KR940009732A - 투명도전막의 형성방법 - Google Patents

투명도전막의 형성방법 Download PDF

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Publication number
KR940009732A
KR940009732A KR1019930021848A KR930021848A KR940009732A KR 940009732 A KR940009732 A KR 940009732A KR 1019930021848 A KR1019930021848 A KR 1019930021848A KR 930021848 A KR930021848 A KR 930021848A KR 940009732 A KR940009732 A KR 940009732A
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South Korea
Prior art keywords
forming
transparent conductive
ito film
film
conductive film
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KR1019930021848A
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KR970004557B1 (ko
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유끼야 니시오까
유끼노부 나까다
히데노리 네고또
요시노리 시마다
다께히사 사꾸라이
미끼오 가따야마
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쓰지 하루오
샤프 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14—Methods for preparing oxides or hydroxides in general
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Thin Film Transistor (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Non-Insulated Conductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

투명도전막을 형성하는 방법에 관한 것으로서, 그 방법은 불활성 가스대기중에서 산소원자, 인듐원자 및 주석원자를 포함하는 타게트를 스퍼터링하는 것에 의해 ITO막을 기판상에 형성하는 공정과, 에칭법을 사용하여 상기 ITO막의 소정부분을 선택적으로 제거하는 것에 의해 상기 ITO막을 패터닝하는 공정과, 이온 쇼워 도핑방법을 사용하여 상기 패터닝된 ITO막에 산소를 도포하여, 상기 ITO막에서 투명도전막을 형성하는 공정을 포함한다.

Description

투명도전막의 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 따른 스퍼터링(sputtering) 장치의 단면도이고,
제2도는 액티브매트릭스기판의 평면도이다.

Claims (8)

  1. 불활성가스대기중에서 산소원자, 인듐원자 및 주석원자를 포함하는 타게트를 스퍼터링하는 것에 의해 ITO막을 기판상에 형성하는 공정과, 에칭법을 사용하여 상기 ITO막의 소정부분을 선택적으로 제거하는 것에 의해 상기 ITO막을 패터닝하는 공정과, 이온 쇼워 도핑방법을 사용하여, 상기 패터닝된 ITO막에 산소를 도포하여, 상기 ITO막에서 투명도전막을 형성하는 공정을 포함하는 투명도전막의 형성방법.
  2. 제1항에 있어서, 상기 타게트는 산화주석율 약10wt% 포함하는 산화인듐을 갖는 투명도전막의 형성방법.
  3. 제1항에 있어서, 상기 ITO막을 형성하는 상기 공정은 내부의 기압이 3.0×10-4pa이하의 진공용기에 아르곤가스만을 도입하는 것에 의해 상기 불활성가스대기를 형성하는 공정을 포함하는 투명도전막의 형성방법.
  4. 제3항에 있어서, 상기 ITO막을 형성하는 상기 공정은 상기 진공용기에 기압이 0.24pa를 갖는 상기 아르곤가스를 도입하는 공정을 포함하는 투명전도막의 형성방법.
  5. 제1항에 있어서, 상기 ITO막에 상기 산소를 도포하는 상기 공정에서, 1016에서 1017ion/㎠의 도즈양의 산소를 도포하는 투명도전막의 형성방법.
  6. 제1항에 있어서, 상기 투명도전막을 가열하는 공정을 부가하는 투명도전막의 형성방법.
  7. 제1항에 있어서, 상기 ITO막을 패터닝하는 상기 공정에서, 상기 ITO막의 상기 소정부분이 습식에칭방법을 사용하는 것에 의해 제거되는 투명도전막의 형성방법.
  8. 제1항에 있어서, 상기 ITO막을 패터닝하는 상기 공정은 상기 ITO막상에 상기 ITO막의 상기 소정부분을 규정하는 개구를 갖는 레지스트막을 형성하는 공정과, 상기 레지스트막의 상기 개구를 통하여 노출된 상기 ITO막의 상기 소정부분을 선택적으로 제거하는 공정과, 상기 레지스트막을 제거하는 공정을 포함하는 투명도전막의 형성공정.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930021848A 1992-10-21 1993-10-20 투명도전막의 형성방법 KR970004557B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP92-283299 1992-10-21
JP4283299A JP2912506B2 (ja) 1992-10-21 1992-10-21 透明導電膜の形成方法

Publications (2)

Publication Number Publication Date
KR940009732A true KR940009732A (ko) 1994-05-24
KR970004557B1 KR970004557B1 (ko) 1997-03-29

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US (1) US5538905A (ko)
EP (1) EP0595542B1 (ko)
JP (1) JP2912506B2 (ko)
KR (1) KR970004557B1 (ko)
DE (1) DE69305141T2 (ko)
TW (1) TW290561B (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143081A (en) * 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
JPH117035A (ja) 1997-04-23 1999-01-12 Sharp Corp 液晶表示装置及びその製造方法
US5937272A (en) * 1997-06-06 1999-08-10 Eastman Kodak Company Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate
JPH1129863A (ja) * 1997-07-10 1999-02-02 Canon Inc 堆積膜製造方法
US6379509B2 (en) 1998-01-20 2002-04-30 3M Innovative Properties Company Process for forming electrodes
DE10023459A1 (de) * 2000-05-12 2001-11-15 Balzers Process Systems Gmbh Indium-Zinn-Oxid (ITO)-Schicht und Verfahren zur Herstellung derselben
US20020086188A1 (en) * 2000-10-12 2002-07-04 Eugene Halsey Reduced contrast improved transmission conductively coated transparent substrate
US6743488B2 (en) 2001-05-09 2004-06-01 Cpfilms Inc. Transparent conductive stratiform coating of indium tin oxide
KR100483988B1 (ko) * 2001-11-29 2005-04-15 삼성에스디아이 주식회사 투명도전막의 투과도 변형방법
US6748264B2 (en) 2002-02-04 2004-06-08 Fook Tin Technologies Limited Body fat analyzer with integral analog measurement electrodes
US7165323B2 (en) * 2003-07-03 2007-01-23 Donnelly Corporation Method of manufacturing a touch screen
US20060003485A1 (en) * 2004-06-30 2006-01-05 Hoffman Randy L Devices and methods of making the same
US7645618B2 (en) * 2004-09-09 2010-01-12 Tegal Corporation Dry etch stop process for eliminating electrical shorting in MRAM device structures
US8354143B2 (en) * 2005-05-26 2013-01-15 Tpk Touch Solutions Inc. Capacitive touch screen and method of making same
WO2009018094A1 (en) * 2007-07-27 2009-02-05 Donnelly Corporation Capacitive sensor and method for manufacturing same
ITBO20070544A1 (it) * 2007-08-01 2009-02-02 Univ Bologna Alma Mater Metodo per la preparazione di uno stampo ed uso dello stampo cosi' ottenuto per l'incisione di un substrato
US8610691B2 (en) 2008-08-19 2013-12-17 Tpk Touch Solutions Inc. Resistive touch screen and method for manufacturing same
US9213450B2 (en) * 2008-11-17 2015-12-15 Tpk Touch Solutions Inc. Touch sensor
JPWO2012020682A1 (ja) * 2010-08-09 2013-10-28 株式会社カネカ 結晶シリコン系太陽電池
WO2013111681A1 (ja) * 2012-01-27 2013-08-01 株式会社カネカ 透明電極付き基板およびその製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4121238A (en) * 1977-02-16 1978-10-17 Bell Telephone Laboratories, Incorporated Metal oxide/indium phosphide devices
US4277517A (en) * 1978-07-17 1981-07-07 Rockwell International Corporation Method of forming transparent conductor pattern
JPS6281057A (ja) * 1985-10-04 1987-04-14 Hosiden Electronics Co Ltd 透明導電膜
US4842705A (en) * 1987-06-04 1989-06-27 Siemens Aktiengesellschaft Method for manufacturing transparent conductive indium-tin oxide layers
JPH01302769A (ja) * 1988-05-30 1989-12-06 Seikosha Co Ltd 逆スタガー型シリコン薄膜トランジスタの製造方法
FR2633920B1 (fr) * 1988-07-08 1992-02-21 Saint Gobain Vitrage Procede pour produire une couche transparente a faible resistivite
US5180686A (en) * 1988-10-31 1993-01-19 Energy Conversion Devices, Inc. Method for continuously deposting a transparent oxide material by chemical pyrolysis
US5009922A (en) * 1989-03-02 1991-04-23 Ashahi Glass Company, Ltd. Method of forming a transparent conductive film
JPH0310066A (ja) * 1989-06-06 1991-01-17 Nippon Sheet Glass Co Ltd 透明導電膜の被覆方法
EP0421015B1 (en) * 1989-10-06 1995-01-18 Nihon Shinku Gijutsu Kabushiki Kaisha Process for producing transparent conductive film
JP2936276B2 (ja) * 1990-02-27 1999-08-23 日本真空技術株式会社 透明導電膜の製造方法およびその製造装置
JPH03257717A (ja) * 1990-03-07 1991-11-18 Nitto Denko Corp 透明導電体の製造法
FR2663486B1 (fr) * 1990-06-15 1997-01-24 Thomson Consumer Electronics Dispositif de visualisation ou de projection d'images ou analogues.
JPH0468315A (ja) * 1990-07-09 1992-03-04 Seiko Epson Corp 透明導電膜およびその製造方法
KR960002202B1 (ko) * 1991-02-04 1996-02-13 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 액정 전기 광학 장치 제작 방법
US5289030A (en) * 1991-03-06 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide layer
US5135581A (en) * 1991-04-08 1992-08-04 Minnesota Mining And Manufacturing Company Light transmissive electrically conductive oxide electrode formed in the presence of a stabilizing gas
US5403756A (en) * 1991-11-20 1995-04-04 Sharp Kabushiki Kaisha Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor
EP0566838A3 (en) * 1992-02-21 1996-07-31 Matsushita Electric Ind Co Ltd Manufacturing method of thin film transistor
US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same

Also Published As

Publication number Publication date
US5538905A (en) 1996-07-23
JP2912506B2 (ja) 1999-06-28
EP0595542B1 (en) 1996-10-02
EP0595542A1 (en) 1994-05-04
DE69305141D1 (de) 1996-11-07
DE69305141T2 (de) 1997-03-06
JPH06139843A (ja) 1994-05-20
TW290561B (ko) 1996-11-11
KR970004557B1 (ko) 1997-03-29

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