KR970702504A - 볼록 초미립자면 구조 - Google Patents

볼록 초미립자면 구조

Info

Publication number
KR970702504A
KR970702504A KR1019960705880A KR19960705880A KR970702504A KR 970702504 A KR970702504 A KR 970702504A KR 1019960705880 A KR1019960705880 A KR 1019960705880A KR 19960705880 A KR19960705880 A KR 19960705880A KR 970702504 A KR970702504 A KR 970702504A
Authority
KR
South Korea
Prior art keywords
light
convex
refractive index
fine
transfer
Prior art date
Application number
KR1019960705880A
Other languages
English (en)
Inventor
고타로 오노
겐지 스미다
Original Assignee
고타로 오노
와시 고산 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7029222A external-priority patent/JPH08221828A/ja
Priority claimed from JP07261195A external-priority patent/JP3408354B2/ja
Priority claimed from JP11854595A external-priority patent/JPH08314064A/ja
Priority claimed from JP22351695A external-priority patent/JP4030601B2/ja
Priority claimed from JP2235096A external-priority patent/JPH09211842A/ja
Application filed by 고타로 오노, 와시 고산 가부시키가이샤 filed Critical 고타로 오노
Priority claimed from PCT/JP1996/000350 external-priority patent/WO1996025677A1/ja
Publication of KR970702504A publication Critical patent/KR970702504A/ko

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/113Anti-reflection coatings using inorganic layer materials only
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/12Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03CPHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00Photosensitive materials
    • G03C1/76Photosensitive materials characterised by the base or auxiliary layers
    • G03C1/825Photosensitive materials characterised by the base or auxiliary layers characterised by antireflection means or visible-light filtering means, e.g. antihalation
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582Record carriers characterised by the selection of the material or by the structure or form
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26Apparatus or processes specially adapted for the manufacture of record carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • H01L31/02366Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10584Record carriers characterised by the selection of the material or by the structure or form characterised by the form, e.g. comprising mechanical protection elements
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 렌즈, 태양전지의 채광면, 광디스크 등의 기록담체, 감광필름등의 감광체, 집적회로의 제조장치등에 있어서, 광반사를 경감하고, 또한 채광효과를 향상시키는 볼록 초미립자 면구조에 관한 것으로서, 렌즈 등의 표면 및/또한 계면에 볼록 초미립자면을 형성하는 방법으로, SiO2등에 의해 형성된 굴절율이 연속적으로 변화하는 볼록 초미립자면을 전사한 오목 초미립자면을 전사면으로 가지는 스탬퍼(108)를 이용하여 볼록 초미립자면을 복제하는 것을 특징으로 한다.

Description

볼록 초미립자면 구조
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 렌즈의 단면도.

Claims (25)

