NO904562L - Positivt virkende fotoresist og fremgangsmaate til fremstilling derav. - Google Patents

Positivt virkende fotoresist og fremgangsmaate til fremstilling derav.

Info

Publication number
NO904562L
NO904562L NO90904562A NO904562A NO904562L NO 904562 L NO904562 L NO 904562L NO 90904562 A NO90904562 A NO 90904562A NO 904562 A NO904562 A NO 904562A NO 904562 L NO904562 L NO 904562L
Authority
NO
Norway
Prior art keywords
acid
photoresist
film
image
cross
Prior art date
Application number
NO90904562A
Other languages
English (en)
Other versions
NO904562D0 (no
Inventor
Mark Robert Winkle
Original Assignee
Rohm & Haas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas filed Critical Rohm & Haas
Publication of NO904562D0 publication Critical patent/NO904562D0/no
Publication of NO904562L publication Critical patent/NO904562L/no

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/164—Coating processes; Apparatus therefor using electric, electrostatic or magnetic means; powder coating

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

Et positivt virkende fotoresistpreparat som gir tverr- bundne bilder fremstilles fra en blanding inneholdende et filradannende, polymerholdig syreherdende harpikssystem, en syre eller et syredannende materiale for tverrbinding av det syreherdende harpikssystem samt en fotobasedannende forbindel- se. Fotoresistpreparatet påføres på en substratoverflate og eksponeres billedvis og selektivt .gjennom en fotomaske til aktinisk stråling. Den aktiniske stråling forårsaker at fotobasedanneren fremstiller en base i de billedvise eksponerte deler av foto- resistfilmen. Den fotokjemisk dannede base nøytraliserer syren i de billedvise eksponerte områder av fotoresistfilmen. De ikke-billedvise eksponerte deler av fotoresistfilmen og som ikke inneholder den fotokjemiskdannede base, tverrbindes ved den katalytiske innvirkning av syren ved oppvarming av filmen og de billedvis eksponerte deler av fotoresistfilmen fjernes fra substratet ved innvirkning av en fremkalleroppløsning som etterlater et tverrbundet positivt bilde på substaratet.
NO90904562A 1989-10-27 1990-10-23 Positivt virkende fotoresist og fremgangsmaate til fremstilling derav. NO904562L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/428,820 US5650261A (en) 1989-10-27 1989-10-27 Positive acting photoresist comprising a photoacid, a photobase and a film forming acid-hardening resin system

Publications (2)

Publication Number Publication Date
NO904562D0 NO904562D0 (no) 1990-10-23
NO904562L true NO904562L (no) 1991-04-29

Family

ID=23700535

Family Applications (1)

Application Number Title Priority Date Filing Date
NO90904562A NO904562L (no) 1989-10-27 1990-10-23 Positivt virkende fotoresist og fremgangsmaate til fremstilling derav.

Country Status (14)

Country Link
US (1) US5650261A (no)
EP (1) EP0425142A3 (no)
KR (1) KR910008493A (no)
CN (1) CN1054838A (no)
AU (1) AU642915B2 (no)
BR (1) BR9005430A (no)
CA (1) CA2027628A1 (no)
FI (1) FI905314A0 (no)
IE (1) IE903882A1 (no)
IL (1) IL96109A (no)
MX (1) MX173338B (no)
MY (1) MY106633A (no)
NO (1) NO904562L (no)
ZA (1) ZA908251B (no)

