CN1134560C - 拉单晶装置 - Google Patents
拉单晶装置 Download PDFInfo
- Publication number
- CN1134560C CN1134560C CNB97101020XA CN97101020A CN1134560C CN 1134560 C CN1134560 C CN 1134560C CN B97101020X A CNB97101020X A CN B97101020XA CN 97101020 A CN97101020 A CN 97101020A CN 1134560 C CN1134560 C CN 1134560C
- Authority
- CN
- China
- Prior art keywords
- crucible
- source material
- semi
- melt
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title abstract description 15
- 238000009963 fulling Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 239000000463 material Substances 0.000 claims abstract description 55
- 238000009792 diffusion process Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical group [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (3)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP00440896A JP3769800B2 (ja) | 1996-01-12 | 1996-01-12 | 単結晶引上装置 |
JP004408/1996 | 1996-01-12 | ||
JP004408/96 | 1996-01-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1160779A CN1160779A (zh) | 1997-10-01 |
CN1134560C true CN1134560C (zh) | 2004-01-14 |
Family
ID=11583501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB97101020XA Expired - Fee Related CN1134560C (zh) | 1996-01-12 | 1997-01-10 | 拉单晶装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5871581A (zh) |
JP (1) | JP3769800B2 (zh) |
KR (1) | KR100439132B1 (zh) |
CN (1) | CN1134560C (zh) |
DE (1) | DE19700516B4 (zh) |
TW (1) | TW531571B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1314841C (zh) * | 2004-12-03 | 2007-05-09 | 中国科学院上海硅酸盐研究所 | 坩埚升降法补充熔料生长晶体的装置和方法 |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6843849B1 (en) * | 1999-05-22 | 2005-01-18 | Japan Science And Technology Corporation | Method and apparatus for growing high quality single crystal |
US6984263B2 (en) * | 2001-11-01 | 2006-01-10 | Midwest Research Institute | Shallow melt apparatus for semicontinuous czochralski crystal growth |
WO2003038161A1 (en) * | 2001-11-01 | 2003-05-08 | Midwest Research Institute | Shallow melt apparatus for semicontinuous czochralski crystal growth |
DE10204178B4 (de) * | 2002-02-01 | 2008-01-03 | Siltronic Ag | Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial |
US8021483B2 (en) * | 2002-02-20 | 2011-09-20 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
US6959355B2 (en) * | 2003-02-24 | 2005-10-25 | Standard Microsystems Corporation | Universal serial bus hub with shared high speed handler |
JP4500186B2 (ja) * | 2005-03-07 | 2010-07-14 | 株式会社リコー | Iii族窒化物結晶成長装置 |
US9464364B2 (en) * | 2011-11-09 | 2016-10-11 | Varian Semiconductor Equipment Associates, Inc. | Thermal load leveling during silicon crystal growth from a melt using anisotropic materials |
US20140144371A1 (en) * | 2012-11-29 | 2014-05-29 | Solaicx, Inc. | Heat Shield For Improved Continuous Czochralski Process |
US9863063B2 (en) * | 2012-12-18 | 2018-01-09 | Corner Star Limited | Weir for inhibiting melt flow in a crucible |
JP2016505503A (ja) * | 2012-12-21 | 2016-02-25 | サンエディソン・インコーポレイテッドSunEdison,Inc. | シリカパーツを接合するための方法 |
CN103225108B (zh) * | 2013-04-07 | 2016-04-06 | 福建福晶科技股份有限公司 | 一种大尺寸bbo晶体快速生长的方法 |
CN104342750A (zh) * | 2013-08-08 | 2015-02-11 | 徐州协鑫太阳能材料有限公司 | 石英坩埚及其制备方法 |
US9822466B2 (en) * | 2013-11-22 | 2017-11-21 | Corner Star Limited | Crystal growing systems and crucibles for enhancing heat transfer to a melt |
US10415151B1 (en) * | 2014-03-27 | 2019-09-17 | Varian Semiconductor Equipment Associates, Inc | Apparatus for controlling heat flow within a silicon melt |
KR101599338B1 (ko) * | 2014-05-13 | 2016-03-03 | 웅진에너지 주식회사 | Ccz용 이중도가니 |
US10221500B2 (en) * | 2017-01-04 | 2019-03-05 | Corner Star Limited | System for forming an ingot including crucible and conditioning members |
CN108301038A (zh) * | 2017-01-12 | 2018-07-20 | 新疆知信科技有限公司 | 一种单晶硅提拉炉和生长单晶硅的拉制方法 |
US10407797B2 (en) * | 2017-05-04 | 2019-09-10 | Corner Start Limited | Crystal pulling system and method including crucible and barrier |
CN113825862A (zh) | 2019-04-11 | 2021-12-21 | 环球晶圆股份有限公司 | 后段主体长度具有减小变形的锭的制备工艺 |
WO2020214531A1 (en) | 2019-04-18 | 2020-10-22 | Globalwafers Co., Ltd. | Methods for growing a single crystal silicon ingot using continuous czochralski method |
CN110029395A (zh) * | 2019-04-18 | 2019-07-19 | 邢台晶龙电子材料有限公司 | Ccz连续拉晶坩埚及涂层方法 |