  1. 광반사의 경감 및/또는 채광효과의 향상을 위해 SiO2등에 의해 형성된 굴절율이 연속적으로 변화하는 볼록 초미립자면을 전사한 오목 미립자면을 전사면으로 갖는 스탬퍼를 이용하여 복제된 것을 특징으로 하는 볼록 초미립자면 구조.
  2. 청구항 제1항의 면구조를 채광면으로 이용한 것을 특징으로 하는 태양전지.
  3. 청구항 제1항의 면구조를 가지는 것을 특징으로 하는 기록담체.
  4. 청구항 제1항의 면구조를 가진 것을 특징으로 하는 필름, 판 등의 시트부재.
  5. 청구항 제1항의 면구조를 표면, 내부면 또는 계면에 가지는 것을 특징으로 하는 렌즈.
  6. 청구항 제1항의 면구조를 가지는 것을 특징으로 하는 감광 필름, 인화지 등의 감광체.
  7. 청구항 제1항의 상기 면구조를 광원으로부더 레지스트층에 도달하는 광로내에 배치된 복수의 수광면중 적어도 한 면 또는 상기 레지스트층의 표면에 이용한 장치에 의해 제조된 것을 특징으로 하는 집적회로.
  8. 수지렌즈의 표면, 이면 또는 제면중 적어도 한 면에 곡률반경이 15∼150nm인 미세한 오목면 및/또는 볼록면을 형성한 것을 특징으로 하는 안경용 렌즈.
  9. 미세한 오목면 및/또는 볼록면을 스탬퍼를 이용하여 전사 형성하는 것을 특징으로 하는 안경용 렌즈의 제조방법.
  10. 광반사의 경감 및/또는 채광효과의 향상을 위해, SiO2등에 의해 형성된 굴절율이 연속적으로 변화하는 초미립자면을 제1모형으로 한 전사면을 채광기구의 적어도 일부에 설치한 것을 특징으로 하는 태양전지.
  11. 굴절률이 연속적으로 변화하는 초미립자면을 모형으로 한 전사면과, 제2이하의 모형으로 한 전사면을 채광기구중 적어도 일부에 설치한 것을 특징으로 하는 태양진지.
  12. 상기 제1모형 또는 제2이하의 모형을 이용한 전사면에 광변환 소재를 정착시킨 것을 특징으로 하는 태양전지.
  13. 레이져 광선의 입사광 및/또는 그 반사광에 의해 판독할 수 있는 기록을 가진 담체위에 상기 광선의 입자광 및/또는 그 반사광의 파장에 해당하는 레이져 광선의 기록면으로의 도달 효율 및 기록면으로부터의 반사광의 도달효율을 높이기 위한 굴절율이 연속적으로 변화하는 초미립자층을 적어도 일부에 설치하여 이루어진 것을 특징으로 하는 기록담체.
  14. 제13항에 있어서, 초미립자가 SiO2인 것을 특징으로 하는 기록담체.
  15. 제13항에 있어서, 기록담체의 초미립자층을 전사하여 이루어진 층을 가지는 것을 특징으로 하는 기록담체.
  16. 제15항에 있어서, 기록담체의 초미립자층을 전사하여 얻어지는 미세한 오목부에, 이 오목부를 구성하는 물질의 굴절율 보다 작은 굴절율을 가지는 물질을 충전하는 것을 특징으로 하는 기록담체.
  17. 제13항에 있어서, 초미립자층을 전사하여 얻어지는 전사면을 모형으로 하여 반구형상의 미세한 볼록부를 설치하는 것을 특징으로 하는 기록담체.
  18. 초미립자층을 전사하여 얻어지는 전사면을 모형으로 하여 반구형상의 미세한 볼록부를 설치하는 것을 특징으로 하는 투명수지필름 또는 판.
