MY160675A - Composition and method for polishing polysilicon - Google Patents

Composition and method for polishing polysilicon

Info

Publication number
MY160675A
MY160675A MYPI2013001712A MYPI2013001712A MY160675A MY 160675 A MY160675 A MY 160675A MY PI2013001712 A MYPI2013001712 A MY PI2013001712A MY PI2013001712 A MYPI2013001712 A MY PI2013001712A MY 160675 A MY160675 A MY 160675A
Authority
MY
Malaysia
Prior art keywords
composition
polishing
polishing composition
polishing polysilicon
polysilicon
Prior art date
Application number
MYPI2013001712A
Other languages
English (en)
Inventor
Reiss Brian
P Johns Timothy
White Michael
Jones Lamon
Clark John
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of MY160675A publication Critical patent/MY160675A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
MYPI2013001712A 2010-12-17 2011-12-16 Composition and method for polishing polysilicon MY160675A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/971,714 US8697576B2 (en) 2009-09-16 2010-12-17 Composition and method for polishing polysilicon

Publications (1)

Publication Number Publication Date
MY160675A true MY160675A (en) 2017-03-15

Family

ID=46245381

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2013001712A MY160675A (en) 2010-12-17 2011-12-16 Composition and method for polishing polysilicon

Country Status (10)

Country Link
US (2) US8697576B2 (enExample)
EP (1) EP2652063B1 (enExample)
JP (1) JP6010043B2 (enExample)
KR (1) KR101666706B1 (enExample)
CN (1) CN103261358B (enExample)
IL (1) IL226558A (enExample)
MY (1) MY160675A (enExample)
SG (1) SG190703A1 (enExample)
TW (1) TWI432540B (enExample)
WO (1) WO2012083115A2 (enExample)

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JP7602366B2 (ja) * 2020-12-22 2024-12-18 株式会社フジミインコーポレーテッド 研磨用組成物
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Also Published As

Publication number Publication date
CN103261358B (zh) 2014-12-10
EP2652063B1 (en) 2020-03-11
US20110136344A1 (en) 2011-06-09
SG190703A1 (en) 2013-07-31
WO2012083115A3 (en) 2013-01-17
JP6010043B2 (ja) 2016-10-19
WO2012083115A2 (en) 2012-06-21
US8697576B2 (en) 2014-04-15
EP2652063A2 (en) 2013-10-23
KR101666706B1 (ko) 2016-10-17
CN103261358A (zh) 2013-08-21
KR20140003475A (ko) 2014-01-09
JP2014505358A (ja) 2014-02-27
TW201241121A (en) 2012-10-16
US20140191155A1 (en) 2014-07-10
TWI432540B (zh) 2014-04-01
EP2652063A4 (en) 2017-07-05
IL226558A (en) 2016-08-31

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