Families Citing this family (135)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2583364B2 (ja) * 1990-06-19 1997-02-19 三菱電機株式会社 感光性樹脂組成物
US5206117A (en) * 1991-08-14 1993-04-27 Labadie Jeffrey W Photosensitive polyamic alkyl ester composition and process for its use
US5576143A (en) * 1991-12-03 1996-11-19 Fuji Photo Film Co., Ltd. Light-sensitive composition
EP0555749B1 (en) * 1992-02-14 1999-05-19 Shipley Company Inc. Radiation sensitive compositions and processes
JP2635901B2 (ja) * 1992-03-13 1997-07-30 インターナショナル・ビジネス・マシーンズ・コーポレイション ポリイミドのネガティブ像形成方法
US5262280A (en) * 1992-04-02 1993-11-16 Shipley Company Inc. Radiation sensitive compositions
US5384229A (en) 1992-05-07 1995-01-24 Shipley Company Inc. Photoimageable compositions for electrodeposition
DE4226464B4 (de) * 1992-08-10 2005-06-02 Infineon Technologies Ag Positivresist
JP2654339B2 (ja) * 1992-11-24 1997-09-17 インターナショナル・ビジネス・マシーンズ・コーポレイション 感光性レジスト組成物及び基板上にレジスト像を形成する方法
JP3148426B2 (ja) * 1992-12-25 2001-03-19 クラリアント インターナショナル リミテッド パターン形成用材料
EP0622682B1 (en) 1993-04-28 1998-03-04 Hitachi Chemical Co., Ltd. Photosensitive resin composition
US5967030A (en) 1995-11-17 1999-10-19 Micron Technology, Inc. Global planarization method and apparatus
US6124371A (en) * 1996-02-22 2000-09-26 Dsm N.V. Anionic photocatalyst
EP1124158A1 (en) 1996-02-26 2001-08-16 Matsushita Electric Industrial Co., Ltd. Pattern forming material and pattern forming method
US5728664A (en) * 1996-04-15 1998-03-17 Ashland, Inc. Photoresist stripping compositions
US6140022A (en) * 1996-07-19 2000-10-31 Agfa-Gevaert, N.V. Radiation sensitive imaging element and a method for producing lithographic plates therewith
US5955244A (en) * 1996-08-20 1999-09-21 Quantum Corporation Method for forming photoresist features having reentrant profiles using a basic agent
US6190829B1 (en) * 1996-09-16 2001-02-20 International Business Machines Corporation Low “K” factor hybrid photoresist
DE69805559T2 (de) * 1997-02-20 2002-09-26 Matsushita Electric Ind Co Ltd Material zur Herstellung von Feinstrukturen
US6316363B1 (en) 1999-09-02 2001-11-13 Micron Technology, Inc. Deadhesion method and mechanism for wafer processing
US6331488B1 (en) * 1997-05-23 2001-12-18 Micron Technology, Inc. Planarization process for semiconductor substrates
US5962190A (en) * 1997-08-27 1999-10-05 E. I. Du Pont De Nemours And Company Photopolymerizable compositions having improved sidewall geometry and development latitude
JP3383564B2 (ja) * 1997-12-26 2003-03-04 株式会社東芝 パターン形成方法および感光性組成物
KR100271641B1 (ko) * 1998-01-14 2001-03-02 김영환 포토레지스트 패턴형성방법
US6168898B1 (en) * 1998-02-17 2001-01-02 Isola Laminate Systems Corp. Positive acting photodielectric composition
JP3796982B2 (ja) * 1998-06-02 2006-07-12 住友化学株式会社 ポジ型レジスト組成物
US6218316B1 (en) * 1998-10-22 2001-04-17 Micron Technology, Inc. Planarization of non-planar surfaces in device fabrication
GB9827798D0 (en) * 1998-12-17 1999-02-10 Agency Ind Science Techn Electron beam resist
JP2000194130A (ja) * 1998-12-25 2000-07-14 Clariant (Japan) Kk 感光性樹脂組成物
US6797451B2 (en) * 1999-07-30 2004-09-28 Hynix Semiconductor Inc. Reflection-inhibiting resin used in process for forming photoresist pattern
US6338934B1 (en) 1999-08-26 2002-01-15 International Business Machines Corporation Hybrid resist based on photo acid/photo base blending
KR100481601B1 (ko) * 1999-09-21 2005-04-08 주식회사 하이닉스반도체 광산 발생제와 함께 광염기 발생제를 포함하는 포토레지스트 조성물
DE19958966A1 (de) 1999-12-07 2001-06-13 Infineon Technologies Ag Erzeugung von Resiststrukturen
DE19958967A1 (de) * 1999-12-07 2001-06-13 Infineon Technologies Ag Erzeugung von Resiststrukturen
JP2001189253A (ja) * 1999-12-28 2001-07-10 Mitsubishi Electric Corp レジストパターン形成方法、レジストパターン形成方法に使用する上層材および半導体装置
KR100728462B1 (ko) * 2000-05-26 2007-06-13 아크조 노벨 엔.브이. 광활성가능한 코팅조성물
US6518172B1 (en) 2000-08-29 2003-02-11 Micron Technology, Inc. Method for applying uniform pressurized film across wafer
