KR970702504A - 볼록 초미립자면 구조 - Google Patents
볼록 초미립자면 구조Info
- Publication number
- KR970702504A KR970702504A KR1019960705880A KR19960705880A KR970702504A KR 970702504 A KR970702504 A KR 970702504A KR 1019960705880 A KR1019960705880 A KR 1019960705880A KR 19960705880 A KR19960705880 A KR 19960705880A KR 970702504 A KR970702504 A KR 970702504A
- Authority
- KR
- South Korea
- Prior art keywords
- light
- convex
- refractive index
- fine
- transfer
- Prior art date
Links
- 239000011882 ultra-fine particle Substances 0.000 claims abstract 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract 5
- 238000000034 method Methods 0.000 claims abstract 4
- 230000003287 optical effect Effects 0.000 claims abstract 4
- 230000001795 light effect Effects 0.000 claims abstract 3
- 238000004519 manufacturing process Methods 0.000 claims abstract 3
- 239000000463 material Substances 0.000 claims 7
- 239000010408 film Substances 0.000 claims 3
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 229920000742 Cotton Polymers 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 239000010419 fine particle Substances 0.000 claims 1
- 238000005065 mining Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 230000003362 replicative effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/12—Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/76—Photosensitive materials characterised by the base or auxiliary layers
- G03C1/825—Photosensitive materials characterised by the base or auxiliary layers characterised by antireflection means or visible-light filtering means, e.g. antihalation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10584—Record carriers characterised by the selection of the material or by the structure or form characterised by the form, e.g. comprising mechanical protection elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Photovoltaic Devices (AREA)
Abstract
본 발명은 렌즈, 태양전지의 채광면, 광디스크 등의 기록담체, 감광필름등의 감광체, 집적회로의 제조장치등에 있어서, 광반사를 경감하고, 또한 채광효과를 향상시키는 볼록 초미립자 면구조에 관한 것으로서, 렌즈 등의 표면 및/또한 계면에 볼록 초미립자면을 형성하는 방법으로, SiO2등에 의해 형성된 굴절율이 연속적으로 변화하는 볼록 초미립자면을 전사한 오목 초미립자면을 전사면으로 가지는 스탬퍼(108)를 이용하여 볼록 초미립자면을 복제하는 것을 특징으로 한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 렌즈의 단면도.
Claims (25)
- 광반사의 경감 및/또는 채광효과의 향상을 위해 SiO2등에 의해 형성된 굴절율이 연속적으로 변화하는 볼록 초미립자면을 전사한 오목 미립자면을 전사면으로 갖는 스탬퍼를 이용하여 복제된 것을 특징으로 하는 볼록 초미립자면 구조.
- 청구항 제1항의 면구조를 채광면으로 이용한 것을 특징으로 하는 태양전지.
- 청구항 제1항의 면구조를 가지는 것을 특징으로 하는 기록담체.
- 청구항 제1항의 면구조를 가진 것을 특징으로 하는 필름, 판 등의 시트부재.
- 청구항 제1항의 면구조를 표면, 내부면 또는 계면에 가지는 것을 특징으로 하는 렌즈.
- 청구항 제1항의 면구조를 가지는 것을 특징으로 하는 감광 필름, 인화지 등의 감광체.
- 청구항 제1항의 상기 면구조를 광원으로부더 레지스트층에 도달하는 광로내에 배치된 복수의 수광면중 적어도 한 면 또는 상기 레지스트층의 표면에 이용한 장치에 의해 제조된 것을 특징으로 하는 집적회로.
- 수지렌즈의 표면, 이면 또는 제면중 적어도 한 면에 곡률반경이 15∼150nm인 미세한 오목면 및/또는 볼록면을 형성한 것을 특징으로 하는 안경용 렌즈.
- 미세한 오목면 및/또는 볼록면을 스탬퍼를 이용하여 전사 형성하는 것을 특징으로 하는 안경용 렌즈의 제조방법.
