NL1007599A1 - Nieuw amide- of imide-bevattend copolymeer, de bereiding daarvan en een fotoresist die het omvat. - Google Patents

Nieuw amide- of imide-bevattend copolymeer, de bereiding daarvan en een fotoresist die het omvat.

Info

Publication number
NL1007599A1
NL1007599A1 NL1007599A NL1007599A NL1007599A1 NL 1007599 A1 NL1007599 A1 NL 1007599A1 NL 1007599 A NL1007599 A NL 1007599A NL 1007599 A NL1007599 A NL 1007599A NL 1007599 A1 NL1007599 A1 NL 1007599A1
Authority
NL
Netherlands
Prior art keywords
imide
photoresist
preparation
containing copolymer
novel amide
Prior art date
Application number
NL1007599A
Other languages
English (en)
Other versions
NL1007599C2 (nl
Inventor
Jae Chang Jung
Chi Hyeong Roh
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of NL1007599A1 publication Critical patent/NL1007599A1/nl
Application granted granted Critical
Publication of NL1007599C2 publication Critical patent/NL1007599C2/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/02—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings
    • C08F232/04—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings having one carbon-to-carbon double bond
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
NL1007599A 1996-12-31 1997-11-21 Nieuw amide- of imide-bevattend copolymeer, de bereiding daarvan en een fotoresist die het omvat. NL1007599C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR19960080265 1996-12-31
KR1019960080265A KR100220953B1 (ko) 1996-12-31 1996-12-31 아미드 또는 이미드를 도입한 ArF 감광막 수지

Publications (2)

Publication Number Publication Date
NL1007599A1 true NL1007599A1 (nl) 1998-07-01
NL1007599C2 NL1007599C2 (nl) 1998-11-17

Family

ID=19493516

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1007599A NL1007599C2 (nl) 1996-12-31 1997-11-21 Nieuw amide- of imide-bevattend copolymeer, de bereiding daarvan en een fotoresist die het omvat.

Country Status (9)

Country Link
US (1) US6316565B1 (nl)
JP (1) JP3107770B2 (nl)
KR (1) KR100220953B1 (nl)
CN (1) CN1088070C (nl)
DE (1) DE19753276B4 (nl)
FR (1) FR2757867B1 (nl)
GB (1) GB2320717B (nl)
NL (1) NL1007599C2 (nl)
TW (1) TW460750B (nl)

