KR910001455A - 근자외선 방사(near ultraviolet radiation)에 의해 고해상도(高解象度)를 나타내는 산 경화 광저항물(Acid hardening photoresists)에 있어서 선택된 광활성 조성물의 사용법 - Google Patents
근자외선 방사(near ultraviolet radiation)에 의해 고해상도(高解象度)를 나타내는 산 경화 광저항물(Acid hardening photoresists)에 있어서 선택된 광활성 조성물의 사용법 Download PDFInfo
- Publication number
- KR910001455A KR910001455A KR1019900008971A KR900008971A KR910001455A KR 910001455 A KR910001455 A KR 910001455A KR 1019900008971 A KR1019900008971 A KR 1019900008971A KR 900008971 A KR900008971 A KR 900008971A KR 910001455 A KR910001455 A KR 910001455A
- Authority
- KR
- South Korea
- Prior art keywords
- image
- photoresist
- acid
- ultraviolet radiation
- radiation
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims 15
- 230000005855 radiation Effects 0.000 title claims 10
- 239000002253 acid Substances 0.000 title claims 8
- 239000000203 mixture Substances 0.000 title claims 7
- 230000001747 exhibiting effect Effects 0.000 title 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 239000011347 resin Substances 0.000 claims 4
- 229920005989 resin Polymers 0.000 claims 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910052760 oxygen Chemical group 0.000 claims 2
- 239000001301 oxygen Chemical group 0.000 claims 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- 239000011593 sulfur Substances 0.000 claims 2
- TUZVTRCMDIUEBE-UHFFFAOYSA-N 1-chloro-10h-phenothiazine Chemical class S1C2=CC=CC=C2NC2=C1C=CC=C2Cl TUZVTRCMDIUEBE-UHFFFAOYSA-N 0.000 claims 1
- KFZGLJSYQXZIGP-UHFFFAOYSA-N 2-chloro-10h-phenothiazine Chemical compound C1=CC=C2NC3=CC(Cl)=CC=C3SC2=C1 KFZGLJSYQXZIGP-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 239000003550 marker Substances 0.000 claims 1
- 239000003504 photosensitizing agent Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
- Y10S430/121—Nitrogen in heterocyclic ring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
- Y10S430/123—Sulfur in heterocyclic ring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/126—Halogen compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/127—Spectral sensitizer containing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Polymerisation Methods In General (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (10)
- 하기의 것을 포함하는 고해상도 음성 광저항물의 영상물등의 제조법: 광저항 조성물이 근 자외선 방사에 감광된 패턴양식, 언급된 광저항물이 페노티아진 유도체, 강한 UV광산 생성제 및 산경화 수지 시스템을 포함하며, 언급된 저항물이 가열되고 비감광된 영역들을 현상액으로 제거해서 영상을 현상하는 것.
- 하기의 것을 포함하는 고해상도 음성 광저항물의 영상물들의 제조법: 패턴에서 근 자외선 방사의 효과적인 양에 대해 광저항 조성물의 층의 감광된 부분들, 언급된 광저항물이 하기의 것을 포함하는 것 : 약0.50내지 약98%의 산 경화수지; 근 자외선 방사에 반응해서 효과적인 양의 산을 생성하지 않는 약 0.5내지 약25%의 강한 UV광산 생성제와 하기의 구조식을 갖는 약0.5내지 약25%의 감광제;상기식에서, X는 유황이나 산소이고, R은 수소 또는 C1-C6알킬이 될 수 있으며, R1은 수소, 할로겐 또는 C1-C6알킬, 치환되거나 비치환될 수 있다; 언급된 광산 생성제를 근 자외선 방사에 민감하게 하는 것; 언급된 광저항물을 감광된 영역에서 반응을 선택적으로 유발하기 위해 가열하는 것; 광저항물의 비감광된 부분을 선택적으로 제거하기위해 영상을 현상하는 것.
- 광저항 조성물이 근 자외선 방사에 대해 감광되는 것을 포함하는 고해상도 음성 광저항물의 제조법, 언급된 광저항물이 산경화 수지 시스템과 광산 생성제로서 2-클로록페노티아진을 포함하는 것.
- 근 UV방사를 사용해서 작동하는 감광 장치와 함께 사용되는 음성 광저항 조성물이 산 경화 수지 시스템, 근 UV에 반응해서 충분한 산을 생성하지 않는 강한 UV광산 생성제 및 하기 구조식의 감광제를 포함하는 것;상기식에서, X는 유황이나 산소이고, R은 수소나 C1-C6알킬이며, R1은 수소, 할로겐이나 C1-C6알킬, 치환되거나 비치환되며, 근 UV방사에 감광되어 강한 UV광산 생성제로 하여금 산을 생성시킨다.
