DE3872290T2 - Verfahren zur regelung des kristalldurchmessers. - Google Patents

Verfahren zur regelung des kristalldurchmessers.

Info

Publication number
DE3872290T2
DE3872290T2 DE8888104931T DE3872290T DE3872290T2 DE 3872290 T2 DE3872290 T2 DE 3872290T2 DE 8888104931 T DE8888104931 T DE 8888104931T DE 3872290 T DE3872290 T DE 3872290T DE 3872290 T2 DE3872290 T2 DE 3872290T2
Authority
DE
Germany
Prior art keywords
regulating
crystal diameter
crystal
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888104931T
Other languages
English (en)
Other versions
DE3872290D1 (de
Inventor
Nobuo Katsuoka
Yoshihiro Hirano
Atsushi Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE3872290D1 publication Critical patent/DE3872290D1/de
Application granted granted Critical
Publication of DE3872290T2 publication Critical patent/DE3872290T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
DE8888104931T 1987-03-31 1988-03-26 Verfahren zur regelung des kristalldurchmessers. Expired - Fee Related DE3872290T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62078387A JPS63242991A (ja) 1987-03-31 1987-03-31 結晶径制御方法

Publications (2)

Publication Number Publication Date
DE3872290D1 DE3872290D1 (de) 1992-07-30
DE3872290T2 true DE3872290T2 (de) 1993-02-11

Family

ID=13660604

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888104931T Expired - Fee Related DE3872290T2 (de) 1987-03-31 1988-03-26 Verfahren zur regelung des kristalldurchmessers.

Country Status (4)

Country Link
US (1) US4973377A (de)
EP (1) EP0285943B1 (de)
JP (1) JPS63242991A (de)
DE (1) DE3872290T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5215620A (en) * 1989-09-19 1993-06-01 Shin-Etsu Handotai Co. Ltd. Method for pulling a silicon single crystal by imposing a periodic rotation rate on a constant rotation rate
US5269875A (en) * 1989-10-05 1993-12-14 Shin-Etsu Handotai Company, Limited Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method
JPH0777999B2 (ja) * 1989-11-24 1995-08-23 信越半導体株式会社 アンチモンドープ単結晶シリコンの育成方法
JP2601930B2 (ja) * 1990-03-29 1997-04-23 信越半導体株式会社 単結晶ネツク部直径制御方法及び装置
FI911856A (fi) * 1990-04-27 1991-10-28 Nippon Kokan Kk Foerfarande och apparat foer bestaemning av diametern hos en enskild silikonkristall.
FI911857A (fi) * 1990-04-27 1991-10-28 Nippon Kokan Kk Foerfarande och apparat foer kontroll av diametern hos en enskild silikonkristall.
JPH0663824B2 (ja) * 1990-04-29 1994-08-22 信越半導体株式会社 湯面振動測定方法及び装置
JPH0431386A (ja) * 1990-05-25 1992-02-03 Shin Etsu Handotai Co Ltd 半導体単結晶引上方法
JP2546736B2 (ja) * 1990-06-21 1996-10-23 信越半導体株式会社 シリコン単結晶引上方法
JPH0777996B2 (ja) * 1990-10-12 1995-08-23 信越半導体株式会社 コーン部育成制御方法及び装置
JPH0785489B2 (ja) * 1991-02-08 1995-09-13 信越半導体株式会社 単結晶の直径計測方法
US5178720A (en) * 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates
US5501172A (en) * 1994-03-11 1996-03-26 Shin-Etsu Handotai Co., Ltd. Method of growing silicon single crystals
JP2966322B2 (ja) * 1995-02-27 1999-10-25 三菱マテリアルシリコン株式会社 シリコン単結晶インゴット及びその製造方法
US6226032B1 (en) 1996-07-16 2001-05-01 General Signal Corporation Crystal diameter control system
US5968263A (en) * 1998-04-01 1999-10-19 Memc Electronic Materials, Inc. Open-loop method and system for controlling growth of semiconductor crystal
DE69902911T2 (de) 1998-06-26 2003-01-16 Memc Electronic Materials Widerstandsheizung fur eine kristallzüchtungsvorrichtung und verfahren zu ihrer verwendung
US6241818B1 (en) 1999-04-07 2001-06-05 Memc Electronic Materials, Inc. Method and system of controlling taper growth in a semiconductor crystal growth process
US6285011B1 (en) 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
US6203611B1 (en) 1999-10-19 2001-03-20 Memc Electronic Materials, Inc. Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth
US6663709B2 (en) 2001-06-26 2003-12-16 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots
KR101881380B1 (ko) * 2017-02-06 2018-07-24 에스케이실트론 주식회사 단결정 잉곳 성장 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3621213A (en) * 1969-11-26 1971-11-16 Ibm Programmed digital-computer-controlled system for automatic growth of semiconductor crystals
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS59102896A (ja) * 1982-11-30 1984-06-14 Toshiba Corp 単結晶の形状制御方法
JPS59116189A (ja) * 1982-12-22 1984-07-04 Toshiba Corp 単結晶形状制御方法
JPS6033299A (ja) * 1983-07-29 1985-02-20 Toshiba Corp 単結晶の製造装置
US4710258A (en) * 1984-11-30 1987-12-01 General Signal Corporation System for controlling the diameter of a crystal in a crystal growing furnace
JPH0649631B2 (ja) * 1986-10-29 1994-06-29 信越半導体株式会社 結晶径測定装置

Also Published As

Publication number Publication date
JPS63242991A (ja) 1988-10-07
DE3872290D1 (de) 1992-07-30
US4973377A (en) 1990-11-27
EP0285943A1 (de) 1988-10-12
JPH0438719B2 (de) 1992-06-25
EP0285943B1 (de) 1992-06-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee