KR890008606A - 포지티브-워킹 포토레지스트 조성물 - Google Patents

포지티브-워킹 포토레지스트 조성물 Download PDF

Info

Publication number
KR890008606A
KR890008606A KR1019880015613A KR880015613A KR890008606A KR 890008606 A KR890008606 A KR 890008606A KR 1019880015613 A KR1019880015613 A KR 1019880015613A KR 880015613 A KR880015613 A KR 880015613A KR 890008606 A KR890008606 A KR 890008606A
Authority
KR
South Korea
Prior art keywords
sulfonic acid
positive
compound
acid compound
cresol
Prior art date
Application number
KR1019880015613A
Other languages
English (en)
Other versions
KR910004844B1 (ko
Inventor
히데가쯔 고하라
요시유끼 사또후
미쯔오 야부따
요시아끼 아라이
노부오 도구다께
고이찌 다까하시
도시마사 나까야마
Original Assignee
이또오 다께오
도오교오오오까고오교오 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62299581A external-priority patent/JP2618940B2/ja
Priority claimed from JP63002140A external-priority patent/JP2618947B2/ja
Application filed by 이또오 다께오, 도오교오오오까고오교오 가부시기가이샤 filed Critical 이또오 다께오
Publication of KR890008606A publication Critical patent/KR890008606A/ko
Application granted granted Critical
Publication of KR910004844B1 publication Critical patent/KR910004844B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

내용 없음

Description

포지티브-워킹 포토레지스트 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. 포지티브-워킹 감광성 조성물은 (A) 크레졸노보락수지(이것의 크레졸부분은 10~45%의 m-크레졸과 90~55%의 P-크레졸 부분으로 구성된다), (B) 감광성제, 이것은 2,3,4-트리히드록시 벤조 페논, 2,3,4,4'-테트라히드록시 벤조페논 및 2,2',4,4'-테트라히드록시 벤조페논으로 이루어진군에서 선택된 폴리히드록시 벤조페논 화합물과 1,2-나프토퀴논 디아지드-4-술폰산, 1,2-나프토퀴논디아지드-5-술폰산에서 선택된 술폰산과의 술폰산에스테르 화합물 또는 술폰산 에스테르 화합물류의 혼합이며 여기서 적어도 폴리히드록시 벤조페논 화합물의 ε0몰%가 술폰산 화합물과 에스테르되는 이들의 분자내 3개 또는 4개의 히드록시기를 지닌다.가 혼합된 것을 포함하는 것을 특징으로 하는 포지티브-워킹포토레지스트 조성물.
  2. 제1항에 있어서, 여기서, 술폰산 화합물은 20~ε0중량%의 1,2-나프토퀴논디아지드-4-술폰산 화합물과 ε0~20중량%의 1,2-나프토퀴논 디아지드-5-술폰산화합물과의 혼합인것을 특징으로 하는 포지티브-워킹 포토레지스트 조성물.
  3. 제2항에 있어서, 여기서 술폰산 화합물은 40~60중량%의 1,2-나프토퀴논디아지드-4-술폰산화합물과 60~40중량%의 1,2-나프토퀴논디아지드-5-술폰산 화합물과의 혼합인 것을 특징으로 하는 포지티브-워킹 포토레지스트 조성물.
  4. 제1항에 있어서, 여기서 성분(B)로서 감광성제의 양은 성분(A)로서 크레졸 노보락 수지의 100중량부당 10~30중량부인 것을 특징으로 하는 포지티브-워킹 포토레지스트 조성물.
  5. 기판표면상에 패턴레지스트층을 형성하는 방법은, (a) 유기용매에 용해된 포지티브-워킹감광성 조성물로 기판표면을 도포하는 단계, 여기서 포지티브-워킹감광성 조성물은 다음을 포함한다. (A) 크레졸 노보락수지-크레졸 부분은 10~45%의 m-크레졸 부분과 90~55%의 P-크레졸 부분으로 구성된다. (B)감광성제-이것은 2,3,4-트리히드록시 벤조페논, 2,3,4,4′-테트라히드록시 벤조페논 및 2,2′,4,4′-테트라히드록시 벤조페논으로 이루어진 군에서 선택된 폴리히드록시 벤조페논 화합물과 1,2-나프토퀴논디아지드-4-술폰산화합물과 1,2-나프토퀴논디아지드-5-술폰산 화합물로 이루어진 군에서 선택된 술폰산과의 술폰산 에스테르 화합물또는 술폰산 에스테르 화합물류의 혼합이며, 여기서 폴리히드록시 벤조페논 화합물의 적어도 ε0몰%는 감광성 조성물의 도포층을 형성하기 위해 술폰산 화합물로 에스테르화되는 이들의 분자내 3 또는 4개의 히드록시기를 지닌다. (b) 도포층을 건조시키는 단계. (c)패턴양식 숨은 영상을 형성하기 위해 365㎚의 주파장의 자외선광에 감광성 조성물 패턴양식의 도포층을 노광하는 단계. (d) 자외선광에 노출된 면적에서 도포층의 감광성 조성물을 용해하여 현상액으로 숨은 영상을 현상하는 단계를 포함하는 것을 특징으로 하는 포지티브-워킹 포토레지스트 조성물.
  6. 제5항에 있어서, 여기서 술폰산화합물은 20~ε0중량%의 1,2-나프토퀴논디아지드-4-술폰산화합물과 ε0~20중량%의 1,2-나프토퀴논디아지드-5-술폰산 화합물의 혼합인 것을 특징으로 하는 포지티브-워킹 포토레지스트 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880015613A 1987-11-27 1988-11-26 포지티브-워킹 포토레지스트 조성물 KR910004844B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP299,581 1987-11-27
JP62-299581 1987-11-27
JP62299581A JP2618940B2 (ja) 1987-11-27 1987-11-27 ポジ型ホトレジスト組成物
JP63-2140 1988-01-08
JP2,410 1988-01-08
JP63002140A JP2618947B2 (ja) 1988-01-08 1988-01-08 ポジ型ホトレジスト組成物

