FR1326252A - Procédé de fabrication d'un corps monocristallin - Google Patents

Procédé de fabrication d'un corps monocristallin

Info

Publication number
FR1326252A
FR1326252A FR901946A FR901946A FR1326252A FR 1326252 A FR1326252 A FR 1326252A FR 901946 A FR901946 A FR 901946A FR 901946 A FR901946 A FR 901946A FR 1326252 A FR1326252 A FR 1326252A
Authority
FR
France
Prior art keywords
manufacturing process
monocrystalline body
monocrystalline
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR901946A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1326252A publication Critical patent/FR1326252A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/22—Heat treatment; Thermal decomposition; Chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
    • C04B35/2608—Compositions containing one or more ferrites of the group comprising manganese, zinc, nickel, copper or cobalt and one or more ferrites of the group comprising rare earth metals, alkali metals, alkaline earth metals or lead
    • C04B35/2633—Compositions containing one or more ferrites of the group comprising manganese, zinc, nickel, copper or cobalt and one or more ferrites of the group comprising rare earth metals, alkali metals, alkaline earth metals or lead containing barium, strontium or calcium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/0302—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
    • H01F1/0311—Compounds
    • H01F1/0313—Oxidic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/16—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates the magnetic material being applied in the form of particles, e.g. by serigraphy, to form thick magnetic films or precursors therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Structural Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR901946A 1961-06-26 1962-06-26 Procédé de fabrication d'un corps monocristallin Expired FR1326252A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL266376 1961-06-26

Publications (1)

Publication Number Publication Date
FR1326252A true FR1326252A (fr) 1963-05-03

Family

ID=19753113

Family Applications (1)

Application Number Title Priority Date Filing Date
FR901946A Expired FR1326252A (fr) 1961-06-26 1962-06-26 Procédé de fabrication d'un corps monocristallin

Country Status (4)

Country Link
US (1) US3332796A (fr)
DE (1) DE1274563B (fr)
FR (1) FR1326252A (fr)
GB (1) GB943184A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2457913A1 (fr) * 1979-05-31 1980-12-26 Ngk Insulators Ltd Procede de fabrication de monocristaux, en particulier de ferrite, et tetes magnetiques comportant des monocristaux de ferrite ainsi fabriques

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3498836A (en) * 1966-04-25 1970-03-03 Ibm Method for obtaining single crystal ferrite films
US3421933A (en) * 1966-12-14 1969-01-14 North American Rockwell Spinel ferrite epitaxial composite
US3486937A (en) * 1967-03-24 1969-12-30 Perkin Elmer Corp Method of growing a single crystal film of a ferrimagnetic material
US3645787A (en) * 1970-01-06 1972-02-29 North American Rockwell Method of forming multiple layer structures including magnetic domains
US3645788A (en) * 1970-03-04 1972-02-29 North American Rockwell Method of forming multiple-layer structures including magnetic domains
US3946124A (en) * 1970-03-04 1976-03-23 Rockwell International Corporation Method of forming a composite structure
US4046618A (en) * 1972-12-29 1977-09-06 International Business Machines Corporation Method for preparing large single crystal thin films
JPS5133898A (fr) * 1974-09-17 1976-03-23 Hitachi Ltd
US4189521A (en) * 1977-07-05 1980-02-19 Rockwell International Corporation Epitaxial growth of M-type hexagonal ferrite films on spinel substrates and composite
JPS56155100A (en) * 1980-05-02 1981-12-01 Ngk Insulators Ltd Production of single crystal of ferrite
CN113278986B (zh) * 2021-04-08 2022-04-01 深圳大学 一种c轴取向NiFe-LDH薄膜电催化剂及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2759861A (en) * 1954-09-22 1956-08-21 Bell Telephone Labor Inc Process of making photoconductive compounds
DE1040693B (de) * 1955-02-07 1958-10-09 Licentia Gmbh Verfahren zur Herstellung einer halbleitenden stoechiometrischen Verbindung aus Komponenten hoechster Reinheit fuer Halbleiteranordnungen
US2832705A (en) * 1955-03-22 1958-04-29 Degussa Process for improving the stability of base metal thermoelements
NL105256C (fr) * 1956-03-05
DE1098316B (de) * 1957-06-26 1961-01-26 Union Carbide Corp Verfahren zum Herstellen einkristalliner UEberzuege aus dotierten Halbleitergrundstoffen durch Aufdampfen im Vakuum
NL242214A (fr) * 1958-08-11
US3047429A (en) * 1959-03-27 1962-07-31 Rca Corp Magnetic recording medium comprising coatings of ferrite particles of the molar composite amno.bzno.cfe2o3
NL252532A (fr) * 1959-06-30 1900-01-01
US3100158A (en) * 1960-11-02 1963-08-06 Rca Corp Methods for obtaining films of magnetic spinel crystals on substrates
NL276635A (fr) * 1961-03-31
US3109749A (en) * 1961-12-11 1963-11-05 Ibm Wear resistant magnetic recording media

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2457913A1 (fr) * 1979-05-31 1980-12-26 Ngk Insulators Ltd Procede de fabrication de monocristaux, en particulier de ferrite, et tetes magnetiques comportant des monocristaux de ferrite ainsi fabriques

Also Published As

Publication number Publication date
DE1274563B (de) 1968-08-08
US3332796A (en) 1967-07-25
GB943184A (en) 1963-12-04

Similar Documents

Publication Publication Date Title
CH399891A (fr) Procédé de fabrication d'un chocolat thermoconsistant
CH387381A (fr) Procédé de fabrication d'un bloc-cylindres
BE603573A (fr) Procédé de formation d'un corps en matière semi-conductrice
FR1326252A (fr) Procédé de fabrication d'un corps monocristallin
FR1237487A (fr) Fabrication d'un corps céramique semi-cristallin
BE613017A (fr) Procédé de fabrication d'un poussoir
FR1242292A (fr) Procédé de fabrication d'un corps céramique semi-cristallin
CH404202A (fr) Procédé de fabrication d'un corps métallique
CH434081A (fr) Procédé de fabrication d'un corps en céramique semi-cristalline
FR1316491A (fr) Procédé de fabrication de l'acétylène et de l'éthylène
CH395870A (fr) Procédé de fabrication d'un cadran d'horlogerie
FR1201878A (fr) Procédé de fabrication d'un corps semi-conducteur
CH409362A (fr) Procédé de fabrication d'un tube compressible
CH415590A (fr) Procédé de fabrication d'un anti-oxygène
FR1363136A (fr) Procédé de fabrication d'agents propulsifs
FR1301324A (fr) Procédé de fabrication d'aciers au niobium
FR1389867A (fr) Procédé de fabrication d'un corps magnétique en manganèse-bismuth
FR1254366A (fr) Procédé de fabrication d'un corps de régénérateur
FR1344345A (fr) Procédé de fabrication d'oxiranes
FR1288301A (fr) Procédé de fabrication d'éponges artificielles
CH438230A (fr) Procédé de fabrication d'un corps semi-conducteur constitué par un monocristal de germanium
BE615830A (fr) Procédé de fabrication d l'acide omega -aminodécanoïque
FR1314500A (fr) Procédé de fabrication d'acylhydrazinonaphtalènes
FR1330436A (fr) Procédé de fabrication d'un semi-conducteur
FR1279695A (fr) Procédé de fabrication d'un engrais binaire