  19. 반사를 경감하여 채광효율을 향상시키기 위해 SiO2등에 의해 형성된 굴절율이 연속적으로 변화하는 초미립자면을 제1모형으로 한 전사면을 빛이 투과하는 물질의 계면중 적어도 한 개의 계면에 형성한 것을 특징으로 하는 감광재료.
  20. 굴절율이 연속적으로 변화하는 초미립자면을 모형으로 한 전사면을 제2이하의 모형으로 한 전사면을 빛이 투과하는 물질의 층의 계면중 적어도 한 개의 계면에 형성한 것을 특징으로 하는 감광재료.
  21. 집적회로를 광학적수법에 의해 작성할 때, 베이스 표면에 구성하는 박막이나 레지스트 등으로 이루어진 적층면 및/또는 조사원으로부터 상기 적층면에 도달하는 광로내에 설치된 마스크, 렌즈 등의 광투과체중 적어도 한 면에 연속적으로 굴절율을 변화시킬 수 있는 15∼50nm의 깊이의 미세한 요철면을 스탬퍼 등의 전사수단을 이용하여 형성하고, 상기 적층면이나 상기 광투과체에서의 조사광이나 투과광의 반사율을 저감시키는 것을 특징으로 하는 제조방법.
  22. 연속적으로 굴절율을 변화시키는 15∼150nm 깊이의 미세한 요철면을 투영노광법을 수단으로 하여 형성하는 것을 특징으로 하는 제조방법.
  23. 청구항 제21항 또는 제22항의 방법을 이용하여 IC 또는 LSI등의 집적회로를 제조하는 것을 특징으로 하는 노광장치.
  24. 청구항 제21항 또는 제22항의 방법에 의해 제조된 것을 특징으로 하는 IC 또는 LSI등의 집적회로.
  25. 청구항 제24항의 집적회로를 이용한 젓을 특징으로 하는 칩.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960705880A 1995-02-17 1996-02-16 볼록 초미립자면 구조 KR970702504A (ko)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP7029222A JPH08221828A (ja) 1995-02-17 1995-02-17 低反射面を有する光記録担体
JP95-29222 1995-02-17
JP07261195A JP3408354B2 (ja) 1995-03-30 1995-03-30 太陽電池の製造方法
JP95-72611 1995-03-30
JP11854595A JPH08314064A (ja) 1995-05-17 1995-05-17 光反射防止機能を付与した写真用感光材料
JP95-118545 1995-05-17
JP95-223516 1995-08-31
JP22351695A JP4030601B2 (ja) 1995-08-31 1995-08-31 眼鏡用樹脂レンズの成形用スタンパ
JP2235096A JPH09211842A (ja) 1996-02-08 1996-02-08 光学的手段を用いた電子回路形成における光反射防止方法及びその装置とその製品
JP96-22350 1996-02-08
PCT/JP1996/000350 WO1996025677A1 (fr) 1995-02-17 1996-02-16 Structure de surface convexe d'un grain ultra-fin