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KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
US6808859B1 (en) * 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
KR100225956B1 (ko) * 1997-01-10 1999-10-15 김영환 아민을 도입한 에이알에프 감광막 수지
KR100321080B1 (ko) 1997-12-29 2002-11-22 주식회사 하이닉스반도체 공중합체수지와이의제조방법및이수지를이용한포토레지스트
KR100520148B1 (ko) 1997-12-31 2006-05-12 주식회사 하이닉스반도체 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물
KR100376983B1 (ko) * 1998-04-30 2003-08-02 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR19990081722A (ko) 1998-04-30 1999-11-15 김영환 카르복실기 함유 지환족 유도체 및 그의 제조방법
KR100376984B1 (ko) * 1998-04-30 2003-07-16 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR100403325B1 (ko) 1998-07-27 2004-03-24 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한포토레지스트조성물
KR20000015014A (ko) 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
JP3587743B2 (ja) 1998-08-26 2004-11-10 株式会社ハイニックスセミコンダクター フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
US6569971B2 (en) 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
KR100400293B1 (ko) * 1998-11-27 2004-03-22 주식회사 하이닉스반도체 포토레지스트단량체,그의중합체및이를이용한포토레지스트조성물
KR20000056355A (ko) * 1999-02-19 2000-09-15 김영환 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물
KR100445920B1 (ko) * 1999-03-11 2004-08-25 인터내셔널 비지네스 머신즈 코포레이션 환형 올레핀 중합체 및 첨가제를 갖는 포토레지스트 조성물
KR100647379B1 (ko) * 1999-07-30 2006-11-17 주식회사 하이닉스반도체 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR100647380B1 (ko) * 1999-07-30 2006-11-17 주식회사 하이닉스반도체 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR100504290B1 (ko) * 2001-01-12 2005-07-27 삼성전자주식회사 포토레지스트용 옥소옥사알카노노르보넨 함유 공중합체 및그를 포함하는 포토레지스트 조성물
AU2002255786A1 (en) * 2001-02-25 2002-09-12 Shipley Company, L.L.C. Novel polymers and photoresist compositions comprising same
US6858371B2 (en) * 2001-04-13 2005-02-22 Hynix Semiconductor Inc. Maleimide-photoresist monomers containing halogen, polymers thereof and photoresist compositions comprising the same
KR100451643B1 (ko) * 2001-04-21 2004-10-08 삼성전자주식회사 아세탈기를 포함하는 포토레지스트용 노르보넨 공중합체,그의 제조방법 및 그를 포함하는 포토레지스트 조성물
KR100557556B1 (ko) 2001-10-25 2006-03-03 주식회사 하이닉스반도체 산 확산 방지용 포토레지스트 첨가제 및 이를 함유하는포토레지스트 조성물
JP2006096965A (ja) 2004-02-20 2006-04-13 Tokyo Ohka Kogyo Co Ltd 高分子化合物、該高分子化合物を含有するフォトレジスト組成物、およびレジストパターン形成方法
US6969570B1 (en) * 2004-10-26 2005-11-29 Kodak Polychrome Graphics, Llc Solvent resistant imageable element
JP4724843B2 (ja) * 2005-07-08 2011-07-13 東ソー株式会社 マレイミド系重合体
KR100731327B1 (ko) 2005-12-22 2007-06-25 주식회사 삼양이엠에스 음성 포토레지스트 조성물
US9603848B2 (en) 2007-06-08 2017-03-28 Senomyx, Inc. Modulation of chemosensory receptors and ligands associated therewith
US7928111B2 (en) 2007-06-08 2011-04-19 Senomyx, Inc. Compounds including substituted thienopyrimidinone derivatives as ligands for modulating chemosensory receptors
CA2731800C (en) 2008-07-31 2018-03-20 Senomyx, Inc. Processes and intermediates for making sweet taste enhancers
MX354835B (es) 2012-08-06 2018-03-21 Senomyx Inc Modificador del sabor dulce.
JO3155B1 (ar) 2013-02-19 2017-09-20 Senomyx Inc معدِّل نكهة حلوة
JP6558479B2 (ja) * 2018-07-18 2019-08-14 住友ベークライト株式会社 ポリマー、および感光性樹脂組成物
MX2021001193A (es) 2018-08-07 2021-04-28 Firmenich Incorporated 2,2-dioxidos de 4-amino-1h-benzo[c][1,2,6]tiadiazina 5-sustituidos y formulaciones y usos de los mismos.

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Also Published As

Publication number Publication date
KR100220953B1 (ko) 1999-10-01
TW460750B (en) 2001-10-21
GB2320717B (en) 2000-09-13
CN1088070C (zh) 2002-07-24
US6316565B1 (en) 2001-11-13
CN1187496A (zh) 1998-07-15
DE19753276A1 (de) 1998-07-02
GB9711806D0 (en) 1997-08-06
FR2757867A1 (fr) 1998-07-03
FR2757867B1 (fr) 2003-04-11
GB2320717A (en) 1998-07-01
DE19753276B4 (de) 2005-11-17
JPH10198035A (ja) 1998-07-31
JP3107770B2 (ja) 2000-11-13
KR19980060897A (ko) 1998-10-07
NL1007599C2 (nl) 1998-11-17

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RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Free format text: 980917;980917

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V1 Lapsed because of non-payment of the annual fee

Effective date: 20140601