KR970707620A - 반도체 레이저소자 - Google Patents

반도체 레이저소자

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KR970707620A
KR970707620A KR1019970702436A KR19970702436A KR970707620A KR 970707620 A KR970707620 A KR 970707620A KR 1019970702436 A KR1019970702436 A KR 1019970702436A KR 19970702436 A KR19970702436 A KR 19970702436A KR 970707620 A KR970707620 A KR 970707620A
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layer
refractive index
semiconductor laser
laser device
waveguide
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아쓰시 오꾸보
요시까즈 야마다
쓰요시 후지모토
사토루 오까다
유미 나이토
끼요후미 무로
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고다 시게노리
미쓰이세키유 가가쿠고교 가부시끼가이샤
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223Buried stripe structure
    • H01S5/2238Buried stripe structure with a terraced structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223Buried stripe structure
    • H01S5/2231Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204Strongly index guided structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60Receivers
    • H04B10/66Non-coherent receivers, e.g. using direct detection
    • H04B10/67Optical arrangements in the receiver

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

제1도에 나타낸 바와 같이 n-GaAs로 된 버퍼층(32)상에 n-AlGaAs로 클랫층(31), 도파층(30), 캐리어 블록층(29), 비도포 AlGaAs로된 사이드 배리어층(28), 비도포 GaAs로된 2개의 양자우물층과 AlGaAs로된 배리어층으로 구성된 활성층(27), 비도포 AlGaAs로된 사이드 배리어층(26), p-AlGaAs로된 캐리어블록층(25), 도파층(23), 클랫층(22), 및 p-GaAs로된 캡층(21)이 순차적으로 형성되어 있다. 도파층(23) 내부에는 도파층(23)보다 Al조성을 올려서 저굴절률로 한 전류협착층(24)이 스트라이프형상의 활성영역(34)을 끼우도록 형성되어 있다. 이에 따라 활성영역(34)과 전류협착층(24)이 존재하는 매입영역(33)사이에 굴절률을 만들어서 굴절률도파 구조를 형성하고 있다. 이렇게 하여 고출력이며 제조가 용이한 굴절률도파형의 반도체 레이저소가 얻어진다.

Description

반도체 레이저소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1(a)도는 본 발명에 관한 굴절률도파형 반도체레이저를 나타낸 구조도이며, 제1(b)도는 그 도파모드를 나타낸 그래프이다. 제5도는 본 발명에 관한 반도체 레이저소자의 제조방법을 설명한 공정도이다. 제6도는 본 발명이 적용 가능한 리지형 굴절률도파형 반도체 레이저의 일례를 나타낸 구조도이다.

Claims (16)

