KR970052967A - 웨이퍼 연마장치 - Google Patents

웨이퍼 연마장치 Download PDF

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Publication number
KR970052967A
KR970052967A KR1019960067571A KR19960067571A KR970052967A KR 970052967 A KR970052967 A KR 970052967A KR 1019960067571 A KR1019960067571 A KR 1019960067571A KR 19960067571 A KR19960067571 A KR 19960067571A KR 970052967 A KR970052967 A KR 970052967A
Authority
KR
South Korea
Prior art keywords
plate
wafer
polishing
respect
rotating
Prior art date
Application number
KR1019960067571A
Other languages
English (en)
Other versions
KR100225275B1 (ko
Inventor
후미히꼬 하세가와
마꼬도 고바야시
후미오 스즈끼
Original Assignee
와다 다다시
신에쯔 한도타이 콤파니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 와다 다다시, 신에쯔 한도타이 콤파니 리미티드 filed Critical 와다 다다시
Publication of KR970052967A publication Critical patent/KR970052967A/ko
Application granted granted Critical
Publication of KR100225275B1 publication Critical patent/KR100225275B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

평탄성이 우수한 웨이퍼를 안정적으로 얻을 수 있는 웨이퍼 연마장치를 제공한다.
연마포가 제공된 정반과, 그 정반 중심에서 떨어진 위치의 상방에 설한 연마헤드와, 그 연마헤드의 하측에 설치되는 플레이트를 갖고, 상기 플레이트에는 웨이퍼를 압압하기 위한 백킹 패드가 설해짐과 동시에, 복수개의 상기 웨이퍼를 담지 가능하게 구성된 케리어가 당해 플레이트에 대하여 회전자재로 되게 설치되며, 상기 플레이트에 대하여 상기 웨이퍼를 자전시키면서 공전시킴에 의해 당해 웨이퍼의 연마를 행하도록 구성시킨 것을 특징으로 한다.

Description

웨이퍼 연마장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 의한 연마장치의 주요부에 대한 정면도.

Claims (2)

  1. 연마포가 제공된 정반(定盤)과, 그 정반 중심으로부터 떨어진 위치의 상방에 설해진 연마헤드와, 그 연마헤드의 하측에 설치되는 플레이트를 갖고, 상기 플레이트에는 웨이퍼를 압압하기 위한 백킹 패드가 설치됨과 동시에, 복수개의 상기 웨이퍼를 담지 가능하게 구성된 케리어가 당해 플레이트에 대하여 회전자재로 설해지며, 상기 플레이트에 대하여 상기 웨이퍼를 자전시키면서 공전시킴에 의해 당해 웨이퍼의 연마를 행하도록 구성한 것을 특징으로 하는 웨이퍼 연마장치.
  2. 제1항에 있어서, 상기 백킹 패드의 하측에는 계면활성제가 도포되어 있는 것을 특징으로 하는 웨이퍼 연마장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960067571A 1995-12-28 1996-12-18 웨이퍼 연마장치 KR100225275B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7-353987 1995-12-28
JP35398795A JP3453977B2 (ja) 1995-12-28 1995-12-28 ウェーハの研磨装置

Publications (2)

Publication Number Publication Date
KR970052967A true KR970052967A (ko) 1997-07-29
KR100225275B1 KR100225275B1 (ko) 1999-10-15

Family

ID=18434564

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960067571A KR100225275B1 (ko) 1995-12-28 1996-12-18 웨이퍼 연마장치

Country Status (7)

Country Link
US (1) US5860853A (ko)
EP (1) EP0781628B1 (ko)
JP (1) JP3453977B2 (ko)
KR (1) KR100225275B1 (ko)
DE (1) DE69607123T2 (ko)
MY (1) MY132537A (ko)
TW (1) TW351690B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100430581B1 (ko) * 2001-12-11 2004-05-10 동부전자 주식회사 Ｃｍｐ 장치의 상부링

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999048645A1 (en) * 1998-03-23 1999-09-30 Speedfam-Ipec Corporation Backing pad for workpiece carrier
JP3185753B2 (ja) * 1998-05-22 2001-07-11 日本電気株式会社 半導体装置の製造方法
TW467795B (en) * 1999-03-15 2001-12-11 Mitsubishi Materials Corp Wafer transporting device, wafer polishing device and method for making wafers
US6196899B1 (en) * 1999-06-21 2001-03-06 Micron Technology, Inc. Polishing apparatus
US6287173B1 (en) * 2000-01-11 2001-09-11 Lucent Technologies, Inc. Longer lifetime warm-up wafers for polishing systems
DE10054166C2 (de) * 2000-11-02 2002-08-08 Wacker Siltronic Halbleitermat Vorrichtung zum Polieren von Halbleiterscheiben
JP2005322663A (ja) 2004-05-06 2005-11-17 Opnext Japan Inc 半導体基板の研磨方法および研磨治具
US7520798B2 (en) * 2007-01-31 2009-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with grooves to reduce slurry consumption
US7520796B2 (en) * 2007-01-31 2009-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with grooves to reduce slurry consumption
JP5495525B2 (ja) * 2008-08-18 2014-05-21 株式会社東京精密 研磨ヘッドにおけるウェーハ回転安定化構造
US9039488B2 (en) * 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US8998677B2 (en) * 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US8998678B2 (en) * 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US9011207B2 (en) * 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US8845394B2 (en) * 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
CN111958460A (zh) * 2020-08-28 2020-11-20 房金祥 一种机械瓶盖加工用太阳纹砂光设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3841031A (en) * 1970-10-21 1974-10-15 Monsanto Co Process for polishing thin elements
US4258508A (en) * 1979-09-04 1981-03-31 Rca Corporation Free hold down of wafers for material removal
FR2521895A1 (fr) * 1982-02-23 1983-08-26 Ansermoz Raymond Tasseau multiple pour le rodage, au lapidaire, de pieces en forme de lames minces
US4918870A (en) * 1986-05-16 1990-04-24 Siltec Corporation Floating subcarriers for wafer polishing apparatus
JPH0615565A (ja) * 1991-12-18 1994-01-25 Shin Etsu Handotai Co Ltd ウエーハ自動ラッピング装置
JP3024373B2 (ja) * 1992-07-07 2000-03-21 信越半導体株式会社 シート状弾性発泡体及びウェーハ研磨加工用治具
JPH0663862A (ja) * 1992-08-22 1994-03-08 Fujikoshi Mach Corp 研磨装置
JP2716653B2 (ja) * 1993-11-01 1998-02-18 不二越機械工業株式会社 ウェーハの研磨装置および研磨方法
JPH07201787A (ja) * 1993-12-28 1995-08-04 Lintec Corp ウエハ表面保護シートおよびその利用方法
JP2616735B2 (ja) * 1995-01-25 1997-06-04 日本電気株式会社 ウェハの研磨方法およびその装置
JP3158934B2 (ja) * 1995-02-28 2001-04-23 三菱マテリアル株式会社 ウェーハ研磨装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100430581B1 (ko) * 2001-12-11 2004-05-10 동부전자 주식회사 Ｃｍｐ 장치의 상부링

Also Published As

Publication number Publication date
JP3453977B2 (ja) 2003-10-06
DE69607123D1 (de) 2000-04-20
EP0781628A1 (en) 1997-07-02
MY132537A (en) 2007-10-31
US5860853A (en) 1999-01-19
KR100225275B1 (ko) 1999-10-15
JPH09183063A (ja) 1997-07-15
EP0781628B1 (en) 2000-03-15
DE69607123T2 (de) 2000-07-13
TW351690B (en) 1999-02-01

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