KR970076087A - 포지티브형 감광성 수지조성물과 이를 이용한 전자장치 - Google Patents

포지티브형 감광성 수지조성물과 이를 이용한 전자장치 Download PDF

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KR970076087A
KR970076087A KR1019970020546A KR19970020546A KR970076087A KR 970076087 A KR970076087 A KR 970076087A KR 1019970020546 A KR1019970020546 A KR 1019970020546A KR 19970020546 A KR19970020546 A KR 19970020546A KR 970076087 A KR970076087 A KR 970076087A
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South Korea
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resin composition
photosensitive resin
quinonediazidesulfonylamide
group
compound
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KR1019970020546A
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English (en)
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요시아키 오카베
다카오 미와
야스나리 마에카와
다쿠미 우에노
라메스-랑글라드 제랄딘
미나 이시다
Original Assignee
가나이 쓰토무
가부시키가이샤 히타치세이사쿠쇼
탄노 다케시
히타치 카세이 고오교오 가부시키가이샤
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Publication of KR970076087A publication Critical patent/KR970076087A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)

Abstract

소수성기를 갖는 폴리아미드산 에스테르와, O-퀴논디아지드설포닐아미드 화합물, 및/또는 o-퀴논디아지드설포닐아미드 설폰에스테르 화합물을 포함하고, 알칼리 수용액으로 현상가능하며, 구조유니트로서 카르복실기를 갖는 디아민으로 이루어진 고도의 신뢰성을 갖는 포지티브형 감광성 수지조성물과 이를 이용한 전자장치. 미 노광부가 침식되지 않은 양호한 포지티브형 릴리이프 패턴을 갖는 폴리이미드 필름을 얻을 수 있다.

Description

포지티브형 감광성 수지조성물과 이를 이용한 전자장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. 하기의 일반식(I)로 표시되는 폴리아미드산에스테르와;
    여기에서, R1:2가의 유기기(다만, R1의 55∼85몰%는 카르복실기를 포함한다), R2:소수성기,X:-O-,-C(=O)-, 또는 직접결합, n:6∼570, 하기의 일반식(Ⅱ)로 표시되는 o-퀴논디아지드설포닐아미드 화합물:
    여기에서, R6:o-퀴논디아지드설폰기, R4:탄소원자수 2∼30의 유기기, R5:알킬기 또는 수소, m:1∼6, 및/또는 하기의 일반식(Ⅲ)으로 표시되는 o-퀴논디아지드설포닐아미드 설폰에스테르 화합물:
    여기에서, R3:o-퀴논디아지드설폰기, R4: 탄소원자수 2∼30의 유기기, R5:알킬기 또는 수소, m1:1∼5, m2:1∼6을 포함하는, 알칼리 수용액에 의해 현상 가능한 포지티브형 감광성 수지조성물.
  2. 제1항에 있어서, 상기 폴리아미드산 에스테르에 대한 상기 o-퀴논디아지드설포닐아미드 화합물 및/또는 상기 o-퀴논디아지드설포닐아미드 설폰에스테르 화합물의 혼합비율은5∼40중량%의 범위인 것을 특징으로 하는 포지티브형 감광성 수지조성물.
  3. 제1항 또는 제2항에 따른 포지티브형 감광성 수지조성물과 유기용매를 포함하며, 상기 폴리아미드산 에스테르와 상기o-퀴논디아지드설포닐아미드 화합물 및/또는 상기 o-퀴논디아지드설포닐아미드 설폰에스테르화합물의 전체농도가 5∼40중량%의 범위인 것을 특징으로 하는 포지티브형 감광성 수지조성물 니스.
  4. 제3항에 따른 포지티브형 감광성 수지조성물 니스로 제조된 것을 특징으로 하는 폴리이미드 필름.
  5. 하기의 단계들을 포함하는 폴리이미드 필름의 제조방법: 제3항에 따른 포지티브형 감광성 수지조성물 니스를 고형물체상에 도포하는 단계; 프리베이킹하는 단계;원하는 패턴을 가진 포토마스크를 이용하여 노광하는 단계; 알칼리 수용액으로 에치하고 열처리하는 단계.
  6. 제4항에 따른 폴리이미드 필름을 절연층으로 사용하는 것을 특징으로 하는 전자장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970020546A 1996-05-27 1997-05-24 포지티브형 감광성 수지조성물과 이를 이용한 전자장치 KR970076087A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8132042A JPH09319082A (ja) 1996-05-27 1996-05-27 ポジ型感光性樹脂組成物及びそれを用いた電子装置
JP96-132042 1996-05-27

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US (1) US5858584A (ko)
EP (1) EP0810476A1 (ko)
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KR101333704B1 (ko) * 2009-12-29 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
KR20120066923A (ko) 2010-12-15 2012-06-25 제일모직주식회사 신규 페놀 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물
KR101423539B1 (ko) 2010-12-20 2014-07-25 삼성전자 주식회사 포지티브형 감광성 수지 조성물
KR101400192B1 (ko) 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
CN111423582B (zh) * 2020-01-09 2023-04-18 上海极紫科技有限公司 正性光刻胶用聚酰亚胺树脂及其制备方法
JP2022029427A (ja) * 2020-08-04 2022-02-17 信越化学工業株式会社 ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
JP7431696B2 (ja) * 2020-08-04 2024-02-15 信越化学工業株式会社 ポジ型感光性樹脂組成物、ポジ型感光性ドライフィルム、ポジ型感光性ドライフィルムの製造方法、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品

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KR100757108B1 (ko) * 2005-11-28 2007-10-08 씨티엔지니어링주식회사 반도체 소자의 미세 패턴을 형성하기 위한 하드마스크용고분자 및 이를 함유하는 하드마스크용 조성물

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