CN109972200B (zh) * | 2019-04-18 | 2020-08-14 | 邢台晶龙电子材料有限公司 | 连续提拉单晶硅生长方法 |
JP7216340B2 (ja) * | 2019-09-06 | 2023-02-01 | 株式会社Sumco | シリコン単結晶の育成方法およびシリコン単結晶の引き上げ装置 |
US11111596B2 (en) | 2019-09-13 | 2021-09-07 | Globalwafers Co., Ltd. | Single crystal silicon ingot having axial uniformity |
US11111597B2 (en) | 2019-09-13 | 2021-09-07 | Globalwafers Co., Ltd. | Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method |
CN112210820A (zh) * | 2020-09-10 | 2021-01-12 | 徐州鑫晶半导体科技有限公司 | 晶体生产工艺 |
CN112981519A (zh) * | 2021-03-16 | 2021-06-18 | 大连连城数控机器股份有限公司 | 用于连续单晶硅生长的石英坩埚及其制造方法和组合坩埚 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5957985A (ja) * | 1982-09-28 | 1984-04-03 | Fujitsu Ltd | 結晶成長用坩堝 |
JPS62128999A (ja) * | 1985-11-25 | 1987-06-11 | Sumitomo Electric Ind Ltd | 2重るつぼを用いた単結晶引上方法及び2重るつぼ |
USH520H (en) * | 1985-12-06 | 1988-09-06 | Technique for increasing oxygen incorporation during silicon czochralski crystal growth | |
JP2755588B2 (ja) * | 1988-02-22 | 1998-05-20 | 株式会社東芝 | 結晶引上げ方法 |
JPH0255287A (ja) * | 1988-08-18 | 1990-02-23 | Furukawa Electric Co Ltd:The | 単結晶成長装置 |
JPH0676274B2 (ja) * | 1988-11-11 | 1994-09-28 | 東芝セラミックス株式会社 | シリコン単結晶の製造装置 |
JPH0688869B2 (ja) * | 1989-01-05 | 1994-11-09 | 川崎製鉄株式会社 | 単結晶引上装置 |
JPH02243587A (ja) * | 1989-03-17 | 1990-09-27 | Kawasaki Steel Corp | 単結晶の引上方法およびその装置 |
JPH0372778A (ja) * | 1989-08-11 | 1991-03-27 | Fuji Xerox Co Ltd | 画像処理装置の領域識別方式 |
JPH03177393A (ja) * | 1989-12-06 | 1991-08-01 | Nippon Steel Corp | 単結晶の製造装置 |
JPH03199192A (ja) * | 1989-12-27 | 1991-08-30 | Toshiba Corp | シリコン単結晶引上げ用ルツボ |
US5314667A (en) * | 1991-03-04 | 1994-05-24 | Lim John C | Method and apparatus for single crystal silicon production |
JPH05310495A (ja) * | 1992-04-28 | 1993-11-22 | Nkk Corp | シリコン単結晶の製造方法および製造装置 |
JPH06135791A (ja) * | 1992-10-27 | 1994-05-17 | Sumitomo Electric Ind Ltd | 半導体単結晶の育成装置 |
US5650008A (en) * | 1995-12-01 | 1997-07-22 | Advanced Materials Processing, Llc | Method for preparing homogeneous bridgman-type single crystals |
-
1996
- 1996-01-12 JP JP00440896A patent/JP3769800B2/ja not_active Expired - Lifetime
- 1996-12-21 TW TW085115857A patent/TW531571B/zh not_active IP Right Cessation
-
1997
- 1997-01-09 DE DE19700516.0A patent/DE19700516B4/de not_active Expired - Fee Related
- 1997-01-10 US US08/781,841 patent/US5871581A/en not_active Expired - Lifetime
- 1997-01-10 CN CNB97101020XA patent/CN1134560C/zh not_active Expired - Fee Related
- 1997-01-11 KR KR1019970000591A patent/KR100439132B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1314841C (zh) * | 2004-12-03 | 2007-05-09 | 中国科学院上海硅酸盐研究所 | 坩埚升降法补充熔料生长晶体的装置和方法 |
Also Published As
Publication number | Publication date |
---|---|
DE19700516A1 (de) | 1997-07-17 |
JP3769800B2 (ja) | 2006-04-26 |
KR970059320A (ko) | 1997-08-12 |
CN1160779A (zh) | 1997-10-01 |
KR100439132B1 (ko) | 2004-08-25 |
JPH09194288A (ja) | 1997-07-29 |
TW531571B (en) | 2003-05-11 |
DE19700516B4 (de) | 2014-03-13 |
US5871581A (en) | 1999-02-16 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: MITSUBISHI MATERIALS CORP. |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: SUMCO CORP. Free format text: FORMER NAME: MITSUBISHI MATERIALS SILICON CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Co-patentee after: Mitsubishi Materials Corp. Patentee after: SUMCO Corp. Address before: Tokyo, Japan Co-patentee before: Mitsubishi Materials Corp. Patentee before: SUMITOMO MITSUBISHI SILICON Corp. |
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TR01 | Transfer of patent right |
Effective date of registration: 20111031 Address after: Tokyo, Japan Patentee after: SUMCO Corp. Address before: Tokyo, Japan Co-patentee before: Mitsubishi Materials Corp. Patentee before: Sumco Corp. Effective date of registration: 20111031 Address after: Tokyo, Japan Co-patentee after: Mitsubishi Materials Corp. Patentee after: SUMITOMO MITSUBISHI SILICON Corp. Address before: Tokyo, Japan Co-patentee before: Mitsubishi Materials Corp. Patentee before: Sumitomo Mitsubishi Silicon Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040114 Termination date: 20160110 |
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CF01 | Termination of patent right due to non-payment of annual fee |