IT8424126A0 - Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione. - Google Patents

Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione.

Info

Publication number
IT8424126A0
IT8424126A0 IT8424126A IT2412684A IT8424126A0 IT 8424126 A0 IT8424126 A0 IT 8424126A0 IT 8424126 A IT8424126 A IT 8424126A IT 2412684 A IT2412684 A IT 2412684A IT 8424126 A0 IT8424126 A0 IT 8424126A0
Authority
IT
Italy
Prior art keywords
procedure
manufacture
integrated
mos transistor
bridge circuit
Prior art date
Application number
IT8424126A
Other languages
English (en)
Other versions
IT1213260B (it
Inventor
Claudio Contiero
Paola Galbiati
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8424126A priority Critical patent/IT1213260B/it
Publication of IT8424126A0 publication Critical patent/IT8424126A0/it
Priority to US06/773,316 priority patent/US4949142A/en
Priority to GB08530656A priority patent/GB2168534B/en
Priority to DE3544324A priority patent/DE3544324C2/de
Priority to JP60286853A priority patent/JPS61148881A/ja
Priority to FR858518709A priority patent/FR2574992B1/fr
Priority to NL8503485A priority patent/NL193784C/nl
Application granted granted Critical
Publication of IT1213260B publication Critical patent/IT1213260B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT8424126A 1984-12-18 1984-12-18 Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione. IT1213260B (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT8424126A IT1213260B (it) 1984-12-18 1984-12-18 Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione.
US06/773,316 US4949142A (en) 1984-12-18 1985-09-06 Integrated N-channel power MOS bridge circuit
GB08530656A GB2168534B (en) 1984-12-18 1985-12-12 Integrated power mos bridge circuit and method
DE3544324A DE3544324C2 (de) 1984-12-18 1985-12-14 Integrierte MOS-Leistungsbrückenschaltung sowie Verfahren zu deren Herstellung
JP60286853A JPS61148881A (ja) 1984-12-18 1985-12-17 集積電力ｍｏｓブリツジ回路
FR858518709A FR2574992B1 (fr) 1984-12-18 1985-12-17 Circuit integre mos de puissance formant un pont et procede de fabrication de ce circuit
NL8503485A NL193784C (nl) 1984-12-18 1985-12-18 Geïntegreerde brugschakeling, en werkwijze voor het vervaardigen daarvan.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8424126A IT1213260B (it) 1984-12-18 1984-12-18 Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione.

Publications (2)

Publication Number Publication Date
IT8424126A0 true IT8424126A0 (it) 1984-12-18
IT1213260B IT1213260B (it) 1989-12-14

Family

ID=11212104

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8424126A IT1213260B (it) 1984-12-18 1984-12-18 Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione.

Country Status (7)

