KR970702222A - 기재의 피복방법(coating of substrates) - Google Patents

기재의 피복방법(coating of substrates)

Info

Publication number
KR970702222A
KR970702222A KR1019960705551A KR19960705551A KR970702222A KR 970702222 A KR970702222 A KR 970702222A KR 1019960705551 A KR1019960705551 A KR 1019960705551A KR 19960705551 A KR19960705551 A KR 19960705551A KR 970702222 A KR970702222 A KR 970702222A
Authority
KR
South Korea
Prior art keywords
membrane
coating
base
substrate
atmosphere
Prior art date
Application number
KR1019960705551A
Other languages
English (en)
Other versions
KR100363546B1 (ko
Inventor
프레더릭 어니스트 핸콕
레이몬드 피터 개논
Original Assignee
그레이트윅 크리스토퍼
임페리얼 케미컬 인더스트리스 피엘씨
포터 더글라스
더 유니버시티 오브 퀸슬랜드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AUPM4840A external-priority patent/AUPM484094A0/en
Priority claimed from AUPN0260A external-priority patent/AUPN026094A0/en
Application filed by 그레이트윅 크리스토퍼, 임페리얼 케미컬 인더스트리스 피엘씨, 포터 더글라스, 더 유니버시티 오브 퀸슬랜드 filed Critical 그레이트윅 크리스토퍼
Publication of KR970702222A publication Critical patent/KR970702222A/ko
Application granted granted Critical
Publication of KR100363546B1 publication Critical patent/KR100363546B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3618—Coatings of type glass/inorganic compound/other inorganic layers, at least one layer being metallic
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
    • C03C17/04—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass by fritting glass powder
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3639—Multilayers containing at least two functional metal layers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3642—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating containing a metal layer
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
    • C03C3/0745—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc containing more than 50% lead oxide, by weight
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/122—Silica-free oxide glass compositions containing oxides of As, Sb, Bi, Mo, W, V, Te as glass formers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/481—Insulating layers on insulating parts, with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Laminated Bodies (AREA)
  • Surface Treatment Of Glass (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

중간 멤브레인을 사용하여 기제에 피막을 적용시킨다. 피막은 전형적으로 전도성 또는 반전도성이고, 기제는 전형적으로 유리이다. 하나의 형태에서, 피복제는 하나 이상의 층으로 평평한 가요성 멤브레인에 도포된다.
이어, 멤브례인을 기제상에 위치시키고, 이 조합체를 가열 쳄버내에서 조절된 조건하에 처리한다. 이 조합체를 먼저 중성 대기에서 가열하여 일시적인 멤브레인을 휘발시킨 다음, 연속해서 산화성 및 환원성 조건하에 가열하여 피막과 기제사이에 강한 결함을 형성시킨다. 다른 형태에서는, 영구적인 멤브레인이 기제와 물리적 및 화학적으로 상용성이고 화학적으로 또는 열에 의해 처리될 때 기제와 결합하는 기제접촉표면을 갖는다.

Description

기제의 피복방법(COATING OF SUBSTRATES)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (25)

