KR970707620A - 반도체 레이저소자 - Google Patents

반도체 레이저소자

Info

Publication number
KR970707620A
KR970707620A KR1019970702436A KR19970702436A KR970707620A KR 970707620 A KR970707620 A KR 970707620A KR 1019970702436 A KR1019970702436 A KR 1019970702436A KR 19970702436 A KR19970702436 A KR 19970702436A KR 970707620 A KR970707620 A KR 970707620A
Authority
KR
South Korea
Prior art keywords
layer
refractive index
semiconductor laser
laser device
waveguide
Prior art date
Application number
KR1019970702436A
Other languages
English (en)
Other versions
KR100309952B1 (ko
Inventor
아쓰시 오꾸보
요시까즈 야마다
쓰요시 후지모토
사토루 오까다
유미 나이토
끼요후미 무로
Original Assignee
고다 시게노리
미쓰이세키유 가가쿠고교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고다 시게노리, 미쓰이세키유 가가쿠고교 가부시끼가이샤 filed Critical 고다 시게노리
Publication of KR970707620A publication Critical patent/KR970707620A/ko
Application granted granted Critical
Publication of KR100309952B1 publication Critical patent/KR100309952B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/67—Optical arrangements in the receiver

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

제1도에 나타낸 바와 같이 n-GaAs로 된 버퍼층(32)상에 n-AlGaAs로 클랫층(31), 도파층(30), 캐리어 블록층(29), 비도포 AlGaAs로된 사이드 배리어층(28), 비도포 GaAs로된 2개의 양자우물층과 AlGaAs로된 배리어층으로 구성된 활성층(27), 비도포 AlGaAs로된 사이드 배리어층(26), p-AlGaAs로된 캐리어블록층(25), 도파층(23), 클랫층(22), 및 p-GaAs로된 캡층(21)이 순차적으로 형성되어 있다. 도파층(23) 내부에는 도파층(23)보다 Al조성을 올려서 저굴절률로 한 전류협착층(24)이 스트라이프형상의 활성영역(34)을 끼우도록 형성되어 있다. 이에 따라 활성영역(34)과 전류협착층(24)이 존재하는 매입영역(33)사이에 굴절률을 만들어서 굴절률도파 구조를 형성하고 있다. 이렇게 하여 고출력이며 제조가 용이한 굴절률도파형의 반도체 레이저소가 얻어진다.

Description

반도체 레이저소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1(a)도는 본 발명에 관한 굴절률도파형 반도체레이저를 나타낸 구조도이며, 제1(b)도는 그 도파모드를 나타낸 그래프이다. 제5도는 본 발명에 관한 반도체 레이저소자의 제조방법을 설명한 공정도이다. 제6도는 본 발명이 적용 가능한 리지형 굴절률도파형 반도체 레이저의 일례를 나타낸 구조도이다.

Claims (16)

