KR960029866A - 박막트랜지스터 액정디스플레이 소자의 저항부 및 그 제조방법 - Google Patents
박막트랜지스터 액정디스플레이 소자의 저항부 및 그 제조방법 Download PDFInfo
- Publication number
- KR960029866A KR960029866A KR1019950001529A KR19950001529A KR960029866A KR 960029866 A KR960029866 A KR 960029866A KR 1019950001529 A KR1019950001529 A KR 1019950001529A KR 19950001529 A KR19950001529 A KR 19950001529A KR 960029866 A KR960029866 A KR 960029866A
- Authority
- KR
- South Korea
- Prior art keywords
- liquid crystal
- crystal display
- thin film
- film transistor
- transistor liquid
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 8
- 239000010409 thin film Substances 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 claims abstract 15
- 229910052751 metal Inorganic materials 0.000 claims abstract 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract 6
- 239000010408 film Substances 0.000 claims abstract 6
- 238000002161 passivation Methods 0.000 claims abstract 6
- 230000001681 protective effect Effects 0.000 claims abstract 6
- 239000004065 semiconductor Substances 0.000 claims abstract 5
- 239000000758 substrate Substances 0.000 claims abstract 3
- 238000000059 patterning Methods 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
이 발명은 박막트랜지스터 액정디스플레이 소자의 저항부에 관한 것으로, 저항부로써 n+아몰퍼스실리콘 및 실리사이드를이용하므로써 그 면적을 박막트랜지스터 액정디스플레이 소자의 양산에 바람직하도록 한 것으로써, 기판위에 아몰퍼스 실리콘 및 n+아몰퍼스실리콘이 차례로 패턴되어 있는 반도체층과; 상기 반도체층의 상부에 쇼팅바와 패드로 구성된 금속층과; 상기 금속층의 상부에 패턴되어 적층되어 있는 보호막과; 상기 보호막의 상부에 패턴되어 적층되어 있는 제2패드금속층으로 이루어져 있는 것을 특징으로 하는 박막트랜지스터 액정디스플레이 소자의 저항부에 관한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 박막트랜지스터 액정디스플레이 소자의 저항부를 나타낸 단면도이다.
Claims (4)
- 기판(40)위에 아몰퍼스 실리콘(50) 및 n+아몰퍼스실리콘(52)이 차례로 패턴되어 있는 반도체층(50,52)과;상기 반도체층(50,52)의 상부에 쇼팅바(41)와 패드(42)로 구성된 금속층(41,42)과; 상기 금속층(41,42)의 상부에 패턴되어 적층되어 있는 보호막(46)과; 상기 보호막(46)의 상부에 패턴되어 적층되어 있는 제2패드금속층(45)으로 이루어져 있는 박막트랜지스터 액정디스플레이 소자의 저항부.
- 제1항에 있어서, 상기 금속층(41,42)은 Cr, Ti, Mo 등을 이용하는 것을 특징으로 하는 박막트랜지스터 액정디스플레이 소자의 저항부.
- 제1항에 있어서, 상기 보호막(46)은 상기 금속층(41,42) 상부에 패드위보호막콘택구멍(53)과 저항부 보호막콘택구멍(54)을 형성하는 것을 특징으로 하는 박막트랜지스터 액정디스플레이 소자의 저항부.