US6548226B2 (en) * 2001-02-09 2003-04-15 United Microelectronics Corp. Photolithographic process
US6664023B2 (en) * 2001-03-13 2003-12-16 International Business Machines Corporation Controlled aging of photoresists for faster photospeed
DE10120660B8 (de) * 2001-04-27 2006-09-28 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120674B4 (de) * 2001-04-27 2005-06-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120675B4 (de) * 2001-04-27 2005-07-21 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120661A1 (de) 2001-04-27 2002-11-21 Infineon Technologies Ag Photolackzusammensetzung und Verfahren zur Strukturierung einer Photolackschicht
DE10120673B4 (de) * 2001-04-27 2007-01-25 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120676B4 (de) * 2001-04-27 2005-06-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
TW576859B (en) * 2001-05-11 2004-02-21 Shipley Co Llc Antireflective coating compositions
JP4213366B2 (ja) * 2001-06-12 2009-01-21 Ａｚエレクトロニックマテリアルズ株式会社 厚膜レジストパターンの形成方法
DE10131488B4 (de) * 2001-06-29 2006-01-19 Infineon Technologies Ag Verfahren zur chemischen Nachverstärkung von Photoresists im UV-Bereich
US6806020B2 (en) * 2001-08-21 2004-10-19 Kodak Polychrome Graphics Llc Negative working imageable composition containing sulfonic acid
US7056639B2 (en) * 2001-08-21 2006-06-06 Eastman Kodak Company Imageable composition containing an infrared absorber with counter anion derived from a non-volatile acid
DE10153497B4 (de) * 2001-10-31 2006-04-06 Infineon Technologies Ag Verfahren zur Silylierung von Fotoresists im UV-Bereich
DE10153496B4 (de) * 2001-10-31 2007-01-04 Infineon Technologies Ag Verfahren zur Aromatisierung und Cycloaliphatisierung von Fotoresists im UV-Bereich
KR100824356B1 (ko) * 2002-01-09 2008-04-22 삼성전자주식회사 감광성 수지 조성물 및 이를 사용한 패턴의 형성방법
US7455955B2 (en) * 2002-02-27 2008-11-25 Brewer Science Inc. Planarization method for multi-layer lithography processing
JP3986911B2 (ja) * 2002-07-15 2007-10-03 松下電器産業株式会社 パターン形成材料及びパターン形成方法
GB0224529D0 (en) * 2002-10-22 2002-11-27 Isis Innovation Improvements in or relating to multiple exposures of photosensitive material
US6929904B2 (en) * 2002-11-14 2005-08-16 The University Of North Carolina At Chapel Hill Positive tone lithography with carbon dioxide development systems
CN100367113C (zh) * 2002-12-11 2008-02-06 三星电子株式会社 用于形成共轭聚合物图案的组合物和使用该组合物形成共轭聚合物图案的方法
US7365103B2 (en) * 2002-12-12 2008-04-29 Board Of Regents, The University Of Texas System Compositions for dark-field polymerization and method of using the same for imprint lithography processes
JP2004258070A (ja) * 2003-02-24 2004-09-16 Sumitomo Chem Co Ltd ポジ型感光性組成物
JP4303044B2 (ja) * 2003-06-23 2009-07-29 Ｎｅｃエレクトロニクス株式会社 化学増幅型レジスト組成物および該化学増幅型レジスト組成物を用いた半導体集積回路装置の製造方法
US7790231B2 (en) * 2003-07-10 2010-09-07 Brewer Science Inc. Automated process and apparatus for planarization of topographical surfaces
KR100611394B1 (ko) * 2003-11-20 2006-08-11 주식회사 하이닉스반도체 유기 반사 방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US20050215713A1 (en) * 2004-03-26 2005-09-29 Hessell Edward T Method of producing a crosslinked coating in the manufacture of integrated circuits
CN1758141B (zh) * 2004-05-18 2013-12-11 罗姆及海斯电子材料有限公司 与外涂光刻胶一起使用的涂料组合物
JP2006133315A (ja) * 2004-11-02 2006-05-25 Matsushita Electric Ind Co Ltd 平坦化材料、反射防止膜形成材料、及びこれらを用いた半導体装置の製造方法
KR100784337B1 (ko) 2004-11-12 2007-12-13 한국생명공학연구원 신규한 ｏ-아실옥심 유도체, 그의 제조방법 및 이를유효성분으로 하는 심장순환계 질환의 예방 및 치료용약학 조성물
US20070077452A1 (en) * 2005-10-04 2007-04-05 Jie Liu Organic light emitting devices having latent activated layers and methods of fabricating the same
US20070176167A1 (en) * 2006-01-27 2007-08-02 General Electric Company Method of making organic light emitting devices
FR2899502B1 (fr) * 2006-04-06 2009-04-10 Macdermid Printing Solutions E Dispositif de gaufrage, tel qu'un cylindre ou manchon
US8148055B2 (en) * 2006-06-30 2012-04-03 Infineon Technologies Ag Method for developing a photoresist
US7775785B2 (en) * 2006-12-20 2010-08-17 Brewer Science Inc. Contact planarization apparatus
US8153346B2 (en) 2007-02-23 2012-04-10 Fujifilm Electronic Materials, U.S.A., Inc. Thermally cured underlayer for lithographic application
JP2008286924A (ja) * 2007-05-16 2008-11-27 Panasonic Corp 化学増幅型レジスト材料、トップコート膜形成用材料及びそれらを用いたパターン形成方法
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
US7838198B2 (en) * 2007-12-13 2010-11-23 International Business Machines Corporation Photoresist compositions and method for multiple exposures with multiple layer resist systems
US7838200B2 (en) * 2007-12-13 2010-11-23 International Business Machines Corporation Photoresist compositions and method for multiple exposures with multiple layer resist systems
US8236476B2 (en) 2008-01-08 2012-08-07 International Business Machines Corporation Multiple exposure photolithography methods and photoresist compositions
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US8168691B2 (en) * 2009-02-09 2012-05-01 International Business Machines Corporation Vinyl ether resist formulations for imprint lithography and processes of use
US8574810B2 (en) * 2009-04-27 2013-11-05 Tokyo Electron Limited Dual tone development with a photo-activated acid enhancement component in lithographic applications
US8168109B2 (en) * 2009-08-21 2012-05-01 International Business Machines Corporation Stabilizers for vinyl ether resist formulations for imprint lithography
US9057951B2 (en) * 2009-08-26 2015-06-16 International Business Machines Corporation Chemically amplified photoresist composition and process for its use
US8216767B2 (en) 2009-09-08 2012-07-10 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning process and chemical amplified photoresist with a photodegradable base
US8956806B2 (en) * 2009-09-18 2015-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and patterning process
US8512939B2 (en) * 2009-09-25 2013-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist stripping technique
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
JP2011257499A (ja) * 2010-06-07 2011-12-22 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法及びパターン微細化処理剤
WO2012067741A1 (en) 2010-11-16 2012-05-24 3M Innovative Properties Company Uv curable anhydride-modified poly(isobutylene)
US8663407B2 (en) 2010-11-17 2014-03-04 3M Innovative Properties Company Isobutylene (Co)polymeric adhesive composition
US8629209B2 (en) 2010-12-02 2014-01-14 3M Innovative Properties Company Moisture curable isobutylene adhesive copolymers
EP2472320A2 (en) * 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Compositions comprising base-reactive component and processes for photolithography
US9599895B2 (en) * 2011-04-12 2017-03-21 Empire Technology Development Llc Lithography using photoresist with photoinitiator and photoinhibitor
JP5898985B2 (ja) 2011-05-11 2016-04-06 東京応化工業株式会社 レジストパターン形成方法
US8968990B2 (en) 2011-09-15 2015-03-03 Tokyo Ohka Kogyo Co., Ltd. Method of forming resist pattern
US9405200B2 (en) 2011-09-22 2016-08-02 Toyko Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
JP5715918B2 (ja) * 2011-09-22 2015-05-13 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
KR101936435B1 (ko) * 2011-09-22 2019-01-08 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물, 레지스트 패턴 형성 방법
JP5816505B2 (ja) * 2011-09-27 2015-11-18 東京応化工業株式会社 レジストパターン形成方法
JP5933364B2 (ja) 2011-11-09 2016-06-08 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
US9616460B2 (en) 2011-12-02 2017-04-11 Toyota Motor Engineering & Manufacturing North America, Inc. Terminate-on-demand cationic polymerization method for forming a two-dimensional coating
US8592137B2 (en) * 2011-12-16 2013-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for small trench patterning using chemical amplified photoresist compositions
