KR960034484A - 실리콘 단결정의 육성 - Google Patents

실리콘 단결정의 육성 Download PDF

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Publication number
KR960034484A
KR960034484A KR1019960008025A KR19960008025A KR960034484A KR 960034484 A KR960034484 A KR 960034484A KR 1019960008025 A KR1019960008025 A KR 1019960008025A KR 19960008025 A KR19960008025 A KR 19960008025A KR 960034484 A KR960034484 A KR 960034484A
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KR
South Korea
Prior art keywords
melt
single crystal
crystal
growth interface
growing
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KR1019960008025A
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English (en)
Other versions
KR100255780B1 (ko
Inventor
고지 이즈노메
소로쿠 가와니시
신지 도가와
아츠시 이카리
히토시 사사키
시게유키 기무라
Original Assignee
고지 이즈노메
마츠다이라 히로미치
소로쿠 가와니시
신기쥬츠 지교오단
신지 도가와
아츠시 이카리
히토시 사사키
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=14026216&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR960034484(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 고지 이즈노메, 마츠다이라 히로미치, 소로쿠 가와니시, 신기쥬츠 지교오단, 신지 도가와, 아츠시 이카리, 히토시 사사키 filed Critical 고지 이즈노메
Publication of KR960034484A publication Critical patent/KR960034484A/ko
Application granted granted Critical
Publication of KR100255780B1 publication Critical patent/KR100255780B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

단결정을 융액으로부터 인상할때, 도가니의 저면에서와 결정의 성장계면에서의 온도차 △T를 제어하여 다음식에 의해 정의된 레일레이 상수 Ra를 5×105-4×107의 범위내로 유지한다:
Ra=gㆍβㆍ△TㆍL/κㆍν
(상기 식에서, g는 중력가속도, β는 융액의 부피팽창계수, L은 융액의 깊이, κ는 열확산율, ν는 동점성도를 나타낸다.)
결정의 성장계면에서의 융액의 대류 방식이 부드러운 난류의 영역으로 일정하게 유지되기 때문에, 단결정은 성장중인 단결정에로 융액내의 불순물 분포를 전달하지 않는 안정화된 온도조건하에 육성된다.

Description

실리콘 단결정의 육성
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (1)

  1. 도가니에 수용되는 융액을 제공하고, 상기 도가니 저면에서와 결정의 성장계면에서의 온도차△T를 제어하여 다음식: Ra=gㆍβㆍ△TㆍL/κㆍν에 의해 정의된 레일레이 상수 Ra를 5×105-4×107의 범위내로 유지하고(상기 식에서, g는 중력가속도, β는 융액의 부피팽창계수, L은 융액의 깊이, κ는 열확산률, ν는 동점성도를 나타낸다), 부드러운 난류상태로 유지된 상기 융액으로부터 단결정을 인상하는 것으로 이루어진 Si단결정을 육성하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960008025A 1995-03-24 1996-03-23 실리콘 단결정의 육성 KR100255780B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-91432 1995-03-24
JP7091432A JP2760957B2 (ja) 1995-03-24 1995-03-24 融液中の対流場を制御した単結晶育成方法

Publications (2)

Publication Number Publication Date
KR960034484A true KR960034484A (ko) 1996-10-22
KR100255780B1 KR100255780B1 (ko) 2000-05-01

Family

ID=14026216

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960008025A KR100255780B1 (ko) 1995-03-24 1996-03-23 실리콘 단결정의 육성

Country Status (5)

Country Link
US (1) US5683504A (ko)
EP (1) EP0733725B1 (ko)
JP (1) JP2760957B2 (ko)
KR (1) KR100255780B1 (ko)
DE (1) DE69606449T2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19753477A1 (de) * 1997-12-02 1999-06-10 Wacker Siltronic Halbleitermat Verfahren und Heizvorrichtung zum Aufschmelzen von Halbleitermaterial
US6548886B1 (en) * 1998-05-01 2003-04-15 Wacker Nsce Corporation Silicon semiconductor wafer and method for producing the same
JP2000044387A (ja) 1998-07-27 2000-02-15 Nippon Steel Corp シリコン単結晶製造方法
WO2000061840A1 (fr) * 1999-04-14 2000-10-19 Oleg Alexeevich Remizov Procédé de production de silicium monocristallin
JP4567251B2 (ja) * 2001-09-14 2010-10-20 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
US7125450B2 (en) * 2002-11-12 2006-10-24 Memc Electronic Materials, Inc. Process for preparing single crystal silicon using crucible rotation to control temperature gradient

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2059932B (en) * 1979-09-20 1983-10-12 Sony Corp Solidification processes
JPS5842296A (ja) * 1981-09-07 1983-03-11 クラリオン株式会社 印刷配線基板のはんだ付け方法
US4565671A (en) * 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus
JPS6144797A (ja) * 1984-08-10 1986-03-04 Toshiba Corp 単結晶育成装置およびその制御方法
US4971652A (en) * 1989-12-18 1990-11-20 General Electric Company Method and apparatus for crystal growth control
US5162072A (en) * 1990-12-11 1992-11-10 General Electric Company Apparatus and method for control of melt flow pattern in a crystal growth process

Also Published As

Publication number Publication date
JPH08259379A (ja) 1996-10-08
DE69606449D1 (de) 2000-03-09
JP2760957B2 (ja) 1998-06-04
US5683504A (en) 1997-11-04
EP0733725B1 (en) 2000-02-02
KR100255780B1 (ko) 2000-05-01
DE69606449T2 (de) 2000-09-21
EP0733725A3 (en) 1997-05-07
EP0733725A2 (en) 1996-09-25

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