  1. 활성층과, 활성층의 양측에 형성되어, 도파층보다 큰 에너지 갭을 갖는 캐리어블록층과, 캐리어블록층에 대해 활성층과 반대측에 형성된 도파층과, 도파층에 대해 활성층과 반대측에 형성되어, 도파층보다 낮은 굴절률을 갖는 클랫층을 갖추며, 도파층보다 낮은 굴절률을 갖는 전류협착층이 스트라이프형상의 활성영역을 끼우도록 형성되고, 이 활성영역과 전류협착층이 존재하는 매입영역 사이에 굴절률차를 만들어서 굴절률도파 구조를 형성한 것을 특징으로 하는 반도체 레이저소자.
  2. 제1항에 있어서, 활성층에 대해 전류협착층과는 반대측의 가장 실효굴절률을 전류협착층측의 가상 실효굴절률보다 낮은 구조로 한 것을 특징으로 하는 반도체 레이저소자.
  3. 제2항에 있어서, 활성층에 대해 전류협착층과는 반대측의 클랫층의 굴절률을 저하시켜서 가상 실효굴절률을 내린 것을 특징으로 하는 반도체 레이저소자.
  4. 제2항에 있어서, 활성층에 대해 전류협착층과는 반대측의 도파층의 굴절률을 저하시켜서 가상 실효굴절률을 내린 것을 특징으로 하는 반도체 레이저소자.
  5. 제2항에 있어서, 활성층에 대해 전류협착층과는 반대측의 도파층의 두께를 전류협착층의 도파층 두께보다 적게 하여서 가상 실효굴절률을 내린 것을 특징으로 하는 반도체 레이저소자.
  6. 제1항 또는 제2항에 있어서, 전류협착층은 클랫층에 대해 인접하도록 도파층내에 형성된 것을 특징으로 하는 반도체 레이저소자.
  7. 제1항 또는 제2항에 있어서, 전류협착층은 클랫층에 대해 이간하도록 도파층내에 형성한 것을 특징으로 하는 반도체 레이저소자.
  8. 제1항∼제7항중의 어느 1항에 있어서, π를 원주율, 도파층의 굴절률을 No., 클랫층의 굴절률을 N3, 클랫층간의 실효두께을 de, 반도체 레이저의 발진파장을 λ라 하고, 규격화 주파수 Ve를 Ve=(π·de/λ)·(No.2-N3 2)0.5로 정의했을 때, Ve〉π/3이 되는 것을 특징으로 하는 반도체 레이저소자.
  9. 제1항∼제8항중의 어느 1항에 있어서, π를 원주율, 도파층의 굴절률을 No., 캐리어블록층의 굴절률 및 두께를 N2및 d2, 클랫층의 굴절률을 N3, 활성층, 배리어층, 사이드 배리어층, 및 캐리어블록층을 포함한 도파층의 두께를 d3로 하여, V1=(π·d2/λ)·(No.2-N3 2)0.5V2=((π·d|2/λ)·(No.2-N3 2)0.5로 정의했을 때, V1〈V|2/10이 되는 것을 특징으로 하는 반도체 레이저소자.
  10. 제1항∼제9항중의 어느 1항에 있어서, 활성층의 굴절률 및 두께를 N1및 d1로 하고, Vo를 Vo=(π·d1/λ)·(Nw 2-No.2)|0.5활성층이 m층이된 양장우물인 경우에는, 양자우물층의 굴절률 및 두께를 Nw및 dw로 하여, Vo=(m·π·dw/λ)·(N|w 2-No.2)0.5로 정의했을 때, (Vo/3)〈V1〈Vo이 되는 것을 특징으로 하는 반도체 레이저소자.
  11. 제1항∼제10항중의 어느 1항에 있어서, 캐리어블록층의 두께를 d2(단위 옹그스트롬), 도파층과 캐리어 블록층간의 에너지 갭차를 E(단위eVo단 에너지 갭에 분포가 있을 경우에는 최소치를 채용한다)로 하였을 때, E＞2.5×103/d2 2이 되는 것을 특징으로 하는 반도체 레이저소자.
  12. 제1항∼제11항중의 어느 1항에 있어서, 전류협착층이 매입에 의해 활성영역과 매입영역간의 실효굴절률차 △Neff는 △Neff≥0.001이 되는 것을 특징으로 하는 반도체 레이저소자.
  13. 제1항∼제12항중의 어느 1항에 있어서, 전류협착층은 AlxGa-1xAs로 되고, 이 때의 X는 0.0∼0.7의 범위내인 것을 특징으로 하는 반도체 레이저소자.
  14. 제1항∼제12항중의 어느 1항에 있어서, 캐리어블록층은 AlxGa-1xAs로 되고, 이 때의 X는 0.0∼0.7의 범위내인 것을 특징으로 하는 반도체 레이저소자.
  15. 제1항∼제12항중의 어느 1항에 있어서, 도파층은 GaAs로된 반도체 레이저소자.
  16. 제1항∼제12항중의 어느 1항에 있어서, 활성층은 InxGa1-xAs로 된 반도체 레이저소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970702436A 1994-10-18 1995-10-16 반도체레이저소자 KR100309952B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP94-252431 1994-10-18
JP252431 1994-10-18
JP25243194 1994-10-18
JP328766 1994-12-28
JP32876694 1994-12-28
JP94-328766 1994-12-28
PCT/JP1995/002118 WO1996012328A1 (fr) 1994-10-18 1995-10-16 Laser a semi-conducteur

