KR970003196A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR970003196A
KR970003196A KR1019960005478A KR19960005478A KR970003196A KR 970003196 A KR970003196 A KR 970003196A KR 1019960005478 A KR1019960005478 A KR 1019960005478A KR 19960005478 A KR19960005478 A KR 19960005478A KR 970003196 A KR970003196 A KR 970003196A
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KR
South Korea
Prior art keywords
power supply
potential side
supply line
side power
line
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Application number
KR1019960005478A
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English (en)
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KR100228471B1 (ko
Inventor
도시야 우찌다
Original Assignee
세키사와 다다시
후지쓰 가부시키가이샤
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Application filed by 세키사와 다다시, 후지쓰 가부시키가이샤 filed Critical 세키사와 다다시
Publication of KR970003196A publication Critical patent/KR970003196A/ko
Application granted granted Critical
Publication of KR100228471B1 publication Critical patent/KR100228471B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

신호선 사이에 전원선을 배선해서되는 반도체 장치, 예를 들면, 센스앰프의 선택을 하기 위한 컬럼선택신호선 사이에, 센스앰프구동회로에 전원전압을 공급하기 위한 전원선을 배선해서되는 DRAM에 관하여, 고전위축전원선과의 먼지에 의한 단락로 하게 되는 컬럼선택신호선의 발생확률을 줄여서 남는 비율의 향상을 도모한다.
센스앰프구동회로에 전원전압 VCC을 공급하는 전원선과, 센스앰프구동회로에 전원전압 VSS를 공급하는 전원선을, 컬럼선택신호선을 끼워서 동일전위의 전원선이 2개연속하여 배선되도록 반복하여 배선한다.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예의 요부를 표시하는 개략적 평면도, 제2도는 제2도에 표시하는 Y-Y선에 따른 단면중, 컬럼선택신호선과 센스앰프구동회로에 전원전압을 공급하는 전원선의 단면만을 표시하는 개략적단면도, 제4도는 본 발명의 제2실시예의 요부를 표시하는 개략적평면도, 제5도는 제4도에 표시하는 Z-Z선에 따른 단면중, 컬럼선택신호선과 센스앰프구동회로에 전원전압을 공급하는 전원선의 단면만을 표시하는 개략적단면도.

Claims (4)

  1. 복수의 신호선, 복수의 고전위측전원선과, 복수의 저전위측전원선을, 신호선 사이에 1개의 고전위측전원선 또는 저전위측전원선이 배선되도록 평행하여 배선하는 부분을 가지는 반도체장치에 있어서, 상기 신호선을 끼워서 동일전위의 전원선이 복수개연속하도록, 상기 고전위측전원선과, 상기 저전위측전원선을 반복하여 배선하여 있는 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 신호선과 상기 고전위측전원선과 사이의 간격을 상기 신호선과 상기 저전위측전원선과의 간격보다 더 넓게하고 있는 것을 특징으로 하는 반도체장치.
  3. 제1항에 있어서, 상기 저전위측전원선의 선단을 상기 고전위측전원선의 선단보다 더 넓게 하고 있는 것을 특징으로 하는 반도체 장치.
  4. 제1항, 제2항 또는 제3항에 있어서, 상기 신호선은, 메모리셀을 배열하여서 되는 컬럼마다 설치되어 있는 센스앰프를 선택하기 위한 컬럼선택신호선이고, 상기 고전위측전원선 및 상기 저전위측전원선은, 상기 센스앰프를 구동하는 센스앰프구동회로에 고전위측전원전압과 저전위측전원전압을 공급하기 위한 전원선인 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960005478A 1995-06-16 1996-03-02 반도체 장치 KR100228471B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-150033 1995-06-16
JP15003395A JP3296142B2 (ja) 1995-06-16 1995-06-16 半導体メモリ

Publications (2)

Publication Number Publication Date
KR970003196A true KR970003196A (ko) 1997-01-28
KR100228471B1 KR100228471B1 (ko) 1999-11-01

Family

ID=15488037

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960005478A KR100228471B1 (ko) 1995-06-16 1996-03-02 반도체 장치

Country Status (3)

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US (1) US5598363A (ko)
JP (1) JP3296142B2 (ko)
KR (1) KR100228471B1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2921463B2 (ja) * 1996-01-30 1999-07-19 日本電気株式会社 半導体集積回路チップ
JP3013773B2 (ja) * 1996-03-22 2000-02-28 日本電気株式会社 半導体装置
JPH10125793A (ja) * 1996-10-24 1998-05-15 Toshiba Corp 低消費電力集積回路装置
KR100258345B1 (ko) * 1996-11-28 2000-06-01 윤종용 파워라인의 배치구조를 개선한 반도체 메모리 장치
JP4907967B2 (ja) * 2005-12-01 2012-04-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4954161B2 (ja) * 2008-08-20 2012-06-13 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7952229B2 (en) * 2009-02-26 2011-05-31 Himax Technologies Limited Power distribution system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040144A (en) * 1989-11-28 1991-08-13 Motorola, Inc. Integrated circuit with improved power supply distribution
KR940003410B1 (ko) * 1991-08-01 1994-04-21 삼성전자 주식회사 망사 구조의 전원선을 가지는 반도체 메모리 장치
US5260892A (en) * 1991-11-21 1993-11-09 Sun Microsystems, Inc. High speed electrical signal interconnect structure

Also Published As

Publication number Publication date
JPH098241A (ja) 1997-01-10
US5598363A (en) 1997-01-28
JP3296142B2 (ja) 2002-06-24
KR100228471B1 (ko) 1999-11-01

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