  1. 멤브레인의 표면에 피북제를 도포하는 단계, 멤브레인을 기제상에 위치시키는 단계, 멤브레인이 제거되고 피막이 기제에 결합될 수 있도록 조절된 조건하에 기제, 멤브레인 및 피막의 조합체를 처리하는 단계를 포함하는, 비전도성 기제에 피막을 적용시키는 방법.
  2. 제1항에 있어서, 상기 피막이 전도성 또는 반전도성 물질의 피막인 방법.
  3. 제1항에 있어서, 상기 처리단계가 멤브레인을 가열하여 멤브레인이 기제상에 어떠한 실질적인 잔사도 남기지 않고 휘발되도록 하는 것을 포함하는 방법.
  4. 제3항에 있어서, 상기 멤브레인을 중성, 산화성 및 환원성 대기에서 연속적으로 가열하는 방법.
  5. 제4항에 있어서, 상기 처리단계가 중성 대기의 온도를 약 620℃까지 점진적으로 상승시켜 멤브레인을 휘발시키고, 대기를 산화성 대기로 변화시키고 온도를 소정 기간동안 약 620℃에서 유발시키며, 환원성 대기에서 온도를 소정기간동안 약 1200℃까지 상승시키고, 중성 대기에서 기제를 냉각시키는 것을 포함하는 방법.
  6. 제4항에 있어서, 상기 처리단계를 진공 쳄버에서 실시하는 방법.
  7. 제1항에 있어서, 상기 멤브레인이 디에틸렌 글리콜 모노스테레이트 또는 폴리비닐 알콜을 포함하는 방법.
  8. 제1항에 있어서, 상기 멤브레인이 전분과 혼합된, 셀를로즈 가교결합된 매트릭스를 포함하는 방법.
  9. 제1항에 있어서, 상기 처리단계가 기제를 용매 용액에 용해시키는 것을 포함하는 방법.
  10. 제1항에 있어서, 상기 피막을 액체 또는 겔 매질중 미세한 금속 분말의 형태로 기재에 도포하는 방법.
  11. 제10항에 있어서, 상기 피복제를 실크 스크린 또는 스텐실 공정으로 멤브레인상에 침착시키는 방법.
  12. 제1항에 있어서, 상기 피막을 콜로이드 상태로 기제에 적용시키는 방법.
  13. 제1항에 있어서, 상기 피복제를 사진석판술로 멤브레인상에 도포하는 방법.
  14. 제1항에 있어서, 상기 피막이 다층 피막인 방법.
  15. 제14항에 있어서, 상기 피복제를 예정된 패턴으로 진공 증발 및/또는 스퍼터링 기법에 의해 다수의 전도성, 반전도성 및/또는 절연성 층으로 멤브레인상에 점진적으로 도포하는 방법.
  16. 제14항에 있어서, 상기 피복제를 다층 피복제로서 멤브레인상에 도포하는 방법.
  17. 제14항에 있어서, 상기 피복제가 용융 물질을 포함하고, 처리단계가 상기 조합체를 가열하여 용융 물질이 피막의 층들 및/또는 피막을 기제에 상호결합시키도록 하는 것을 포함하는 방법.
  18. 제1항에 있어서, 상기 피복제가 감광성 및/또는 전기변색성 화합물을 포함하고, 기제가 유리 시이트인 방법.
  19. 제1항에 있어서, 상기 기제가 구부러진 표면을 갖은 유리이고, 상기 멤브레인을 상기 구부러진 표면에 적용시키는 방법.
  20. 피복제를 멤브레인상에 침착시키는 단계, 멤브레인을 기제상에 위치시키는 단계를 포함하며, 이 때 상기 멤브레인이 기제물질과 화확직으로 및/또는 물리적으로 상용성인 기제 접촉물질을 갖는, 비전도성 기제에 피막을 적용시키는 방법.
  21. 제20항에 있어서, 상기 멤브레인이 실리콘 겔인 방법.
  22. 제20항에 있어서, 상기 피막이 멤브레인과 기제의 중간에 위치하는 방법·
  23. 제1항에 있어서, 기제가 유리인 방법.
  24. 제1항의 방법에 의해 제조된 피복된 기제.
  25. 제20항의 방법에 의해 제조된 피복된 기제.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960705551A 1994-04-05 1995-04-05 기재의피복방법 KR100363546B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB9406117.3 1994-03-28
AUPM4840A AUPM484094A0 (en) 1994-04-05 1994-04-05 Coating of substrates
AUPM4840 1994-04-05
AUPN0260 1994-12-22
AUPN0260A AUPN026094A0 (en) 1994-12-22 1994-12-22 Coated substrates and their uses

Publications (2)

Publication Number Publication Date
KR970702222A true KR970702222A (ko) 1997-05-13
KR100363546B1 KR100363546B1 (ko) 2003-01-24

Family

ID=25644655

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960705551A KR100363546B1 (ko) 1994-04-05 1995-04-05 기재의피복방법

Country Status (9)

Country Link
US (1) US5916401A (ko)
EP (1) EP0759893A4 (ko)
JP (1) JPH09510949A (ko)
KR (1) KR100363546B1 (ko)
CN (1) CN1147805A (ko)
CA (1) CA2187231A1 (ko)
NZ (1) NZ283305A (ko)
RU (1) RU2152911C2 (ko)
WO (1) WO1995026935A1 (ko)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9525111D0 (en) * 1995-12-08 1996-02-07 Pilkington Plc Glass and glass products
TWI231293B (en) 1997-11-12 2005-04-21 Jsr Corp Transfer film
KR100637904B1 (ko) * 1998-03-18 2006-10-24 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 레이저에 의한 관통홀 제조방법
JPH11312860A (ja) * 1998-04-27 1999-11-09 Jsr Corp 電極の製造方法および転写フィルム
CN100427186C (zh) * 2001-09-26 2008-10-22 东洋钢钣株式会社 气体分离设备及其制造方法
US7811628B2 (en) * 2006-12-22 2010-10-12 Roger Wen-Yi Hsu Layered lenses and method of layering lenses
DE102007027999A1 (de) * 2007-06-14 2008-12-18 Leonhard Kurz Gmbh & Co. Kg Heißprägen von Strukturen
US8318265B2 (en) * 2008-06-12 2012-11-27 General Electric Company Plasma mediated processing of non-conductive substrates
US8734920B2 (en) * 2009-04-29 2014-05-27 Guardian Industries Corp. Coated article with low-E coating having titanium oxide layer and/or NiCr based layer(s) to improve color values and/or transmission, and method of making same
CN102638986A (zh) * 2009-08-12 2012-08-15 纯生物科学 采用无水消毒剂的制剂和方法
US10654748B2 (en) 2010-03-29 2020-05-19 Vitro Flat Glass Llc Solar control coatings providing increased absorption or tint
US9932267B2 (en) 2010-03-29 2018-04-03 Vitro, S.A.B. De C.V. Solar control coatings with discontinuous metal layer
US10654747B2 (en) 2010-03-29 2020-05-19 Vitro Flat Glass Llc Solar control coatings with subcritical copper
US20130334089A1 (en) * 2012-06-15 2013-12-19 Michael P. Remington, Jr. Glass Container Insulative Coating
RU2613860C1 (ru) * 2015-10-16 2017-03-21 Константин Владимирович Зименко Способ декоративно-художественной обработки стекла
WO2017087475A1 (en) * 2015-11-16 2017-05-26 Western Michigan University Research Foundation Process for binding conductive ink to glass
ES2939883T3 (es) * 2016-10-13 2023-04-27 Giorgio Macor Método para generar una estructura superficial
RU2640617C1 (ru) * 2016-10-24 2018-01-10 Автономная некоммерческая организация высшего образования "Белгородский университет кооперации, экономики и права" Способ глазурования листовых стекол
US11078718B2 (en) 2018-02-05 2021-08-03 Vitro Flat Glass Llc Solar control coatings with quadruple metallic layers
US10830933B2 (en) 2018-06-12 2020-11-10 Guardian Glass, LLC Matrix-embedded metamaterial coating, coated article having matrix-embedded metamaterial coating, and/or method of making the same
US10562812B2 (en) 2018-06-12 2020-02-18 Guardian Glass, LLC Coated article having metamaterial-inclusive layer, coating having metamaterial-inclusive layer, and/or method of making the same

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3266661A (en) * 1961-10-04 1966-08-16 Corning Glass Works Method of applying electro-conductive coatings and resulting article
DE1219843B (de) * 1962-05-09 1966-06-23 Buntpapierfabrik A G Verfahren zum Dekorieren von nichtglasierten Rohscherben unter Verwendung keramischer Schiebebilder
US3615560A (en) * 1965-03-22 1971-10-26 Philips Corp Methods of manufacturing photosensitive materials
US3521941A (en) * 1967-02-07 1970-07-28 American Cyanamid Co Electro-optical device having variable optical density
US3632365A (en) * 1967-07-13 1972-01-04 Owens Illinois Inc Decorative decal with a pyrolyzable film base
US3655496A (en) * 1969-09-25 1972-04-11 Vitta Corp Tape transfer of sinterable conductive, semiconductive or insulating patterns to electronic component substrates
GB1258660A (ko) * 1969-12-19 1971-12-30
US3615980A (en) * 1970-02-12 1971-10-26 Daniel J Rose Decal metallization of ceramic substrates
JPS5235109B2 (ko) * 1972-02-23 1977-09-07
SU640982A1 (ru) * 1977-01-26 1979-01-05 Предприятие П/Я В-2756 Способ декорировани стеклоизделий
DE2808222C3 (de) * 1978-02-25 1981-09-03 Battelle-Institut E.V., 6000 Frankfurt Verfahren zur Herstellung von Composite-Membranen
DE2910234C2 (de) * 1979-03-15 1983-05-26 Alkor GmbH Kunststoffverkauf, 8000 München Verfahren zur Herstellung eines Formkörpers aus einer Trägerplatte mit einer Dekorschicht
US4448622A (en) * 1982-04-26 1984-05-15 The United States Of America As Represented By The United States Department Of Energy Composite polymeric film and method for its use in installing a very thin polymeric film in a device
JPS5983962A (ja) * 1982-10-29 1984-05-15 Kamaya Kagaku Kogyo Kk ガラス製品の加飾方法
US4469774A (en) * 1983-03-28 1984-09-04 E. I. Du Pont De Nemours And Company Positive-working photosensitive benzoin esters
JPS59190240A (ja) * 1983-04-07 1984-10-29 Toyota Motor Corp 耐摩耗性機能性ガラスの製造方法
US4648179A (en) * 1983-06-30 1987-03-10 International Business Machines Corporation Process of making interconnection structure for semiconductor device
FR2548962B1 (fr) * 1983-07-13 1987-06-05 Saint Gobain Desjonqueres Decor d'objets tels des flacons en verre
US4573768A (en) * 1983-12-05 1986-03-04 The Signal Companies, Inc. Electrochromic devices
JPS605042A (ja) * 1984-05-28 1985-01-11 Dainippon Printing Co Ltd 鏡板の製造法
JPS6116573A (ja) * 1984-07-03 1986-01-24 Matsushita Electronics Corp Ｍｉｓ型半導体装置の製造方法
US4622240A (en) * 1985-11-12 1986-11-11 Air Products And Chemicals, Inc. Process for manufacturing thick-film electrical components
US4753694A (en) * 1986-05-02 1988-06-28 International Business Machines Corporation Process for forming multilayered ceramic substrate having solid metal conductors
JPH07115890B2 (ja) * 1986-12-23 1995-12-13 旭硝子株式会社 ガラス基体面への薄膜形成方法
JP2867568B2 (ja) * 1990-03-19 1999-03-08 トヨタ自動車株式会社 機能性多層薄膜およびその製造方法
JP2655742B2 (ja) * 1990-07-16 1997-09-24 工業技術院長 先細炭素微小電極及びその製造方法
JP3160951B2 (ja) * 1991-08-23 2001-04-25 松下電器産業株式会社 厚膜導体ペースト組成物および多層配線基板の製造方法
JPH0570176A (ja) * 1991-09-18 1993-03-23 Asahi Glass Co Ltd 低反射帯電防止膜及びその製造方法
JPH05221691A (ja) * 1992-02-14 1993-08-31 Asahi Glass Co Ltd 硬質カーボン膜の密着性改善方法
DE4213041C1 (ko) * 1992-04-21 1993-06-09 W.C. Heraeus Gmbh, 6450 Hanau, De
US5302562A (en) * 1992-10-28 1994-04-12 International Business Machines Corporation Method of controlling the densification behavior of a metallic feature in a ceramic material
US5380391A (en) * 1993-03-08 1995-01-10 Mahn, Jr.; John Heat activated transfer for elastomeric materials
US5480503A (en) * 1993-12-30 1996-01-02 International Business Machines Corporation Process for producing circuitized layers and multilayer ceramic sub-laminates and composites thereof

Also Published As

Publication number Publication date
KR100363546B1 (ko) 2003-01-24
CN1147805A (zh) 1997-04-16
EP0759893A1 (en) 1997-03-05
US5916401A (en) 1999-06-29
EP0759893A4 (en) 2000-02-23
RU2152911C2 (ru) 2000-07-20
CA2187231A1 (en) 1995-10-12
JPH09510949A (ja) 1997-11-04
WO1995026935A1 (en) 1995-10-12
NZ283305A (en) 1998-03-25

Similar Documents

Publication Publication Date Title
KR970702222A (ko) 기재의 피복방법(coating of substrates)
RU96121796A (ru) Нанесение покрытия на основание
US5403616A (en) Method for forming patterned transparent conducting film
US2748031A (en) Reproduction of printed patterns by vacuum evaporation
US4348255A (en) Process for the preparation of an optically transparent and electrically conductive film pattern
ATE305057T1 (de) Durch polymerabbau erhältliches nano-poröses material mit niedriger dielektrizitätskonstante
US5766808A (en) Process for forming multilayer lift-off structures
US3210214A (en) Electrical conductive patterns
CN101641769A (zh) 形成图案的方法以及制造电子元件的方法
KR930007390B1 (ko) 기판위에 막패턴을 형성하는 방법 및 패널기판의 제조방법
US3615980A (en) Decal metallization of ceramic substrates
JPH02126638A (ja) 高解像度の導体パターンの形成
DK91388A (da) Substrater til understoetning af elektriske komponenter
JP2001214381A5 (ko)
EP0381927A3 (en) Bidirectional non-linear resistor, active matrix liquid-crystal panel using the same, and method for its production
GB874965A (en) Improvements in or relating to electrical circuits or circuit elements
KR910001457A (ko) 웨이퍼상의 포토레지스트 침착을 개선하기 위한 방법
JPS60231396A (ja) 半導体層を有する積層体
US3482974A (en) Method of plating gold films onto oxide-free silicon substrates
JPS5694736A (en) Manufacturing method of semiconductor device
JPS62286579A (ja) 基板へのレジスト塗布方法
JPH06310413A (ja) レジスト塗布装置及び塗布方法
JPS60159825A (ja) 液晶表示素子の製造方法
JPS5780647A (en) Pulverized sample supporting method
JPH0473652A (ja) 露光方法

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee