KR970004092A - 평탄화된 박막 트랜지스터의 제조 방법 - Google Patents

평탄화된 박막 트랜지스터의 제조 방법 Download PDF

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KR970004092A
KR970004092A KR1019950018600A KR19950018600A KR970004092A KR 970004092 A KR970004092 A KR 970004092A KR 1019950018600 A KR1019950018600 A KR 1019950018600A KR 19950018600 A KR19950018600 A KR 19950018600A KR 970004092 A KR970004092 A KR 970004092A
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South Korea
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forming
thin film
film transistor
pattern
film
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KR1019950018600A
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KR0167885B1 (ko
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황준
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김주용
현대전자산업 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은 스태틱 램(SRAM)에서 높은 부하 저항기로 이용되는 박막 트랜지스터의 평탄화 방법 및 그 평탄화된 구조를 갖는 박막 트랜지스터에 관한 것이다.
이와 같은 본 발명의 평탄화된 박막 트랜지스터의 제조방법은 반도체 기판위에 게이트 산화막을 소정 두께로 형성한 다음, 폴리 실리콘을 증착하여 게이트 패턴을 형성하는 공정과, 형성된 게이트 패턴을 포함한 기판 상부 전면에 SOG막을 소정두께로 형성하는 공정과, 형성된 SOG막을 게인트 패턴이 드러나는 엔드 포인트(End Point)까지 식각하는 공정과, 식각된SOG 막과 게이트 폴리 실리콘 패턴 위에 질화막을 소정 두께로 형성하는 공정과, 상기 질화막위에 소오스/드레인 영역을형성하는 공정을 포함하는 것을 특징으로 한다.

Description

평탄화된 박막 트랜지스터의 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
첨부한 도면은 본 발명의 기술에 따른 평탄화된 박막 트랜지스터의 제조방법을 설명하기 위한 흐름도.

Claims (3)

  1. 반도체 기판위에 게이트 산화막을 소정 두께로 형성한 다음, 폴리 실리콘을 증착하여 게이트 패턴을 형성하는 공정과 형성된 게이트 패턴을 포함한 기판 상부 전면에 SOG막을 소정 두께로 형성하는 공정과, 형성된 SOG막을 게이트 패턴이 드러나는 엔드 포인트(End Point)까지 식각하는 공정과, 식각된 SOG막과 게이트 폴리 실리콘 패턴 위에 질화막을 소정 두께로 형성하는 공정과, 상기 질화막위에 소오스/드레인 영역을 형성하는 공정을 포함하는 것을 특징으로 하는평탄화 박막 트랜지스터의 제조방법.
  2. 제1항에 있어서, 상기 식각공정은 블랑킷 식각방식을 이용하는 것을 특징으로 하는 반도체 소자의 평탄화된 박막트랜지스터의 제조방법.
  3. 제1항에 있어서, 상기 질화막은 100~300Å두께로 증착하는 것을 특징으로 하는 평탄화된 박막 트랜지스터의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950018600A 1995-06-30 1995-06-30 평탄화된 박막 트랜지스터 제조 방법 KR0167885B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950018600A KR0167885B1 (ko) 1995-06-30 1995-06-30 평탄화된 박막 트랜지스터 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950018600A KR0167885B1 (ko) 1995-06-30 1995-06-30 평탄화된 박막 트랜지스터 제조 방법

Publications (2)

Publication Number Publication Date
KR970004092A true KR970004092A (ko) 1997-01-29
KR0167885B1 KR0167885B1 (ko) 1999-01-15

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Application Number Title Priority Date Filing Date
KR1019950018600A KR0167885B1 (ko) 1995-06-30 1995-06-30 평탄화된 박막 트랜지스터 제조 방법

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KR0167885B1 (ko) 1999-01-15

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