JPS5793559A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5793559A
JPS5793559A JP17041180A JP17041180A JPS5793559A JP S5793559 A JPS5793559 A JP S5793559A JP 17041180 A JP17041180 A JP 17041180A JP 17041180 A JP17041180 A JP 17041180A JP S5793559 A JPS5793559 A JP S5793559A
Authority
JP
Japan
Prior art keywords
lead
pad
semiconductor device
ground
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17041180A
Other languages
Japanese (ja)
Other versions
JPS6132822B2 (en
Inventor
Takashi Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17041180A priority Critical patent/JPS5793559A/en
Publication of JPS5793559A publication Critical patent/JPS5793559A/en
Publication of JPS6132822B2 publication Critical patent/JPS6132822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49572—Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15173—Fan-out arrangement of the internal vias in a single layer of the multilayer substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To reduce the contacting resistance of a semiconductor device by increasing a lead formed on the outer periphery formed on an insulating film in width larger than the other pad connected to a power source or ground of the wide pads. CONSTITUTION:Pads 7 formed on a tape 1 formed of an insulating film 1 having sprocket holes 2 is formed wider than the lead 5, and the area of the pad connected to the lead for a power source or a ground is increased larger than that of the other pad. Thus, the contacting resistance when a probe is contacted with the pad can be reduced.
JP17041180A 1980-12-03 1980-12-03 Semiconductor device Granted JPS5793559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17041180A JPS5793559A (en) 1980-12-03 1980-12-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17041180A JPS5793559A (en) 1980-12-03 1980-12-03 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5793559A true JPS5793559A (en) 1982-06-10
JPS6132822B2 JPS6132822B2 (en) 1986-07-29

Family

ID=15904420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17041180A Granted JPS5793559A (en) 1980-12-03 1980-12-03 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5793559A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145356A (en) * 1981-03-03 1982-09-08 Nec Corp Semiconductor device
WO1986005322A1 (en) * 1985-02-28 1986-09-12 Sony Corporation Semiconducteur circuit device
JPH0521744U (en) * 1991-09-07 1993-03-23 コクヨ株式会社 Rug for disc
US5237201A (en) * 1989-07-21 1993-08-17 Kabushiki Kaisha Toshiba TAB type semiconductor device and method of manufacturing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH034829Y2 (en) * 1986-05-12 1991-02-07

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523384A (en) * 1975-06-24 1977-01-11 Siemens Ag Comb teeth shaped conductor for semiconductor elements or integrated circuits

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523384A (en) * 1975-06-24 1977-01-11 Siemens Ag Comb teeth shaped conductor for semiconductor elements or integrated circuits

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145356A (en) * 1981-03-03 1982-09-08 Nec Corp Semiconductor device
JPS6216544B2 (en) * 1981-03-03 1987-04-13 Nippon Electric Co
WO1986005322A1 (en) * 1985-02-28 1986-09-12 Sony Corporation Semiconducteur circuit device
US5237201A (en) * 1989-07-21 1993-08-17 Kabushiki Kaisha Toshiba TAB type semiconductor device and method of manufacturing the same
JPH0521744U (en) * 1991-09-07 1993-03-23 コクヨ株式会社 Rug for disc

Also Published As

Publication number Publication date
JPS6132822B2 (en) 1986-07-29

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