291972A (fr) 1965-07-12
NL291970A (fr) 1965-07-12
GB775986A (en) 1957-05-29
DE1210415B (de) 1966-02-10
GB809163A (en) 1959-02-18
US3086856A (en) 1963-04-23
NL127664C (fr) 1969-12-15
FR69746E (fr) 1958-11-19
NL6601448A (fr) 1966-05-25
US3030194A (en) 1962-04-17
US2876147A (en) 1959-03-03
CH348262A (de) 1960-08-15
CH334388A (de) 1958-11-30
DE1061527B (de) 1959-07-16
US3234012A (en) 1966-02-08
NL120780C (fr) 1966-05-16
US3216805A (en) 1965-11-09
NL127108C (fr) 1969-09-15

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