TWI523148B - 提升高電子遷移率電晶體元件崩潰電壓的方法 - Google Patents

提升高電子遷移率電晶體元件崩潰電壓的方法 Download PDF

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TWI523148B
TWI523148B TW099136116A TW99136116A TWI523148B TW I523148 B TWI523148 B TW I523148B TW 099136116 A TW099136116 A TW 099136116A TW 99136116 A TW99136116 A TW 99136116A TW I523148 B TWI523148 B TW I523148B
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electron mobility
high electron
source electrode
breakdown voltage
mobility transistors
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張翼
許恒通
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國立交通大學
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Priority to JP2010266130A priority patent/JP5874889B2/ja
Priority to KR1020110018565A priority patent/KR101377165B1/ko
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Description

提升高電子遷移率電晶體元件崩潰電壓的方法
本發明係有關於一種電晶體結構，尤指一種串接式之高電子遷移率電晶體元件之製造方法。
氮化鎵(GaN)和以氮化鎵為主的材料可應用於高溫、高功率、和高頻之微電子裝置，上述材料具有寬能隙特性、低熱載子產生率、高崩潰電場、高電子遷移率、和高電子速度等特性，使氮化鎵系統之電晶體具有高速、高溫、高功率等優勢。
目前以第Ⅲ族氮化物材料為基礎的元件之研發大致朝向於高功率、高頻率的用途，例如手機基地台的發射器等等。第Ⅲ族氮化物的元件係由於整體元件結構具有高電子遷移率而產生上述特性，且元件有各種不同的名稱，諸如異質接面場效電晶體(HFET)，高電子遷移率電晶體(HEMT)，或調節摻雜的場效電晶體(MODFET)等。此類元件通常能夠承受100V或更高範圍的高電壓，同時能以高頻率來操作，例如在為2至100GHz的範圍中運作。就半導體物理而言，上述元件係利用壓電極化以產生二維電子氣(2DEG)來操作，其能以非常低的阻抗損耗來傳輸非常高的電流。
然而，隨著高溫、高壓的運用領域不斷的開發，元件在嚴苛的操作環境下的可靠度亦成為發展的重點。一種傳統可達到高電壓操作電晶體的方式是在閘極區使用場 板，但此技術大幅增加製程的困難度，且元件之崩潰電壓的調整則受到場板的限制。
又，另一傳統技術利用質子佈植製程將質子植入電晶體通道層，以提出元件的崩潰電壓；然而，此方式將造成晶格缺陷的產生，亦可能影響二維電子氣的分佈，導致元件的特性受到影響。
本發明之目的，在於提供低成本的製程，以將高電子遷移率電晶體在製程中進行串接，以簡化製程，避免製程影響元件特性，而符合市場的需求。
