KR960034484A - 실리콘 단결정의 육성 - Google Patents
실리콘 단결정의 육성 Download PDFInfo
- Publication number
- KR960034484A KR960034484A KR1019960008025A KR19960008025A KR960034484A KR 960034484 A KR960034484 A KR 960034484A KR 1019960008025 A KR1019960008025 A KR 1019960008025A KR 19960008025 A KR19960008025 A KR 19960008025A KR 960034484 A KR960034484 A KR 960034484A
- Authority
- KR
- South Korea
- Prior art keywords
- melt
- single crystal
- crystal
- growth interface
- growing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
단결정을 융액으로부터 인상할때, 도가니의 저면에서와 결정의 성장계면에서의 온도차 △T를 제어하여 다음식에 의해 정의된 레일레이 상수 Ra를 5×105-4×107의 범위내로 유지한다:
Ra=gㆍβㆍ△TㆍL/κㆍν
(상기 식에서, g는 중력가속도, β는 융액의 부피팽창계수, L은 융액의 깊이, κ는 열확산율, ν는 동점성도를 나타낸다.)
결정의 성장계면에서의 융액의 대류 방식이 부드러운 난류의 영역으로 일정하게 유지되기 때문에, 단결정은 성장중인 단결정에로 융액내의 불순물 분포를 전달하지 않는 안정화된 온도조건하에 육성된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (1)
- 도가니에 수용되는 융액을 제공하고, 상기 도가니 저면에서와 결정의 성장계면에서의 온도차△T를 제어하여 다음식: Ra=gㆍβㆍ△TㆍL/κㆍν에 의해 정의된 레일레이 상수 Ra를 5×105-4×107의 범위내로 유지하고(상기 식에서, g는 중력가속도, β는 융액의 부피팽창계수, L은 융액의 깊이, κ는 열확산률, ν는 동점성도를 나타낸다), 부드러운 난류상태로 유지된 상기 융액으로부터 단결정을 인상하는 것으로 이루어진 Si단결정을 육성하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP95-91432 | 1995-03-24 | ||
JP7091432A JP2760957B2 (ja) | 1995-03-24 | 1995-03-24 | 融液中の対流場を制御した単結晶育成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960034484A true KR960034484A (ko) | 1996-10-22 |
KR100255780B1 KR100255780B1 (ko) | 2000-05-01 |
Family
ID=14026216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960008025A KR100255780B1 (ko) | 1995-03-24 | 1996-03-23 | 실리콘 단결정의 육성 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5683504A (ko) |
EP (1) | EP0733725B1 (ko) |
JP (1) | JP2760957B2 (ko) |
KR (1) | KR100255780B1 (ko) |
DE (1) | DE69606449T2 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19753477A1 (de) * | 1997-12-02 | 1999-06-10 | Wacker Siltronic Halbleitermat | Verfahren und Heizvorrichtung zum Aufschmelzen von Halbleitermaterial |
US6548886B1 (en) * | 1998-05-01 | 2003-04-15 | Wacker Nsce Corporation | Silicon semiconductor wafer and method for producing the same |
JP2000044387A (ja) | 1998-07-27 | 2000-02-15 | Nippon Steel Corp | シリコン単結晶製造方法 |
WO2000061840A1 (fr) * | 1999-04-14 | 2000-10-19 | Oleg Alexeevich Remizov | Procédé de production de silicium monocristallin |
JP4567251B2 (ja) * | 2001-09-14 | 2010-10-20 | シルトロニック・ジャパン株式会社 | シリコン半導体基板およびその製造方法 |
US7125450B2 (en) * | 2002-11-12 | 2006-10-24 | Memc Electronic Materials, Inc. | Process for preparing single crystal silicon using crucible rotation to control temperature gradient |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2059932B (en) * | 1979-09-20 | 1983-10-12 | Sony Corp | Solidification processes |
JPS5842296A (ja) * | 1981-09-07 | 1983-03-11 | クラリオン株式会社 | 印刷配線基板のはんだ付け方法 |
US4565671A (en) * | 1983-08-05 | 1986-01-21 | Kabushiki Kaisha Toshiba | Single crystal manufacturing apparatus |
JPS6144797A (ja) * | 1984-08-10 | 1986-03-04 | Toshiba Corp | 単結晶育成装置およびその制御方法 |
US4971652A (en) * | 1989-12-18 | 1990-11-20 | General Electric Company | Method and apparatus for crystal growth control |
US5162072A (en) * | 1990-12-11 | 1992-11-10 | General Electric Company | Apparatus and method for control of melt flow pattern in a crystal growth process |
-
1995
- 1995-03-24 JP JP7091432A patent/JP2760957B2/ja not_active Expired - Fee Related
-
1996
- 1996-03-20 DE DE69606449T patent/DE69606449T2/de not_active Expired - Fee Related
- 1996-03-20 EP EP96104453A patent/EP0733725B1/en not_active Expired - Lifetime
- 1996-03-22 US US08/621,054 patent/US5683504A/en not_active Expired - Fee Related
- 1996-03-23 KR KR1019960008025A patent/KR100255780B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH08259379A (ja) | 1996-10-08 |
DE69606449D1 (de) | 2000-03-09 |
JP2760957B2 (ja) | 1998-06-04 |
US5683504A (en) | 1997-11-04 |
EP0733725B1 (en) | 2000-02-02 |
KR100255780B1 (ko) | 2000-05-01 |
DE69606449T2 (de) | 2000-09-21 |
EP0733725A3 (en) | 1997-05-07 |
EP0733725A2 (en) | 1996-09-25 |
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