JPS5498536A - Memory unit of polycrystal silicon resistor - Google Patents

Memory unit of polycrystal silicon resistor

Info

Publication number
JPS5498536A
JPS5498536A JP530678A JP530678A JPS5498536A JP S5498536 A JPS5498536 A JP S5498536A JP 530678 A JP530678 A JP 530678A JP 530678 A JP530678 A JP 530678A JP S5498536 A JPS5498536 A JP S5498536A
Authority
JP
Japan
Prior art keywords
resistor
polycrystal silicon
memory
information
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP530678A
Other languages
Japanese (ja)
Other versions
JPS5738994B2 (en
Inventor
Yoshihito Amamiya
Kotaro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP530678A priority Critical patent/JPS5498536A/en
Publication of JPS5498536A publication Critical patent/JPS5498536A/en
Publication of JPS5738994B2 publication Critical patent/JPS5738994B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To establish the resistor memory unit simple in construction and solid and easy for manufacture, by writing in the memory information based on the reduction in the resistance through conduction and reading out the memory information through the discrimination of the reduction in resistance. CONSTITUTION:The polycrystal silicon resistor used for the polycrystal silicon resistor memory unit is constituted by adding specific impurity with a given concentration ander specific conditions, and the diode 2 is connected in series with the polycrystal silicon resistor 1, the bit wire B is connected to one end of the resistor 1, and the word line W is connected to one end of the diode 2. Further, in writing information, the unit memory cell of the resistor 1 is selected and the current in excess of the threshold value is applied to the unit memory cell, allowing to decrease the resistance of the resistor 1 and to write in the memory information. Then, in case of readout, a given unit memory cell is selected and it is discriminated that the value of current flowing to the resistor 1 corresponded is greater or less to the threshold value, and the readout of information is made from the value.
JP530678A 1978-01-23 1978-01-23 Memory unit of polycrystal silicon resistor Granted JPS5498536A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP530678A JPS5498536A (en) 1978-01-23 1978-01-23 Memory unit of polycrystal silicon resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP530678A JPS5498536A (en) 1978-01-23 1978-01-23 Memory unit of polycrystal silicon resistor

Publications (2)

Publication Number Publication Date
JPS5498536A true JPS5498536A (en) 1979-08-03
JPS5738994B2 JPS5738994B2 (en) 1982-08-18

Family

ID=11607581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP530678A Granted JPS5498536A (en) 1978-01-23 1978-01-23 Memory unit of polycrystal silicon resistor

Country Status (1)

Country Link
JP (1) JPS5498536A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0058748A1 (en) * 1981-02-23 1982-09-01 BURROUGHS CORPORATION (a Delaware corporation) Mask programmable read-only memory stacked above a semiconductor substrate
EP0065916A2 (en) * 1981-05-15 1982-12-01 Fairchild Semiconductor Corporation Schottky diode - polycrystalline silicon resistor memory cell
WO2003069630A2 (en) 2002-02-11 2003-08-21 Stmicroelectronics S.A. Memory cell with non-destructive one-time programming

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0058748A1 (en) * 1981-02-23 1982-09-01 BURROUGHS CORPORATION (a Delaware corporation) Mask programmable read-only memory stacked above a semiconductor substrate
EP0065916A2 (en) * 1981-05-15 1982-12-01 Fairchild Semiconductor Corporation Schottky diode - polycrystalline silicon resistor memory cell
WO2003069630A2 (en) 2002-02-11 2003-08-21 Stmicroelectronics S.A. Memory cell with non-destructive one-time programming
FR2836751A1 (en) * 2002-02-11 2003-09-05 St Microelectronics Sa NON-DESTRUCTIVE SINGLE PROGRAMMING MEMORY CELL
WO2003069630A3 (en) * 2002-02-11 2004-05-06 St Microelectronics Sa Memory cell with non-destructive one-time programming
US7110277B2 (en) 2002-02-11 2006-09-19 Stmicroelectronics S.A. Memory cell with non-destructive one-time programming

Also Published As

Publication number Publication date
JPS5738994B2 (en) 1982-08-18

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