JP5820719B2 (ja) 2011-12-21 2015-11-24 東京応化工業株式会社 レジストパターン形成方法
JP5898962B2 (ja) 2012-01-11 2016-04-06 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
WO2013130238A1 (en) 2012-02-29 2013-09-06 3M Innovative Properties Company Photobase generators as latent ionic crosslinkers for acrylic pressure-sensitive adhesives
WO2013151739A1 (en) 2012-04-03 2013-10-10 3M Innovative Properties Company Crosslinkable composition comprising photobase generators
US9005877B2 (en) 2012-05-15 2015-04-14 Tokyo Electron Limited Method of forming patterns using block copolymers and articles thereof
US8980538B2 (en) 2013-03-14 2015-03-17 Tokyo Electron Limited Chemi-epitaxy in directed self-assembly applications using photo-decomposable agents
US9147574B2 (en) 2013-03-14 2015-09-29 Tokyo Electron Limited Topography minimization of neutral layer overcoats in directed self-assembly applications
US8975009B2 (en) 2013-03-14 2015-03-10 Tokyo Electron Limited Track processing to remove organic films in directed self-assembly chemo-epitaxy applications
US20140273534A1 (en) 2013-03-14 2014-09-18 Tokyo Electron Limited Integration of absorption based heating bake methods into a photolithography track system
US9136110B2 (en) 2013-03-15 2015-09-15 Tokyo Electron Limited Multi-step bake apparatus and method for directed self-assembly lithography control
US10086537B2 (en) * 2013-05-08 2018-10-02 Minipumps, Llc Flexible manufacture of polymeric tubing
WO2015034690A1 (en) 2013-09-04 2015-03-12 Tokyo Electron Limited Uv-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly
US9793137B2 (en) 2013-10-20 2017-10-17 Tokyo Electron Limited Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines
US9349604B2 (en) 2013-10-20 2016-05-24 Tokyo Electron Limited Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
US20170097570A1 (en) * 2014-05-21 2017-04-06 Osaka University Resist patterning method, latent resist image forming device, and resist material
KR20170137882A (ko) 2015-04-16 2017-12-13 쓰리엠 이노베이티브 프로퍼티즈 캄파니 티올-에폭시 매트릭스를 갖는 양자점 물품
CN107532079B (zh) 2015-04-16 2020-10-23 3M创新有限公司 具有硫醇-烯烃-环氧基体的量子点制品
US10692757B2 (en) * 2015-05-28 2020-06-23 Intel Corporation Means to decouple the diffusion and solubility switch mechanisms of photoresists
US9947597B2 (en) 2016-03-31 2018-04-17 Tokyo Electron Limited Defectivity metrology during DSA patterning
US11021574B2 (en) 2016-12-02 2021-06-01 3M Innovative Properties Company Dual cure monomers
EP3725820B1 (en) 2019-04-16 2022-04-06 Henkel AG & Co. KGaA Use of functionalized alpha-angelica lactones
EP3747925A1 (en) 2019-06-07 2020-12-09 Henkel AG & Co. KGaA Radiation-curable composition by anionic polymerization
EP3798246B1 (en) 2019-09-27 2024-01-31 Henkel AG & Co. KGaA One component (1k) composition based on modified epoxy resin
CN111025862A (zh) * 2019-11-12 2020-04-17 常州微泰格电子科技有限公司 一种光刻处理方法
EP3831862B1 (en) 2019-12-04 2023-06-28 Henkel AG & Co. KGaA One component (1k) composition based on epoxy resin
EP3831863B1 (en) 2019-12-04 2023-07-05 Henkel AG & Co. KGaA One component (1k) composition based on epoxy resin
US20210271164A1 (en) * 2020-02-27 2021-09-02 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist composition and method of manufacturing a semiconductor device
EP3916033A1 (en) 2020-05-28 2021-12-01 Henkel AG & Co. KGaA One component (1k) composition based on epoxy resin
WO2022053890A1 (en) 2020-09-11 2022-03-17 3M Innovative Properties Company Investment casting compositions and methods
US20220111582A1 (en) 2020-10-13 2022-04-14 Cabot Corporation Conductive photo-curable compositions for additive manufacturing
CN112760063A (zh) * 2020-12-25 2021-05-07 深圳市撒比斯科技有限公司 一种粘合剂组合物
EP4332144A1 (en) 2022-09-05 2024-03-06 Henkel AG & Co. KGaA One component (1k) curable adhesive composition