Publications (1)

Publication Number Publication Date
KR970702504A true KR970702504A (ko) 1997-05-13

Family

ID=27520448

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960705880A KR970702504A (ko) 1995-02-17 1996-02-16 볼록 초미립자면 구조

Country Status (3)

Country Link
US (1) US6075652A (ko)
KR (1) KR970702504A (ko)
CN (1) CN1146810A (ko)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10039208A1 (de) * 2000-08-10 2002-04-18 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Werkzeugs, das zur Schaffung optisch wirksamer Oberflächenstrukturen im sub-mum Bereich einsetzbar ist, sowie ein diesbezügliches Werkzeug
US7018674B2 (en) * 2001-03-02 2006-03-28 Omron, Corporation Manufacturing methods and apparatuses of an optical device and a reflection plate provided with a resin thin film having a micro-asperity pattern
ATE317123T1 (de) * 2001-04-20 2006-02-15 Fuji Photo Film Co Ltd Reaktiver träger zur bestimmung von dna fragmenten
US6896398B2 (en) * 2001-04-27 2005-05-24 Ilight Technologies, Inc. Simulated neon illumination device using end-lit waveguide
CN100391011C (zh) * 2001-12-13 2008-05-28 旭硝子株式会社 用于太阳能电池的防护玻璃罩
US8322883B2 (en) 2003-02-04 2012-12-04 Ilight Technologies, Inc. Flexible illumination device for simulating neon lighting
US7119962B2 (en) * 2003-08-13 2006-10-10 Eastman Kodak Company Method of manufacturing a molded lenslet array
US7465075B2 (en) * 2005-03-21 2008-12-16 Visteon Global Technologies, Inc. Lens assembly for an automobile light assembly having LED light source
US7401948B2 (en) * 2005-10-17 2008-07-22 Visteon Global Technologies, Inc. Near field lens having reduced size
US7160010B1 (en) 2005-11-15 2007-01-09 Visteon Global Technologies, Inc. Light manifold for automotive light module
US7489453B2 (en) * 2005-11-15 2009-02-10 Visteon Global Technologies, Inc. Side emitting near field lens
US7564070B2 (en) * 2005-11-23 2009-07-21 Visteon Global Technologies, Inc. Light emitting diode device having a shield and/or filter
US7438454B2 (en) * 2005-11-29 2008-10-21 Visteon Global Technologies, Inc. Light assembly for automotive lighting applications
GB2435716A (en) * 2006-03-02 2007-09-05 Higher Way Electronic Co Ltd Package structure for a solar chip
AU2006200920B2 (en) * 2006-03-03 2009-09-10 Higher Way Electronic Co., Ltd. Packaging structure for a solar chip
US7701641B2 (en) * 2006-03-20 2010-04-20 Ophthonix, Inc. Materials and methods for producing lenses
US7554742B2 (en) * 2007-04-17 2009-06-30 Visteon Global Technologies, Inc. Lens assembly
US20080276990A1 (en) * 2007-05-10 2008-11-13 Board Of Regents, University Of Texas System Substrate surface structures and processes for forming the same
MY165985A (en) * 2007-11-05 2018-05-21 Dsm Ip Assets Bv Photovoltaic device
EP2139048A1 (en) * 2008-06-23 2009-12-30 Photon BV Photovoltaic device with improved spectral response
KR101617485B1 (ko) * 2008-12-05 2016-05-02 도판 인사츠 가부시키가이샤 광학 부품, 조명 장치 및 표시 장치
US20120031489A1 (en) * 2009-04-08 2012-02-09 Solar Excel B.V. Method for producing a textured plate for a photovoltaic device
EP2417635B1 (en) * 2009-04-08 2012-11-28 Solarexcel B.V. Method for producing a cover plate for a photovoltaic device
US9511517B2 (en) * 2009-07-16 2016-12-06 Panasonic Intellectual Property Management Co., Ltd. Composite optical element and process for production thereof, and imaging device and optical recording/reproduction device each equipped with the composite optical element
DE102009036702A1 (de) * 2009-08-07 2011-02-17 Kdg Mediatech Ag Solarzelle
US8895844B2 (en) 2009-10-23 2014-11-25 The Board Of Trustees Of The Leland Stanford Junior University Solar cell comprising a plasmonic back reflector and method therefor
WO2011050179A2 (en) * 2009-10-23 2011-04-28 The Board Of Trustees Of The Leland Stanford Junior University Optoelectronic semiconductor device and method of fabrication
US8999857B2 (en) 2010-04-02 2015-04-07 The Board Of Trustees Of The Leland Stanford Junior University Method for forming a nano-textured substrate
US9991407B1 (en) * 2010-06-22 2018-06-05 Banpil Photonics Inc. Process for creating high efficiency photovoltaic cells
TWI422869B (zh) * 2010-09-24 2014-01-11 Young Optics Inc 透鏡陣列模組及投影裝置
JP5494771B2 (ja) * 2011-09-30 2014-05-21 ダイキン工業株式会社 集光フィルム、太陽電池モジュール、及び、転写モールド
TWM521743U (zh) * 2015-12-02 2016-05-11 Proradiant Opto Co Ltd 陣列透鏡板
KR102135316B1 (ko) * 2015-12-30 2020-09-17 에이에스엠엘 네델란즈 비.브이. 직접 기입 마스크리스 리소그래피를 위한 방법 및 장치
EP3214659A1 (en) 2016-03-02 2017-09-06 DSM IP Assets B.V. Bi-facial photovoltaic device comprising a rear texture
US11583389B2 (en) 2019-04-05 2023-02-21 Amo Groningen B.V. Systems and methods for correcting photic phenomenon from an intraocular lens and using refractive index writing
US11564839B2 (en) 2019-04-05 2023-01-31 Amo Groningen B.V. Systems and methods for vergence matching of an intraocular lens with refractive index writing
US11583388B2 (en) 2019-04-05 2023-02-21 Amo Groningen B.V. Systems and methods for spectacle independence using refractive index writing with an intraocular lens
US11944574B2 (en) 2019-04-05 2024-04-02 Amo Groningen B.V. Systems and methods for multiple layer intraocular lens and using refractive index writing
US11529230B2 (en) 2019-04-05 2022-12-20 Amo Groningen B.V. Systems and methods for correcting power of an intraocular lens using refractive index writing
US11678975B2 (en) 2019-04-05 2023-06-20 Amo Groningen B.V. Systems and methods for treating ocular disease with an intraocular lens and refractive index writing