Publications (2)

Publication Number Publication Date
KR970707620A true KR970707620A (ko) 1997-12-01
KR100309952B1 KR100309952B1 (ko) 2001-12-17

Family

ID=26540714

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970702436A KR100309952B1 (ko) 1994-10-18 1995-10-16 반도체레이저소자

Country Status (7)

Country Link
US (1) US6118799A (ko)
EP (1) EP0788203B1 (ko)
JP (1) JP3576560B2 (ko)
KR (1) KR100309952B1 (ko)
CA (1) CA2203117C (ko)
DE (1) DE69517044T2 (ko)
WO (1) WO1996012328A1 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2246975A1 (en) 1997-09-18 1999-03-18 Mitsui Chemicals, Incorporated Method of fabricating semiconductor laser
JP3859839B2 (ja) * 1997-09-30 2006-12-20 富士フイルムホールディングス株式会社 屈折率導波型半導体レーザ装置
JPH11163458A (ja) * 1997-11-26 1999-06-18 Mitsui Chem Inc 半導体レーザ装置
JPH11243259A (ja) * 1997-12-25 1999-09-07 Denso Corp 半導体レーザおよび半導体レーザの駆動方法
US6487225B2 (en) * 1998-02-04 2002-11-26 Mitsui Chemicals Inc. Surface-emitting laser device
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
JP2001210910A (ja) * 1999-11-17 2001-08-03 Mitsubishi Electric Corp 半導体レーザ
US6597717B1 (en) * 1999-11-19 2003-07-22 Xerox Corporation Structure and method for index-guided, inner stripe laser diode structure
JP2002314203A (ja) * 2001-04-12 2002-10-25 Pioneer Electronic Corp ３族窒化物半導体レーザ及びその製造方法
JP3797151B2 (ja) * 2001-07-05 2006-07-12 ソニー株式会社 レーザダイオード、光学ピックアップ装置、光ディスク装置および光通信装置
JP4204982B2 (ja) * 2002-04-04 2009-01-07 シャープ株式会社 半導体レーザ素子
TWI373894B (en) 2003-06-27 2012-10-01 Nichia Corp Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
EP2015412B1 (en) * 2007-07-06 2022-03-09 Lumentum Operations LLC Semiconductor laser with narrow beam divergence.
EP2346124B1 (en) * 2008-10-31 2018-09-19 Optoenergy, Inc. Semiconductor laser element
WO2018003551A1 (ja) * 2016-06-30 2018-01-04 パナソニックＩｐマネジメント株式会社 半導体レーザ装置、半導体レーザモジュール及び溶接用レーザ光源システム