Country Link
US (1) US4949142A (it)
JP (1) JPS61148881A (it)
DE (1) DE3544324C2 (it)
FR (1) FR2574992B1 (it)
GB (1) GB2168534B (it)
IT (1) IT1213260B (it)
NL (1) NL193784C (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07114279B2 (ja) * 1988-01-06 1995-12-06 株式会社東芝 半導体装置
GB2224160A (en) * 1988-10-24 1990-04-25 Marconi Instruments Ltd Integrated semiconductor circuits
US5198688A (en) * 1989-03-06 1993-03-30 Fuji Electric Co., Ltd. Semiconductor device provided with a conductivity modulation MISFET
JPH02270367A (ja) * 1989-04-12 1990-11-05 Hitachi Ltd 半導体集積回路装置
JP3057757B2 (ja) * 1990-11-29 2000-07-04 日産自動車株式会社 トランジスタ
DE69128936T2 (de) * 1991-11-25 1998-07-16 St Microelectronics Srl Hochstrom-MOS-Transistor enthaltende integrierte Brückenstruktur mit optimierten Übertragungsleistungsverlusten
US5640034A (en) * 1992-05-18 1997-06-17 Texas Instruments Incorporated Top-drain trench based resurf DMOS transistor structure
KR0127282B1 (ko) * 1992-05-18 1998-04-02 도요다 요시또시 반도체 장치
DE69207410T2 (de) * 1992-09-18 1996-08-29 Cons Ric Microelettronica Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren
DE69326771T2 (de) 1993-12-07 2000-03-02 St Microelectronics Srl Ausgangstufe mit Transistoren von unterschiedlichem Typ
JP2715941B2 (ja) * 1994-10-31 1998-02-18 日本電気株式会社 半導体装置の製造方法
US5665988A (en) * 1995-02-09 1997-09-09 Fuji Electric Co., Ltd. Conductivity-modulation semiconductor
DE69624493T2 (de) * 1996-12-09 2003-06-26 St Microelectronics Srl Vorrichtung und Verfahren zur Unterdrückung von parasitären Effekten in einer integrierten Schaltung mit pn-Isolationszonen
US6246557B1 (en) * 1998-04-10 2001-06-12 Texas Instruments Incorporated Loss of ground protection for electronic relays
DE19946167C2 (de) * 1999-09-27 2002-04-25 Infineon Technologies Ag Integrierte Halbbrückenschaltung
CN1723601A (zh) * 2002-12-10 2006-01-18 皇家飞利浦电子股份有限公司 集成的半桥功率电路
JP4326835B2 (ja) * 2003-05-20 2009-09-09 三菱電機株式会社 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法
DE102007031490B4 (de) 2007-07-06 2017-11-16 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleitermoduls
US7902608B2 (en) * 2009-05-28 2011-03-08 International Business Machines Corporation Integrated circuit device with deep trench isolation regions for all inter-well and intra-well isolation and with a shared contact to a junction between adjacent device diffusion regions and an underlying floating well section
US8598655B1 (en) 2012-08-03 2013-12-03 Infineon Technologies Dresden Gmbh Semiconductor device and method for manufacturing a semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA980012A (en) * 1971-06-08 1975-12-16 Ncr Corporation Protective circuits
FR2143553B1 (it) * 1971-06-29 1974-05-31 Sescosem
US4546370A (en) * 1979-02-15 1985-10-08 Texas Instruments Incorporated Monolithic integration of logic, control and high voltage interface circuitry
US4288801A (en) * 1979-05-30 1981-09-08 Xerox Corporation Monolithic HVMOSFET active switch array
DE3044444A1 (de) * 1980-11-26 1982-06-16 Deutsche Itt Industries Gmbh, 7800 Freiburg "monolithisch integrierte gleichrichter-brueckenschaltung"
JPS57162359A (en) * 1981-03-30 1982-10-06 Toshiba Corp Semiconductor device
DE3400973A1 (de) * 1984-01-13 1985-07-18 Philips Patentverwaltung Gmbh, 2000 Hamburg Monolithisch integrierte gleichrichterbrueckenschaltung

Also Published As

Publication number Publication date
JPS61148881A (ja) 1986-07-07
NL8503485A (nl) 1986-07-16
GB2168534A (en) 1986-06-18
US4949142A (en) 1990-08-14
IT1213260B (it) 1989-12-14
NL193784B (nl) 2000-06-05
DE3544324C2 (de) 1997-09-25
FR2574992B1 (fr) 1989-12-08
GB2168534B (en) 1988-09-01
FR2574992A1 (fr) 1986-06-20
DE3544324A1 (de) 1986-06-19
GB8530656D0 (en) 1986-01-22
NL193784C (nl) 2000-10-06

Similar Documents

Publication Publication Date Title
IT8424126A0 (it) Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione.
DE3881304D1 (de) Mos-transistor.
KR860700189A (ko) 전계효과 트랜지스터용 무변압기 구동회로
DE3861707D1 (de) Mos-transistoren fuer hohe spannungen.
DE3782367D1 (de) Mos-halbleiterschaltung.
DE3381367D1 (de) Mos-transistor.
FI860222A (fi) Puolijohdekomponentti sisältäen korkeajännite-MOS kanavatransistoreita ja matalajännite-MOS kanavatransistoreita
DE3866016D1 (de) Mos-transistor-brueckenschaltung.
DE3873839T2 (de) Mos-leistungstransistoranordnung.
GB8527062D0 (en) Mos transistor manufacture
DE3576612D1 (de) Halbleiteranordnung mit mos-transistoren.
DE3676259D1 (de) Geschuetzte mos-transistorschaltung.
IT8406620A0 (it) Dispositivo integrato monolitico di potenza e semiconduttore
DE3463882D1 (de) Mos-transistor amplifier
ES557586A0 (es) Perfeccionamientos en un dispositivo transistor mos
DE3686180D1 (de) Vertikaler mos-transistor mit peripherer schaltung.
ITRM910646A1 (it) Struttura di transistore mos e procedimento per la sua fabbricazione
KR890007435A (ko) 쇼트키이(Schottky)게이트 전계효과트랜지스터
DE3370245D1 (de) A mos transistor
DE69027831T2 (de) Integrierte MOS-Schaltung
DE3583301D1 (de) Schutzanordnung fuer einen mos-transistor.
DE68925092D1 (de) MOS-Feldeffekttransistor
DE3581789D1 (de) Mos-typ integrierte schaltung mit ladungs- und entladungstransistoren.
DE59206386D1 (de) MOS-Transistor
IT1213171B (it) Transistore bipolare di potenza.

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227