- 기판(40)위에 아몰퍼스 실리콘(50) 및 n+아몰퍼스실리콘(52)을 연속하여 차례로 적층한 후 패턴하여 반도체층(50,52)을 형성하는 단계와; 상기 반도체층(50,52)의 상부에 소오스/드레인 전극에 사용되는 금속을 적층한 후 패턴하여 쇼팅바(41)와 패드(42)로 구성된 금속층(41,42)을 형성하는 단계와; 상기 금속층(41,42)의 상부에 보호막을 적층한후 패턴하여 보호막(46)을 형성하는 단계와; 상기 보호막(46)의 상부에 화소전극에 사용되는 금속을 적층한 후 패턴하여패드금속층(45)을 형성하는 단계와; 상기 보호막(46)을 마스크로 하여 상기 보호막(46)의 하부에 위치한 금속층(41,45)을식각하는 단계로 이루어져 있는 것을 특징으로 하는 박막트랜지스터 액정디스플레이 소자의 저항부의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950001529A KR0145902B1 (ko) | 1995-01-27 | 1995-01-27 | 박막트랜지스터 액정디스플레이 소자의 저항부 및 그 제조방법 |
US08/593,242 US5828428A (en) | 1995-01-27 | 1996-01-29 | Resistive circuit for a thin film transistor liquid crystal display and a method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950001529A KR0145902B1 (ko) | 1995-01-27 | 1995-01-27 | 박막트랜지스터 액정디스플레이 소자의 저항부 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960029866A true KR960029866A (ko) | 1996-08-17 |
KR0145902B1 KR0145902B1 (ko) | 1998-09-15 |
Family
ID=19407377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950001529A KR0145902B1 (ko) | 1995-01-27 | 1995-01-27 | 박막트랜지스터 액정디스플레이 소자의 저항부 및 그 제조방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US5828428A (ko) |
KR (1) | KR0145902B1 (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR980003731A (ko) * | 1996-06-11 | 1998-03-30 | 김광호 | 표시 패널용 정전 파괴 보호 장치 및 그 제조 방법 |
KR100244182B1 (ko) * | 1996-11-29 | 2000-02-01 | 구본준 | 액정표시장치 |
JPH10268794A (ja) * | 1997-03-26 | 1998-10-09 | Sharp Corp | 表示パネル |
JPH10288950A (ja) * | 1997-04-14 | 1998-10-27 | Casio Comput Co Ltd | 液晶表示装置 |
JP3520396B2 (ja) | 1997-07-02 | 2004-04-19 | セイコーエプソン株式会社 | アクティブマトリクス基板と表示装置 |
JP3580092B2 (ja) * | 1997-08-21 | 2004-10-20 | セイコーエプソン株式会社 | アクティブマトリクス型表示装置 |
CN100517424C (zh) * | 1997-08-21 | 2009-07-22 | 精工爱普生株式会社 | 显示装置 |
KR100271038B1 (ko) * | 1997-09-12 | 2000-11-01 | 구본준, 론 위라하디락사 | 전기적 특성 검사를 위한 단락 배선의 제조 방법 및 그 단락 배선을 포함하는 액티브 기판의 구조(a method for manufacturing a shorting bar probing an electrical state and a structure of an lcd comprising the shorting bar) |
KR100271039B1 (ko) * | 1997-10-24 | 2000-11-01 | 구본준, 론 위라하디락사 | 액정표시장치의 기판의 제조방법(method of manufacturing liquid crystal display) |
US7175422B2 (en) * | 2001-08-06 | 2007-02-13 | Southwest Research Institute | Method for accelerated aging of catalytic converters incorporating injection of volatilized lubricant |
WO2004063799A1 (en) * | 2002-12-03 | 2004-07-29 | Quanta Display Inc. | Method for manufacturing the thin film transistor array |
JP4947801B2 (ja) * | 2007-02-08 | 2012-06-06 | 東芝モバイルディスプレイ株式会社 | 液晶表示装置 |
TWI400785B (zh) * | 2007-07-12 | 2013-07-01 | Chunghwa Picture Tubes Ltd | 主動元件陣列基板 |
JP5228424B2 (ja) * | 2007-09-25 | 2013-07-03 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
GB0810667D0 (en) * | 2008-06-11 | 2008-07-16 | The Technology Partnership Plc | Fluid feed system improvments |
GB0810668D0 (en) * | 2008-06-11 | 2008-07-16 | The Technology Partnership Plc | Fluid feed system improvements |
KR102272789B1 (ko) * | 2014-01-15 | 2021-07-05 | 삼성디스플레이 주식회사 | 표시 패널 및 이를 포함하는 표시 장치 |
CN107316838B (zh) * | 2017-06-30 | 2020-03-10 | 上海中航光电子有限公司 | 阵列基板、制作方法、触控显示面板及触控显示装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2593629B1 (fr) * | 1986-01-27 | 1988-03-18 | Maurice Francois | Ecran d'affichage a matrice active et a redondance lignes et colonnes |
JP2610328B2 (ja) * | 1988-12-21 | 1997-05-14 | 株式会社東芝 | 液晶表示素子の製造方法 |
US5187604A (en) * | 1989-01-18 | 1993-02-16 | Hitachi, Ltd. | Multi-layer external terminals of liquid crystal displays with thin-film transistors |
JP2764139B2 (ja) * | 1989-10-20 | 1998-06-11 | ホシデン・フィリップス・ディスプレイ株式会社 | アクティブマトリックス液晶表示素子 |
JPH0822024A (ja) * | 1994-07-05 | 1996-01-23 | Mitsubishi Electric Corp | アクティブマトリクス基板およびその製法 |
-
1995
- 1995-01-27 KR KR1019950001529A patent/KR0145902B1/ko not_active IP Right Cessation
-
1996
- 1996-01-29 US US08/593,242 patent/US5828428A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR0145902B1 (ko) | 1998-09-15 |
US5828428A (en) | 1998-10-27 |
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