- 광반사의 경감 및/또는 채광효과의 향상을 위해, SiO2등에 의해 형성된 굴절율이 연속적으로 변화하는 초미립자면을 제1모형으로 한 전사면을 채광기구의 적어도 일부에 설치한 것을 특징으로 하는 태양전지.
- 굴절률이 연속적으로 변화하는 초미립자면을 모형으로 한 전사면과, 제2이하의 모형으로 한 전사면을 채광기구중 적어도 일부에 설치한 것을 특징으로 하는 태양진지.
- 상기 제1모형 또는 제2이하의 모형을 이용한 전사면에 광변환 소재를 정착시킨 것을 특징으로 하는 태양전지.
- 레이져 광선의 입사광 및/또는 그 반사광에 의해 판독할 수 있는 기록을 가진 담체위에 상기 광선의 입자광 및/또는 그 반사광의 파장에 해당하는 레이져 광선의 기록면으로의 도달 효율 및 기록면으로부터의 반사광의 도달효율을 높이기 위한 굴절율이 연속적으로 변화하는 초미립자층을 적어도 일부에 설치하여 이루어진 것을 특징으로 하는 기록담체.
- 제13항에 있어서, 초미립자가 SiO2인 것을 특징으로 하는 기록담체.
- 제13항에 있어서, 기록담체의 초미립자층을 전사하여 이루어진 층을 가지는 것을 특징으로 하는 기록담체.
- 제15항에 있어서, 기록담체의 초미립자층을 전사하여 얻어지는 미세한 오목부에, 이 오목부를 구성하는 물질의 굴절율 보다 작은 굴절율을 가지는 물질을 충전하는 것을 특징으로 하는 기록담체.
- 제13항에 있어서, 초미립자층을 전사하여 얻어지는 전사면을 모형으로 하여 반구형상의 미세한 볼록부를 설치하는 것을 특징으로 하는 기록담체.
- 초미립자층을 전사하여 얻어지는 전사면을 모형으로 하여 반구형상의 미세한 볼록부를 설치하는 것을 특징으로 하는 투명수지필름 또는 판.
- 반사를 경감하여 채광효율을 향상시키기 위해 SiO2등에 의해 형성된 굴절율이 연속적으로 변화하는 초미립자면을 제1모형으로 한 전사면을 빛이 투과하는 물질의 계면중 적어도 한 개의 계면에 형성한 것을 특징으로 하는 감광재료.
- 굴절율이 연속적으로 변화하는 초미립자면을 모형으로 한 전사면을 제2이하의 모형으로 한 전사면을 빛이 투과하는 물질의 층의 계면중 적어도 한 개의 계면에 형성한 것을 특징으로 하는 감광재료.
- 집적회로를 광학적수법에 의해 작성할 때, 베이스 표면에 구성하는 박막이나 레지스트 등으로 이루어진 적층면 및/또는 조사원으로부터 상기 적층면에 도달하는 광로내에 설치된 마스크, 렌즈 등의 광투과체중 적어도 한 면에 연속적으로 굴절율을 변화시킬 수 있는 15∼50nm의 깊이의 미세한 요철면을 스탬퍼 등의 전사수단을 이용하여 형성하고, 상기 적층면이나 상기 광투과체에서의 조사광이나 투과광의 반사율을 저감시키는 것을 특징으로 하는 제조방법.
- 연속적으로 굴절율을 변화시키는 15∼150nm 깊이의 미세한 요철면을 투영노광법을 수단으로 하여 형성하는 것을 특징으로 하는 제조방법.
- 청구항 제21항 또는 제22항의 방법을 이용하여 IC 또는 LSI등의 집적회로를 제조하는 것을 특징으로 하는 노광장치.
- 청구항 제21항 또는 제22항의 방법에 의해 제조된 것을 특징으로 하는 IC 또는 LSI등의 집적회로.
