JP2014107566A - フッ化物系または塩化物系化合物を含むゲート誘電体を備えたiii族窒化物系トランジスタ - Google Patents
フッ化物系または塩化物系化合物を含むゲート誘電体を備えたiii族窒化物系トランジスタ Download PDFInfo
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- 150000001875 compounds Chemical class 0.000 title abstract description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 title abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 26
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims abstract description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 21
- 150000004767 nitrides Chemical class 0.000 claims description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 17
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 239000000460 chlorine Substances 0.000 claims description 6
- 150000001805 chlorine compounds Chemical class 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- LVEULQCPJDDSLD-UHFFFAOYSA-L cadmium fluoride Chemical compound F[Cd]F LVEULQCPJDDSLD-UHFFFAOYSA-L 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 235000011164 potassium chloride Nutrition 0.000 claims description 3
- 239000001103 potassium chloride Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 198
- 238000000151 deposition Methods 0.000 description 7
- 230000003321 amplification Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000009349 indirect transmission Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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Abstract
【解決手段】ICデバイスは、基板102上に配置された、ガリウム(Ga)と窒素(N)を含むバッファ層104と、該バッファ層上に配置された、アルミニウム(Al)と窒素(N)を含むバリア層106と、ゲート端子108と、該ゲート端子とバリア層間およびまたは該ゲート端子とバッファ層間に配置されたゲート誘電体層114と、を備え、該ゲート誘電体層は、フッ化カルシウム(CaF2)などの、フッ化物系または塩化物系化合物を含む。
【選択図】図1
Description
Claims (25)
- 基板上に堆積された、第1の窒化物系材料を含むバッファ層と、
前記バッファ層上に堆積された、第2の窒化物系材料を含むバリア層と、
前記バリア層内、その上またはその下に堆積された、フッ素(F)または塩素(Cl)を含むゲート誘電体層と、
前記ゲート誘電体層上に配置されたゲート端子と、を備え、前記ゲート誘電体層は、前記ゲート端子と前記バリア層間、または前記ゲート端子と前記バッファ層間に配置されることを特徴とする装置。 - 前記ゲート誘電体層は、フッ化カルシウム(CaF2)、フッ化カドミウム(CdF2)あるいは塩化カリウム(KCl)を含むことを特徴とする請求項1に記載の装置。
- 前記バッファ層は、窒化ガリウム(GaN)を含むことを特徴とする請求項1に記載の装置。
- 前記バリア層は、窒化アルミニウムガリウム(AlGaN)、窒化アルミニウムインジウム(InAlN)あるいは窒化インジウムガリウムアルミニウム(InGaAlN)を含むことを特徴とする請求項3に記載の装置。
- 前記バリア層に凹部をさらに含み、前記ゲート誘電体層は前記凹部に配置されることを特徴とする請求項1に記載の装置。
- エンハンスメントモード高電子移動度トランジスタ(HEMT)デバイスに含まれ、前記ゲート端子は、前記HEMTデバイスのスイッチングを制御するように構成されていることを特徴とする請求項5に記載の装置。
- 前記凹部は、前記バッファ層まで延在していないことを特徴とする請求項5に記載の装置。
- 前記凹部は、前記バッファ層までまたはその内部まで延在し、前記ゲート誘電体層は前記バッファ層上に配置されていることを特徴とする請求項5に記載の装置。
- 前記ゲート誘電体層の厚さは約20Å〜約500Åであることを特徴とする請求項1に記載の装置。
- 前記バリア層上であって、前記ゲート端子の両側に配置されたソース端子とドレイン端子をさらに備えることを特徴とする請求項1に記載の装置。
- 前記バリア層上であって、前記ゲート端子と前記ソース端子間および前記ゲート端子と前記ドレイン端子間の前記バリア層に配置された誘電体層をさらに備えることを特徴とする請求項10に記載の装置。
- 前記ゲート誘電体層は、前記誘電体層と前記バリア層間に配置されていることを特徴とする請求項11に記載の装置。
- 前記ゲート誘電体層は、前記ゲート端子と前記誘電体層間に配置されていることを特徴とする請求項11に記載の装置。
- エンハンスメントモードデバイスであって、前記ゲート端子は、制御電圧を受け取って前記バリア層または前記バッファ層の電流のスイッチングを制御するように構成され、前記制御電圧の動作範囲は1.5V以上であることを特徴とする請求項10に記載の装置。
- デプレッションプモードデバイスであって、前記ゲート端子は、制御電圧を受け取って前記バリア層または前記バッファ層の電流のスイッチングを制御するように構成され、前記制御電圧の動作範囲は、ピンチオフ電圧から約8V以上の電圧までであることを特徴とする請求項10に記載の装置。
- 基板上面に配置された第1の窒化物系材料を含むバッファ層の上面に配置された、第2の窒化物系材料を含むバリア層に凹部をエッチングするステップと、
フッ化物系または塩化物系化合物を含むゲート誘電体層を前記凹部に形成するステップと、
前記ゲート誘電体層上にゲート端子を形成するステップと、を備えることを特徴とする方法。 - 前記ゲート誘電体層は、分子線エピタキシャル法、原子層蒸着法、スパッタリング法、蒸着法あるいは物理的気相蒸着によって形成されることを特徴とする請求項16に記載の方法。
- 前記ゲート誘電体層は、フッ化カルシウム(CaF2)、フッ化カドミウム(CdF2)あるいは塩化カリウム(KCl)を含むことを特徴とする請求項16に記載の方法。
- 前記ゲート端子は、蒸着法で形成された金属を含むことを特徴とする請求項16に記載の方法。
- 前記バリア層上にソース端子を形成するステップと、
前記バリア層上にドレイン端子を形成するステップと、をさらに備えることを特徴とする請求項16に記載の方法。 - 前記凹部内の前記ゲート誘電体層を形成する前記ステップは、フッ化物系または塩化物系化合物のブランケット層を前記バリア層上に形成するステップを備え、
前記ソース端子を形成する前記ステップは、前記ブランケット層の一部を除去するステップと、前記ソース端子を前記除去された一部に形成するステップと、をさらに備えることを特徴とする請求項20に記載の方法。 - 前記ソース端子を形成する前記ステップは、前記ソース端子または前記ドレイン端子下の前記バリア層の一部を除去するステップと、ドープした窒化物材料を前記バリア層の前記除去された一部に再成長させるステップと、前記ドープした窒化物材料の上面に前記ソース端子または前記ドレイン端子を形成するステップと、をさらに備えることを特徴とする請求項21に記載の方法。
- 前記ゲート端子は、制御電圧を受け取って、前記ソース端子と前記ドレイン端子間の電流チャネルを選択的に活性化させるように構成されていることを特徴とする請求項20に記載の方法。
- 前記ゲート端子、前記ソース端子および前記ドレイン端子は、高電子移動度トランジスタ(HEMT)デバイスに含まれることを特徴とする請求項20に記載の方法。
- 前記基板上に前記バッファ層を形成するステップと、
前記バッファ層上に前記バリア層を形成するステップと、をさらに備えることを特徴とする請求項16に記載の方法。
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US13/685,560 US9029914B2 (en) | 2012-11-26 | 2012-11-26 | Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compound |
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US9029914B2 (en) | 2015-05-12 |
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US20140145243A1 (en) | 2014-05-29 |
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