KR960030351A - 반도체 소자 제조 방법 - Google Patents

반도체 소자 제조 방법 Download PDF

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KR960030351A
KR960030351A KR1019960002000A KR19960002000A KR960030351A KR 960030351 A KR960030351 A KR 960030351A KR 1019960002000 A KR1019960002000 A KR 1019960002000A KR 19960002000 A KR19960002000 A KR 19960002000A KR 960030351 A KR960030351 A KR 960030351A
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thin film
titanium
forming
layer
wet etching
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KR1019960002000A
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KR100221681B1 (ko
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구니히로 후지이
히로시 이토
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가네코 히사시
닛폰 덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

본 명세서에 개시된 반도체 소자 제조 방법에서는 티타늄 박막(131)이 실리콘 층위에 형성되고, 제1급속열 어닐링처리를 통하여 C49 구조의 티타늄 이규화물 박막(134)가 형성되며, 이어서 티타늄 질화물 박막(132)이 제거된다. 그리고 나서, 형성된 티타늄 이규화물 박막(134)는 상전이되어 C54 구조의 티타늄 이규화물 박막(135a)가 형성되고, 과티타늄 티타늄 규화물 박막(133)이 제2습식 에칭에 의하여 선택적으로 제거된다.

Description

반도체 소자 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1(a)도 내지 제1(e)도는 본 발명의 제1실시예의 각 제조단계를 도시하는 단면도.

Claims (6)

  1. 적어도 소정의 일 도전형(one conductivity type) 영역을 포함하는 실리콘 시판에서 그 표면상의 요소분리 영역(element separating region)에 전계 산화물 박막(field oxidel film)을 형성하는 단계; 상기 실리콘 기판 표면상의 요소 형성 영역(element forming region)에 게이트 산화물 박막(gate oxide film)을 형성하는 단계; 상기 실리콘 기판 표면상의 게이트 전극이 형성될 영역에 고농도(high concentration) 및 원하는 도전형의 다결정 실리콘 박막 패턴을 형성하는 단계; 상기 다결정 실리콘 박막 패턴의 측벽(side wall)상에 절연 박막을 포함하는 측벽 스페이서를 형성하는 단계; 상기 일 도전형 영역의 표면상에서 상기 측벽 스페이서에 자기 정렬된 된 고농도 및 반대 도전형의 확산층을 형성하는 단계; 전체 표면상에 티타늄 박막을 형성하는 단계; 상기 다결정 실리콘 박막 패턴의 상부면(upper surface)과 상기 반대 도전형의 확산층의 표면에서 선택적으로 질소 대기중에서 제1급속 열처리(rapid heat treatment)를 통하여 C49 구조의 티타늄 이규화물 박막(titanium disilicide film)을 형성하는 단계; 제1습식 에칭에 의하여 상기 티타늄 질화물 박막(titanium nitride film)을 선택적으로 제거하는 단계; C49 구조의 상기 티타늄 이규화물 박막을 제2급속 열처리를 통하여 C54 구조의 티타늄 이규화물 박막으로 변환하는 단계; 상기 전계 산화물 박막의 표면과 상기 측벽 스페이서의 표면에 형성된 티타늄 규화물 박막(titanium silicide film)을 제2습식 에칭을 통하여 제거하는 단계를 포함하는 것을 특징으로 하는 반도체 소자 제조 방법.
  2. 제1항에 있어서, 상기 제1습식 에칭이 암모니아수와 과산화수소의 혼합용액 또는 황산과 과산화수소의 혼합 용액에 의하여 수행되는 것을 특징으로 하는 반도체 소자 제조 방법.
  3. 제1항에 있어서, 상기 제2습식 에칭이 암모니아수와 과산화수소의 혼합용액에 의하여 수행되는 것을 특징으로 하는 반도체 소자 제조 방법.
  4. 제2항에 있어서, 상기 제2습식 에칭이 암모니아수와 과산화수소의 혼합용액에 의하여 수행되는 것을 특징으로 하는 반도체 소자 제조 방법.
  5. 실리콘 층 위에 티타늄 박막을 증착하는 단계; 상기 티타늄 박막과 상기 실리콘 층을 반응시켜 C49 구조의 제1티타늄 규화물 층을 형성하기 위한 제1열 처리를 수행하는 단계; 및 상기 제1티타늄 규화물 층을 C54구조의 제2티타늄 규화물 층으로 변환하기 위한 제2열 처리를 수행하는 단계를 포함하는 것을 특징으로 하는 반도체 소자 제조 방법.
  6. 제5항에 있어서, 적어도 상기 제1열처리는 질소 대기 중에서 급속 열처리로서 수행되는 것을 특징으로 하는 반도체 소자 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960002000A 1995-01-30 1996-01-30 반도체 소자 제조 방법 KR100221681B1 (ko)

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JP95-13149 1995-01-30
JP1314995 1995-01-30

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EP0724287A2 (en) 1996-07-31
EP0724287A3 (en) 1999-04-07
US5776822A (en) 1998-07-07
KR100221681B1 (ko) 1999-09-15

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