FR69746E - Method and device for processing a semiconductor crystal assembly - Google Patents

Method and device for processing a semiconductor crystal assembly

Info

Publication number
FR69746E
FR69746E FR69746DA FR69746E FR 69746 E FR69746 E FR 69746E FR 69746D A FR69746D A FR 69746DA FR 69746 E FR69746 E FR 69746E
Authority
FR
France
Prior art keywords
processing
semiconductor crystal
crystal assembly
assembly
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE1953S0036998 external-priority patent/DE975158C/en
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR69746E publication Critical patent/FR69746E/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/26—Stirring of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
FR69746D 1953-02-14 1956-05-25 Method and device for processing a semiconductor crystal assembly Expired FR69746E (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES32193A DE1061527B (en) 1953-02-14 1953-02-14 Process for zone-wise remelting of rods and other elongated workpieces
DE1953S0036998 DE975158C (en) 1953-12-30 1953-12-30 Method and device for crucible-free zone melting of an elongated rod-shaped body
DES44099A DE1210415B (en) 1953-02-14 1955-05-26 Process for crucible-free zone melting of a semiconductor rod obtained by drawing from the melt

Publications (1)

Publication Number Publication Date
FR69746E true FR69746E (en) 1958-11-19

Family

ID=27212565

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1107076D Expired FR1107076A (en) 1953-02-14 1954-02-13 Method and device for processing a semiconductor crystal assembly
FR69746D Expired FR69746E (en) 1953-02-14 1956-05-25 Method and device for processing a semiconductor crystal assembly

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR1107076D Expired FR1107076A (en) 1953-02-14 1954-02-13 Method and device for processing a semiconductor crystal assembly

Country Status (6)

Country Link
US (5) US3086856A (en)
CH (2) CH334388A (en)
DE (2) DE1061527B (en)
FR (2) FR1107076A (en)
GB (2) GB775986A (en)
NL (5) NL127108C (en)

