KR970030917A - 박막트랜지스터 제조 방법 - Google Patents
박막트랜지스터 제조 방법 Download PDFInfo
- Publication number
- KR970030917A KR970030917A KR1019950039630A KR19950039630A KR970030917A KR 970030917 A KR970030917 A KR 970030917A KR 1019950039630 A KR1019950039630 A KR 1019950039630A KR 19950039630 A KR19950039630 A KR 19950039630A KR 970030917 A KR970030917 A KR 970030917A
- Authority
- KR
- South Korea
- Prior art keywords
- gate electrode
- forming
- doped polysilicon
- thin film
- drain
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title claims abstract 4
- 238000000034 method Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims abstract 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract 9
- 229920005591 polysilicon Polymers 0.000 claims abstract 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract 3
- 239000002019 doping agent Substances 0.000 claims abstract 3
- 238000000059 patterning Methods 0.000 claims abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
본 발명은 박막트랜지스터 제조 방법에 있어서; 하부절연막 상에 게이트 전극을 패터닝하는 단계; 상기 게이트 전극 측벽에 상기 게이트 전극과 절연된 소오스/드레인용 도핑된 폴리실리콘막을 형성하는 단계; 상기 게이트 전극 상부와 상기 도핑된 폴리실리콘막 소정부위의 상부에 게이트 산화막을 형성하는 단계; 전체구조 상부에 채널용 비정질 폴리실리콘막을 형성하는 단계; 상기 도핑된 폴리실리콘막의 도펀트를 상기 비정질 실리콘막으로 확산시키는 단계를 포함하는 것을 특징으로 하는 박막트랜지스터 제조 방법에 관한 것으로, 소오스/드레인 마스크 형성 및 이온주입을 실시하지 않고도, 박막트랜지스터의 소오스/드레인 지역 및 드레인 오프셋 구조 형성이 가능하며, 공정의 단순화를 가져온다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2(a)도 내지 제2(f)도는 본 발명의 일실시예에 따른 박막트랜지스터 형성 공정도.
Claims (3)
- 박막트랜지스터 제조 방법에 있어서; 하부절연막 상에 게이트 전극을 패터닝하는 단계; 상기 게이트 전극 측벽에 상기 게이트 전극과 절연된 소오스/드레인용으로 도핑된 폴리실리콘막을 형성하는 단계; 상기 게이트 전극 상부와 상기 도핑된 폴리실리콘막 소정부위의 상부에 게이트 산화막을 형성하는 단계; 전체구조 상부에 채널용 비정질 폴리실리콘막을 형성하는 단계; 상기 도핑된 폴리실리콘막의 도펀트를 상기 비정질 실리콘막으로 확산시키는 단계를 포함하는 것을 특징으로 하는 박막트랜지스터 제조 방법.
- 제1항에 있어서; 상기 게이트 산화막은 게이트 전극 상부와 드레인 오프셋 지역에 패터닝 되어 드레인 오프셋 구조를 형성하는 것을 특징으로 하는 박막트랜지스터 제조 방법.
- 제1항에 있어서; 상기 도핑된 폴리실리콘막의 도펀트를 상기 비정질 실리콘막으로 확산시키는 것에 의해 소오스 오버랩 구조를 형성하는 것을 특징으로 하는 박막트랜지스터 제조 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950039630A KR100214075B1 (ko) | 1995-11-03 | 1995-11-03 | 박막트랜지스터 제조 방법 |
US08/738,745 US5789282A (en) | 1995-11-03 | 1996-10-28 | Method for fabricating thin film transistor |
JP8288724A JP2918223B2 (ja) | 1995-11-03 | 1996-10-30 | 薄膜トランジスタの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950039630A KR100214075B1 (ko) | 1995-11-03 | 1995-11-03 | 박막트랜지스터 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970030917A true KR970030917A (ko) | 1997-06-26 |
KR100214075B1 KR100214075B1 (ko) | 1999-08-02 |
Family
ID=19432916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950039630A KR100214075B1 (ko) | 1995-11-03 | 1995-11-03 | 박막트랜지스터 제조 방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5789282A (ko) |
JP (1) | JP2918223B2 (ko) |
KR (1) | KR100214075B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102410616B1 (ko) * | 2015-06-09 | 2022-06-20 | 삼성디스플레이 주식회사 | 박막트랜지스터, 이의 제조 방법, 및 박막트랜지스터를 포함하는 표시장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4603468A (en) * | 1984-09-28 | 1986-08-05 | Texas Instruments Incorporated | Method for source/drain self-alignment in stacked CMOS |
US4628589A (en) * | 1984-09-28 | 1986-12-16 | Texas Instruments Incorporated | Method for fabricating stacked CMOS structures |
JPH0824144B2 (ja) * | 1987-06-10 | 1996-03-06 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5024959A (en) * | 1989-09-25 | 1991-06-18 | Motorola, Inc. | CMOS process using doped glass layer |
JPH04171767A (ja) * | 1990-11-02 | 1992-06-18 | Sharp Corp | 薄膜トランジスタ及びその製造方法 |
US5158898A (en) * | 1991-11-19 | 1992-10-27 | Motorola, Inc. | Self-aligned under-gated thin film transistor and method of formation |
US5403759A (en) * | 1992-10-02 | 1995-04-04 | Texas Instruments Incorporated | Method of making thin film transistor and a silicide local interconnect |
US5348897A (en) * | 1992-12-01 | 1994-09-20 | Paradigm Technology, Inc. | Transistor fabrication methods using overlapping masks |
KR960012583B1 (en) * | 1993-06-21 | 1996-09-23 | Lg Semicon Co Ltd | Tft (thin film transistor )and the method of manufacturing the same |
US5573964A (en) * | 1995-11-17 | 1996-11-12 | International Business Machines Corporation | Method of making thin film transistor with a self-aligned bottom gate using diffusion from a dopant source layer |
-
1995
- 1995-11-03 KR KR1019950039630A patent/KR100214075B1/ko not_active IP Right Cessation
-
1996
- 1996-10-28 US US08/738,745 patent/US5789282A/en not_active Expired - Lifetime
- 1996-10-30 JP JP8288724A patent/JP2918223B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2918223B2 (ja) | 1999-07-12 |
KR100214075B1 (ko) | 1999-08-02 |
JPH09167844A (ja) | 1997-06-24 |
US5789282A (en) | 1998-08-04 |
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