NL193784C - Geïntegreerde brugschakeling, en werkwijze voor het vervaardigen daarvan. - Google Patents
Geïntegreerde brugschakeling, en werkwijze voor het vervaardigen daarvan. Download PDFInfo
- Publication number
- NL193784C NL193784C NL8503485A NL8503485A NL193784C NL 193784 C NL193784 C NL 193784C NL 8503485 A NL8503485 A NL 8503485A NL 8503485 A NL8503485 A NL 8503485A NL 193784 C NL193784 C NL 193784C
- Authority
- NL
- Netherlands
- Prior art keywords
- power mos
- region
- drain
- mos transistor
- supply
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims description 53
- 239000004065 semiconductor Substances 0.000 claims description 43
- 230000002441 reversible effect Effects 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims 3
- 238000010168 coupling process Methods 0.000 claims 3
- 238000005859 coupling reaction Methods 0.000 claims 3
- 238000010586 diagram Methods 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 11
- 108091006146 Channels Proteins 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 9
- 238000002955 isolation Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8424126A IT1213260B (it) | 1984-12-18 | 1984-12-18 | Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione. |
| IT2412684 | 1984-12-18 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL8503485A NL8503485A (nl) | 1986-07-16 |
| NL193784B NL193784B (nl) | 2000-06-05 |
| NL193784C true NL193784C (nl) | 2000-10-06 |
Family
ID=11212104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8503485A NL193784C (nl) | 1984-12-18 | 1985-12-18 | Geïntegreerde brugschakeling, en werkwijze voor het vervaardigen daarvan. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4949142A (de) |
| JP (1) | JPS61148881A (de) |
| DE (1) | DE3544324C2 (de) |
| FR (1) | FR2574992B1 (de) |
| GB (1) | GB2168534B (de) |
| IT (1) | IT1213260B (de) |
| NL (1) | NL193784C (de) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07114279B2 (ja) * | 1988-01-06 | 1995-12-06 | 株式会社東芝 | 半導体装置 |
| GB2224160A (en) * | 1988-10-24 | 1990-04-25 | Marconi Instruments Ltd | Integrated semiconductor circuits |
| US5198688A (en) * | 1989-03-06 | 1993-03-30 | Fuji Electric Co., Ltd. | Semiconductor device provided with a conductivity modulation MISFET |
| JPH02270367A (ja) * | 1989-04-12 | 1990-11-05 | Hitachi Ltd | 半導体集積回路装置 |
| JP3057757B2 (ja) * | 1990-11-29 | 2000-07-04 | 日産自動車株式会社 | トランジスタ |
| DE69128936T2 (de) * | 1991-11-25 | 1998-07-16 | St Microelectronics Srl | Hochstrom-MOS-Transistor enthaltende integrierte Brückenstruktur mit optimierten Übertragungsleistungsverlusten |
| US5640034A (en) * | 1992-05-18 | 1997-06-17 | Texas Instruments Incorporated | Top-drain trench based resurf DMOS transistor structure |
| KR0127282B1 (ko) * | 1992-05-18 | 1998-04-02 | 도요다 요시또시 | 반도체 장치 |
| DE69207410T2 (de) * | 1992-09-18 | 1996-08-29 | Cons Ric Microelettronica | Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren |
| DE69326771T2 (de) | 1993-12-07 | 2000-03-02 | St Microelectronics Srl | Ausgangstufe mit Transistoren von unterschiedlichem Typ |
| JP2715941B2 (ja) * | 1994-10-31 | 1998-02-18 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5665988A (en) * | 1995-02-09 | 1997-09-09 | Fuji Electric Co., Ltd. | Conductivity-modulation semiconductor |
| DE69624493T2 (de) * | 1996-12-09 | 2003-06-26 | St Microelectronics Srl | Vorrichtung und Verfahren zur Unterdrückung von parasitären Effekten in einer integrierten Schaltung mit pn-Isolationszonen |
| US6246557B1 (en) * | 1998-04-10 | 2001-06-12 | Texas Instruments Incorporated | Loss of ground protection for electronic relays |
| DE19946167C2 (de) * | 1999-09-27 | 2002-04-25 | Infineon Technologies Ag | Integrierte Halbbrückenschaltung |
| CN1723601A (zh) * | 2002-12-10 | 2006-01-18 | 皇家飞利浦电子股份有限公司 | 集成的半桥功率电路 |
| JP4326835B2 (ja) * | 2003-05-20 | 2009-09-09 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法 |
| DE102007031490B4 (de) | 2007-07-06 | 2017-11-16 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleitermoduls |
| US7902608B2 (en) * | 2009-05-28 | 2011-03-08 | International Business Machines Corporation | Integrated circuit device with deep trench isolation regions for all inter-well and intra-well isolation and with a shared contact to a junction between adjacent device diffusion regions and an underlying floating well section |
| US8598655B1 (en) | 2012-08-03 | 2013-12-03 | Infineon Technologies Dresden Gmbh | Semiconductor device and method for manufacturing a semiconductor device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA980012A (en) * | 1971-06-08 | 1975-12-16 | Ncr Corporation | Protective circuits |
| FR2143553B1 (de) * | 1971-06-29 | 1974-05-31 | Sescosem | |
| US4546370A (en) * | 1979-02-15 | 1985-10-08 | Texas Instruments Incorporated | Monolithic integration of logic, control and high voltage interface circuitry |
| US4288801A (en) * | 1979-05-30 | 1981-09-08 | Xerox Corporation | Monolithic HVMOSFET active switch array |
| DE3044444A1 (de) * | 1980-11-26 | 1982-06-16 | Deutsche Itt Industries Gmbh, 7800 Freiburg | "monolithisch integrierte gleichrichter-brueckenschaltung" |
| JPS57162359A (en) * | 1981-03-30 | 1982-10-06 | Toshiba Corp | Semiconductor device |
| DE3400973A1 (de) * | 1984-01-13 | 1985-07-18 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Monolithisch integrierte gleichrichterbrueckenschaltung |
-
1984
- 1984-12-18 IT IT8424126A patent/IT1213260B/it active
-
1985
- 1985-09-06 US US06/773,316 patent/US4949142A/en not_active Expired - Lifetime
- 1985-12-12 GB GB08530656A patent/GB2168534B/en not_active Expired
- 1985-12-14 DE DE3544324A patent/DE3544324C2/de not_active Expired - Fee Related
- 1985-12-17 FR FR858518709A patent/FR2574992B1/fr not_active Expired
- 1985-12-17 JP JP60286853A patent/JPS61148881A/ja active Pending
- 1985-12-18 NL NL8503485A patent/NL193784C/nl not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61148881A (ja) | 1986-07-07 |
| NL8503485A (nl) | 1986-07-16 |
| GB2168534A (en) | 1986-06-18 |
| IT8424126A0 (it) | 1984-12-18 |
| US4949142A (en) | 1990-08-14 |
| IT1213260B (it) | 1989-12-14 |
| NL193784B (nl) | 2000-06-05 |
| DE3544324C2 (de) | 1997-09-25 |
| FR2574992B1 (fr) | 1989-12-08 |
| GB2168534B (en) | 1988-09-01 |
| FR2574992A1 (fr) | 1986-06-20 |
| DE3544324A1 (de) | 1986-06-19 |
| GB8530656D0 (en) | 1986-01-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| V4 | Discontinued because of reaching the maximum lifetime of a patent |
Effective date: 20051218 |