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3779758A (en) * 1969-03-25 1973-12-18 Photocircuits Corp Photosensitive process for producing printed circuits employing electroless deposition
IT951496B (it) * 1971-06-28 1973-06-30 Ibm Composizione fotoresistente posi tiva a base epossidica partico larmente per la stampa di micro circuiti
US4343885A (en) * 1978-05-09 1982-08-10 Dynachem Corporation Phototropic photosensitive compositions containing fluoran colorformer
DE3337315A1 (de) * 1982-10-13 1984-04-19 Tokyo Ohka Kogyo Co., Ltd., Kawasaki, Kanagawa Zweifach-lichtempfindliche zusammensetzungen und verfahren zur erzeugung bildmustergemaesser photoresistschichten
US5084372A (en) * 1982-12-09 1992-01-28 Hoechst Celanese Corporation Process for preparing photographic elements utilizing light-sensitive layer containing cyclical acid amide thermo-crosslinking compound
JPS62102241A (ja) * 1985-10-30 1987-05-12 Tokyo Ohka Kogyo Co Ltd 感光性組成物
DE3540950A1 (de) * 1985-11-19 1987-05-21 Basf Ag Durch photopolymerisation vernetzbare gemische
CA1307695C (en) * 1986-01-13 1992-09-22 Wayne Edmund Feely Photosensitive compounds and thermally stable and aqueous developablenegative images
JPS63149640A (ja) * 1986-12-12 1988-06-22 Konica Corp 感光性組成物および感光性平版印刷版
US4775609A (en) * 1987-05-18 1988-10-04 Hoescht Celanese Corporation Image reversal

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MY106633A (en) 1995-06-30
CN1054838A (zh) 1991-09-25
IL96109A (en) 1995-03-15
KR910008493A (ko) 1991-05-31
EP0425142A2 (en) 1991-05-02
IL96109A0 (en) 1991-07-18
NO904562D0 (no) 1990-10-23
EP0425142A3 (en) 1991-10-16
BR9005430A (pt) 1991-09-17
MX173338B (es) 1994-02-17
CA2027628A1 (en) 1991-04-28
ZA908251B (en) 1991-07-31
IE903882A1 (en) 1991-05-08
AU6469890A (en) 1991-05-02
FI905314A0 (fi) 1990-10-26
AU642915B2 (en) 1993-11-04
US5650261A (en) 1997-07-22

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