FR2587155B1 - Circuit de commande pour des transistors mos de puissance a canal n montes dans des etages push-pull - Google Patents

Circuit de commande pour des transistors mos de puissance a canal n montes dans des etages push-pull

Info

Publication number
FR2587155B1
FR2587155B1 FR868612444A FR8612444A FR2587155B1 FR 2587155 B1 FR2587155 B1 FR 2587155B1 FR 868612444 A FR868612444 A FR 868612444A FR 8612444 A FR8612444 A FR 8612444A FR 2587155 B1 FR2587155 B1 FR 2587155B1
Authority
FR
France
Prior art keywords
push
control circuit
mos transistors
channel power
power mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR868612444A
Other languages
English (en)
Other versions
FR2587155A1 (fr
Inventor
Carlo Cini
Claudio Diazzi
Domenico Rossi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA
Publication of FR2587155A1 publication Critical patent/FR2587155A1/fr
Application granted granted Critical
Publication of FR2587155B1 publication Critical patent/FR2587155B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Manipulation Of Pulses (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
  • Inverter Devices (AREA)
  • Dc-Dc Converters (AREA)
  • Logic Circuits (AREA)
FR868612444A 1985-09-10 1986-09-04 Circuit de commande pour des transistors mos de puissance a canal n montes dans des etages push-pull Expired - Lifetime FR2587155B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8522105A IT1215309B (it) 1985-09-10 1985-09-10 Circuito per il pilotaggio in continua ed in alternata di transistori mos di potenza a canale n di standi push-pull a bassa dissipazione.

Publications (2)

Publication Number Publication Date
FR2587155A1 FR2587155A1 (fr) 1987-03-13
FR2587155B1 true FR2587155B1 (fr) 1991-11-29

Family

ID=11191566

Family Applications (1)

Application Number Title Priority Date Filing Date
FR868612444A Expired - Lifetime FR2587155B1 (fr) 1985-09-10 1986-09-04 Circuit de commande pour des transistors mos de puissance a canal n montes dans des etages push-pull

Country Status (8)

Country Link
US (1) US4727465A (fr)
JP (1) JP2673508B2 (fr)
DE (1) DE3629612C2 (fr)
FR (1) FR2587155B1 (fr)
GB (1) GB2180422B (fr)
IT (1) IT1215309B (fr)
NL (1) NL192482C (fr)
SE (1) SE467854B (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703407A (en) * 1986-11-26 1987-10-27 The Babcock & Wilcox Company Power supply for totem pole power switches
US4779015A (en) * 1987-05-26 1988-10-18 International Business Machines Corporation Low voltage swing CMOS receiver circuit
NL8702847A (nl) * 1987-11-27 1989-06-16 Philips Nv Dc-ac brugschakeling.
IT1228509B (it) * 1988-10-28 1991-06-19 Sgs Thomson Microelectronics Dispositivo per generare una tensione di alimentazione flottante per un circuito bootstrap capacitivo
JPH02284516A (ja) * 1989-04-25 1990-11-21 Fujitsu Ltd スイッチング回路
DE69422164T2 (de) * 1994-05-31 2000-04-20 St Microelectronics Srl Kapazitive Ladungspumpe, Bicmos Schaltung für niedrige Versorgungsspannung
US5543740A (en) * 1995-04-10 1996-08-06 Philips Electronics North America Corporation Integrated half-bridge driver circuit
US5754065A (en) * 1995-11-07 1998-05-19 Philips Electronics North America Corporation Driving scheme for a bridge transistor
EP0823147B1 (fr) * 1995-11-07 2004-07-28 Koninklijke Philips Electronics N.V. Structure de circuit en pont
JPH09245191A (ja) * 1996-03-06 1997-09-19 Sega Enterp Ltd 透明度変換方法及びその装置、画像処理装置
DE19728283A1 (de) * 1997-07-02 1999-01-07 Siemens Ag Ansteuerschaltung für ein steuerbares Halbleiterbauelement
US6169431B1 (en) 1998-06-02 2001-01-02 Infineon Technologies Ag Drive circuit for a controllable semiconductor component
US6856177B1 (en) * 2003-07-22 2005-02-15 International Rectifier Corporation High side power switch with charge pump and bootstrap capacitor
JP4820544B2 (ja) * 2004-10-27 2011-11-24 株式会社エヌエフ回路設計ブロック リニア動作の電力増幅回路および電力増幅器
JP2010135943A (ja) * 2008-12-02 2010-06-17 Seiko Epson Corp 容量性負荷の充放電回路
TWI523148B (zh) * 2010-10-22 2016-02-21 國立交通大學 提升高電子遷移率電晶體元件崩潰電壓的方法
US9041433B2 (en) 2013-06-21 2015-05-26 Infineon Technologies Austria Ag System and method for driving transistors
TWI697197B (zh) 2020-01-30 2020-06-21 群光電能科技股份有限公司 應用於馬達逆變器的閘極驅動電路及閘極驅動方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3018501A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Schalter mit einem als source-folger betriebenen mis-pet
USH97H (en) * 1982-12-21 1986-08-05 At&T Bell Laboratories Row-address-decoder-driver circuit
EP0126788B1 (fr) * 1983-05-27 1987-06-03 Deutsche ITT Industries GmbH Amplificateur bootstrap du type push-pull aux transistors MOS
US4550359A (en) * 1984-02-10 1985-10-29 Honeywell Inc. Voltage transient protection circuit for MOSFET power transistors

Also Published As

Publication number Publication date
GB2180422A (en) 1987-03-25
DE3629612C2 (de) 1995-04-20
US4727465A (en) 1988-02-23
IT8522105A0 (it) 1985-09-10
GB8621573D0 (en) 1986-10-15
NL192482C (nl) 1997-08-04
DE3629612A1 (de) 1987-03-19
NL192482B (nl) 1997-04-01
SE8603761D0 (sv) 1986-09-09
JPS6261421A (ja) 1987-03-18
IT1215309B (it) 1990-01-31
GB2180422B (en) 1989-08-16
SE467854B (sv) 1992-09-21
SE8603761L (sv) 1987-03-11
JP2673508B2 (ja) 1997-11-05
NL8602229A (nl) 1987-04-01
FR2587155A1 (fr) 1987-03-13

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Legal Events

Date Code Title Description
D6 Patent endorsed licences of rights
ST Notification of lapse