- 근 UV방사를 사용해서 작동하는 감광 장치와 함께 사용되는 음성 광저항 조성물이 산 경화 수지 시스템과 2-클로로페노티아진을 포함하는 것.
- 초미세한 모양을 포함하고 수직 측벽 단면을 갖는 릴리이프영상을 생성하기 위한 음성 광저항 조성물이 제4항의 광저항물을 포함하는 근 UV방사에 사용되는 것.
- 제6항에 있어서, 영상이 100미크론 이상의 깊이를 가진 모양을 포함하는 것.
- 제7항에 있어서, 영상이 200미크론 이상의 깊이를 가진 모양을 포함하는 것.
- 제7항에 있어서, 영상이 불투명, 투명 및 부분적으로 빛을 투과시키는 영역을 가진 마스크를 사용해서 저항물이 감광됨에 따라 새성된 하나 이상의 표면 상승을 갖는 것.
- 생성물 확인 마커가 제 2항의 방법에 따라 생성된 명백하게 알아볼 수 있는 모양의 현미경으로 판별할 수 있는 자유-부유영상을 포함하는 것.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36943889A | 1989-06-20 | 1989-06-20 | |
US369438 | 1989-06-20 | ||
US369,438 | 1989-06-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910001455A true KR910001455A (ko) | 1991-01-30 |
KR0155990B1 KR0155990B1 (ko) | 1998-11-16 |
Family
ID=23455488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900008971A KR0155990B1 (ko) | 1989-06-20 | 1990-06-19 | 근자외선 방사에 의해 고해상도를 나타내는 산 경화 광저항물에 있어서 선택된 광활성 조성물의 사용법 |
Country Status (13)
Country | Link |
---|---|
US (1) | US5391465A (ko) |
EP (1) | EP0404499A3 (ko) |
JP (1) | JP3026503B2 (ko) |
KR (1) | KR0155990B1 (ko) |
CN (1) | CN1048931A (ko) |
AU (1) | AU5764390A (ko) |
BR (1) | BR9002906A (ko) |
CA (1) | CA2017338A1 (ko) |
FI (1) | FI903096A0 (ko) |
IE (1) | IE902217A1 (ko) |
IL (1) | IL94799A (ko) |
NO (1) | NO902666L (ko) |
ZA (1) | ZA904704B (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0423446B1 (en) * | 1989-10-17 | 1998-03-04 | Shipley Company Inc. | Near UV photoresist |
EP0462391B1 (en) * | 1990-06-19 | 1999-10-06 | Shipley Company Inc. | Acid hardened photoresists |
EP0599779A1 (de) * | 1992-10-29 | 1994-06-01 | OCG Microelectronic Materials AG | Hochauflösender negativ arbeitender Photoresist mit grossem Prozessspielraum |
EP0733665B1 (de) * | 1995-03-23 | 1998-07-29 | Siemens Aktiengesellschaft | Verfahren zur Herstellung von Polybenzoxazol-Vorstufen und entsprechender Resistlösungen |
JP3433017B2 (ja) * | 1995-08-31 | 2003-08-04 | 株式会社東芝 | 感光性組成物 |
US5763134A (en) | 1996-05-13 | 1998-06-09 | Imation Corp | Composition comprising photochemical acid progenitor and specific squarylium dye |
US7147983B1 (en) * | 1996-10-07 | 2006-12-12 | Shipley Company, L.L.C. | Dyed photoresists and methods and articles of manufacture comprising same |
US6376149B2 (en) | 1999-05-26 | 2002-04-23 | Yale University | Methods and compositions for imaging acids in chemically amplified photoresists using pH-dependent fluorophores |
US6468712B1 (en) | 2000-02-25 | 2002-10-22 | Massachusetts Institute Of Technology | Resist materials for 157-nm lithography |
JP4923376B2 (ja) * | 2000-04-04 | 2012-04-25 | ダイキン工業株式会社 | 酸反応性基を有する新規なフッ素ポリマーおよびそれを用いた化学増幅型フォトレジスト組成物 |
US20040192876A1 (en) * | 2002-11-18 | 2004-09-30 | Nigel Hacker | Novolac polymer planarization films with high temparature stability |
CN1802603A (zh) * | 2003-07-17 | 2006-07-12 | 霍尼韦尔国际公司 | 用于高级微电子应用的平面化薄膜及其生产装置和方法 |
US20050202352A1 (en) * | 2004-03-11 | 2005-09-15 | Worcester Polytechnic Institute | Systems and methods for sub-wavelength imaging |
US7638877B2 (en) * | 2006-06-30 | 2009-12-29 | Intel Corporation | Alternative to desmear for build-up roughening and copper adhesion promotion |
KR20130067332A (ko) * | 2011-11-16 | 2013-06-24 | 삼성디스플레이 주식회사 | 노광용 마스크 및 그 마스크를 사용한 기판 제조 방법 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL16065C (ko) * | 1924-04-24 | |||