本發明係提供一種串接式之高電子遷移率電晶體元件之製作方法，包含以下步驟：提供一基板；成型一緩衝層於該基板上；成型一壁障層於該緩衝層上，其中該緩衝層與該壁障層之間的異質界面具有二維電子氣體，該二維電子氣體定義出一主動區域；成型至少一隔離結構，以定義出至少兩個高電子遷移率電晶體；在每一該高電子遷移率電晶體的該壁障層上成型一源極電極及一汲極電極，該源極電極與該汲極電極均電連接於該主動區域；在每一該高電子遷移率電晶體的該壁障層上成型一閘極電極，該閘極電極係位於該源極電極與該汲極電極之間且電連接於該主動區域；以及串接該至少兩個高電子遷移率電晶體，以形成串接式高電子遷移率電晶體，其中，該至少兩個高電子遷移率電晶體的其中之一之該源極電極係連接於該至少兩個高電子遷移率電晶體的其中之另一之該汲極電 極，且該至少兩個高電子遷移率電晶體的該閘極電極係彼此連接。
本發明具有以下有益的效果：本發明主要利用半導體製程的改善，於製程之中將各個高電子遷移率電晶體進行串接，故在製程上具有成本低、製程彈性大等優勢，且所製成之串接式之高電子遷移率電晶體元件具有可累加的崩潰電壓，故可視不同的應用串接多個電晶體，使本發明之高崩潰電壓元件可滿足高溫、高壓的電路應用領域。
為使能更進一步瞭解本發明之特徵及技術內容，請參閱以下有關本發明之詳細說明與附圖，然而所附圖式僅提供參考與說明用，並非用來對本發明加以限制者。
本發明提出一種串接式之高電子遷移率電晶體元件之製造方法，其係於製程中整合多個高電子遷移率電晶體(HEMT)，以形成單一的、積體整合(integrated)的串接式之高電子遷移率電晶體元件，進而提高電晶體元件的崩潰電壓，使元件更符合高功率之電路系統或高溫、高壓的操作環境。
請參考第一A圖至第一H圖及第二圖；本發明所提出的串接式之高電子遷移率電晶體元件之製造方法包括以下步驟：首先，如第一A圖所示，提供一基板10；該基板10可為一高電子遷移率電晶體的載板，例如氮化鎵(GaN)基板、碳化矽(SiC)基板、氮化鋁(AlN)基板、氮化鋁 鎵(AlGaN)基板、鑽石基板、藍寶石(sapphire)基板或矽(Si)基板等等，本發明並不限制基板10的材質，其僅需符合將第三族之氮化物成長於其上的目的即可。
接著，在基板10上成型一緩衝層11，並於緩衝層11上成型壁障層(barrier layer)12；緩衝層11可為高阻值結構，其可為一層摻雜(doped)或未摻雜(undoped)之第三族(Group Ⅲ)之氮化物，例如在本具體實施例中，緩衝層11係為氮化鎵(GaN)層，其可使用任一種適當方法或技術來形成，舉例而言，氮化鎵之緩衝層11可藉氣相技術來形成，其中反應氣體物種(例如氨、三甲基鎵)進入設置上述基板10的成長反應器中，反應氣體物種可在基板10上方沈積形成磊晶薄膜(例如摻混來自於氨分子的氮和來自於三甲基鎵分子的鎵所形成之GaN薄膜)。該反應可於適當溫度進行，例如於500℃至1200℃範圍之溫度，或於700℃至1100℃之較佳的溫度範圍，或甚至於900℃至1000℃之更佳的範圍；反應器內壓力可維持於適當條件，例如於20毫巴至950毫巴之間。
同於緩衝層11，壁障層12可為摻雜或未摻雜的第三族之氮化物，例如在本具體實施例中，壁障層12可為單層的AlN或AlGaN；亦或者，壁障層12可具有多層之第三族之氮化物，如AlN及AlGaN。壁障層12的特性之一在於其能隙(bandgap)會大於緩衝層11的能隙；且壁障層12需具有特定的鋁含量，使壁障層12與緩衝層11的接面上具有高的載子濃度，換言之，緩衝層11與壁障層12之間的異質界面(hetero-interface)因高載子濃 度而具有二維電子氣體(two dimensional electron gas，2DEG)，該二維電子氣體定義出一主動區域111，而主動區域111大致地位於緩衝層11中而接近上述異質界面處約數十微米(nm)處。