  1. 활성층과, 활성층의 양측에 형성되어, 도파층보다 큰 에너지 갭을 갖는 캐리어블록층과, 캐리어블록층에 대해 활성층과 반대측에 형성된 도파층과, 도파층에 대해 활성층과 반대측에 형성되어, 도파층보다 낮은 굴절률을 갖는 클랫층을 갖추며, 도파층보다 낮은 굴절률을 갖는 전류협착층이 스트라이프형상의 활성영역을 끼우도록 형성되고, 이 활성영역과 전류협착층이 존재하는 매입영역 사이에 굴절률차를 만들어서 굴절률도파 구조를 형성한 것을 특징으로 하는 반도체 레이저소자.
  2. 제1항에 있어서, 활성층에 대해 전류협착층과는 반대측의 가장 실효굴절률을 전류협착층측의 가상 실효굴절률보다 낮은 구조로 한 것을 특징으로 하는 반도체 레이저소자.
  3. 제2항에 있어서, 활성층에 대해 전류협착층과는 반대측의 클랫층의 굴절률을 저하시켜서 가상 실효굴절률을 내린 것을 특징으로 하는 반도체 레이저소자.
  4. 제2항에 있어서, 활성층에 대해 전류협착층과는 반대측의 도파층의 굴절률을 저하시켜서 가상 실효굴절률을 내린 것을 특징으로 하는 반도체 레이저소자.
  5. 제2항에 있어서, 활성층에 대해 전류협착층과는 반대측의 도파층의 두께를 전류협착층의 도파층 두께보다 적게 하여서 가상 실효굴절률을 내린 것을 특징으로 하는 반도체 레이저소자.
  6. 제1항 또는 제2항에 있어서, 전류협착층은 클랫층에 대해 인접하도록 도파층내에 형성된 것을 특징으로 하는 반도체 레이저소자.
  7. 제1항 또는 제2항에 있어서, 전류협착층은 클랫층에 대해 이간하도록 도파층내에 형성한 것을 특징으로 하는 반도체 레이저소자.
  8. 제1항∼제7항중의 어느 1항에 있어서, π를 원주율, 도파층의 굴절률을 No., 클랫층의 굴절률을 N3, 클랫층간의 실효두께을 de, 반도체 레이저의 발진파장을 λ라 하고, 규격화 주파수 Ve를 Ve=(π·de/λ)·(No.2-N3 2)0.5로 정의했을 때, Ve〉π/3이 되는 것을 특징으로 하는 반도체 레이저소자.
  9. 제1항∼제8항중의 어느 1항에 있어서, π를 원주율, 도파층의 굴절률을 No., 캐리어블록층의 굴절률 및 두께를 N2및 d2, 클랫층의 굴절률을 N3, 활성층, 배리어층, 사이드 배리어층, 및 캐리어블록층을 포함한 도파층의 두께를 d3로 하여, V1=(π·d2/λ)·(No.2-N3 2)0.5V2=((π·d|2/λ)·(No.2-N3 2)0.5로 정의했을 때, V1〈V|2/10이 되는 것을 특징으로 하는 반도체 레이저소자.
  10. 제1항∼제9항중의 어느 1항에 있어서, 활성층의 굴절률 및 두께를 N1및 d1로 하고, Vo를 Vo=(π·d1/λ)·(Nw 2-No.2)|0.5활성층이 m층이된 양장우물인 경우에는, 양자우물층의 굴절률 및 두께를 Nw및 dw로 하여, Vo=(m·π·dw/λ)·(N|w 2-No.2)0.5로 정의했을 때, (Vo/3)〈V1〈Vo이 되는 것을 특징으로 하는 반도체 레이저소자.
  11. 제1항∼제10항중의 어느 1항에 있어서, 캐리어블록층의 두께를 d2(단위 옹그스트롬), 도파층과 캐리어 블록층간의 에너지 갭차를 E(단위eVo단 에너지 갭에 분포가 있을 경우에는 최소치를 채용한다)로 하였을 때, E>2.5×103/d2 2이 되는 것을 특징으로 하는 반도체 레이저소자.
  12. 제1항∼제11항중의 어느 1항에 있어서, 전류협착층이 매입에 의해 활성영역과 매입영역간의 실효굴절률차 △Neff는 △Neff≥0.001이 되는 것을 특징으로 하는 반도체 레이저소자.
  13. 제1항∼제12항중의 어느 1항에 있어서, 전류협착층은 AlxGa-1xAs로 되고, 이 때의 X는 0.0∼0.7의 범위내인 것을 특징으로 하는 반도체 레이저소자.
  14. 제1항∼제12항중의 어느 1항에 있어서, 캐리어블록층은 AlxGa-1xAs로 되고, 이 때의 X는 0.0∼0.7의 범위내인 것을 특징으로 하는 반도체 레이저소자.
  15. 제1항∼제12항중의 어느 1항에 있어서, 도파층은 GaAs로된 반도체 레이저소자.
  16. 제1항∼제12항중의 어느 1항에 있어서, 활성층은 InxGa1-xAs로 된 반도체 레이저소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970702436A 1994-10-18 1995-10-16 반도체레이저소자 KR100309952B1 (ko)

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JP252431 1994-10-18
JP94-252431 1994-10-18
JP25243194 1994-10-18
JP328766 1994-12-28
JP94-328766 1994-12-28
JP32876694 1994-12-28
PCT/JP1995/002118 WO1996012328A1 (fr) 1994-10-18 1995-10-16 Laser a semi-conducteur

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DE69517044T2 (de) 2000-10-26
DE69517044D1 (de) 2000-06-21
EP0788203A4 (en) 1997-12-10
EP0788203A1 (en) 1997-08-06
US6118799A (en) 2000-09-12
CA2203117C (en) 2001-12-25
JP3576560B2 (ja) 2004-10-13
CA2203117A1 (en) 1996-04-25
EP0788203B1 (en) 2000-05-17
KR100309952B1 (ko) 2001-12-17
WO1996012328A1 (fr) 1996-04-25

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