GB775986A - Improvements in or relating to processes and apparatus for treating semi-conductor devices - Google Patents

Improvements in or relating to processes and apparatus for treating semi-conductor devices

Info

Publication number
GB775986A
GB775986A GB4447/54A GB444754A GB775986A GB 775986 A GB775986 A GB 775986A GB 4447/54 A GB4447/54 A GB 4447/54A GB 444754 A GB444754 A GB 444754A GB 775986 A GB775986 A GB 775986A
Authority
GB
United Kingdom
Prior art keywords
zone
molten
rotated
rod
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4447/54A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE1953S0036998 external-priority patent/DE975158C/en
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB775986A publication Critical patent/GB775986A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/26—Stirring of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)

Abstract

<PICT:0775986/III/1> A longitudinally extending semi-conducting device or assembly of silicon is treated by a zone-melting operation, the material being liquified only in a limited zone which moves along the materal and the molten material in the zone is supported otherwise than by means of a supporting crucible or the like. Support for the molten material may be provided by an electrical field counteracting the effect of gravity on the molten material, by a ring of nozzles which blow a protective gas on to the molten zone from below to prevent the molten material from dropping or, where the device is positioned at an inclination or horizontally, by arranging that the molten zone is confined to the upper part only, the lower part being maintained solid, e.g. by blowing a cool protective gas against the lower part. In the latter method the device is rotated about its axis so that the molten zone pursues a spiral path along the device. The ends of the device may be fastened in supports which can be oscillated or rotated. Where the supports are rotated the speed of rotation is arranged to be above or below the molten zone and may be so high that undissolved foreign substances are conveyed by centrifugal action to the outer surface from which they are later removed. Alternatively the supports may be rotated in opposite directions. Material may be added to the molten zone e.g. donors and acceptors, at suitable points along the device or they may be introduced as constituents, at appropriate points along a sintered body to be treated. The ends of the device may be moved towards or away from each other during treatment to modify the cross-section of the device. The heating means may comprise one or more incandescent rings arranged symmetrically with respect to the axis of the device and optical means such as a concave mirror may be used to concentrate the heat on one or more narrow surface zones of the device. Preheating, e.g. capacitative, resistance or radiation, may be employed. As shown in the Figure the upper end 111 of a rod being treated is clamped in a holder 199 and can be rotated by means of an electric motor, situated below the base plate 115, operating through a gear 167. The lower end of the rod is also rotatably mounted in a holder 114. The upper end of the rod can be moved longitudinally with respect to the lower end by arm 129 of an internally threaded support 118 which is moved by rotation of a threaded rod 116. The heating means consists of a tungsten plate 122 bent to form a ring and similarly mounted to be moved in a vertical direction by rotation of a threaded rod 117. Guide means 121 and 124 for the lower and upper parts respectively of the device are provided. Current is supplied to the heating ring by flexible cables attached to terminals on the base plate and to terminals on the support for the heater ring. The apparatus, except for the driving motors, is mounted within a cover 131 clamped in an air-tight manner to the base plate, the cover being surrounded by a cooling coil 132.
GB4447/54A 1953-02-14 1954-02-15 Improvements in or relating to processes and apparatus for treating semi-conductor devices Expired GB775986A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES32193A DE1061527B (en) 1953-02-14 1953-02-14 Process for zone-wise remelting of rods and other elongated workpieces
DE1953S0036998 DE975158C (en) 1953-12-30 1953-12-30 Method and device for crucible-free zone melting of an elongated rod-shaped body
DES44099A DE1210415B (en) 1953-02-14 1955-05-26 Process for crucible-free zone melting of a semiconductor rod obtained by drawing from the melt

Publications (1)

Publication Number Publication Date
GB775986A true GB775986A (en) 1957-05-29

Family

ID=27212565

Family Applications (2)

Application Number Title Priority Date Filing Date
GB4447/54A Expired GB775986A (en) 1953-02-14 1954-02-15 Improvements in or relating to processes and apparatus for treating semi-conductor devices
GB16312/56A Expired GB809163A (en) 1953-02-14 1956-05-25 Improvements in or relating to zone-melting processes and apparatus for carrying outsuch processes

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB16312/56A Expired GB809163A (en) 1953-02-14 1956-05-25 Improvements in or relating to zone-melting processes and apparatus for carrying outsuch processes

Country Status (6)

Country Link
US (5) US3086856A (en)
CH (2) CH334388A (en)
DE (2) DE1061527B (en)
FR (2) FR1107076A (en)
GB (2) GB775986A (en)
NL (5) NL127108C (en)

Cited By (3)

* Cited by examiner, † Cited by third party
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DE1106732B (en) * 1957-05-01 1961-05-18 Sylvania Electric Prod Process for zone cleaning of polycrystalline fusible semiconductors
US3159459A (en) * 1958-02-19 1964-12-01 Siemens Ag Method for producing semiconductor crystals
US4197157A (en) * 1975-03-19 1980-04-08 Arthur D. Little, Inc. Method for forming refractory tubing

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DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
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US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
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US2770022A (en) * 1952-12-08 1956-11-13 Joseph B Brennan Method of continuously casting molten metal
NL89230C (en) * 1952-12-17 1900-01-01
US3060123A (en) * 1952-12-17 1962-10-23 Bell Telephone Labor Inc Method of processing semiconductive materials
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
DE1017795B (en) * 1954-05-25 1957-10-17 Siemens Ag Process for the production of the purest crystalline substances, preferably semiconductor substances
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
US2809905A (en) * 1955-12-20 1957-10-15 Nat Res Dev Melting and refining metals
DE1076623B (en) * 1957-11-15 1960-03-03 Siemens Ag Device for crucible-free zone drawing of rod-shaped semiconductor material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1106732B (en) * 1957-05-01 1961-05-18 Sylvania Electric Prod Process for zone cleaning of polycrystalline fusible semiconductors
US3159459A (en) * 1958-02-19 1964-12-01 Siemens Ag Method for producing semiconductor crystals
US4197157A (en) * 1975-03-19 1980-04-08 Arthur D. Little, Inc. Method for forming refractory tubing

Also Published As

Publication number Publication date
US3234012A (en) 1966-02-08
US3086856A (en) 1963-04-23
NL6601448A (en) 1966-05-25
US2876147A (en) 1959-03-03
FR1107076A (en) 1955-12-28
CH334388A (en) 1958-11-30
NL127108C (en) 1969-09-15
NL291970A (en) 1965-07-12
CH348262A (en) 1960-08-15
NL127664C (en) 1969-12-15
NL291972A (en) 1965-07-12
DE1061527B (en) 1959-07-16
FR69746E (en) 1958-11-19
US3216805A (en) 1965-11-09
NL120780C (en) 1966-05-16
DE1210415B (en) 1966-02-10
GB809163A (en) 1959-02-18
US3030194A (en) 1962-04-17

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