下一步驟係為成型至少一隔離結構13，以定義出至少兩個高電子遷移率電晶體，請參考第一B圖，本具體實施例係以兩個隔離結構13，將元件區隔成三個電晶體之態樣進行說明，但不以此為限。隔離結構13的作用在於將上述的緩衝層11、主動區域111與壁障層12實體地區分成多個區域，所區隔成的區域則為所要進行串接的高電子遷移率電晶體。具體而言，隔離結構13可為一種絕緣材料，其係貫穿緩衝層11、壁障層12與主動區域111，使隔離結構13位於被區隔的兩個高電子遷移率電晶體之間，以將被區隔的兩個高電子遷移率電晶體的緩衝層11、壁障層12與主動區域111加以隔絕，而隔離結構13可以黃光、蝕刻等半導體製程所製作。
接下來，下一步驟係為在每一該高電子遷移率電晶體的該壁障層12上成型一源極電極及一汲極電極；請參考第一C圖至第一E所示，先利用黃光製程以光阻PR1定義出歐姆接觸區域(如第一C圖)，再沈積金屬層M1(如第一D圖)，接著去除光阻PR1，即可形成所述的源極電極與汲極電極。如圖所示，本具體實施例中，最左側之區域成型有源極電極S1與汲極電極D1，中間之區域成型有源極電極S2與汲極電極D2，最右側之區域成型有源極電極S3與汲極電極D3。另外，源極電極與汲極電 極均電連接於該主動區域111，舉例而言，可利用退火等製程形成低阻值的連接，使源極電極與汲極電極以歐姆接觸的方式電連接於該主動區域111；在具體實施例中，源極電極與汲極電極可為鈦、鋁、金、鎳或其合金，但不以此為限。
下一步驟係在每一該高電子遷移率電晶體的壁障層12上成型一閘極電極，閘極電極係位於源極電極與汲極電極之間且電連接於該主動區域111；如第一F圖，先利用黃光製程以光阻PR2定義出閘極區域，再沈積金屬層M2(如第一G圖)，接著去除光阻PR2，即可形成所述的閘極電極。如圖所示，本具體實施例中，最左側之區域成型有閘極電極G1，且閘極電極G1位於源極電極S1與汲極電極D1之間；中間之區域成型有閘極電極G2，且閘極電極G2位於源極電極S2與汲極電極D2之間；最右側之區域成型有閘極電極G3，且閘極電極G3位於源極電極S3與汲極電極D3之間。而所述之閘極電極可為鎳、金、鈦、鉻、鉑或其合金，閘極電極同於源極電極S3與汲極電極而電連接於主動區域111。
藉此，請配合第一H圖，本實施例即可製作出三個彼此隔離之高電子遷移率電晶體HEMT1、HEMT2、HEMT3，以電晶體HEMT1而言，當閘極電極G1受偏壓時，電子流即可藉由形成主動區域111之二維電子氣體在源極電極S1與汲極電極D1之間產生，而產生ON/OFF的開關動作。
下一步驟係為串接該至少兩個高電子遷移率電晶 體，以形成串接式高電子遷移率電晶體。如第一H圖所示，高電子遷移率電晶體HEMT1的汲極電極D1可連接於高電子遷移率電晶體HEMT2的源極電極S2，高電子遷移率電晶體HEMT2的汲極電極D2則連接於高電子遷移率電晶體HEMT3的源極電極S3，且高電子遷移率電晶體HEMT1、HEMT2、HEMT3之閘極電極G1、G2、G3則彼此連接，藉此即可將高電子遷移率電晶體HEMT1、HEMT2、HEMT3進行串聯，而對高電子遷移率電晶體HEMT1、HEMT2、HEMT3所形成之串接式之高電子遷移率電晶體元件而言，元件的崩潰電壓則可藉由電路串聯之相加效果而獲致高崩潰電壓的功效。換言之，本發明係將至少兩個高電子遷移率電晶體的其中之一的源極電極連接於該至少兩個高電子遷移率電晶體的其中之另一之該汲極電極，且該至少兩個高電子遷移率電晶體的該閘極電極係彼此連接，以達到串接電晶體的效果。
而在具體實施例，如第二圖所示，其顯示本發明的串接式之高電子遷移率電晶體元件之俯視圖，其僅顯示高電子遷移率電晶體HEMT1、HEMT2的串接結構，其中，可利用半導體製程，如黃光、蝕刻、金屬沈積等製作內連接線路14將該至少兩個高電子遷移率電晶體串接，如閘極電極G1、G2之間具有內連接線路14，該內連接線路14更連接至焊墊P1，以和外部電路連接；而源極電極S1、汲極電極D2則連接於焊墊P2、P3，以為電路之輸入端及輸出端。
