KR970059318A - 단결정 인상 방법 및 그 실행 장치 - Google Patents

단결정 인상 방법 및 그 실행 장치 Download PDF

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Publication number
KR970059318A
KR970059318A KR1019970000447A KR19970000447A KR970059318A KR 970059318 A KR970059318 A KR 970059318A KR 1019970000447 A KR1019970000447 A KR 1019970000447A KR 19970000447 A KR19970000447 A KR 19970000447A KR 970059318 A KR970059318 A KR 970059318A
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South Korea
Prior art keywords
raw material
crucible
airtight container
pulling method
suspended
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KR1019970000447A
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English (en)
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KR100441357B1 (ko
Inventor
다까시 아따미
히로아끼 다구찌
히사시 후루야
미찌오 기다
Original Assignee
나가사와 마사유끼
미쯔비시 마테리알 실리콘 가부시끼가이샤
아끼모또 유미
미쯔비시 마테리알 가부시끼가이샤
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Priority claimed from JP00337796A external-priority patent/JP3750172B2/ja
Priority claimed from JP8004407A external-priority patent/JPH09194287A/ja
Application filed by 나가사와 마사유끼, 미쯔비시 마테리알 실리콘 가부시끼가이샤, 아끼모또 유미, 미쯔비시 마테리알 가부시끼가이샤 filed Critical 나가사와 마사유끼
Publication of KR970059318A publication Critical patent/KR970059318A/ko
Application granted granted Critical
Publication of KR100441357B1 publication Critical patent/KR100441357B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

본 발명은 기밀용기와 상호 연통된 외부 도가니 및 내부 도가니를 구비하고 기밀 용기 내부에 있으며 반도체 용융물을 저장하는 이중 도가니와, 기밀 용기의 상부로부터 현수되고 입상 또는 분상 원료가 하단부 개구로부터 외부 도가니 내의 반도체 용융물로 첨가될 수 있도록 위치된 원료 공급관을 포함하며, 원료는 격납된 용기를 향해 유동하는 불활성 가스와 함께 원료 공급관 내로 투입되는 단결정 인상 방법에 있어서, 원료는 불활성 가스의 유량[N(ℓ/min·㎠)]이 0.0048P+0.0264〈N〈0.07P[여기서, P(Torr)는 기밀 용기 내압이다]의 범위 내에 있는 조건 하에서 투입되는 것을 특징으로 하는 단결정 인상 방법이다.

Description

단결정 인상 방법 및 그 실행 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일 실시예에 채용된 단결정 인상 장치를 도시한 도면.

Claims (3)

  1. 기밀 용기와, 상호 연통된 외부 도가니 및 내부 도가니를 구비하고 기밀 용기 내부에 있으며 반도체 응용물을 저장하는 이중 도가니와, 기밀 용기의 상부로부터 현수되고 입상 또는 분상 원료가 하단부 개구로부터외부 도가니 내의 반도체 용융물로 첨가될 수 있도록 위치된 원료 공급관을 포함하며, 원료는 격납된 용기를 향해 유동하는 불활성 가스와 함께 원료 공급관 내로 투입되는 단결정 인상 방법에 있어서, 원료는 불활성 가스의 유량 [N(ℓ/min·㎠)]이 0.0048P+0.0264〈N〈0.07P[여기서, P(Torr)는 기밀 용기 내압이다]의 범위 내에 있는 조건 하에서 투입되는 것을 특징으로 하는 단결정 인상 방법이다.
  2. 기밀 용기와, 상호 연통된 외부 도가니 및 내부 도가니를 구비하고 기밀 용기 내부에 있으며 반도체 응용물을 저장하는 이중 도가니와, 기밀 용기의 상부로부터 현수되고 입상 또는 분상 원료가 하단부 개구로부터 내부 도가니와 외부 도가니 사이의 반도체 용융물로 구역으로 첨가될 수 있도록 위치된 원료 공급관을 포함하는단결절 인상 방법에 있어서, 원료가 공급되는 부분의 온도 (Tm)가 Ts+50〈Tm〈Ts+100[여기서, Ts(℃)는 고체-액체 경계 온도]의 범위 내에 있는 조건 하에서,외부 도가니와 내부 도가니 사이의 구역에 저장된 반도체 용융물 중량(W(㎏)]은 W850.3K - 5[여기서, K8520이며, K(g/min)는 원료 공급관으로부터 공급된 원료량이다]의 범위 내에 있는 것을 특징으로 하는 단결정 인상 방법.
  3. 제1항 또는 제2항에 따른 단결 인상 방법을 실행하는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970000447A 1996-01-11 1997-01-10 단결정인상방법및그실행장치 KR100441357B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP96-003377 1996-01-11
JP00337796A JP3750172B2 (ja) 1996-01-11 1996-01-11 単結晶引上方法
JP96-004407 1996-01-12
JP8004407A JPH09194287A (ja) 1996-01-12 1996-01-12 単結晶引上装置

Publications (2)

Publication Number Publication Date
KR970059318A true KR970059318A (ko) 1997-08-12
KR100441357B1 KR100441357B1 (ko) 2004-09-18

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Country Link
US (1) US5891245A (ko)
KR (1) KR100441357B1 (ko)
CN (1) CN1138878C (ko)
DE (1) DE19700498B4 (ko)
TW (1) TW440613B (ko)

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KR20150107540A (ko) 2014-03-14 2015-09-23 (주)기술과가치 잉곳 제조 장치
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JP7216340B2 (ja) * 2019-09-06 2023-02-01 株式会社Sumco シリコン単結晶の育成方法およびシリコン単結晶の引き上げ装置
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US11111597B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
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Also Published As

Publication number Publication date
US5891245A (en) 1999-04-06
KR100441357B1 (ko) 2004-09-18
CN1165208A (zh) 1997-11-19
TW440613B (en) 2001-06-16
DE19700498A1 (de) 1997-07-17
CN1138878C (zh) 2004-02-18
DE19700498B4 (de) 2008-11-20

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