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL180311B (en) * 1952-08-01 Ciba Geigy PROCESS FOR PREPARING N-HALOGENACYLANILINOALKAN CARBON ACID ESTERS AND PROCESS FOR PREPARATION OF MICROBICIDE PREPARATIONS FOR CONTROL OF PHYTOPATHOGEN FUNGI AND BACTERIA BASED ON SUCH ESTERS.
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
DE975158C (en) * 1953-12-30 1961-09-14 Siemens Ag Method and device for crucible-free zone melting of an elongated rod-shaped body
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
NL104388C (en) * 1956-11-28
GB844813A (en) * 1957-05-01 1960-08-17 Sylvania Electric Prod Zone melting apparatus
DE1169683B (en) * 1957-05-31 1964-05-06 Siemens Ag Method for crucible-free zone melting of a semiconductor rod
DE1238448B (en) * 1957-07-26 1967-04-13 Siemens Ag Method for doping a rod-shaped semiconductor body
DE1121223B (en) * 1957-08-29 1962-01-04 Philips Nv Process for the production of semiconducting bodies for semiconductor arrangements
NL234451A (en) * 1957-12-27
NL235481A (en) * 1958-02-19
NL240421A (en) * 1958-07-30
NL240020A (en) * 1958-08-16
DE1719025A1 (en) * 1958-09-20 1900-01-01
NL244873A (en) * 1958-11-17
DE1203230B (en) * 1958-12-12 1965-10-21 Siemens Ag Process for the production of rods made of semiconductor material that are uniformly doped over their entire length
DE1164681B (en) * 1958-12-24 1964-03-05 Siemens Ag Process for the production of a uniformly doped rod made of semiconductor material by crucible-free zone melting
US3119778A (en) * 1959-01-20 1964-01-28 Clevite Corp Method and apparatus for crystal growth
DE1152269B (en) * 1959-04-28 1963-08-01 Siemens Ag Device for crucible-free zone melting of a semiconductor rod in a vacuum chamber
US3206286A (en) * 1959-07-23 1965-09-14 Westinghouse Electric Corp Apparatus for growing crystals
NL252591A (en) * 1959-08-17
NL255530A (en) * 1959-09-11
DE1161043B (en) * 1959-09-15 1964-01-09 Siemens Ag Method and device for reducing the cross section of a semiconductor rod by means of crucible-free zone melting
NL258961A (en) * 1959-12-23
DE1114171B (en) * 1959-12-31 1961-09-28 Siemens Ag Holder for rod-shaped semiconductor material in devices for crucible-free zone melting
US3026188A (en) * 1960-04-11 1962-03-20 Clevite Corp Method and apparatus for growing single crystals
NL264214A (en) * 1960-05-02 1900-01-01
DE1188555B (en) * 1960-05-10 1965-03-11 Wacker Chemie Gmbh Process for the production of highly pure crystalline bodies from nitrides, phosphides or arsenides of III. Main group of the periodic table
US3241925A (en) * 1960-08-19 1966-03-22 Union Carbide Corp Apparatus for growing solid homogeneous compositions
GB963843A (en) * 1960-08-22 1964-07-15 Ass Elect Ind Improvements relating to zone melting by electron beam furnaces
DE1303150B (en) * 1961-01-13 1971-05-13 Philips Nv
US3226248A (en) * 1962-03-14 1965-12-28 Texaco Experiment Inc Method of producing refractory monocrystalline boron structures
DE1251272B (en) * 1962-04-18 1967-10-05 N. V. Philips' Gloeilampenrabrieken, Eindhoven (Niederlande) Method and device for producing a rod by drawing it from a melt
US3226193A (en) * 1962-06-21 1965-12-28 Union Carbide Corp Method for growing crystals
NL301284A (en) * 1962-12-10
US3259468A (en) * 1963-05-02 1966-07-05 Monsanto Co Slim crystalline rod pullers with centering means
DE1217926B (en) * 1963-08-17 1966-06-02 Siemens Ag Method for avoiding streaks in metal or semiconductor crystals
DE1251721B (en) * 1963-10-28 1967-10-12 Siemens Aktiengesellschaft, Berlin und München München Method for producing semiconductor stalls, preferably semiconductor stalls with adjustable, for example constant, foreign matter concentration
DE1224273B (en) * 1964-06-23 1966-09-08 Siemens Ag Device for crucible-free zone melting
US3231430A (en) * 1964-12-28 1966-01-25 Titanium Metals Corp Conditioning ingots
US3453370A (en) * 1965-06-11 1969-07-01 Us Air Force Continuous floating zone refining system
DE1265708B (en) * 1965-11-30 1968-04-11 Siemens Ag Device for crucible-free zone melting
DE1272886B (en) * 1966-09-24 1968-07-18 Siemens Ag Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
US3515836A (en) * 1968-06-24 1970-06-02 Business Assets Corp Elevator means for a heat scanner device
FR1598493A (en) * 1968-12-18 1970-07-06
US3661599A (en) * 1969-03-25 1972-05-09 Martin Marietta Corp HIGH TEMPERATURE TiC-VC STRUCTURAL MATERIALS
US3935059A (en) * 1969-07-21 1976-01-27 U.S. Philips Corporation Method of producing single crystals of semiconductor material by floating-zone melting
US3620682A (en) * 1969-10-31 1971-11-16 Siemens Ag Apparatus for producing rod-shaped members of crystalline material
US4072556A (en) * 1969-11-29 1978-02-07 Siemens Aktiengesellschaft Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same
US3925108A (en) * 1970-11-25 1975-12-09 Gen Electric Method for preparing decomposable materials with controlled resistivity
US3943324A (en) * 1970-12-14 1976-03-09 Arthur D. Little, Inc. Apparatus for forming refractory tubing
US4197157A (en) * 1975-03-19 1980-04-08 Arthur D. Little, Inc. Method for forming refractory tubing
US3939035A (en) * 1971-03-31 1976-02-17 Siemens Aktiengesellschaft Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density
DE2127968A1 (en) * 1971-05-10 1972-11-16 Aktiengesellschaft Brown, Boveri & Cie, Baden (Schweiz) Process and device for influencing the crystalline structure of alloys and application of this process
CA957180A (en) * 1971-06-16 1974-11-05 Massachusetts, Institute Of Technology Alloy compositions containing non-dendritic solids and process for preparing and casting same
DE2143112A1 (en) * 1971-08-27 1973-03-01 Siemens Ag METHOD FOR ACHIEVING A UNIFORM RADIAL RESISTANCE PROGRESS IN THE PRODUCTION OF A SEMICONDUCTOR SINGLE CRYSTAL ROD BY CRUCIBLE-FREE ZONE MELTING
US4157373A (en) * 1972-04-26 1979-06-05 Rca Corporation Apparatus for the production of ribbon shaped crystals
DE2319700C3 (en) * 1973-04-18 1980-11-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for influencing the radial resistance curve in a semiconductor single crystal rod during crucible-free zone melting and devices for carrying out the process
US3996011A (en) * 1973-11-22 1976-12-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
USRE29825E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3988197A (en) * 1973-11-22 1976-10-26 Siemens Aktiengesellschaft Crucible-free zone melting of semiconductor crystal rods including oscillation dampening
US3936346A (en) * 1973-12-26 1976-02-03 Texas Instruments Incorporated Crystal growth combining float zone technique with the water cooled RF container method
BE811057A (en) * 1974-02-15 1974-08-16 Elphiac Sa UNIVERSAL MACHINE FOR THE PREPARATION OF SINGLE CRYSTALS FROM SEMICONDUCTOR MATERIALS OR OTHERS FOLLOWING CLASSIC METHODS.
US4125425A (en) * 1974-03-01 1978-11-14 U.S. Philips Corporation Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
US4186173A (en) * 1975-04-11 1980-01-29 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
US4078897A (en) * 1975-04-11 1978-03-14 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
US4650540A (en) * 1975-07-09 1987-03-17 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
JPS604599B2 (en) * 1976-03-17 1985-02-05 株式会社東芝 Method for producing lithium tantalate single crystal
DE2640377A1 (en) * 1976-09-08 1978-03-09 Leybold Heraeus Gmbh & Co Kg DEVICE FOR ZONE PULLING OF SINGLE CRYSTAL BARS
JPS53135037A (en) * 1977-04-28 1978-11-25 Nichiden Kikai Kk Heating apparatus
US4218282A (en) * 1977-06-17 1980-08-19 Kabushiki Kaisha Suwa Seikosha Method of preparation of chrysoberyl and beryl single crystals
DK371977A (en) * 1977-08-22 1979-02-23 Topsil As METHOD AND APPLIANCE FOR REFINING SALMON MATERIAL
US4257841A (en) * 1978-01-06 1981-03-24 Monsanto Company Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod
US4317799A (en) * 1979-03-12 1982-03-02 Mobil Tyco Solar Energy Corporation Belt-roller crystal pulling mechanism
FR2455921A2 (en) * 1979-05-08 1980-12-05 Anvar Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps
US4565600A (en) * 1981-04-27 1986-01-21 Criceram Processes for the continuous preparation of single crystals
US4615760A (en) * 1983-01-12 1986-10-07 Dressler Robert F Suppression or control of liquid convection in float zones in a zero-gravity environment by viscous gas shear
EP0221051A1 (en) * 1985-04-16 1987-05-13 Energy Materials Corporation Method and apparatus for growing single crystal bodies
JPS6259594A (en) * 1985-09-11 1987-03-16 Sumitomo Electric Ind Ltd Pulling up method of crystal and apparatus therefor
US4609402A (en) * 1985-10-28 1986-09-02 Iowa State University Research Foundation, Inc. Method of forming magnetostrictive rods from rare earth-iron alloys
US4828608A (en) * 1987-05-14 1989-05-09 Indium Corporation Of America Process for ultrapurification of indium
JPH078495B2 (en) * 1990-11-29 1995-02-01 信越半導体株式会社 Single crystal pulling device automatic cutting device for single crystal pulling device
DE69213059T2 (en) * 1991-03-22 1997-04-10 Shinetsu Handotai Kk Process for growing a single-crystal silicon rod
JP3237564B2 (en) * 1997-03-12 2001-12-10 株式会社村田製作所 Single crystal growth method
FR2834654B1 (en) * 2002-01-16 2004-11-05 Michel Bruel PROCESS FOR TREATING A PART WITH A VIEW TO MODIFYING AT LEAST ONE OF ITS PROPERTIES

