NL1011324C2 - Diëlektrische keramische samenstelling, gelamineerde keramische condensator, en werkwijze voor het vervaardigen van de gelamineerde keramische condensator. - Google Patents
Diëlektrische keramische samenstelling, gelamineerde keramische condensator, en werkwijze voor het vervaardigen van de gelamineerde keramische condensator. Download PDFInfo
- Publication number
- NL1011324C2 NL1011324C2 NL1011324A NL1011324A NL1011324C2 NL 1011324 C2 NL1011324 C2 NL 1011324C2 NL 1011324 A NL1011324 A NL 1011324A NL 1011324 A NL1011324 A NL 1011324A NL 1011324 C2 NL1011324 C2 NL 1011324C2
- Authority
- NL
- Netherlands
- Prior art keywords
- dielectric ceramic
- dielectric
- ceramic capacitor
- preparation
- laminated
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 title claims description 152
- 239000000203 mixture Substances 0.000 title claims description 118
- 239000003985 ceramic capacitor Substances 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000005245 sintering Methods 0.000 claims description 62
- 239000002245 particle Substances 0.000 claims description 39
- 239000000843 powder Substances 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 23
- 229910052788 barium Inorganic materials 0.000 claims description 22
- 229910052791 calcium Inorganic materials 0.000 claims description 22
- 239000007858 starting material Substances 0.000 claims description 19
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 7
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052691 Erbium Inorganic materials 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- 229910052689 Holmium Inorganic materials 0.000 claims description 4
- 229910052771 Terbium Inorganic materials 0.000 claims description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 description 100
- 239000010410 layer Substances 0.000 description 63
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- 238000009472 formulation Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 239000000654 additive Substances 0.000 description 17
- 230000000996 additive effect Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 239000010936 titanium Substances 0.000 description 15
- 239000002002 slurry Substances 0.000 description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000007423 decrease Effects 0.000 description 10
- 229910002113 barium titanate Inorganic materials 0.000 description 9
- 239000010953 base metal Substances 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 9
- 238000001465 metallisation Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 230000001419 dependent effect Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000011258 core-shell material Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 150000004703 alkoxides Chemical class 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- 150000004679 hydroxides Chemical class 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000010532 solid phase synthesis reaction Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- UZFMOKQJFYMBGY-UHFFFAOYSA-N 4-hydroxy-TEMPO Chemical compound CC1(C)CC(O)CC(C)(C)N1[O] UZFMOKQJFYMBGY-UHFFFAOYSA-N 0.000 description 1
- 244000291564 Allium cepa Species 0.000 description 1
- 235000002732 Allium cepa var. cepa Nutrition 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 108010093488 His-His-His-His-His-His Proteins 0.000 description 1
- 102000001839 Neurturin Human genes 0.000 description 1
