TW290561B - - Google Patents
Info
- Publication number
- TW290561B TW290561B TW082108831A TW82108831A TW290561B TW 290561 B TW290561 B TW 290561B TW 082108831 A TW082108831 A TW 082108831A TW 82108831 A TW82108831 A TW 82108831A TW 290561 B TW290561 B TW 290561B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
- C01B13/14—Methods for preparing oxides or hydroxides in general
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Inorganic Chemistry (AREA)
- Liquid Crystal (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Non-Insulated Conductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4283299A JP2912506B2 (ja) | 1992-10-21 | 1992-10-21 | 透明導電膜の形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW290561B true TW290561B (zh) | 1996-11-11 |
Family
ID=17663657
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW082108831A TW290561B (zh) | 1992-10-21 | 1993-10-22 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5538905A (zh) |
EP (1) | EP0595542B1 (zh) |
JP (1) | JP2912506B2 (zh) |
KR (1) | KR970004557B1 (zh) |
DE (1) | DE69305141T2 (zh) |
TW (1) | TW290561B (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6143081A (en) * | 1996-07-12 | 2000-11-07 | Tokyo Electron Limited | Film forming apparatus and method, and film modifying apparatus and method |
JPH117035A (ja) | 1997-04-23 | 1999-01-12 | Sharp Corp | 液晶表示装置及びその製造方法 |
US5937272A (en) * | 1997-06-06 | 1999-08-10 | Eastman Kodak Company | Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate |
JPH1129863A (ja) * | 1997-07-10 | 1999-02-02 | Canon Inc | 堆積膜製造方法 |
US6379509B2 (en) | 1998-01-20 | 2002-04-30 | 3M Innovative Properties Company | Process for forming electrodes |
DE10023459A1 (de) * | 2000-05-12 | 2001-11-15 | Balzers Process Systems Gmbh | Indium-Zinn-Oxid (ITO)-Schicht und Verfahren zur Herstellung derselben |
US20020086188A1 (en) * | 2000-10-12 | 2002-07-04 | Eugene Halsey | Reduced contrast improved transmission conductively coated transparent substrate |
US6743488B2 (en) | 2001-05-09 | 2004-06-01 | Cpfilms Inc. | Transparent conductive stratiform coating of indium tin oxide |
KR100483988B1 (ko) * | 2001-11-29 | 2005-04-15 | 삼성에스디아이 주식회사 | 투명도전막의 투과도 변형방법 |
US6748264B2 (en) | 2002-02-04 | 2004-06-08 | Fook Tin Technologies Limited | Body fat analyzer with integral analog measurement electrodes |
US7165323B2 (en) | 2003-07-03 | 2007-01-23 | Donnelly Corporation | Method of manufacturing a touch screen |
US20060003485A1 (en) * | 2004-06-30 | 2006-01-05 | Hoffman Randy L | Devices and methods of making the same |
US7645618B2 (en) * | 2004-09-09 | 2010-01-12 | Tegal Corporation | Dry etch stop process for eliminating electrical shorting in MRAM device structures |
US8354143B2 (en) * | 2005-05-26 | 2013-01-15 | Tpk Touch Solutions Inc. | Capacitive touch screen and method of making same |
WO2009018094A1 (en) * | 2007-07-27 | 2009-02-05 | Donnelly Corporation | Capacitive sensor and method for manufacturing same |
ITBO20070544A1 (it) * | 2007-08-01 | 2009-02-02 | Univ Bologna Alma Mater | Metodo per la preparazione di uno stampo ed uso dello stampo cosi' ottenuto per l'incisione di un substrato |
US8610691B2 (en) | 2008-08-19 | 2013-12-17 | Tpk Touch Solutions Inc. | Resistive touch screen and method for manufacturing same |
US9213450B2 (en) * | 2008-11-17 | 2015-12-15 | Tpk Touch Solutions Inc. | Touch sensor |
JPWO2012020682A1 (ja) * | 2010-08-09 | 2013-10-28 | 株式会社カネカ | 結晶シリコン系太陽電池 |