綜上所述，本發明依據上述具體實施例的方法，製作出一種串接式之高電子遷移率電晶體元件，包含：彼此串接的至少兩個高電子遷移率電晶體(如電晶體HEMT1、HEMT2、HEMT3)，其中該至少兩個高電子遷移率電晶體係成型於一基板10上並以隔離結構13隔絕者。而每一該高電子遷移率電晶體均包括：一設於該基板10上之緩衝層11；一設於該緩衝層11上之壁障層12，緩衝層11與壁障層12之間的異質界面具有二維電子氣體，該二維電子氣體定義出一主動區域111；一源極電極(如S1、S2、S3)、一汲極電極(如D1、D2、D3)及一閘極電極(如G1、G2、G3)，該源極電極、該汲極電極及該閘極電極均設於該壁障層12上且均電連接於該主動區域111；其中，該至少兩個高電子遷移率電晶體的其中之一之該源極電極係連接於該至少兩個高電子遷移率電晶體的其中之另一之該汲極電極，且該至少兩個高電子遷移率電晶體的該閘極電極係彼此連接。藉由本發明所提出之方法與結構，高電子遷移率電晶體可於製程中進行串接的目的，使串聯後所形成之元件具有高崩潰電壓的特性。
綜上所述，本發明具有下列諸項優點：
1、本發明利用製程的調整將各級高電子遷移率電晶體加以串接，故串接後之等效電路可大幅提高整體元件的崩潰電壓。
2、另外，本發明所使用的製程簡單，並不需要額外增加複雜的製程步驟，故可以低成本的方式達到高崩潰電 壓的目的；尤其，本發明的製程不會造成損害元件特性的問題。
3、本發明之高崩潰電壓元件可應用於車用、太空應用或高功率等領域，並有助於提升功率電路操作於高溫、高壓環境下的可靠度。
以上所述僅為本發明之較佳可行實施例，非因此侷限本發明之專利範圍，故舉凡運用本發明說明書及圖示內容所為之等效技術變化，均包含於本發明之範圍內。
10‧‧‧基板
11‧‧‧緩衝層
111‧‧‧主動區域
12‧‧‧壁障層
13‧‧‧隔離結構
14‧‧‧內連接線路
PR1、PR2‧‧‧光阻
M1、M2‧‧‧金屬層
HEMT1、HEMT2、HEMT3‧‧‧高電子遷移率電晶體
S1、S2、S3‧‧‧源極電極
D1、D2、D3‧‧‧汲極電極
G1、G2、G3‧‧‧閘極電極
P1、P2、P3‧‧‧焊墊
第一A圖至第一H圖係顯示本發明之串接式之高電子遷移率電晶體元件之製造方法的流程示意圖。
第二圖係為本發明之串接式之高電子遷移率電晶體元件的俯視圖。
10‧‧‧基板
11‧‧‧緩衝層
111‧‧‧主動區域
12‧‧‧壁障層
13‧‧‧隔離結構
HEMT1、HEMT2、HEMT3‧‧‧高電子遷移率電晶體
S1、S2、S3‧‧‧源極電極
D1、D2、D3‧‧‧汲極電極
G1、G2、G3‧‧‧閘極電極

Claims (4)

  1. 一種提升高電子遷移率電晶體元件崩潰電壓的方法，包括：提供數個高電子遷移率電晶體元件，每一該高電子遷移率電晶體包括：一設於該基板上之緩衝層；一設於該緩衝層上之壁障層，該緩衝層與該壁障層之間的異質界面具有二維電子氣體，該二維電子氣體定義出一主動區域；一源極電極、一汲極電極及一閘極電極，該源極電極、該汲極電極及該閘極電極均設於該壁障層上且電連接於該主動區域；將該至少兩個高電子遷移率電晶體的其中之一之該源極電極係連接於該至少兩個高電子遷移率電晶體的其中之另一之該汲極電極，且將該至少兩個高電子遷移率電晶體的該閘極電極彼此連接，以提升該些高電子遷移率電晶體元件之等效電路的崩潰電壓。
  2. 如申請專利範圍第1項所述之提升高電子遷移率電晶體元件崩潰電壓的方法，其中每一該高電子遷移率電晶體之該源極電極與該汲極電極係歐姆接觸地電連接於每一該高電子遷移率電晶體之該主動區域。
  3. 如申請專利範圍第1項所述之提升高電子遷移率電晶體元件崩潰電壓的方法，其中該緩衝層係為一層摻雜或未摻雜之第三族之氮化物。
  4. 如申請專利範圍第1項所述之提升高電子遷移率電晶體元件崩潰電壓的方法，其中將該至少兩個高電子遷移率電晶體的其中之一之該源極電極係連接於該至少兩個高電子遷移率電晶體的其中之另一之該汲極電極，且將該至少兩個高電子遷移率電晶體的該閘極電極彼此連接係利用半導體製程製作內連接線路進行。
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