- 청구항 제24항의 집적회로를 이용한 젓을 특징으로 하는 칩.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7029222A JPH08221828A (ja) | 1995-02-17 | 1995-02-17 | 低反射面を有する光記録担体 |
JP95-29222 | 1995-02-17 | ||
JP07261195A JP3408354B2 (ja) | 1995-03-30 | 1995-03-30 | 太陽電池の製造方法 |
JP95-72611 | 1995-03-30 | ||
JP11854595A JPH08314064A (ja) | 1995-05-17 | 1995-05-17 | 光反射防止機能を付与した写真用感光材料 |
JP95-118545 | 1995-05-17 | ||
JP95-223516 | 1995-08-31 | ||
JP22351695A JP4030601B2 (ja) | 1995-08-31 | 1995-08-31 | 眼鏡用樹脂レンズの成形用スタンパ |
JP2235096A JPH09211842A (ja) | 1996-02-08 | 1996-02-08 | 光学的手段を用いた電子回路形成における光反射防止方法及びその装置とその製品 |
JP96-22350 | 1996-02-08 | ||
PCT/JP1996/000350 WO1996025677A1 (fr) | 1995-02-17 | 1996-02-16 | Structure de surface convexe d'un grain ultra-fin |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970702504A true KR970702504A (ko) | 1997-05-13 |
Family
ID=27520448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960705880A KR970702504A (ko) | 1995-02-17 | 1996-02-16 | 볼록 초미립자면 구조 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6075652A (ko) |
KR (1) | KR970702504A (ko) |
CN (1) | CN1146810A (ko) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10039208A1 (de) * | 2000-08-10 | 2002-04-18 | Fraunhofer Ges Forschung | Verfahren zur Herstellung eines Werkzeugs, das zur Schaffung optisch wirksamer Oberflächenstrukturen im sub-mum Bereich einsetzbar ist, sowie ein diesbezügliches Werkzeug |
US7018674B2 (en) * | 2001-03-02 | 2006-03-28 | Omron, Corporation | Manufacturing methods and apparatuses of an optical device and a reflection plate provided with a resin thin film having a micro-asperity pattern |
ATE317123T1 (de) * | 2001-04-20 | 2006-02-15 | Fuji Photo Film Co Ltd | Reaktiver träger zur bestimmung von dna fragmenten |
US6896398B2 (en) * | 2001-04-27 | 2005-05-24 | Ilight Technologies, Inc. | Simulated neon illumination device using end-lit waveguide |
CN100391011C (zh) * | 2001-12-13 | 2008-05-28 | 旭硝子株式会社 | 用于太阳能电池的防护玻璃罩 |
US8322883B2 (en) | 2003-02-04 | 2012-12-04 | Ilight Technologies, Inc. | Flexible illumination device for simulating neon lighting |
US7119962B2 (en) * | 2003-08-13 | 2006-10-10 | Eastman Kodak Company | Method of manufacturing a molded lenslet array |
US7465075B2 (en) * | 2005-03-21 | 2008-12-16 | Visteon Global Technologies, Inc. | Lens assembly for an automobile light assembly having LED light source |
US7401948B2 (en) * | 2005-10-17 | 2008-07-22 | Visteon Global Technologies, Inc. | Near field lens having reduced size |
US7160010B1 (en) | 2005-11-15 | 2007-01-09 | Visteon Global Technologies, Inc. | Light manifold for automotive light module |
US7489453B2 (en) * | 2005-11-15 | 2009-02-10 | Visteon Global Technologies, Inc. | Side emitting near field lens |
US7564070B2 (en) * | 2005-11-23 | 2009-07-21 | Visteon Global Technologies, Inc. | Light emitting diode device having a shield and/or filter |
US7438454B2 (en) * | 2005-11-29 | 2008-10-21 | Visteon Global Technologies, Inc. | Light assembly for automotive lighting applications |
GB2435716A (en) * | 2006-03-02 | 2007-09-05 | Higher Way Electronic Co Ltd | Package structure for a solar chip |
AU2006200920B2 (en) * | 2006-03-03 | 2009-09-10 | Higher Way Electronic Co., Ltd. | Packaging structure for a solar chip |