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123191A (en) * 1979-03-16 1980-09-22 Fujitsu Ltd Semiconductor light emitting device
EP0014588B1 (en) * 1979-02-13 1983-12-14 Fujitsu Limited A semiconductor light emitting device
JPS6014482A (ja) * 1983-07-04 1985-01-25 Toshiba Corp 半導体レ−ザ装置
JPH0636456B2 (ja) * 1984-05-18 1994-05-11 シャープ株式会社 半導体レ−ザ素子
JPS6232678A (ja) * 1985-08-05 1987-02-12 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS62188393A (ja) * 1986-02-14 1987-08-17 Nec Corp 半導体レ−ザ
JPH01175284A (ja) * 1987-12-29 1989-07-11 Sharp Corp 半導体レーザ素子
JPH069282B2 (ja) * 1988-09-09 1994-02-02 株式会社東芝 半導体レーザ装置
US5149318A (en) * 1990-03-14 1992-09-22 Minnesota Mining And Manufacturing Company Quick-changeover blood handling apparatus
JPH03276785A (ja) * 1990-03-27 1991-12-06 Sony Corp 半導体レーザ
JPH04180684A (ja) * 1990-11-15 1992-06-26 Nec Corp 半導体レーザ
JPH0563293A (ja) * 1991-08-30 1993-03-12 Sharp Corp ＡｌＧａＩｎＰ系半導体レーザ素子およびその製造方法
JP2912482B2 (ja) * 1991-08-30 1999-06-28 シャープ株式会社 半導体レーザ
DE69324733T2 (de) * 1992-02-05 1999-10-07 Mitsui Chemicals, Inc. Halbleiterlaserelement und damit hergestellter laser
US5467364A (en) * 1992-02-05 1995-11-14 Mitsui Petrochemical Industries, Ltd. Semiconductor laser element and laser device using the same element
EP0575684A1 (en) * 1992-06-22 1993-12-29 International Business Machines Corporation Decoupled optic and electronic confinement laser diode
US5369658A (en) * 1992-06-26 1994-11-29 Rohm Co., Ltd. Semiconductor laser
JPH0636456A (ja) * 1992-07-15 1994-02-10 Sony Corp 画像データ再生装置
JPH0697572A (ja) * 1992-09-14 1994-04-08 Hitachi Ltd 半導体レーザ素子
JPH06181362A (ja) * 1992-12-14 1994-06-28 Canon Inc 半導体装置及び半導体装置の製造方法
US5301202A (en) * 1993-02-25 1994-04-05 International Business Machines, Corporation Semiconductor ridge waveguide laser with asymmetrical cladding

Also Published As

Publication number Publication date
EP0788203A4 (en) 1997-12-10
CA2203117A1 (en) 1996-04-25
DE69517044T2 (de) 2000-10-26
CA2203117C (en) 2001-12-25
US6118799A (en) 2000-09-12
EP0788203A1 (en) 1997-08-06
EP0788203B1 (en) 2000-05-17
DE69517044D1 (de) 2000-06-21
JP3576560B2 (ja) 2004-10-13
KR100309952B1 (ko) 2001-12-17
WO1996012328A1 (fr) 1996-04-25

Similar Documents

Publication Publication Date Title
US4745612A (en) Separate confinement heterostructure semiconductor laser device
CN1979241B (zh) 耦合在光波导中传播的光与衍射光栅的光学器件
KR970707620A (ko) 반도체 레이저소자
US7262435B2 (en) Single-transverse-mode laser diode with multi-mode waveguide region and manufacturing method of the same
US6717970B2 (en) Lasers
CN105720479A (zh) 一种具有光束扩散结构的高速半导体激光器
US20030219053A1 (en) Index guided laser structure
JPH0118591B2 (ko)
US6788725B2 (en) Semiconductor laser device
JP3522107B2 (ja) 半導体レーザ
JPS59119783A (ja) 半導体発光装置
JPS63228795A (ja) 分布帰還型半導体レ−ザ
US20050025210A1 (en) Semiconductor laser device
JP3595677B2 (ja) 光アイソレータ、分布帰還型レーザ及び光集積素子
US5448584A (en) Semiconductor laser for use as light source in data processing device with cladding layers having a bandgap twice as large as the active layer
JPH09246664A (ja) 半導体レーザ
JPS6297386A (ja) 分布帰還型双安定半導体レ−ザ
JPH08316566A (ja) 半導体レーザ素子
JP2687404B2 (ja) 分布帰還形半導対レーザ
JPH07106694A (ja) 半導体レーザー
JPH01230279A (ja) 半導体レーザ装置
JPH04226094A (ja) 半導体レーザ素子
JPH09107156A (ja) 半導体レーザ
JPS58199586A (ja) 半導体レ−ザ
JPH07111363A (ja) 半導体レーザ装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20110811

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20120821

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee