FR1201878A - Procédé de fabrication d'un corps semi-conducteur - Google Patents

Procédé de fabrication d'un corps semi-conducteur

Info

Publication number
FR1201878A
FR1201878A FR1201878DA FR1201878A FR 1201878 A FR1201878 A FR 1201878A FR 1201878D A FR1201878D A FR 1201878DA FR 1201878 A FR1201878 A FR 1201878A
Authority
FR
France
Prior art keywords
manufacturing process
semiconductor body
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1201878A publication Critical patent/FR1201878A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR1201878D 1957-08-29 1958-08-27 Procédé de fabrication d'un corps semi-conducteur Expired FR1201878A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL220353 1957-08-29

Publications (1)

Publication Number Publication Date
FR1201878A true FR1201878A (fr) 1960-01-06

Family

ID=19750966

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1201878D Expired FR1201878A (fr) 1957-08-29 1958-08-27 Procédé de fabrication d'un corps semi-conducteur

Country Status (2)

Country Link
DE (1) DE1121223B (fr)
FR (1) FR1201878A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1211723B (de) * 1962-11-27 1966-03-03 Siemens Ag Verfahren zur Herstellung von Halbleiterbauelementen
FR2489374A1 (fr) * 1980-09-03 1982-03-05 Westinghouse Electric Corp Structures et materiaux semi-conducteurs haute tension et procede pour les preparer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1277828B (de) * 1963-11-12 1968-09-19 Fuji Electric Co Ltd Verfahren zum Entfernen von unerwuenschten Verunreinigungen aus einem Halbleiterkoerpr

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT183790B (de) * 1951-11-16 1955-11-10 Western Electric Co Verfahren zur Herstellung einer vorbestimmten Verteilung eines oder mehrerer Nebenbestandteile in einem schmelzbaren Körper
BE525774A (fr) * 1953-01-16
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1211723B (de) * 1962-11-27 1966-03-03 Siemens Ag Verfahren zur Herstellung von Halbleiterbauelementen
DE1211723C2 (de) * 1962-11-27 1966-09-08 Siemens Ag Verfahren zur Herstellung von Halbleiterbauelementen
FR2489374A1 (fr) * 1980-09-03 1982-03-05 Westinghouse Electric Corp Structures et materiaux semi-conducteurs haute tension et procede pour les preparer

Also Published As

Publication number Publication date
DE1121223B (de) 1962-01-04

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