US4343885A (en) * | 1978-05-09 | 1982-08-10 | Dynachem Corporation | Phototropic photosensitive compositions containing fluoran colorformer |
JPS54153889A (en) * | 1978-05-24 | 1979-12-04 | Toyo Ink Mfg Co Ltd | Photosetting coating composition |
US4442197A (en) * | 1982-01-11 | 1984-04-10 | General Electric Company | Photocurable compositions |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
DE3248246A1 (de) * | 1982-12-28 | 1984-06-28 | Basf Ag, 6700 Ludwigshafen | Positiv arbeitendes verfahren zur herstellung von relief- und druckformen |
JPS59147001A (ja) * | 1983-02-07 | 1984-08-23 | ゼネラル・エレクトリツク・カンパニイ | 光硬化性組成物 |
GB2137626B (en) * | 1983-03-31 | 1986-10-15 | Sericol Group Ltd | Water based photopolymerisable compositions and their use |
GB2139369B (en) * | 1983-05-06 | 1987-01-21 | Sericol Group Ltd | Photosensitive systems showing visible indication of exposure |
DK241885A (da) * | 1984-06-01 | 1985-12-02 | Rohm & Haas | Fotosensible belaegningssammensaetninger, termisk stabile belaegninger fremstillet deraf og anvendelse af saadanne belaegninger til dannelse af termisk stabile polymerbilleder |
US4632891A (en) * | 1984-10-04 | 1986-12-30 | Ciba-Geigy Corporation | Process for the production of images |
CA1307695C (en) * | 1986-01-13 | 1992-09-22 | Wayne Edmund Feely | Photosensitive compounds and thermally stable and aqueous developablenegative images |
US5034304A (en) * | 1986-01-13 | 1991-07-23 | Rohm And Haas Company | Photosensitive compounds and thermally stable and aqueous developable negative images |
DE3710281A1 (de) * | 1987-03-28 | 1988-10-06 | Hoechst Ag | Photopolymerisierbares gemisch und daraus hergestelltes aufzeichnungsmaterial |
-
1990
- 1990-04-19 US US07/511,890 patent/US5391465A/en not_active Expired - Fee Related
- 1990-05-23 CA CA002017338A patent/CA2017338A1/en not_active Abandoned
- 1990-06-15 NO NO90902666A patent/NO902666L/no unknown
- 1990-06-18 ZA ZA904704A patent/ZA904704B/xx unknown
- 1990-06-19 EP EP19900306650 patent/EP0404499A3/en not_active Withdrawn
- 1990-06-19 FI FI903096A patent/FI903096A0/fi not_active Application Discontinuation
- 1990-06-19 IE IE221790A patent/IE902217A1/en unknown
- 1990-06-19 JP JP2161138A patent/JP3026503B2/ja not_active Expired - Lifetime
- 1990-06-19 KR KR1019900008971A patent/KR0155990B1/ko not_active IP Right Cessation
- 1990-06-20 IL IL9479990A patent/IL94799A/en not_active IP Right Cessation
- 1990-06-20 AU AU57643/90A patent/AU5764390A/en not_active Abandoned
- 1990-06-20 BR BR909002906A patent/BR9002906A/pt unknown
- 1990-06-20 CN CN90104923A patent/CN1048931A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
IE902217L (en) | 1990-12-20 |
ZA904704B (en) | 1991-03-27 |
BR9002906A (pt) | 1991-08-20 |
IE902217A1 (en) | 1991-01-16 |
US5391465A (en) | 1995-02-21 |
JP3026503B2 (ja) | 2000-03-27 |
CA2017338A1 (en) | 1990-12-20 |
CN1048931A (zh) | 1991-01-30 |
IL94799A (en) | 1994-02-27 |
IL94799A0 (en) | 1991-04-15 |
AU5764390A (en) | 1991-01-03 |
KR0155990B1 (ko) | 1998-11-16 |
FI903096A0 (fi) | 1990-06-19 |
NO902666L (no) | 1990-12-21 |
EP0404499A2 (en) | 1990-12-27 |
NO902666D0 (no) | 1990-06-15 |
EP0404499A3 (en) | 1992-03-18 |
JPH0387748A (ja) | 1991-04-12 |
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