KR970004557B1 - 투명도전막의 형성방법 - Google Patents

투명도전막의 형성방법 Download PDF

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Publication number
KR970004557B1
KR970004557B1 KR1019930021848A KR930021848A KR970004557B1 KR 970004557 B1 KR970004557 B1 KR 970004557B1 KR 1019930021848 A KR1019930021848 A KR 1019930021848A KR 930021848 A KR930021848 A KR 930021848A KR 970004557 B1 KR970004557 B1 KR 970004557B1
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KR
South Korea
Prior art keywords
ito film
film
forming
transparent conductive
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019930021848A
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English (en)
Korean (ko)
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KR940009732A (ko
Inventor
유끼야 니시오까
유끼노부 나까다
히데노리 네고또
요시노리 시마다
다께히사 사꾸라이
미끼오 가따아마
Original Assignee
쓰지 하루오
샤프 가부시끼가이샤
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Publication of KR940009732A publication Critical patent/KR940009732A/ko
Application granted granted Critical
Publication of KR970004557B1 publication Critical patent/KR970004557B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Non-Insulated Conductors (AREA)
KR1019930021848A 1992-10-21 1993-10-20 투명도전막의 형성방법 Expired - Fee Related KR970004557B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4283299A JP2912506B2 (ja) 1992-10-21 1992-10-21 透明導電膜の形成方法
JP92-283299 1992-10-21

Publications (2)

Publication Number Publication Date
KR940009732A KR940009732A (ko) 1994-05-24
KR970004557B1 true KR970004557B1 (ko) 1997-03-29

Family

ID=17663657

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930021848A Expired - Fee Related KR970004557B1 (ko) 1992-10-21 1993-10-20 투명도전막의 형성방법

Country Status (6)