- 108010015406 Neurturin Proteins 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- RXJRSPBZRVRVLM-UHFFFAOYSA-N OOOOOOOOOOOOOOOOOOOOOOOOOO Chemical compound OOOOOOOOOOOOOOOOOOOOOOOOOO RXJRSPBZRVRVLM-UHFFFAOYSA-N 0.000 description 1
- 240000002657 Thymus vulgaris Species 0.000 description 1
- 235000007303 Thymus vulgaris Nutrition 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000001585 thymus vulgaris Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3517198 | 1998-02-17 | ||
JP3517298 | 1998-02-17 | ||
JP3517198 | 1998-02-17 | ||
JP3517298 | 1998-02-17 | ||
JP23380698A JP3945033B2 (ja) | 1998-02-17 | 1998-08-20 | 積層セラミックコンデンサの製造方法 |
JP23380798A JP3603607B2 (ja) | 1998-02-17 | 1998-08-20 | 誘電体セラミック、積層セラミックコンデンサおよび積層セラミックコンデンサの製造方法 |
JP23380698 | 1998-08-20 | ||
JP23380798 | 1998-08-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL1011324C2 true NL1011324C2 (nl) | 1999-08-18 |
Family
ID=27460050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1011324A NL1011324C2 (nl) | 1998-02-17 | 1999-02-17 | Diëlektrische keramische samenstelling, gelamineerde keramische condensator, en werkwijze voor het vervaardigen van de gelamineerde keramische condensator. |
Country Status (6)
Country | Link |
---|---|
US (2) | US6225250B1 (ko) |
KR (1) | KR100307681B1 (ko) |
CN (2) | CN1089324C (ko) |
DE (1) | DE19906582B4 (ko) |
NL (1) | NL1011324C2 (ko) |
TW (1) | TW434600B (ko) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3918372B2 (ja) * | 1999-07-26 | 2007-05-23 | 株式会社村田製作所 | 誘電体セラミック組成物、および積層セラミックコンデンサ |
JP2001240466A (ja) * | 2000-02-28 | 2001-09-04 | Taiyo Yuden Co Ltd | 誘電体磁器と積層セラミック電子部品 |
JP4100173B2 (ja) * | 2003-01-08 | 2008-06-11 | 株式会社村田製作所 | 誘電体セラミックおよび積層セラミックコンデンサ |
US6900150B2 (en) * | 2003-04-29 | 2005-05-31 | Cts Corporation | Ceramic composition and method |
JP2005145791A (ja) * | 2003-11-19 | 2005-06-09 | Tdk Corp | 電子部品、誘電体磁器組成物およびその製造方法 |
JP4203452B2 (ja) | 2004-06-28 | 2009-01-07 | Tdk株式会社 | 積層型セラミックコンデンサの製造方法 |
CN1716473B (zh) * | 2004-06-29 | 2010-05-05 | 王蕾雅 | 一种以真空溅镀法制作多层陶瓷电容器的方法 |
CN100390099C (zh) * | 2004-07-08 | 2008-05-28 | 株式会社村田制作所 | 介电陶瓷组合物和单片陶瓷电容器 |
JP4572628B2 (ja) * | 2004-08-30 | 2010-11-04 | Tdk株式会社 | 誘電体磁器組成物及び電子部品 |
US7387755B2 (en) * | 2005-03-21 | 2008-06-17 | Praxair Technology, Inc. | Method of making a ceramic composite |
KR100674846B1 (ko) * | 2005-03-29 | 2007-01-26 | 삼성전기주식회사 | 유전체용 세라믹분말의 제조방법, 및 그 세라믹분말을이용하여 제조된 적층세라믹커패시터 |
JP4721069B2 (ja) * | 2005-06-14 | 2011-07-13 | 株式会社村田製作所 | セラミック板の製造方法 |
KR100631995B1 (ko) * | 2005-07-28 | 2006-10-09 | 삼성전기주식회사 | 저온 소성용 유전체 자기조성물 및 이를 이용한 적층세라믹 콘덴서 |
CN101341558B (zh) * | 2006-07-03 | 2011-01-12 | 株式会社村田制作所 | 带可变阻功能的层叠型半导体陶瓷电容器及其制造方法 |
JP2008078593A (ja) * | 2006-09-20 | 2008-04-03 | Taiyo Yuden Co Ltd | 積層セラミックコンデンサ及びその製造方法 |
US7541306B2 (en) * | 2007-01-17 | 2009-06-02 | Ferro Corporation | X8R dielectric composition for use with nickel electrodes |
US7521390B2 (en) * | 2007-03-05 | 2009-04-21 | Ferro Corporation | Ultra low temperature fixed X7R and BX dielectric ceramic composition and method of making |
WO2010013414A1 (ja) * | 2008-07-29 | 2010-02-04 | 株式会社村田製作所 | 積層セラミックコンデンサ |
KR101548785B1 (ko) * | 2012-05-08 | 2015-08-31 | 삼성전기주식회사 | 적층 세라믹 부품 |
KR101420535B1 (ko) * | 2012-12-13 | 2014-07-16 | 삼성전기주식회사 | 유전체 조성물 및 이를 유전체층으로 포함하는 적층형 세라믹 콘덴서 |
KR101933417B1 (ko) * | 2016-12-28 | 2018-12-28 | 삼성전기 주식회사 | 유전체 파우더 및 이를 이용한 적층형 커패시터 |
CN107500754B (zh) * | 2017-09-30 | 2020-01-14 | 厦门松元电子有限公司 | 一种用于高容高压mlcc的陶瓷介质材料及其制备方法 |
JP2019134098A (ja) * | 2018-01-31 | 2019-08-08 | Tdk株式会社 | 積層セラミックコンデンサ |
US10923279B2 (en) * | 2018-10-22 | 2021-02-16 | Murata Manufacturing Co., Ltd. | Multilayer ceramic electronic component |
KR20190121229A (ko) * | 2018-12-12 | 2019-10-25 | 삼성전기주식회사 | 적층 세라믹 전자부품 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5742588A (en) * | 1980-08-25 | 1982-03-10 | Saito Osamu | Heat-insulating material for spray filling |
US4845062A (en) * | 1987-10-19 | 1989-07-04 | E. I. Du Pont De Nemours And Company | Low-firing dielectric composition |
JPH0779004B2 (ja) * | 1990-10-31 | 1995-08-23 | 株式会社村田製作所 | 誘電体磁器組成物 |
JPH07118431B2 (ja) | 1991-03-16 | 1995-12-18 | 太陽誘電株式会社 | 磁器コンデンサ及びその製造方法 |
DE4220681C2 (de) * | 1991-06-27 | 1995-09-14 | Murata Manufacturing Co | Nichtreduzierende, dielektrische, keramische Zusammensetzung |
DE69209417T2 (de) * | 1991-09-25 | 1996-11-28 | Murata Manufacturing Co | Nichtreduzierbare dielektrische keramische Zusammensetzung |
JP3227859B2 (ja) * | 1993-01-08 | 2001-11-12 | 株式会社村田製作所 | 非還元性誘電体磁器組成物 |
JP2764513B2 (ja) * | 1993-01-21 | 1998-06-11 | ティーディーケイ株式会社 | 耐還元性誘電体磁器組成物 |
US5510305A (en) * | 1993-06-15 | 1996-04-23 | Murata Manufacturing Co., Ltd. | Non-reducible dielectric ceramic composition |
JP3450903B2 (ja) * | 1994-07-19 | 2003-09-29 | 京セラ株式会社 | 非還元性誘電体磁器組成物 |
KR100192563B1 (ko) * | 1995-01-12 | 1999-06-15 | 무라따 야스따까 | 모놀리식 세라믹 커패시터 |
GB9504443D0 (en) * | 1995-03-06 | 1995-04-26 | Cookson Group Plc | Temperature stable dielectric |
US5646081A (en) | 1995-04-12 | 1997-07-08 | Murata Manufacturing Co., Ltd. | Non-reduced dielectric ceramic compositions |
TW321776B (ko) * | 1995-07-21 | 1997-12-01 | Tdk Electronics Co Ltd | |
JP2998639B2 (ja) * | 1996-06-20 | 2000-01-11 | 株式会社村田製作所 | 積層セラミックコンデンサ |
JP3282520B2 (ja) * | 1996-07-05 | 2002-05-13 | 株式会社村田製作所 | 積層セラミックコンデンサ |
JP3180681B2 (ja) * | 1996-07-19 | 2001-06-25 | 株式会社村田製作所 | 積層セラミックコンデンサ |
JP3391269B2 (ja) * | 1998-01-20 | 2003-03-31 | 株式会社村田製作所 | 誘電体セラミックおよびその製造方法、ならびに、積層セラミック電子部品およびその製造方法 |
-
1999
- 1999-02-12 TW TW088102293A patent/TW434600B/zh not_active IP Right Cessation
- 1999-02-17 US US09/251,663 patent/US6225250B1/en not_active Expired - Lifetime
- 1999-02-17 NL NL1011324A patent/NL1011324C2/nl not_active IP Right Cessation
- 1999-02-17 DE DE19906582.9A patent/DE19906582B4/de not_active Expired - Lifetime
- 1999-02-18 KR KR1019990005392A patent/KR100307681B1/ko not_active IP Right Cessation
- 1999-02-23 CN CN99102459A patent/CN1089324C/zh not_active Expired - Lifetime
- 1999-02-23 CN CNB021051526A patent/CN1305087C/zh not_active Expired - Lifetime
-
2001
- 2001-02-02 US US09/776,402 patent/US6411495B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1305087C (zh) | 2007-03-14 |
KR100307681B1 (ko) | 2001-09-24 |
CN1396607A (zh) | 2003-02-12 |
DE19906582B4 (de) | 2014-05-08 |
US20010036896A1 (en) | 2001-11-01 |
DE19906582A1 (de) | 1999-09-23 |
US6225250B1 (en) | 2001-05-01 |
US6411495B2 (en) | 2002-06-25 |
CN1089324C (zh) | 2002-08-21 |
TW434600B (en) | 2001-05-16 |
CN1226538A (zh) | 1999-08-25 |
KR19990072723A (ko) | 1999-09-27 |
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Legal Events
Date | Code | Title | Description |
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MK | Patent expired because of reaching the maximum lifetime of a patent |
Effective date: 20190216 |