IT1215309B - Circuito per il pilotaggio in continua ed in alternata di transistori mos di potenza a canale n di standi push-pull a bassa dissipazione. - Google Patents

Circuito per il pilotaggio in continua ed in alternata di transistori mos di potenza a canale n di standi push-pull a bassa dissipazione.

Info

Publication number
IT1215309B
IT1215309B IT8522105A IT2210585A IT1215309B IT 1215309 B IT1215309 B IT 1215309B IT 8522105 A IT8522105 A IT 8522105A IT 2210585 A IT2210585 A IT 2210585A IT 1215309 B IT1215309 B IT 1215309B
Authority
IT
Italy
Prior art keywords
standards
pull
push
continuous
circuit
Prior art date
Application number
IT8522105A
Other languages
English (en)
Other versions
IT8522105A0 (it
Inventor
Carlo Cini
Claudio Diazzi
Domenico Rossi
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Publication of IT8522105A0 publication Critical patent/IT8522105A0/it
Priority to IT8522105A priority Critical patent/IT1215309B/it
Priority to US06/897,561 priority patent/US4736121A/en
Priority to US06/897,467 priority patent/US4727465A/en
Priority to DE3629383A priority patent/DE3629383C2/de
Priority to DE3629612A priority patent/DE3629612C2/de
Priority to NL8602229A priority patent/NL192482C/nl
Priority to NL8602230A priority patent/NL8602230A/nl
Priority to FR868612444A priority patent/FR2587155B1/fr
Priority to FR868612445A priority patent/FR2587156B1/fr
Priority to JP61210517A priority patent/JP2609852B2/ja
Priority to GB8621573A priority patent/GB2180422B/en
Priority to GB8621574A priority patent/GB2180423B/en
Priority to SE8603761A priority patent/SE467854B/sv
Priority to JP61213711A priority patent/JP2673508B2/ja
Priority to SE8603760A priority patent/SE467853B/sv
Application granted granted Critical
Publication of IT1215309B publication Critical patent/IT1215309B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Amplifiers (AREA)
  • Manipulation Of Pulses (AREA)
  • Control Of Electrical Variables (AREA)
  • Dc-Dc Converters (AREA)
  • Logic Circuits (AREA)
  • Inverter Devices (AREA)
IT8522105A 1985-09-10 1985-09-10 Circuito per il pilotaggio in continua ed in alternata di transistori mos di potenza a canale n di standi push-pull a bassa dissipazione. IT1215309B (it)

Priority Applications (15)

Application Number Priority Date Filing Date Title
IT8522105A IT1215309B (it) 1985-09-10 1985-09-10 Circuito per il pilotaggio in continua ed in alternata di transistori mos di potenza a canale n di standi push-pull a bassa dissipazione.
US06/897,561 US4736121A (en) 1985-09-10 1986-08-18 Charge pump circuit for driving N-channel MOS transistors
US06/897,467 US4727465A (en) 1985-09-10 1986-08-18 Drive circuit for N-channel power MOS transistors of push-pull stages
DE3629383A DE3629383C2 (de) 1985-09-10 1986-08-29 Schaltungsanordnung mit einer Ladungspumpe zum Ansteuern von N-Kanal-MOS-Transistoren
DE3629612A DE3629612C2 (de) 1985-09-10 1986-08-30 Treiberschaltung für MOS-Leistungstransistoren in Gegentaktstufen
NL8602230A NL8602230A (nl) 1985-09-10 1986-09-03 Ladingspompcircuit voor het aandrijven van n-kanaal mos transistoren.
NL8602229A NL192482C (nl) 1985-09-10 1986-09-03 Stuurcircuit voor vermogens MOS-transistoren van balanstrappen.
FR868612444A FR2587155B1 (fr) 1985-09-10 1986-09-04 Circuit de commande pour des transistors mos de puissance a canal n montes dans des etages push-pull
FR868612445A FR2587156B1 (fr) 1985-09-10 1986-09-04 Circuit de pompe de charge pour commander des transistors mos a canal n
JP61210517A JP2609852B2 (ja) 1985-09-10 1986-09-05 充電ポンプ回路
GB8621573A GB2180422B (en) 1985-09-10 1986-09-08 Driving circuit for n-channel power mos transistors of push-pull stages
GB8621574A GB2180423B (en) 1985-09-10 1986-09-08 Charge pump circuit for driving n-channel mos transistors
SE8603761A SE467854B (sv) 1985-09-10 1986-09-09 Drivkrets foer effekt-mos-transistorer med n-kanal i mottaktssteg
JP61213711A JP2673508B2 (ja) 1985-09-10 1986-09-09 駆動回路
SE8603760A SE467853B (sv) 1985-09-10 1986-09-09 Laddningspumpkrets foer drivning av mos-transistorer med n-kanal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8522105A IT1215309B (it) 1985-09-10 1985-09-10 Circuito per il pilotaggio in continua ed in alternata di transistori mos di potenza a canale n di standi push-pull a bassa dissipazione.

Publications (2)

Publication Number Publication Date
IT8522105A0 IT8522105A0 (it) 1985-09-10
IT1215309B true IT1215309B (it) 1990-01-31

Family

ID=11191566

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8522105A IT1215309B (it) 1985-09-10 1985-09-10 Circuito per il pilotaggio in continua ed in alternata di transistori mos di potenza a canale n di standi push-pull a bassa dissipazione.

Country Status (8)

Country Link
US (1) US4727465A (it)
JP (1) JP2673508B2 (it)
DE (1) DE3629612C2 (it)
FR (1) FR2587155B1 (it)
GB (1) GB2180422B (it)
IT (1) IT1215309B (it)
NL (1) NL192482C (it)
SE (1) SE467854B (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703407A (en) * 1986-11-26 1987-10-27 The Babcock & Wilcox Company Power supply for totem pole power switches
US4779015A (en) * 1987-05-26 1988-10-18 International Business Machines Corporation Low voltage swing CMOS receiver circuit
JPH0178430U (it) * 1987-11-16 1989-05-26
NL8702847A (nl) * 1987-11-27 1989-06-16 Philips Nv Dc-ac brugschakeling.
IT1228509B (it) * 1988-10-28 1991-06-19 Sgs Thomson Microelectronics Dispositivo per generare una tensione di alimentazione flottante per un circuito bootstrap capacitivo
JPH02284516A (ja) * 1989-04-25 1990-11-21 Fujitsu Ltd スイッチング回路
EP0685921B1 (en) * 1994-05-31 1999-12-15 STMicroelectronics S.r.l. Capacitive charge pump, Bicmos circuit for low supply voltage
US5543740A (en) * 1995-04-10 1996-08-06 Philips Electronics North America Corporation Integrated half-bridge driver circuit
EP0823147B1 (en) * 1995-11-07 2004-07-28 Koninklijke Philips Electronics N.V. Bridge circuit arrangement
US5754065A (en) * 1995-11-07 1998-05-19 Philips Electronics North America Corporation Driving scheme for a bridge transistor
JPH09245191A (ja) * 1996-03-06 1997-09-19 Sega Enterp Ltd 透明度変換方法及びその装置、画像処理装置
DE19728283A1 (de) 1997-07-02 1999-01-07 Siemens Ag Ansteuerschaltung für ein steuerbares Halbleiterbauelement
US6169431B1 (en) 1998-06-02 2001-01-02 Infineon Technologies Ag Drive circuit for a controllable semiconductor component
US6856177B1 (en) * 2003-07-22 2005-02-15 International Rectifier Corporation High side power switch with charge pump and bootstrap capacitor
JP4820544B2 (ja) * 2004-10-27 2011-11-24 株式会社エヌエフ回路設計ブロック リニア動作の電力増幅回路および電力増幅器
JP2010135943A (ja) * 2008-12-02 2010-06-17 Seiko Epson Corp 容量性負荷の充放電回路
TWI523148B (zh) * 2010-10-22 2016-02-21 國立交通大學 提升高電子遷移率電晶體元件崩潰電壓的方法
US9041433B2 (en) 2013-06-21 2015-05-26 Infineon Technologies Austria Ag System and method for driving transistors
TWI697197B (zh) 2020-01-30 2020-06-21 群光電能科技股份有限公司 應用於馬達逆變器的閘極驅動電路及閘極驅動方法
US20240396442A1 (en) * 2023-05-25 2024-11-28 Stmicroelectronics International N.V. Charge pump integration in wireless charger power management integrated circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3018501A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Schalter mit einem als source-folger betriebenen mis-pet
USH97H (en) * 1982-12-21 1986-08-05 At&T Bell Laboratories Row-address-decoder-driver circuit
EP0126788B1 (de) * 1983-05-27 1987-06-03 Deutsche ITT Industries GmbH MOS-Bootstrap-Gegentaktstufe
US4550359A (en) * 1984-02-10 1985-10-29 Honeywell Inc. Voltage transient protection circuit for MOSFET power transistors

Also Published As

Publication number Publication date
JPS6261421A (ja) 1987-03-18
US4727465A (en) 1988-02-23
GB8621573D0 (en) 1986-10-15
SE467854B (sv) 1992-09-21
SE8603761L (sv) 1987-03-11
DE3629612C2 (de) 1995-04-20
SE8603761D0 (sv) 1986-09-09
FR2587155A1 (fr) 1987-03-13
NL192482B (nl) 1997-04-01
NL192482C (nl) 1997-08-04
GB2180422A (en) 1987-03-25
NL8602229A (nl) 1987-04-01
IT8522105A0 (it) 1985-09-10
GB2180422B (en) 1989-08-16
FR2587155B1 (fr) 1991-11-29
DE3629612A1 (de) 1987-03-19
JP2673508B2 (ja) 1997-11-05

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Effective date: 19970929