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE42294C (en) * HEES 8c WILBERG in Magdeburg, Kronprinzenstr, 1 Block movement on meat weighing machines
US2631356A (en) * 1953-03-17 Method of making p-n junctions
US2254306A (en) * 1939-03-18 1941-09-02 Nat Cylinder Gas Co Apparatus for flame hardening
US2419373A (en) * 1943-09-10 1947-04-22 Metals & Controls Corp Apparatus for vibrating metals during casting
US2623253A (en) * 1948-10-27 1952-12-30 Nat Lead Co Rod casting device
DE804840C (en) * 1948-10-28 1951-04-30 Ernst Teschner Dipl Ing Process for the continuous casting of hollow strings
US2553921A (en) * 1949-04-12 1951-05-22 Jordan James Fernando Continuous casting apparatus
BE500569A (en) * 1950-01-13
US2686864A (en) * 1951-01-17 1954-08-17 Westinghouse Electric Corp Magnetic levitation and heating of conductive materials
US2768914A (en) * 1951-06-29 1956-10-30 Bell Telephone Labor Inc Process for producing semiconductive crystals of uniform resistivity
US2686865A (en) * 1951-10-20 1954-08-17 Westinghouse Electric Corp Stabilizing molten material during magnetic levitation and heating thereof
BE510303A (en) * 1951-11-16
US2770022A (en) * 1952-12-08 1956-11-13 Joseph B Brennan Method of continuously casting molten metal
NL89230C (en) * 1952-12-17 1900-01-01
US3060123A (en) * 1952-12-17 1962-10-23 Bell Telephone Labor Inc Method of processing semiconductive materials
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
DE1017795B (en) * 1954-05-25 1957-10-17 Siemens Ag Process for the production of the purest crystalline substances, preferably semiconductor substances
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
US2809905A (en) * 1955-12-20 1957-10-15 Nat Res Dev Melting and refining metals
DE1076623B (en) * 1957-11-15 1960-03-03 Siemens Ag Device for crucible-free zone drawing of rod-shaped semiconductor material

Also Published As

Publication number Publication date
NL291972A (en) 1965-07-12
NL291970A (en) 1965-07-12
GB775986A (en) 1957-05-29
FR1107076A (en) 1955-12-28
DE1210415B (en) 1966-02-10
GB809163A (en) 1959-02-18
US3086856A (en) 1963-04-23
NL127664C (en) 1969-12-15
NL6601448A (en) 1966-05-25
US3030194A (en) 1962-04-17
US2876147A (en) 1959-03-03
CH348262A (en) 1960-08-15
CH334388A (en) 1958-11-30
DE1061527B (en) 1959-07-16
US3234012A (en) 1966-02-08
NL120780C (en) 1966-05-16
US3216805A (en) 1965-11-09
NL127108C (en) 1969-09-15

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