JPS5698791A - Associative memory - Google Patents
Associative memoryInfo
- Publication number
- JPS5698791A JPS5698791A JP111680A JP111680A JPS5698791A JP S5698791 A JPS5698791 A JP S5698791A JP 111680 A JP111680 A JP 111680A JP 111680 A JP111680 A JP 111680A JP S5698791 A JPS5698791 A JP S5698791A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- resistance
- information
- unreversibly
- varies
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
Landscapes
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
PURPOSE: To simplify the constitution by collating memory information with input data by using a variable resistance element whose resistance value depending upon an applied voltage, current or the both varies unreversibly and a semiconductor active element such as a field effect transistor.
CONSTITUTION: To write information "0", input data line D0 is held at a high voltage and inverted input data line D0' at a low voltage; and a voltage higher than the threshold value when variable resistance element R11 varies unreversibly from high resistance to low resistance, current or the both are applied to node N0. Variable resistance element R11 varies unreversibly from high resistance to low resistance. To read the information, write/earth voltage line N0 is held at the earth voltage and collation output line M0 is disconnected from the earth. By holding variable resistance R12 at low resistance, information "1" is written in.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55001116A JPS6045507B2 (en) | 1980-01-09 | 1980-01-09 | associative memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55001116A JPS6045507B2 (en) | 1980-01-09 | 1980-01-09 | associative memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5698791A true JPS5698791A (en) | 1981-08-08 |
JPS6045507B2 JPS6045507B2 (en) | 1985-10-09 |
Family
ID=11492480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55001116A Expired JPS6045507B2 (en) | 1980-01-09 | 1980-01-09 | associative memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6045507B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2141707A1 (en) * | 2008-06-30 | 2010-01-06 | International Business Machines Corporation | High density content addressable memory using phase change devices |
JP2011048894A (en) * | 2009-08-28 | 2011-03-10 | Internatl Business Mach Corp <Ibm> | Associative memory array |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0496114U (en) * | 1991-01-21 | 1992-08-20 |
-
1980
- 1980-01-09 JP JP55001116A patent/JPS6045507B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2141707A1 (en) * | 2008-06-30 | 2010-01-06 | International Business Machines Corporation | High density content addressable memory using phase change devices |
JP2010015663A (en) * | 2008-06-30 | 2010-01-21 | Internatl Business Mach Corp <Ibm> | High density content addressable memory using phase change device |
US7782646B2 (en) | 2008-06-30 | 2010-08-24 | International Business Machines Corporation | High density content addressable memory using phase change devices |
TWI497493B (en) * | 2008-06-30 | 2015-08-21 | Ibm | High density content addressable memory using phase change devices |
JP2011048894A (en) * | 2009-08-28 | 2011-03-10 | Internatl Business Mach Corp <Ibm> | Associative memory array |
Also Published As
Publication number | Publication date |
---|---|
JPS6045507B2 (en) | 1985-10-09 |
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