MX2019009532A - Dispositivo semiconductor y metodo de fabricacion del mismo. - Google Patents

Dispositivo semiconductor y metodo de fabricacion del mismo.

Info

Publication number
MX2019009532A
MX2019009532A MX2019009532A MX2019009532A MX2019009532A MX 2019009532 A MX2019009532 A MX 2019009532A MX 2019009532 A MX2019009532 A MX 2019009532A MX 2019009532 A MX2019009532 A MX 2019009532A MX 2019009532 A MX2019009532 A MX 2019009532A
Authority
MX
Mexico
Prior art keywords
region
conduction type
semiconductor device
electric conduction
drift region
Prior art date
Application number
MX2019009532A
Other languages
English (en)
Inventor
Hayashi Tetsuya
Ni Wei
Hayami Yasuaki
Tanaka Ryota
Takemoto Keisuke
Original Assignee
Nissan Motor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor filed Critical Nissan Motor
Publication of MX2019009532A publication Critical patent/MX2019009532A/es

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Abstract

Se incluyen una primera región (4) de deriva del primer tipo de conductividad formada en una primera superficie principal de un sustrato (1), y una segunda región (41) de deriva del primer tipo de conductividad formada en la primera superficie principal del sustrato (1), la segunda región de deriva formada para llegar a una posición más profunda del sustrato (1) que una posición de la primera región (4) de deriva. Se incluyen adicionalmente una región de pozo del segundo tipo de conductividad en contacto con la segunda región de deriva, una región de fuente del primer tipo de conductividad formada para extenderse en una dirección perpendicular a una superficie de la región de pozo, y una región de drenaje del primer tipo de conductividad separada de la región de pozo, la región de drenaje formada para extenderse en una dirección perpendicular a una superficie de la primera región de deriva. Debido a que una trayectoria de flujo de los electrones después de pasar a través de un canal puede ser ensanchada, una resistencia puede ser reducida.
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