KR970059320A - 단결정 인상 장치 - Google Patents

단결정 인상 장치 Download PDF

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Publication number
KR970059320A
KR970059320A KR1019970000591A KR19970000591A KR970059320A KR 970059320 A KR970059320 A KR 970059320A KR 1019970000591 A KR1019970000591 A KR 1019970000591A KR 19970000591 A KR19970000591 A KR 19970000591A KR 970059320 A KR970059320 A KR 970059320A
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KR
South Korea
Prior art keywords
crucible
single crystal
crystal pulling
semiconductor melt
raw material
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Application number
KR1019970000591A
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English (en)
Other versions
KR100439132B1 (ko
Inventor
미찌오 기다
다까시 아따미
히로아끼 다구찌
히사시 후루야
Original Assignee
나가사와 마사유끼
미쯔비시 마테리알 실리콘 가부시끼가이샤
아끼모또 유미
미쯔비시 마테리알 가부시끼가이샤
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Application filed by 나가사와 마사유끼, 미쯔비시 마테리알 실리콘 가부시끼가이샤, 아끼모또 유미, 미쯔비시 마테리알 가부시끼가이샤 filed Critical 나가사와 마사유끼
Publication of KR970059320A publication Critical patent/KR970059320A/ko
Application granted granted Critical
Publication of KR100439132B1 publication Critical patent/KR100439132B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

본 발명은, 기체 기밀 용기와, 하부 모서리에 연결되는 외부 도가니 및 내부 도가니를 갖는 상기 기밀 용기 내부에 반도체 용융물을 저장하기 위한 이중 도가니와, 상기 외부 도가니 및 내부 도가니 사이의 위치에서 원재료를 상기 반도체 용융물에 부가하기 위한 원재료 공급 수단을 구비한 단결정 인상 장치에 관한 것으로, 본 장치의 유동 제한 부재는 반도체 용융물의 유동을 제한하기 위해 외부 도가니 및 내부 도가니 사이의 반도체 용융물 영역 내부에 구비되는 것을 특징으로 한다.

Description

단결정 인상 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예의 필수 구성 요소의 단면도.

Claims (5)

  1. 기체 기밀 용기와, 하부 모서리에서 연결되는 외부 도가니 및 내부 도가니를 갖는 상기 기밀 용기 내부에 반도체 용융물을 저장하기 위한 이중 도가니와, 상기 외부 도가니 및 내부 도가니 사이의 위치에서 원재료를 상기 반도체 용융물에 부가하기 위한 원재료 공급 수단을 구비한 단결정 인상 장치에 있어서, 유동 제한 부재는 반도체 용융물의 유동을 제한하기 위해 외부 도가니 및 내부 도가니 사이의 반도체 용융물 영역 내부에 구비되는 것을 특징으로 하는 단결정 인상 장치.
  2. 제1항에 있어서, 상기 유동 제한 부재는 상기 내부 도가니 및 외부 도가니 사이의 영역에서 상기 반도체 용융물 내의 대류 흐름을 제한하는 대류 흐름 제한 부재인 것을 특징으로 하는 단결정 인상 장치.
  3. 제2항에 있어서, 상기 유동 제한 부재는 원재료 투입 지점으로부터 하부 모서리 연결부로 이어지는 상기 외부 도가니 및 내부 도가니 사이의 통로를 길게 하도록 배치되는 것을 특징으로 하는 단결정 인상 장치.
  4. 제1항 또는 제2항에 있어서, 상기 유동 제한 부재는 상기 외부 도가니(11) 및 내부 도가니(12)와 중심이 일치하는 링 형태로 형성되고 상기 반도체 용융물의 표면에 수평 방향으로 배치되는 배츨 판인 것을 특징으로 하는 단결정 인상 장치.
  5. 제4항에 있어서, 상기 배플 판은 상기 원재료 공급 수단의 하부에 배치되고, 상기 원재료 공급 수단에 의해 지지되는 것을 특징으로 하는 단결정 인상 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970000591A 1996-01-12 1997-01-11 단결정인상장치 KR100439132B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-004408 1996-01-12
JP00440896A JP3769800B2 (ja) 1996-01-12 1996-01-12 単結晶引上装置

Publications (2)

Publication Number Publication Date
KR970059320A true KR970059320A (ko) 1997-08-12
KR100439132B1 KR100439132B1 (ko) 2004-08-25

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Country Status (6)

Country Link
US (1) US5871581A (ko)
JP (1) JP3769800B2 (ko)
KR (1) KR100439132B1 (ko)
CN (1) CN1134560C (ko)
DE (1) DE19700516B4 (ko)
TW (1) TW531571B (ko)

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US10407797B2 (en) * 2017-05-04 2019-09-10 Corner Start Limited Crystal pulling system and method including crucible and barrier
KR20210150510A (ko) 2019-04-11 2021-12-10 글로벌웨이퍼스 씨오., 엘티디. 말기 본체 길이에서 감소된 왜곡을 갖는 잉곳을 준비하기 위한 프로세스
CN109972200B (zh) * 2019-04-18 2020-08-14 邢台晶龙电子材料有限公司 连续提拉单晶硅生长方法
SG11202111451WA (en) 2019-04-18 2021-11-29 Globalwafers Co Ltd Methods for growing a single crystal silicon ingot using continuous czochralski method
CN110029395A (zh) * 2019-04-18 2019-07-19 邢台晶龙电子材料有限公司 Ccz连续拉晶坩埚及涂层方法
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Also Published As

Publication number Publication date
CN1160779A (zh) 1997-10-01
CN1134560C (zh) 2004-01-14
JPH09194288A (ja) 1997-07-29
JP3769800B2 (ja) 2006-04-26
DE19700516B4 (de) 2014-03-13
US5871581A (en) 1999-02-16
DE19700516A1 (de) 1997-07-17
KR100439132B1 (ko) 2004-08-25
TW531571B (en) 2003-05-11

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