Publications (2)

Publication Number Publication Date
KR890008606A true KR890008606A (ko) 1989-07-12
KR910004844B1 KR910004844B1 (ko) 1991-07-13

Family

ID=26335464

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880015613A KR910004844B1 (ko) 1987-11-27 1988-11-26 포지티브-워킹 포토레지스트 조성물

Country Status (3)

Country Link
KR (1) KR910004844B1 (ko)
DE (1) DE3839906A1 (ko)
GB (1) GB2212933B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100318092B1 (ko) * 1999-08-05 2001-12-22 대한민국(관리청:특허청장, 승계청:산업자원부 기술표준원장) Ｐｓ판용 나프토퀴논-디아지드계 에스테르 감광재료

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US5069996A (en) * 1989-07-24 1991-12-03 Ocg Microelectronic Materials, Inc. Process for developing selected positive photoresists
CA2042735A1 (en) * 1990-05-25 1991-11-26 Mark A. Spak Image reversal negative working photoresist
JPH0627655A (ja) * 1990-11-28 1994-02-04 Hoechst Celanese Corp ポジ型フォトレジスト組成物
JPH04306658A (ja) * 1990-11-28 1992-10-29 Hoechst Celanese Corp 陽画フォトレジスト組成物
DE4111444A1 (de) * 1991-04-09 1992-10-15 Hoechst Ag Naphthochinondiazid-sulfonsaeure-mischester enthaltendes gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
KR950000482B1 (ko) * 1991-04-30 1995-01-20 가부시키가이샤 도시바 패턴형성용 레지스트
US5362599A (en) * 1991-11-14 1994-11-08 International Business Machines Corporations Fast diazoquinone positive resists comprising mixed esters of 4-sulfonate and 5-sulfonate compounds
JP2935223B2 (ja) * 1992-04-14 1999-08-16 東京応化工業株式会社 レジストパターン形成用材料の製造方法及びタンタルのパターン形成方法
US5332647A (en) * 1992-08-26 1994-07-26 Tokyo Ohka Kogyo Co., Ltd. Positive-working quinone diazide composition containing N,N',N"-substituted isocyanurate compound and associated article
IT1275432B (it) * 1995-05-19 1997-08-07 Plurimetal Srl Composizioni fotosensibili per stampa offset ad acidita' controllata
KR100323831B1 (ko) * 1999-03-30 2002-02-07 윤종용 포토레지스트 조성물, 이의 제조 방법 및 이를 사용한 패턴의 형성방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4348471A (en) * 1981-06-15 1982-09-07 Polychrome Corporation Positive acting composition yielding pre-development high visibility image after radiation exposure comprising acid free novolak, diazo oxide and acid sensitive dyestuff
EP0070624B1 (en) * 1981-06-22 1986-11-20 Philip A. Hunt Chemical Corporation Novolak resin and a positive photoresist composition containing the same
DE3127754A1 (de) * 1981-07-14 1983-02-03 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch auf basis von o-naphthochinondiaziden und daraus hergestelltes lichtempfindliches kopiermaterial
JPS61185741A (ja) * 1985-02-13 1986-08-19 Mitsubishi Chem Ind Ltd ポジ型フオトレジスト組成物
JPH0650396B2 (ja) * 1985-08-09 1994-06-29 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP2622267B2 (ja) * 1988-03-23 1997-06-18 日立化成工業株式会社 感光性樹脂組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100318092B1 (ko) * 1999-08-05 2001-12-22 대한민국(관리청:특허청장, 승계청:산업자원부 기술표준원장) Ｐｓ판용 나프토퀴논-디아지드계 에스테르 감광재료

Also Published As

Publication number Publication date
DE3839906A1 (de) 1989-06-08
KR910004844B1 (ko) 1991-07-13
GB2212933A (en) 1989-08-02
GB2212933B (en) 1991-10-16
GB8827542D0 (en) 1988-12-29

Similar Documents

Publication Publication Date Title
KR950000482B1 (ko) 패턴형성용 레지스트
US4738915A (en) Positive-working O-quinone diazide photoresist composition with 2,3,4-trihydroxybenzophenone
KR890008606A (ko) 포지티브-워킹 포토레지스트 조성물
US6117623A (en) Remover solvent for partial removal of photoresist layer
KR870011504A (ko) 신규의 혼합 에스테르-함유 감광제 조성물
US4882260A (en) Positive-working photosensitive quinone diazide composition with alkali insoluble dye and alkali soluble dye
KR970076087A (ko) 포지티브형 감광성 수지조성물과 이를 이용한 전자장치
US5215856A (en) Tris-(hydroxyphenyl) lower alkane compounds as sensitivity enhancers for o-quinonediazide containing radiation-sensitive compositions and elements
KR890014613A (ko) 혼합알데히드 노볼락수지와 이것으로 제조한 고콘트라스트 및 고열안정성의 양성 광레지스트
DE69301273T2 (de) Positiv arbeitende Photolackzusammensetzung
KR930006500A (ko) 감광성 수지조성물 및 이를 사용한 패턴의 형성 방법
KR900702421A (ko) 주형 용매로서 에틸 락테이트와 에틸 3-에톡시 프로피오네이트의 선택된 혼합물을 사용하는 포지티브 작용성 감광성 내식막
US6068962A (en) Positive resist composition
US5346808A (en) Positive image formation utilizing o-quinonediazide composition including selected phenolic derivatives of 4-(4-hydroxyphenyl)-cyclohexanone
US5069996A (en) Process for developing selected positive photoresists
EP0561625B1 (en) Polylactide compounds as sensitivity enhancers for radiation sensitive mixtures
US5284737A (en) Process of developing an image utilizing positive-working radiation sensitive mixtures containing alkali-soluble binder, o-quinonediazide photoactive compound and blankophor FBW actinic dye
KR910005064B1 (ko) 포지티브-워킹 감광성조성물
US5273856A (en) Positive working photoresist composition containing mid or near UV radiation sensitive quinone diazide and sulfonic acid ester of imide or oxime which does not absorb mid or near UV radiation
DE69228358T2 (de) Schnelle, positiv arbeitende Resists mit Diazochinonen
US5401617A (en) Method for forming positive patterned resist layer on tantalum substrate utilizing quinone diazide composition with aromatic hydroxy additive
US20020090567A1 (en) Positive-working chemical-amplification photoresist composition and method for forming a resist pattern using the same
KR890007120A (ko) 염료를 함유하는 양성-작용성 감광성 조성물 및 이러한 조성물로부터 제조된 양성-작용성 감광성 기록물질
EP0265375B1 (de) Photoresist-Zusammensetzungen
JPH03158855A (ja) ポジ型ホトレジスト組成物

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080701

Year of fee payment: 18

EXPY Expiration of term