FR2172768A1 - Composite material crystal growth - using soln of the cpd in presence of vapour-phase components(s) - Google Patents

Composite material crystal growth - using soln of the cpd in presence of vapour-phase components(s)

Info

Publication number
FR2172768A1
FR2172768A1 FR7205758A FR7205758A FR2172768A1 FR 2172768 A1 FR2172768 A1 FR 2172768A1 FR 7205758 A FR7205758 A FR 7205758A FR 7205758 A FR7205758 A FR 7205758A FR 2172768 A1 FR2172768 A1 FR 2172768A1
Authority
FR
France
Prior art keywords
source
vapour
cpd
soln
composite material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7205758A
Other languages
French (fr)
Other versions
FR2172768B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7205758A priority Critical patent/FR2172768A1/en
Publication of FR2172768A1 publication Critical patent/FR2172768A1/en
Application granted granted Critical
Publication of FR2172768B1 publication Critical patent/FR2172768B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Esp. for semiconductor cpds. e.g. GaAs or GaP, the source of liquid phase is at the base of a vertical sealed vessel, and in an upper part of the vessel is the source of vapour phase, Before sealing the vessel and placing in the differential temp. muffle, a trap is interposed between the neck and the liquid phase source in the form of a quartz plate with >=1 perforation or a wadding plug of refractory fibre material esp. quartz wool or both. The plug may be above or below the source of vapour phase component. Contamination by unwanted impurities is prevented.
FR7205758A 1972-02-21 1972-02-21 Composite material crystal growth - using soln of the cpd in presence of vapour-phase components(s) Granted FR2172768A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7205758A FR2172768A1 (en) 1972-02-21 1972-02-21 Composite material crystal growth - using soln of the cpd in presence of vapour-phase components(s)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7205758A FR2172768A1 (en) 1972-02-21 1972-02-21 Composite material crystal growth - using soln of the cpd in presence of vapour-phase components(s)

Publications (2)

Publication Number Publication Date
FR2172768A1 true FR2172768A1 (en) 1973-10-05
FR2172768B1 FR2172768B1 (en) 1974-09-13

Family

ID=9093836

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7205758A Granted FR2172768A1 (en) 1972-02-21 1972-02-21 Composite material crystal growth - using soln of the cpd in presence of vapour-phase components(s)

Country Status (1)

Country Link
FR (1) FR2172768A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2759383A1 (en) * 1997-02-07 1998-08-14 Sofradir Compound semiconductor crystallisation from liquid bath

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2759383A1 (en) * 1997-02-07 1998-08-14 Sofradir Compound semiconductor crystallisation from liquid bath

Also Published As

Publication number Publication date
FR2172768B1 (en) 1974-09-13

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Legal Events

Date Code Title Description
ST Notification of lapse