Country Link
US (1) US5538905A (cg-RX-API-DMAC10.html)
EP (1) EP0595542B1 (cg-RX-API-DMAC10.html)
JP (1) JP2912506B2 (cg-RX-API-DMAC10.html)
KR (1) KR970004557B1 (cg-RX-API-DMAC10.html)
DE (1) DE69305141T2 (cg-RX-API-DMAC10.html)
TW (1) TW290561B (cg-RX-API-DMAC10.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
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US6143081A (en) * 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
JPH117035A (ja) * 1997-04-23 1999-01-12 Sharp Corp 液晶表示装置及びその製造方法
US5937272A (en) * 1997-06-06 1999-08-10 Eastman Kodak Company Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate
JPH1129863A (ja) * 1997-07-10 1999-02-02 Canon Inc 堆積膜製造方法
US6379509B2 (en) 1998-01-20 2002-04-30 3M Innovative Properties Company Process for forming electrodes
DE10023459A1 (de) * 2000-05-12 2001-11-15 Balzers Process Systems Gmbh Indium-Zinn-Oxid (ITO)-Schicht und Verfahren zur Herstellung derselben
US20020086188A1 (en) * 2000-10-12 2002-07-04 Eugene Halsey Reduced contrast improved transmission conductively coated transparent substrate
US6743488B2 (en) 2001-05-09 2004-06-01 Cpfilms Inc. Transparent conductive stratiform coating of indium tin oxide
KR100483988B1 (ko) * 2001-11-29 2005-04-15 삼성에스디아이 주식회사 투명도전막의 투과도 변형방법
US6748264B2 (en) 2002-02-04 2004-06-08 Fook Tin Technologies Limited Body fat analyzer with integral analog measurement electrodes
US7165323B2 (en) 2003-07-03 2007-01-23 Donnelly Corporation Method of manufacturing a touch screen
US20060003485A1 (en) * 2004-06-30 2006-01-05 Hoffman Randy L Devices and methods of making the same
US7645618B2 (en) * 2004-09-09 2010-01-12 Tegal Corporation Dry etch stop process for eliminating electrical shorting in MRAM device structures
US8354143B2 (en) * 2005-05-26 2013-01-15 Tpk Touch Solutions Inc. Capacitive touch screen and method of making same
WO2009018094A1 (en) * 2007-07-27 2009-02-05 Donnelly Corporation Capacitive sensor and method for manufacturing same
ITBO20070544A1 (it) * 2007-08-01 2009-02-02 Univ Bologna Alma Mater Metodo per la preparazione di uno stampo ed uso dello stampo cosi' ottenuto per l'incisione di un substrato
US8610691B2 (en) 2008-08-19 2013-12-17 Tpk Touch Solutions Inc. Resistive touch screen and method for manufacturing same
US9213450B2 (en) * 2008-11-17 2015-12-15 Tpk Touch Solutions Inc. Touch sensor
WO2012020682A1 (ja) * 2010-08-09 2012-02-16 株式会社カネカ 結晶シリコン系太陽電池
JP6101214B2 (ja) * 2012-01-27 2017-03-22 株式会社カネカ 透明電極付き基板およびその製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4121238A (en) * 1977-02-16 1978-10-17 Bell Telephone Laboratories, Incorporated Metal oxide/indium phosphide devices
US4277517A (en) * 1978-07-17 1981-07-07 Rockwell International Corporation Method of forming transparent conductor pattern
JPS6281057A (ja) * 1985-10-04 1987-04-14 Hosiden Electronics Co Ltd 透明導電膜
US4842705A (en) * 1987-06-04 1989-06-27 Siemens Aktiengesellschaft Method for manufacturing transparent conductive indium-tin oxide layers
JPH01302769A (ja) * 1988-05-30 1989-12-06 Seikosha Co Ltd 逆スタガー型シリコン薄膜トランジスタの製造方法
FR2633920B1 (fr) * 1988-07-08 1992-02-21 Saint Gobain Vitrage Procede pour produire une couche transparente a faible resistivite
US5180686A (en) * 1988-10-31 1993-01-19 Energy Conversion Devices, Inc. Method for continuously deposting a transparent oxide material by chemical pyrolysis
US5009922A (en) * 1989-03-02 1991-04-23 Ashahi Glass Company, Ltd. Method of forming a transparent conductive film
JPH0310066A (ja) * 1989-06-06 1991-01-17 Nippon Sheet Glass Co Ltd 透明導電膜の被覆方法
DE68920741T2 (de) * 1989-10-06 1995-05-18 Ulvac Corp Verfahren zur Herstellung eines leitenden, durchsichtigen Films.
JP2936276B2 (ja) * 1990-02-27 1999-08-23 日本真空技術株式会社 透明導電膜の製造方法およびその製造装置
JPH03257717A (ja) * 1990-03-07 1991-11-18 Nitto Denko Corp 透明導電体の製造法
FR2663486B1 (fr) * 1990-06-15 1997-01-24 Thomson Consumer Electronics Dispositif de visualisation ou de projection d'images ou analogues.
JPH0468315A (ja) * 1990-07-09 1992-03-04 Seiko Epson Corp 透明導電膜およびその製造方法
KR960002202B1 (ko) * 1991-02-04 1996-02-13 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 액정 전기 광학 장치 제작 방법
KR960001611B1 (ko) * 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
US5135581A (en) * 1991-04-08 1992-08-04 Minnesota Mining And Manufacturing Company Light transmissive electrically conductive oxide electrode formed in the presence of a stabilizing gas
US5403756A (en) * 1991-11-20 1995-04-04 Sharp Kabushiki Kaisha Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor
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US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same

Also Published As

Publication number Publication date
JP2912506B2 (ja) 1999-06-28
EP0595542A1 (en) 1994-05-04
JPH06139843A (ja) 1994-05-20
EP0595542B1 (en) 1996-10-02
US5538905A (en) 1996-07-23
TW290561B (cg-RX-API-DMAC10.html) 1996-11-11
DE69305141D1 (de) 1996-11-07
DE69305141T2 (de) 1997-03-06
KR940009732A (ko) 1994-05-24

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