ATE93979T1 - Lichtempfindliche zusammensetzungen mit phenolkunststoffen und quinondiariden. - Google Patents

Lichtempfindliche zusammensetzungen mit phenolkunststoffen und quinondiariden.

Info

Publication number
ATE93979T1
ATE93979T1 AT88870188T AT88870188T ATE93979T1 AT E93979 T1 ATE93979 T1 AT E93979T1 AT 88870188 T AT88870188 T AT 88870188T AT 88870188 T AT88870188 T AT 88870188T AT E93979 T1 ATE93979 T1 AT E93979T1
Authority
AT
Austria
Prior art keywords
formation
ammonium salt
image
silicon compound
photosensitive compositions
Prior art date
Application number
AT88870188T
Other languages
English (en)
Inventor
Bruno Roland
Jan Vandendriesche
Catherine Jakus
Original Assignee
Ucb Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=10628673&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE93979(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Ucb Sa filed Critical Ucb Sa
Application granted granted Critical
Publication of ATE93979T1 publication Critical patent/ATE93979T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT88870188T 1987-12-18 1988-12-15 Lichtempfindliche zusammensetzungen mit phenolkunststoffen und quinondiariden. ATE93979T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB878729510A GB8729510D0 (en) 1987-12-18 1987-12-18 Photosensitive compositions containing phenolic resins & diazoquinone compounds
EP88870188A EP0323427B2 (de) 1987-12-18 1988-12-15 Lichtempfindliche Zusammensetzungen mit Phenolkunststoffen und Quinondiariden

Publications (1)

Publication Number Publication Date
ATE93979T1 true ATE93979T1 (de) 1993-09-15

Family

ID=10628673

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88870188T ATE93979T1 (de) 1987-12-18 1988-12-15 Lichtempfindliche zusammensetzungen mit phenolkunststoffen und quinondiariden.

Country Status (9)

Country Link
US (1) US5116715A (de)
EP (1) EP0323427B2 (de)
JP (1) JP2729069B2 (de)
KR (1) KR960010025B1 (de)
AT (1) ATE93979T1 (de)
DE (1) DE3883738T3 (de)
GB (1) GB8729510D0 (de)
IE (1) IE63238B1 (de)
IL (1) IL88671A (de)

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US5756256A (en) * 1992-06-05 1998-05-26 Sharp Microelectronics Technology, Inc. Silylated photo-resist layer and planarizing method
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US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
US5550007A (en) * 1993-05-28 1996-08-27 Lucent Technologies Inc. Surface-imaging technique for lithographic processes for device fabrication
US5429673A (en) * 1993-10-01 1995-07-04 Silicon Resources, Inc. Binary vapor adhesion promoters and methods of using the same
US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
US5521052A (en) * 1994-12-30 1996-05-28 Hoechst Celanese Corporation Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom
US5614352A (en) * 1994-12-30 1997-03-25 Hoechst Celanese Corporation Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin
ES2147382T3 (es) * 1995-06-22 2000-09-01 Yuri Gudimenko Modificacion superficial de polimeros y materiales basados en carbono.
US5618655A (en) * 1995-07-17 1997-04-08 Olin Corporation Process of reducing trace levels of metal impurities from resist components
US5623042A (en) * 1995-07-19 1997-04-22 Olin Corporation Process for reducing trace levels of metallic impurities in cyclized polyisoprene resin
DE19533608A1 (de) * 1995-09-11 1997-03-13 Basf Ag Positivarbeitendes strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Reliefstrukturen
US5693749A (en) * 1995-09-20 1997-12-02 Hoechst Celanese Corporation Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom
US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US5656413A (en) * 1995-09-28 1997-08-12 Hoechst Celanese Corporation Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom
US5962183A (en) * 1995-11-27 1999-10-05 Clariant Finance (Bvi) Limited Metal ion reduction in photoresist compositions by chelating ion exchange resin
US5707783A (en) * 1995-12-04 1998-01-13 Complex Fluid Systems, Inc. Mixtures of mono- and DI- or polyfunctional silanes as silylating agents for top surface imaging
US5665517A (en) * 1996-01-11 1997-09-09 Hoechst Celanese Corporation Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom
US5936071A (en) * 1998-02-02 1999-08-10 Clariant Finance (Bvi) Limited Process for making a photoactive compound and photoresist therefrom
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
WO2000077575A1 (en) 1999-06-10 2000-12-21 Alliedsignal Inc. Spin-on-glass anti-reflective coatings for photolithography
US6605519B2 (en) * 2001-05-02 2003-08-12 Unaxis Usa, Inc. Method for thin film lift-off processes using lateral extended etching masks and device
AU2002227106A1 (en) 2001-11-15 2003-06-10 Honeywell International Inc. Spin-on anti-reflective coatings for photolithography
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
JP4933063B2 (ja) * 2005-06-24 2012-05-16 東京応化工業株式会社 パターン形成方法
KR100760110B1 (ko) * 2005-08-23 2007-09-18 후지쯔 가부시끼가이샤 레지스트 조성물, 레지스트 패턴의 형성 방법, 반도체 장치및 그의 제조 방법
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング

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DE3144480A1 (de) * 1981-11-09 1983-05-19 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes lichtempfindliches kopiermaterial
EP0161660B1 (de) * 1984-05-14 1991-10-09 Kabushiki Kaisha Toshiba Verfahren zur Herstellung von Schutzlackbildern und Zusammensetzung dafür
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Also Published As

Publication number Publication date
US5116715A (en) 1992-05-26
EP0323427A2 (de) 1989-07-05
IE63238B1 (en) 1995-04-05
IL88671A0 (en) 1989-07-31
JPH021857A (ja) 1990-01-08
DE3883738T3 (de) 1999-09-02
KR890010614A (ko) 1989-08-09
DE3883738D1 (de) 1993-10-07
GB8729510D0 (en) 1988-02-03
JP2729069B2 (ja) 1998-03-18
IL88671A (en) 1992-08-18
KR960010025B1 (ko) 1996-07-25
DE3883738T2 (de) 1994-03-10
EP0323427B1 (de) 1993-09-01
EP0323427A3 (en) 1989-07-19
EP0323427B2 (de) 1999-03-03
IE883739L (en) 1989-06-18

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