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4114983A (en) * 1977-02-18 1978-09-19 Minnesota Mining And Manufacturing Company Polymeric optical element having antireflecting surface
JPS6375702A (ja) * 1986-09-19 1988-04-06 Hitachi Ltd 反射防止膜
JP3039937B2 (ja) * 1988-09-09 2000-05-08 株式会社日立製作所 超微粒子
US5189337A (en) * 1988-09-09 1993-02-23 Hitachi, Ltd. Ultrafine particles for use in a cathode ray tube or an image display face plate
JP3218682B2 (ja) * 1992-05-18 2001-10-15 株式会社日立製作所 超微粒子膜の形成方法、透明板並びに画像表示板
DE3831503A1 (de) * 1988-09-16 1990-03-22 Ver Glaswerke Gmbh Transparente deckschicht mit reflexionsvermindernder eigenschaft fuer durchsichtige glas- oder kunststoffsubstrate
JPH04122740A (ja) * 1990-09-12 1992-04-23 Mitsubishi Rayon Co Ltd 帯電防止性能を有する反射防止成形物の製造方法
JPH0588001A (ja) * 1991-09-27 1993-04-09 Toshiba Corp 陰極線管のフエース部外表面の反射防止膜形成方法
JPH05288903A (ja) * 1992-04-09 1993-11-05 Hitachi Ltd 超微粒子膜
JPH0645627A (ja) * 1992-07-21 1994-02-18 Sanyo Electric Co Ltd 光起電力素子
JP3323614B2 (ja) * 1993-12-27 2002-09-09 株式会社日立製作所 透明部材とその製造方法

Also Published As

Publication number Publication date
US6075652A (en) 2000-06-13
CN1146810A (zh) 1997-04-02

Similar Documents

Publication Publication Date Title
KR970702504A (ko) 볼록 초미립자면 구조
SK12172002A3 (sk) Fólia s kompozitným obrazom, ktorý sa vznáša
JP2007501443A5 (ko)
RU2007115925A (ru) Оптические пленки для направления света к активным зонам дисплеев
EP1253586A3 (en) Optical information recording medium
DE68924016D1 (de) Optische Informationsaufzeichnungsmethode und Medium.
KR20010031581A (ko) 변경된 비활성 영역이 있는 큐브 코너 제품 및 그 제조 방법
US5046159A (en) Image transmitting element and process for producing same
US5163117A (en) Image transmitting element comprising an array of photo-transmissible holes
EP0895231A3 (en) Optical information recording medium
EP0757262A4 (en) CONVEX SURFACE STRUCTURE MADE OF ULTRAFINE PARTICLES
DE60310933D1 (de) Zweischichtiger optischer datenträger und gebrauch desselben
WO1999059148A3 (en) Device for optically scanning a record carrier
JPS5565911A (en) Optical system of copying machine
JP2001027714A (ja) 光メモリ素子及びその製造方法
US6395435B1 (en) Photo-lithographic mask having total internal reflective surfaces
KR20220163326A (ko) 적층체의 제조방법
JP2001010106A (ja) 記録ヘッド
JPS6016102U (ja) ホログラム光学素子
JP2006098798A (ja) 高分子光導波路の製造方法
JPH0477970B2 (ko)
JPH09171364A (ja) ホログラフィック指向性反射体
JPH0263089A (ja) ホログラム記録材料
JPS647349A (en) Optical memory medium
JPH05103154A (ja) 読み取り光学装置

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid