NL186418C - Niet-omkeerbaar in een andere geleidingstoestand te brengen halfgeleiderschakelelement en halfgeleidergeheugeninrichting met ten minste een dergelijk halfgeleiderschakelelement. - Google Patents
Niet-omkeerbaar in een andere geleidingstoestand te brengen halfgeleiderschakelelement en halfgeleidergeheugeninrichting met ten minste een dergelijk halfgeleiderschakelelement.Info
- Publication number
- NL186418C NL186418C NLAANVRAGE7613428,A NL7613428A NL186418C NL 186418 C NL186418 C NL 186418C NL 7613428 A NL7613428 A NL 7613428A NL 186418 C NL186418 C NL 186418C
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- switch element
- conductor
- bridged
- reversible
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 3
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/1013—Thin film varistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
- H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/25—Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14286675A JPS5267532A (en) | 1975-12-03 | 1975-12-03 | Semiconductor memory unit |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7613428A NL7613428A (nl) | 1977-06-07 |
NL186418B NL186418B (nl) | 1990-06-18 |
NL186418C true NL186418C (nl) | 1990-11-16 |
Family
ID=15325415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7613428,A NL186418C (nl) | 1975-12-03 | 1976-12-02 | Niet-omkeerbaar in een andere geleidingstoestand te brengen halfgeleiderschakelelement en halfgeleidergeheugeninrichting met ten minste een dergelijk halfgeleiderschakelelement. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4146902A (nl) |
JP (1) | JPS5267532A (nl) |
CA (1) | CA1082809A (nl) |
DE (1) | DE2653724C3 (nl) |
FR (1) | FR2334201A1 (nl) |
NL (1) | NL186418C (nl) |
Families Citing this family (105)
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FR2846791A1 (fr) * | 2002-10-31 | 2004-05-07 | St Microelectronics Sa | Element resistif en silicium polycristallin commandable en diminution irreversible de sa valeur |
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JP4908082B2 (ja) * | 2006-06-30 | 2012-04-04 | 株式会社吉野工業所 | 容器 |
US8085571B2 (en) * | 2008-01-09 | 2011-12-27 | Eugene Robert Worley | High density prom |
US20090272958A1 (en) * | 2008-05-02 | 2009-11-05 | Klaus-Dieter Ufert | Resistive Memory |
US20100283053A1 (en) * | 2009-05-11 | 2010-11-11 | Sandisk 3D Llc | Nonvolatile memory array comprising silicon-based diodes fabricated at low temperature |
US9627395B2 (en) | 2015-02-11 | 2017-04-18 | Sandisk Technologies Llc | Enhanced channel mobility three-dimensional memory structure and method of making thereof |
US9478495B1 (en) | 2015-10-26 | 2016-10-25 | Sandisk Technologies Llc | Three dimensional memory device containing aluminum source contact via structure and method of making thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL298324A (nl) * | 1962-09-28 | 1900-01-01 | ||
US3654531A (en) * | 1969-10-24 | 1972-04-04 | Bell Telephone Labor Inc | Electronic switch utilizing a semiconductor with deep impurity levels |
BE794202A (fr) * | 1972-01-19 | 1973-05-16 | Intel Corp | Liaison fusible pour circuit integre sur substrat semi-conducteur pour memoires |
CH560463A5 (nl) * | 1972-09-26 | 1975-03-27 | Siemens Ag | |
JPS5513426B2 (nl) * | 1974-06-18 | 1980-04-09 |
-
1975
- 1975-12-03 JP JP14286675A patent/JPS5267532A/ja active Granted
-
1976
- 1976-11-26 DE DE2653724A patent/DE2653724C3/de not_active Expired
- 1976-11-30 CA CA266,907A patent/CA1082809A/en not_active Expired
- 1976-12-02 NL NLAANVRAGE7613428,A patent/NL186418C/nl not_active IP Right Cessation
- 1976-12-02 FR FR7636323A patent/FR2334201A1/fr active Granted
-
1978
- 1978-06-20 US US05/917,260 patent/US4146902A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE2653724C3 (de) | 1986-10-02 |
FR2334201B1 (nl) | 1980-10-10 |
CA1082809A (en) | 1980-07-29 |
DE2653724A1 (de) | 1977-06-30 |
DE2653724B2 (de) | 1980-04-24 |
JPS574038B2 (nl) | 1982-01-23 |
NL7613428A (nl) | 1977-06-07 |
JPS5267532A (en) | 1977-06-04 |
US4146902A (en) | 1979-03-27 |
NL186418B (nl) | 1990-06-18 |
FR2334201A1 (fr) | 1977-07-01 |
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