NL179618B - Halfgeleiderinrichting en werkwijze voor het vervaardigen daarvan. - Google Patents

Halfgeleiderinrichting en werkwijze voor het vervaardigen daarvan.

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Publication number
NL179618B
NL179618B NLAANVRAGE7902356,A NL7902356A NL179618B NL 179618 B NL179618 B NL 179618B NL 7902356 A NL7902356 A NL 7902356A NL 179618 B NL179618 B NL 179618B
Authority
NL
Netherlands
Prior art keywords
compound semiconductor
semiconductor device
electrode
rendered conductive
making
Prior art date
Application number
NLAANVRAGE7902356,A
Other languages
English (en)
Other versions
NL179618C (nl
NL7902356A (nl
Original Assignee
Asahi Chemical Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3406278A external-priority patent/JPS54127293A/ja
Priority claimed from JP3406378A external-priority patent/JPS54127292A/ja
Priority claimed from JP9611478A external-priority patent/JPS5524405A/ja
Application filed by Asahi Chemical Ind filed Critical Asahi Chemical Ind
Publication of NL7902356A publication Critical patent/NL7902356A/nl
Publication of NL179618B publication Critical patent/NL179618B/nl
Application granted granted Critical
Publication of NL179618C publication Critical patent/NL179618C/nl

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Hall/Mr Elements (AREA)
NLAANVRAGE7902356,A 1978-03-27 1979-03-26 Halfgeleiderinrichting en werkwijze voor het vervaardigen daarvan. NL179618C (nl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3406278A JPS54127293A (en) 1978-03-27 1978-03-27 Thin film magnetic reluctance effect element and method of fabricating same
JP3406378A JPS54127292A (en) 1978-03-27 1978-03-27 Magnetic sensitive element and method of fabricating same
JP9611478A JPS5524405A (en) 1978-08-09 1978-08-09 Magnetoelectric conversion element and its manufacturing process

Publications (3)

Publication Number Publication Date
NL7902356A NL7902356A (nl) 1979-10-01
NL179618B true NL179618B (nl) 1986-05-01
NL179618C NL179618C (nl) 1986-10-01

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US (1) US4296424A (nl)
DE (1) DE2911660C2 (nl)
NL (1) NL179618C (nl)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3526166C2 (de) * 1984-07-23 1996-05-02 Asahi Chemical Ind Bürstenloser Elektromotor und Verfahren zum Herstellen einer Spuleneinheit für diesen
KR910002313B1 (ko) * 1985-05-10 1991-04-11 아사히가세이고오교 가부시끼가이샤 자전 변환소자
JPH02236183A (ja) * 1989-03-09 1990-09-19 Mitsubishi Electric Corp ホールセンサ装置及びその製造方法
US5047834A (en) * 1989-06-20 1991-09-10 International Business Machines Corporation High strength low stress encapsulation of interconnected semiconductor devices
WO1991014288A1 (en) * 1990-03-07 1991-09-19 Santa Barbara Research Center Magnetoresistor structure and operating method
US5065130A (en) * 1990-03-07 1991-11-12 Santa Barbara Research Center High sensitivity corbino disk magnetoresistor array
JP2557998B2 (ja) * 1990-04-04 1996-11-27 旭化成工業株式会社 ＩｎＡｓホール効果素子
US5543988A (en) * 1993-04-30 1996-08-06 International Business Machines Corporation Hall sensor with high spatial resolution in two directions concurrently
US5486804A (en) * 1993-12-03 1996-01-23 Hughes Aircraft Company Integrated magnetoresistive sensor fabrication method and apparatus
DE4442852A1 (de) * 1994-12-01 1996-06-05 Siemens Ag Hallsensor mit verringertem Einfluß mechanischer Spannungen auf den Offset
JPH08288452A (ja) * 1995-04-20 1996-11-01 Mitsubishi Electric Corp 集積回路装置，及びその製造方法
US6245996B1 (en) * 1996-09-27 2001-06-12 Compaq Computer Corporation Electrical interconnect structure having electromigration-inhibiting segments
US6904675B1 (en) 1996-09-27 2005-06-14 Hewlett-Packard Development, L.P. Method of forming electrical interconnects having electromigration-inhibiting plugs
EP0862064A3 (de) * 1997-02-26 2001-04-18 Securiton General Control Systems Gesellschaft m.b.H. Verfahren zur Herstellung eines Magnetfeldsensors und nach diesem Verfahren hergestellter Sensor
KR100499117B1 (ko) 1998-05-08 2005-07-04 삼성전자주식회사 화합물 반도체 박막의 ｐ형으로의 활성화 방법
JP2000269567A (ja) * 1999-03-18 2000-09-29 Tdk Corp 半導体磁気抵抗素子
KR100583243B1 (ko) * 2001-05-28 2006-05-25 쇼와 덴코 가부시키가이샤 반도체 소자, 반도체층 및 그 제조방법
JP2004103665A (ja) * 2002-09-05 2004-04-02 Toshiba Corp 電子デバイスモジュール
US7084040B2 (en) * 2004-04-23 2006-08-01 Northrop Grumman Corp. Method for growth of group III-V semiconductor material on a dielectric
US9036358B2 (en) * 2011-12-27 2015-05-19 Sony Corporation Terminal device and transparent substrate
TWI619280B (zh) * 2014-04-01 2018-03-21 友達光電股份有限公司 感測元件
US10145906B2 (en) 2015-12-17 2018-12-04 Analog Devices Global Devices, systems and methods including magnetic structures
CN106707644A (zh) * 2017-01-06 2017-05-24 京东方科技集团股份有限公司 短路棒结构及其制作方法以及薄膜晶体管基板
JP7015087B2 (ja) * 2017-03-23 2022-02-02 旭化成エレクトロニクス株式会社 ホール素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
NL149638B (nl) * 1966-04-14 1976-05-17 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting bevattende ten minste een veldeffecttransistor, en halfgeleiderinrichting, vervaardigd volgens deze werkwijze.
US3634927A (en) * 1968-11-29 1972-01-18 Energy Conversion Devices Inc Method of selective wiring of integrated electronic circuits and the article formed thereby
US3716844A (en) * 1970-07-29 1973-02-13 Ibm Image recording on tetrahedrally coordinated amorphous films
US3920485A (en) * 1973-05-21 1975-11-18 Us Navy Thin insulating film containing metallic particles
US3964666A (en) * 1975-03-31 1976-06-22 Western Electric Company, Inc. Bonding contact members to circuit boards
DE2534414A1 (de) * 1975-08-01 1977-02-10 Precision Electronic Component Magneto-widerstand und verfahren zu dessen herstellung
US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance

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Publication number Publication date
DE2911660A1 (de) 1979-10-04
NL179618C (nl) 1986-10-01
DE2911660C2 (de) 1983-02-24
NL7902356A (nl) 1979-10-01
US4296424A (en) 1981-10-20

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