US7701641B2 (en) * | 2006-03-20 | 2010-04-20 | Ophthonix, Inc. | Materials and methods for producing lenses |
US7554742B2 (en) * | 2007-04-17 | 2009-06-30 | Visteon Global Technologies, Inc. | Lens assembly |
US20080276990A1 (en) * | 2007-05-10 | 2008-11-13 | Board Of Regents, University Of Texas System | Substrate surface structures and processes for forming the same |
MY165985A (en) * | 2007-11-05 | 2018-05-21 | Dsm Ip Assets Bv | Photovoltaic device |
EP2139048A1 (en) * | 2008-06-23 | 2009-12-30 | Photon BV | Photovoltaic device with improved spectral response |
KR101617485B1 (ko) * | 2008-12-05 | 2016-05-02 | 도판 인사츠 가부시키가이샤 | 광학 부품, 조명 장치 및 표시 장치 |
US20120031489A1 (en) * | 2009-04-08 | 2012-02-09 | Solar Excel B.V. | Method for producing a textured plate for a photovoltaic device |
EP2417635B1 (en) * | 2009-04-08 | 2012-11-28 | Solarexcel B.V. | Method for producing a cover plate for a photovoltaic device |
US9511517B2 (en) * | 2009-07-16 | 2016-12-06 | Panasonic Intellectual Property Management Co., Ltd. | Composite optical element and process for production thereof, and imaging device and optical recording/reproduction device each equipped with the composite optical element |
DE102009036702A1 (de) * | 2009-08-07 | 2011-02-17 | Kdg Mediatech Ag | Solarzelle |
US8895844B2 (en) | 2009-10-23 | 2014-11-25 | The Board Of Trustees Of The Leland Stanford Junior University | Solar cell comprising a plasmonic back reflector and method therefor |
WO2011050179A2 (en) * | 2009-10-23 | 2011-04-28 | The Board Of Trustees Of The Leland Stanford Junior University | Optoelectronic semiconductor device and method of fabrication |
US8999857B2 (en) | 2010-04-02 | 2015-04-07 | The Board Of Trustees Of The Leland Stanford Junior University | Method for forming a nano-textured substrate |
US9991407B1 (en) * | 2010-06-22 | 2018-06-05 | Banpil Photonics Inc. | Process for creating high efficiency photovoltaic cells |
TWI422869B (zh) * | 2010-09-24 | 2014-01-11 | Young Optics Inc | 透鏡陣列模組及投影裝置 |
JP5494771B2 (ja) * | 2011-09-30 | 2014-05-21 | ダイキン工業株式会社 | 集光フィルム、太陽電池モジュール、及び、転写モールド |
TWM521743U (zh) * | 2015-12-02 | 2016-05-11 | Proradiant Opto Co Ltd | 陣列透鏡板 |
KR102135316B1 (ko) * | 2015-12-30 | 2020-09-17 | 에이에스엠엘 네델란즈 비.브이. | 직접 기입 마스크리스 리소그래피를 위한 방법 및 장치 |
EP3214659A1 (en) | 2016-03-02 | 2017-09-06 | DSM IP Assets B.V. | Bi-facial photovoltaic device comprising a rear texture |
US11583389B2 (en) | 2019-04-05 | 2023-02-21 | Amo Groningen B.V. | Systems and methods for correcting photic phenomenon from an intraocular lens and using refractive index writing |
US11564839B2 (en) | 2019-04-05 | 2023-01-31 | Amo Groningen B.V. | Systems and methods for vergence matching of an intraocular lens with refractive index writing |
US11583388B2 (en) | 2019-04-05 | 2023-02-21 | Amo Groningen B.V. | Systems and methods for spectacle independence using refractive index writing with an intraocular lens |
US11944574B2 (en) | 2019-04-05 | 2024-04-02 | Amo Groningen B.V. | Systems and methods for multiple layer intraocular lens and using refractive index writing |
US11529230B2 (en) | 2019-04-05 | 2022-12-20 | Amo Groningen B.V. | Systems and methods for correcting power of an intraocular lens using refractive index writing |
US11678975B2 (en) | 2019-04-05 | 2023-06-20 | Amo Groningen B.V. | Systems and methods for treating ocular disease with an intraocular lens and refractive index writing |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4114983A (en) * | 1977-02-18 | 1978-09-19 | Minnesota Mining And Manufacturing Company | Polymeric optical element having antireflecting surface |
JPS6375702A (ja) * | 1986-09-19 | 1988-04-06 | Hitachi Ltd | 反射防止膜 |
JP3039937B2 (ja) * | 1988-09-09 | 2000-05-08 | 株式会社日立製作所 | 超微粒子 |
US5189337A (en) * | 1988-09-09 | 1993-02-23 | Hitachi, Ltd. | Ultrafine particles for use in a cathode ray tube or an image display face plate |
JP3218682B2 (ja) * | 1992-05-18 | 2001-10-15 | 株式会社日立製作所 | 超微粒子膜の形成方法、透明板並びに画像表示板 |
DE3831503A1 (de) * | 1988-09-16 | 1990-03-22 | Ver Glaswerke Gmbh | Transparente deckschicht mit reflexionsvermindernder eigenschaft fuer durchsichtige glas- oder kunststoffsubstrate |
JPH04122740A (ja) * | 1990-09-12 | 1992-04-23 | Mitsubishi Rayon Co Ltd | 帯電防止性能を有する反射防止成形物の製造方法 |
JPH0588001A (ja) * | 1991-09-27 | 1993-04-09 | Toshiba Corp | 陰極線管のフエース部外表面の反射防止膜形成方法 |
JPH05288903A (ja) * | 1992-04-09 | 1993-11-05 | Hitachi Ltd | 超微粒子膜 |
JPH0645627A (ja) * | 1992-07-21 | 1994-02-18 | Sanyo Electric Co Ltd | 光起電力素子 |
JP3323614B2 (ja) * | 1993-12-27 | 2002-09-09 | 株式会社日立製作所 | 透明部材とその製造方法 |
-
1996
- 1996-02-16 US US08/732,482 patent/US6075652A/en not_active Expired - Fee Related
- 1996-02-16 CN CN96190116A patent/CN1146810A/zh active Pending
- 1996-02-16 KR KR1019960705880A patent/KR970702504A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US6075652A (en) | 2000-06-13 |
CN1146810A (zh) | 1997-04-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR970702504A (ko) | 볼록 초미립자면 구조 | |
SK12172002A3 (sk) | Fólia s kompozitným obrazom, ktorý sa vznáša | |
JP2007501443A5 (ko) | ||
RU2007115925A (ru) | Оптические пленки для направления света к активным зонам дисплеев | |
EP1253586A3 (en) | Optical information recording medium | |
DE68924016D1 (de) | Optische Informationsaufzeichnungsmethode und Medium. | |
KR20010031581A (ko) | 변경된 비활성 영역이 있는 큐브 코너 제품 및 그 제조 방법 | |
US5046159A (en) | Image transmitting element and process for producing same | |
US5163117A (en) | Image transmitting element comprising an array of photo-transmissible holes | |
EP0895231A3 (en) | Optical information recording medium | |
EP0757262A4 (en) | CONVEX SURFACE STRUCTURE MADE OF ULTRAFINE PARTICLES | |
DE60310933D1 (de) | Zweischichtiger optischer datenträger und gebrauch desselben | |
WO1999059148A3 (en) | Device for optically scanning a record carrier | |
JPS5565911A (en) | Optical system of copying machine | |
JP2001027714A (ja) | 光メモリ素子及びその製造方法 | |
US6395435B1 (en) | Photo-lithographic mask having total internal reflective surfaces | |
KR20220163326A (ko) | 적층체의 제조방법 | |
JP2001010106A (ja) | 記録ヘッド | |
JPS6016102U (ja) | ホログラム光学素子 | |
JP2006098798A (ja) | 高分子光導波路の製造方法 | |
JPH0477970B2 (ko) | ||
JPH09171364A (ja) | ホログラフィック指向性反射体 | |
JPH0263089A (ja) | ホログラム記録材料 | |
JPS647349A (en) | Optical memory medium | |
JPH05103154A (ja) | 読み取り光学装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |