NL186418C - Niet-omkeerbaar in een andere geleidingstoestand te brengen halfgeleiderschakelelement en halfgeleidergeheugeninrichting met ten minste een dergelijk halfgeleiderschakelelement. - Google Patents

Niet-omkeerbaar in een andere geleidingstoestand te brengen halfgeleiderschakelelement en halfgeleidergeheugeninrichting met ten minste een dergelijk halfgeleiderschakelelement.

Info

Publication number
NL186418C
NL186418C NLAANVRAGE7613428,A NL7613428A NL186418C NL 186418 C NL186418 C NL 186418C NL 7613428 A NL7613428 A NL 7613428A NL 186418 C NL186418 C NL 186418C
Authority
NL
Netherlands
Prior art keywords
semi
switch element
conductor
bridged
reversible
Prior art date
Application number
NLAANVRAGE7613428,A
Other languages
English (en)
Other versions
NL7613428A (nl
NL186418B (nl
Original Assignee
Nippon Telegraph & Telephone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph & Telephone filed Critical Nippon Telegraph & Telephone
Publication of NL7613428A publication Critical patent/NL7613428A/nl
Publication of NL186418B publication Critical patent/NL186418B/nl
Application granted granted Critical
Publication of NL186418C publication Critical patent/NL186418C/nl

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1013Thin film varistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3215Doping the layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20Resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/685Hi-Lo semiconductor devices, e.g. memory devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices
    • H10B20/20Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/021Formation of switching materials, e.g. deposition of layers
    • H10N70/023Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • H10N70/25Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/826Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/884Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
NLAANVRAGE7613428,A 1975-12-03 1976-12-02 Niet-omkeerbaar in een andere geleidingstoestand te brengen halfgeleiderschakelelement en halfgeleidergeheugeninrichting met ten minste een dergelijk halfgeleiderschakelelement. NL186418C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14286675A JPS5267532A (en) 1975-12-03 1975-12-03 Semiconductor memory unit

Publications (3)

Publication Number Publication Date
NL7613428A NL7613428A (nl) 1977-06-07
NL186418B NL186418B (nl) 1990-06-18
NL186418C true NL186418C (nl) 1990-11-16

Family

ID=15325415

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7613428,A NL186418C (nl) 1975-12-03 1976-12-02 Niet-omkeerbaar in een andere geleidingstoestand te brengen halfgeleiderschakelelement en halfgeleidergeheugeninrichting met ten minste een dergelijk halfgeleiderschakelelement.

Country Status (6)

Country Link
US (1) US4146902A (nl)
JP (1) JPS5267532A (nl)
CA (1) CA1082809A (nl)
DE (1) DE2653724C3 (nl)
FR (1) FR2334201A1 (nl)
NL (1) NL186418C (nl)

Families Citing this family (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4416049A (en) * 1970-05-30 1983-11-22 Texas Instruments Incorporated Semiconductor integrated circuit with vertical implanted polycrystalline silicon resistor
US4234889A (en) * 1977-05-31 1980-11-18 Texas Instruments Incorporated Metal-to-moat contacts in N-channel silicon gate integrated circuits using discrete second-level polycrystalline silicon
FR2404895A1 (fr) * 1977-09-30 1979-04-27 Radiotechnique Compelec Cellule de memoire programmable a diodes semiconductrices
JPS5498536A (en) * 1978-01-23 1979-08-03 Nippon Telegr & Teleph Corp <Ntt> Memory unit of polycrystal silicon resistor
US4314265A (en) * 1979-01-24 1982-02-02 Xicor, Inc. Dense nonvolatile electrically-alterable memory devices with four layer electrodes
US4475964A (en) * 1979-02-20 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Method of manufacturing a semiconductor device
US4291322A (en) * 1979-07-30 1981-09-22 Bell Telephone Laboratories, Incorporated Structure for shallow junction MOS circuits
DE3036869C2 (de) * 1979-10-01 1985-09-05 Hitachi, Ltd., Tokio/Tokyo Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren
IL61678A (en) * 1979-12-13 1984-04-30 Energy Conversion Devices Inc Programmable cell and programmable electronic arrays comprising such cells
JPS5685934A (en) * 1979-12-14 1981-07-13 Nippon Telegr & Teleph Corp <Ntt> Control signal generating circuit
WO1981002222A1 (en) * 1980-01-21 1981-08-06 Mostek Corp Composit gate interconnect structure
US4476478A (en) * 1980-04-24 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor read only memory and method of making the same
JPS577959A (en) * 1980-06-19 1982-01-16 Toshiba Corp Semiconductor device
JPS5745967A (en) * 1980-09-04 1982-03-16 Toshiba Corp Semiconductor device
US4654680A (en) * 1980-09-24 1987-03-31 Semiconductor Energy Laboratory Co., Ltd. Sidewall gate IGFET
US4420766A (en) * 1981-02-09 1983-12-13 Harris Corporation Reversibly programmable polycrystalline silicon memory element
US4933735A (en) * 1981-02-23 1990-06-12 Unisys Corporation Digital computer having control and arithmetic sections stacked above semiconductor substrate
US5407851A (en) * 1981-02-23 1995-04-18 Unisys Corporation Method of fabricating an electrically alterable resistive component on an insulating layer above a semiconductor substrate
US5148256A (en) * 1981-02-23 1992-09-15 Unisys Corporation Digital computer having an interconnect mechanism stacked above a semiconductor substrate
JPS57194569A (en) * 1981-05-15 1982-11-30 Fairchild Camera Instr Co Schottky diode polysilicon resistor memory cell
US4403399A (en) * 1981-09-28 1983-09-13 Harris Corporation Method of fabricating a vertical fuse utilizing epitaxial deposition and special masking
US4468682A (en) * 1981-11-12 1984-08-28 Gte Laboratories Incorporated Self-aligned high-frequency static induction transistor
FR2523357B1 (fr) * 1982-03-15 1988-03-04 Thomson Csf Matrice d'elements a memoire integres, a double couche de silicium polycristallin de haute resistivite et procede de fabrication
US4590589A (en) * 1982-12-21 1986-05-20 Zoran Corporation Electrically programmable read only memory
US4569121A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer
US4569120A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation
JPS6042855A (ja) * 1983-08-19 1985-03-07 Hitachi Ltd 半導体装置
US4847732A (en) * 1983-09-15 1989-07-11 Mosaic Systems, Inc. Wafer and method of making same
US4651409A (en) * 1984-02-09 1987-03-24 Ncr Corporation Method of fabricating a high density, low power, merged vertical fuse/bipolar transistor
JPH0666433B2 (ja) * 1984-02-09 1994-08-24 エヌ・シー・アール・インターナショナル・インコーポレイテッド 電気的にプログラム可能な読出専用メモリ・セル
US4609241A (en) * 1984-05-25 1986-09-02 4C Electronics, Inc. Programmable programmed socket
US4646427A (en) * 1984-06-28 1987-03-03 Motorola, Inc. Method of electrically adjusting the zener knee of a lateral polysilicon zener diode
US4751197A (en) * 1984-07-18 1988-06-14 Texas Instruments Incorporated Make-link programming of semiconductor devices using laser enhanced thermal breakdown of insulator
US4748490A (en) * 1985-08-01 1988-05-31 Texas Instruments Incorporated Deep polysilicon emitter antifuse memory cell
US4906987A (en) * 1985-10-29 1990-03-06 Ohio Associated Enterprises, Inc. Printed circuit board system and method
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
US4701241A (en) * 1986-10-06 1987-10-20 Rca Corporation Method of making a resistor
GB2222024B (en) * 1988-08-18 1992-02-19 Stc Plc Improvements in integrated circuits
DE3927033C2 (de) * 1988-08-23 2000-12-21 Seiko Epson Corp Halbleiterbauelement mit Antifuse-Elektrodenanordnung und Verfahren zu seiner Herstellung
US4829024A (en) * 1988-09-02 1989-05-09 Motorola, Inc. Method of forming layered polysilicon filled contact by doping sensitive endpoint etching
US5377124A (en) * 1989-09-20 1994-12-27 Aptix Corporation Field programmable printed circuit board
US5012325A (en) * 1990-04-24 1991-04-30 International Business Machines Corp. Thermoelectric cooling via electrical connections
US5151376A (en) * 1990-05-31 1992-09-29 Sgs-Thomson Microelectronics, Inc. Method of making polycrystalline silicon resistors for integrated circuits
JP2950620B2 (ja) * 1990-12-10 1999-09-20 株式会社東芝 半導体装置
US5334880A (en) * 1991-04-30 1994-08-02 International Business Machines Corporation Low voltage programmable storage element
US5294846A (en) * 1992-08-17 1994-03-15 Paivinen John O Method and apparatus for programming anti-fuse devices
DE69324864T2 (de) * 1992-08-21 1999-10-07 Stmicroelectronics, Inc. Verfahren zur Herstellung einer Halbleiter-Speicherstruktur vom vertikalen Typ und nach dem Verfahren hergestellte Struktur
US5581111A (en) * 1993-07-07 1996-12-03 Actel Corporation Dielectric-polysilicon-dielectric antifuse for field programmable logic applications
US5424655A (en) * 1994-05-20 1995-06-13 Quicklogic Corporation Programmable application specific integrated circuit employing antifuses and methods therefor
US5461000A (en) * 1994-07-05 1995-10-24 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacturing dielectric as load resistor in 4T SRAM
JPH08222648A (ja) * 1995-02-14 1996-08-30 Canon Inc 記憶装置
US5741720A (en) * 1995-10-04 1998-04-21 Actel Corporation Method of programming an improved metal-to-metal via-type antifuse
US6087707A (en) * 1996-04-16 2000-07-11 Micron Technology, Inc. Structure for an antifuse cell
US5859562A (en) * 1996-12-24 1999-01-12 Actel Corporation Programming circuit for antifuses using bipolar and SCR devices
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US6229161B1 (en) 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
US6351406B1 (en) 1998-11-16 2002-02-26 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6034882A (en) * 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6385074B1 (en) 1998-11-16 2002-05-07 Matrix Semiconductor, Inc. Integrated circuit structure including three-dimensional memory array
US7157314B2 (en) 1998-11-16 2007-01-02 Sandisk Corporation Vertically stacked field programmable nonvolatile memory and method of fabrication
FR2787240B1 (fr) * 1998-12-14 2002-08-09 St Microelectronics Sa Procede de realisation d'une resistance dans un circuit integre et dispositif integre correspondant de memoire vive statique a quatre transistors et deux resistances
US6717233B1 (en) * 1999-02-01 2004-04-06 Bae Systems Information And Electronic Systems Integration, Inc. Method for fabricating resistors within semiconductor integrated circuit devices
US6690038B1 (en) 1999-06-05 2004-02-10 T-Ram, Inc. Thyristor-based device over substrate surface
FR2799885B1 (fr) * 1999-10-05 2002-01-11 St Microelectronics Sa Potentiometre integre et procede de fabrication correspondant
US6631085B2 (en) * 2000-04-28 2003-10-07 Matrix Semiconductor, Inc. Three-dimensional memory array incorporating serial chain diode stack
US6888750B2 (en) * 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US6624011B1 (en) 2000-08-14 2003-09-23 Matrix Semiconductor, Inc. Thermal processing for three dimensional circuits
US6580124B1 (en) 2000-08-14 2003-06-17 Matrix Semiconductor Inc. Multigate semiconductor device with vertical channel current and method of fabrication
KR100819730B1 (ko) 2000-08-14 2008-04-07 샌디스크 쓰리디 엘엘씨 밀집한 어레이 및 전하 저장 장치와, 그 제조 방법
US6627530B2 (en) 2000-12-22 2003-09-30 Matrix Semiconductor, Inc. Patterning three dimensional structures
US6661730B1 (en) 2000-12-22 2003-12-09 Matrix Semiconductor, Inc. Partial selection of passive element memory cell sub-arrays for write operation
US6545898B1 (en) 2001-03-21 2003-04-08 Silicon Valley Bank Method and apparatus for writing memory arrays using external source of high programming voltage
US6727528B1 (en) 2001-03-22 2004-04-27 T-Ram, Inc. Thyristor-based device including trench dielectric isolation for thyristor-body regions
US7456439B1 (en) 2001-03-22 2008-11-25 T-Ram Semiconductor, Inc. Vertical thyristor-based memory with trench isolation and its method of fabrication
US6897514B2 (en) * 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
US6804162B1 (en) 2001-04-05 2004-10-12 T-Ram, Inc. Read-modify-write memory using read-or-write banks
US6841813B2 (en) * 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US7067850B2 (en) * 2001-10-16 2006-06-27 Midwest Research Institute Stacked switchable element and diode combination
US6624485B2 (en) 2001-11-05 2003-09-23 Matrix Semiconductor, Inc. Three-dimensional, mask-programmed read only memory
US6583452B1 (en) 2001-12-17 2003-06-24 T-Ram, Inc. Thyristor-based device having extended capacitive coupling
FR2836749A1 (fr) * 2002-02-11 2003-09-05 St Microelectronics Sa Cellule memoire a programmation unique
US7427802B2 (en) * 2002-02-11 2008-09-23 Stmicroelectronics S.A. Irreversible reduction of the value of a polycrystalline silicon resistor
FR2836752A1 (fr) * 2002-02-11 2003-09-05 St Microelectronics Sa Cellule memoire a programmation unique
FR2836750A1 (fr) * 2002-02-11 2003-09-05 St Microelectronics Sa Cellule memoire a programmation unique non destructrice
FR2836751A1 (fr) 2002-02-11 2003-09-05 St Microelectronics Sa Cellule memoire a programmation unique non destructrice
US6853049B2 (en) 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6832300B2 (en) 2002-03-20 2004-12-14 Hewlett-Packard Development Company, L.P. Methods and apparatus for control of asynchronous cache
US6737675B2 (en) 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
FR2846463A1 (fr) * 2002-10-28 2004-04-30 St Microelectronics Sa Compteur monotone a base de cellules memoire
FR2846462A1 (fr) * 2002-10-28 2004-04-30 St Microelectronics Sa Compteur monotone croissant en circuit integre
FR2846776A1 (fr) * 2002-10-30 2004-05-07 St Microelectronics Sa Cellule memoire a trois etats
EP1416497A3 (fr) * 2002-10-31 2004-07-21 STMicroelectronics S.A. Cellules mémoire multi-niveaux à programmation unique
FR2846791A1 (fr) * 2002-10-31 2004-05-07 St Microelectronics Sa Element resistif en silicium polycristallin commandable en diminution irreversible de sa valeur
AU2003274579A1 (en) * 2002-12-05 2004-06-23 Koninklijke Philips Electronics N.V. Programmable non-volatile semiconductor memory device
US20060249753A1 (en) * 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes
US7177183B2 (en) 2003-09-30 2007-02-13 Sandisk 3D Llc Multiple twin cell non-volatile memory array and logic block structure and method therefor
JP4908082B2 (ja) * 2006-06-30 2012-04-04 株式会社吉野工業所 容器
US8085571B2 (en) * 2008-01-09 2011-12-27 Eugene Robert Worley High density prom
US20090272958A1 (en) * 2008-05-02 2009-11-05 Klaus-Dieter Ufert Resistive Memory
US20100283053A1 (en) * 2009-05-11 2010-11-11 Sandisk 3D Llc Nonvolatile memory array comprising silicon-based diodes fabricated at low temperature
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL298324A (nl) * 1962-09-28 1900-01-01
US3654531A (en) * 1969-10-24 1972-04-04 Bell Telephone Labor Inc Electronic switch utilizing a semiconductor with deep impurity levels
BE794202A (fr) * 1972-01-19 1973-05-16 Intel Corp Liaison fusible pour circuit integre sur substrat semi-conducteur pour memoires
CH560463A5 (nl) * 1972-09-26 1975-03-27 Siemens Ag
JPS5513426B2 (nl) * 1974-06-18 1980-04-09

Also Published As

Publication number Publication date
DE2653724C3 (de) 1986-10-02
FR2334201B1 (nl) 1980-10-10
CA1082809A (en) 1980-07-29
DE2653724A1 (de) 1977-06-30
DE2653724B2 (de) 1980-04-24
JPS574038B2 (nl) 1982-01-23
NL7613428A (nl) 1977-06-07
JPS5267532A (en) 1977-06-04
US4146902A (en) 1979-03-27
NL186418B (nl) 1990-06-18
FR2334201A1 (fr) 1977-07-01

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