WO2000061840A1 - Procédé de production de silicium monocristallin - Google Patents

Procédé de production de silicium monocristallin Download PDF

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Publication number
WO2000061840A1
WO2000061840A1 PCT/RU1999/000117 RU9900117W WO0061840A1 WO 2000061840 A1 WO2000061840 A1 WO 2000061840A1 RU 9900117 W RU9900117 W RU 9900117W WO 0061840 A1 WO0061840 A1 WO 0061840A1
Authority
WO
WIPO (PCT)
Prior art keywords
crucible
crystal
heater
speed
diameter
Prior art date
Application number
PCT/RU1999/000117
Other languages
English (en)
Russian (ru)
Inventor
Oleg Alexeevich Remizov
Yune Kwon Jay
Original Assignee
Oleg Alexeevich Remizov
Yune Kwon Jay
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oleg Alexeevich Remizov, Yune Kwon Jay filed Critical Oleg Alexeevich Remizov
Priority to PCT/RU1999/000117 priority Critical patent/WO2000061840A1/fr
Publication of WO2000061840A1 publication Critical patent/WO2000061840A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal

Definitions

  • the invention is subject to technology of reception of material and may be used in the process of cultivating a large volume of equipment.
  • the crucible is made up of cylindrical and spherical parts, while pulling Crucible from the cylindrical part of the crucible leads to a large proportion of the rotation, while increasing the speed of rotation increases the speed of 5 D ⁇ ugim va ⁇ ian ⁇ m vy ⁇ aschivaniya m ⁇ n ⁇ is ⁇ all ⁇ v ⁇ emniya on v ⁇ aschayuschuyusya za ⁇ av ⁇ u of ⁇ as ⁇ lava in ⁇ igle, s ⁇ s ⁇ yaschem of tsilind ⁇ iches ⁇ y and s ⁇ e ⁇ iches ⁇ y chas ⁇ ey, yavlyae ⁇ sya s ⁇ s ⁇ b, ⁇ edusma ⁇ ivayuschy change chas ⁇ y v ⁇ ascheniya ⁇ iglya and ⁇ dde ⁇ zhaniya ⁇ s ⁇ yann ⁇ y chas ⁇ y v ⁇ ascheniya ⁇ is ⁇ alla
  • ⁇ ⁇ ⁇ increases by (0.2--0.5) rpm, and when growing by a spacing of 0.4, ) rpm for each centimeter of the length of the crystal (BS 2077615, ⁇ 30 ⁇ 15/00, 1997).
  • BS 2077615, ⁇ 30 ⁇ 15/00, 1997 In addition to the above described methods, they are difficult to operate and ensure a high, standard one-sided supply system.
  • a more uniform distribution of acid in the range of metals is regulated by changing the size, the rate and the rate of rotation of the crucible and crucible
  • the phenomenon is caused by the effect of a thermal investment, the intensity of a quick growth with an increase in mass Loads and particularly strong occur at the beginning of the process of stretching at a greater depth of the melting of brown.
  • the objective of the present invention is to work out the method of producing non-dispersed multiplexes of an aperture with a second-order radionuclide for the separation of a non-destructive oxidizing substance.
  • the posed problem is solved by the described method of radiation of a large metal, including the melting of the original winter in the crucible, the introduction of the strain, the extinction
  • a protective gas for example, argon
  • the alloy stabilizes the temperature 1442 - 1445 ° ⁇ . It closes the valve on the discharge line and, with the help of the valve on the bypass line, sets the pressure of the valve in the furnace chamber equal to 10 - 12 ⁇ . The waste of gas and thus reduces to 1200 nl / min.
  • the automatic system for regulating the diam- For this, the speed of pulling the ingot smoothly increases to 2 mm / min and / or
  • the obtained mono-crystal has a correct cylindrical shape without distortion of the soil boundaries, and
  • k is the number from the interval from 0.1 to 0.5; ⁇ ⁇ n and ⁇ nom - the corresponding internal diameter of the crucible
  • ⁇ - the coefficient of the situation, in this example is equal to 1.5 and takes into account the location of the alloy in the vicinity of the heater.
  • the numerical value of the coefficient is determined by the experimental method and can vary from 0.5 to 3.0.
  • the coefficient of use is equal to 1.5.
  • the above value is obtained by expediently disposing of the alloy in the vicinity of the heater, which ensures the equalization of the temperature with the equipments.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Cette invention se rapporte aux techniques de production de matériaux semiconducteurs, et peut être utilisée lorsque l'on fait croître des monocristaux de silicium selon le procédé de Tchokhalsky. Cette invention concerne essentiellement un procédé de production de silicium monocristallin, lequel consiste à faire fondre le silicium de départ dans un creuset, à introduire des germes, et à étirer le cristal à partir de la masse en fusion sur un germe en rotation. Le processus se déroule dans une atmosphère de gaz inerte, tandis que les sens de rotation du creuset et du cristal sont les mêmes et que le rapport entre les vitesses de rotation du creuset et du cristal est défini par la formule (I) où φcre et φcri représentent respectivement les vitesses de rotation du creuset et du cristal en t/min., k représente un nombre de 0,1 à 0,5, Dint représente le diamètre interne du creuset de quartz en mm, dnom représente le diamètre nominal du monocristal à faire croître en mm, hmf représente la profondeur initiale de la masse en fusion dans le creuset en mm, Hch représente la longueur de la partie chauffante de l'unité de chauffage en mm, et η représente le coefficient de positionnement qui tient compte de la position du creuset contenant la masse en fusion dans la cavité de l'unité de chauffage, ainsi que de la structure de l'unité thermique. Ce coefficient, qui varie de 0,5 à 3,0, est préalablement déterminé de manière expérimentale.
PCT/RU1999/000117 1999-04-14 1999-04-14 Procédé de production de silicium monocristallin WO2000061840A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/RU1999/000117 WO2000061840A1 (fr) 1999-04-14 1999-04-14 Procédé de production de silicium monocristallin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/RU1999/000117 WO2000061840A1 (fr) 1999-04-14 1999-04-14 Procédé de production de silicium monocristallin

Publications (1)

Publication Number Publication Date
WO2000061840A1 true WO2000061840A1 (fr) 2000-10-19

Family

ID=20130342

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU1999/000117 WO2000061840A1 (fr) 1999-04-14 1999-04-14 Procédé de production de silicium monocristallin

Country Status (1)

Country Link
WO (1) WO2000061840A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU899740A1 (ru) * 1978-05-23 1982-01-23 Особое Конструкторское Бюро Проблемной Лаборатории Радиационной Физики Ереванского Государственного Университета Способ контрол диаметра кристалла
US4436577A (en) * 1980-12-29 1984-03-13 Monsanto Company Method of regulating concentration and distribution of oxygen in Czochralski grown silicon
EP0733725A2 (fr) * 1995-03-24 1996-09-25 Research Development Corporation Of Japan Croissance d'un monocristal de silicium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU899740A1 (ru) * 1978-05-23 1982-01-23 Особое Конструкторское Бюро Проблемной Лаборатории Радиационной Физики Ереванского Государственного Университета Способ контрол диаметра кристалла
US4436577A (en) * 1980-12-29 1984-03-13 Monsanto Company Method of regulating concentration and distribution of oxygen in Czochralski grown silicon
EP0733725A2 (fr) * 1995-03-24 1996-09-25 Research Development Corporation Of Japan Croissance d'un monocristal de silicium

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