JPS5326645A - Thermal runaway prevention circuit for semiconductor integrated circuit - Google Patents

Thermal runaway prevention circuit for semiconductor integrated circuit

Info

Publication number
JPS5326645A
JPS5326645A JP10061776A JP10061776A JPS5326645A JP S5326645 A JPS5326645 A JP S5326645A JP 10061776 A JP10061776 A JP 10061776A JP 10061776 A JP10061776 A JP 10061776A JP S5326645 A JPS5326645 A JP S5326645A
Authority
JP
Japan
Prior art keywords
thermal runaway
semiconductor integrated
circuit
runaway prevention
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10061776A
Other languages
Japanese (ja)
Other versions
JPS6036650B2 (en
Inventor
Yoshio Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP51100617A priority Critical patent/JPS6036650B2/en
Publication of JPS5326645A publication Critical patent/JPS5326645A/en
Publication of JPS6036650B2 publication Critical patent/JPS6036650B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electronic Switches (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE: To decrease the power consumption of an IC, to increase the reliability of protecting transistor and to prevent a thermal runaway, by providing a positive feedback controlled by a collector voltage between the collector and the base of a transistor, whose base is applied with a reference voltage which is equivalent to the transistor's threshold voltage at the temperature to be detected.
COPYRIGHT: (C)1978,JPO&Japio
JP51100617A 1976-08-25 1976-08-25 semiconductor integrated circuit Expired JPS6036650B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51100617A JPS6036650B2 (en) 1976-08-25 1976-08-25 semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51100617A JPS6036650B2 (en) 1976-08-25 1976-08-25 semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5326645A true JPS5326645A (en) 1978-03-11
JPS6036650B2 JPS6036650B2 (en) 1985-08-21

Family

ID=14278793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51100617A Expired JPS6036650B2 (en) 1976-08-25 1976-08-25 semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6036650B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6240817A (en) * 1985-08-16 1987-02-21 New Japan Radio Co Ltd Heat cutting-off circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63313183A (en) * 1987-06-16 1988-12-21 Fuji Xerox Co Ltd Cleaning method for photosensitive body by electrophotographic method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6240817A (en) * 1985-08-16 1987-02-21 New Japan Radio Co Ltd Heat cutting-off circuit

Also Published As

Publication number Publication date
JPS6036650B2 (en) 1985-08-21

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