JP6101214B2 (ja) * | 2012-01-27 | 2017-03-22 | 株式会社カネカ | 透明電極付き基板およびその製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4121238A (en) * | 1977-02-16 | 1978-10-17 | Bell Telephone Laboratories, Incorporated | Metal oxide/indium phosphide devices |
US4277517A (en) * | 1978-07-17 | 1981-07-07 | Rockwell International Corporation | Method of forming transparent conductor pattern |
JPS6281057A (ja) * | 1985-10-04 | 1987-04-14 | Hosiden Electronics Co Ltd | 透明導電膜 |
US4842705A (en) * | 1987-06-04 | 1989-06-27 | Siemens Aktiengesellschaft | Method for manufacturing transparent conductive indium-tin oxide layers |
JPH01302769A (ja) * | 1988-05-30 | 1989-12-06 | Seikosha Co Ltd | 逆スタガー型シリコン薄膜トランジスタの製造方法 |
FR2633920B1 (fr) * | 1988-07-08 | 1992-02-21 | Saint Gobain Vitrage | Procede pour produire une couche transparente a faible resistivite |
US5180686A (en) * | 1988-10-31 | 1993-01-19 | Energy Conversion Devices, Inc. | Method for continuously deposting a transparent oxide material by chemical pyrolysis |
EP0385475A3 (en) * | 1989-03-02 | 1991-04-03 | Asahi Glass Company Ltd. | Method of forming a transparent conductive film |
JPH0310066A (ja) * | 1989-06-06 | 1991-01-17 | Nippon Sheet Glass Co Ltd | 透明導電膜の被覆方法 |
DE68920741T2 (de) * | 1989-10-06 | 1995-05-18 | Ulvac Corp | Verfahren zur Herstellung eines leitenden, durchsichtigen Films. |
JP2936276B2 (ja) * | 1990-02-27 | 1999-08-23 | 日本真空技術株式会社 | 透明導電膜の製造方法およびその製造装置 |
JPH03257717A (ja) * | 1990-03-07 | 1991-11-18 | Nitto Denko Corp | 透明導電体の製造法 |
FR2663486B1 (fr) * | 1990-06-15 | 1997-01-24 | Thomson Consumer Electronics | Dispositif de visualisation ou de projection d'images ou analogues. |
JPH0468315A (ja) * | 1990-07-09 | 1992-03-04 | Seiko Epson Corp | 透明導電膜およびその製造方法 |
KR960002202B1 (ko) * | 1991-02-04 | 1996-02-13 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 액정 전기 광학 장치 제작 방법 |
US5289030A (en) * | 1991-03-06 | 1994-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide layer |
US5135581A (en) * | 1991-04-08 | 1992-08-04 | Minnesota Mining And Manufacturing Company | Light transmissive electrically conductive oxide electrode formed in the presence of a stabilizing gas |
US5403756A (en) * | 1991-11-20 | 1995-04-04 | Sharp Kabushiki Kaisha | Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor |
EP0566838A3 (en) * | 1992-02-21 | 1996-07-31 | Matsushita Electric Ind Co Ltd | Manufacturing method of thin film transistor |
US5424244A (en) * | 1992-03-26 | 1995-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
-
1992
- 1992-10-21 JP JP4283299A patent/JP2912506B2/ja not_active Expired - Fee Related
-
1993
- 1993-10-20 DE DE69305141T patent/DE69305141T2/de not_active Expired - Fee Related
- 1993-10-20 US US08/139,915 patent/US5538905A/en not_active Expired - Lifetime
- 1993-10-20 KR KR1019930021848A patent/KR970004557B1/ko not_active IP Right Cessation
- 1993-10-20 EP EP93308346A patent/EP0595542B1/en not_active Expired - Lifetime
- 1993-10-22 TW TW082108831A patent/TW290561B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0595542B1 (en) | 1996-10-02 |
KR940009732A (ko) | 1994-05-24 |
KR970004557B1 (ko) | 1997-03-29 |
DE69305141D1 (de) | 1996-11-07 |
US5538905A (en) | 1996-07-23 |
JP2912506B2 (ja) | 1999-06-28 |
JPH06139843A (ja) | 1994-05-20 |
EP0595542A1 (en) | 1994-05-04 |
DE69305141T2 (de) | 1997-03-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |