KR970054490A - 박막 트랜지스터 액정 표시 장치의 제조 방법 - Google Patents

박막 트랜지스터 액정 표시 장치의 제조 방법 Download PDF

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KR970054490A
KR970054490A KR1019950061858A KR19950061858A KR970054490A KR 970054490 A KR970054490 A KR 970054490A KR 1019950061858 A KR1019950061858 A KR 1019950061858A KR 19950061858 A KR19950061858 A KR 19950061858A KR 970054490 A KR970054490 A KR 970054490A
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film
laminating
mask
gate
patterning
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KR1019950061858A
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KR100206554B1 (ko
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송준호
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김광호
삼성전자 주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps

Abstract

본 발명은 마스킹 공정 횟수를 줄여 수율을 높이고 제조 비용을 절감하며 화질을 개선시킨 박막 트랜지스터 액정 표시 장치의 제조 방법에 관한 것이다. 기판 위에 도전막인 알루미늄을 적층한 후 제1마스크를 사용하여 게이트 전극과 게이트선을 형성하는 단계, 전면에 게이트 절연막을 적층하고, 이어서 반도체막인 비정질 실리콘막을 적층하고, 이어서 절연막을 적층한 다음, 절연막을 제2마스크를 사용하여 패터닝하여 게이트 전극의 상부에 대응하는 위치에 에치스토퍼를 형성하는 단계, 제3마스크를 사용하여 반도체막을 패터닝하는 단계, 크롬막을 적층한 후 실리사이드막이 형성되게 한 후 크롬막을 전면 식각하는 단계, 투명 도전막과 크롬막을 연속하여 적층한 후 제4마스크를 사용하여 패터닝하여 이중막으로된 소스 전극 및 드레인 전극을 형성하는 단계, 보호막을 적층한 후 제5마스크를 사용하여 상기 크롬막과 함께 패터닝하여 채널부의 화소 전극과, 상기 드레인 전극의 연장선인 게이트 패드부의 게이트 패드막의 일부가 드러나도록 하는 단계를 포함한다.

Description

박막 트랜지스터 액정 표시 장치의 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 실시예에 따른 액정 표시 장치의 박막 트랜지스터 기판의 게이트 패드부를 나타낸 단면도.

Claims (6)

  1. 기판 위에 도전막인 알루미늄을 적층한 후 제1마스크를 사용하여 게이트 전극과 게이트선을 형성하는 단계, 전면에 게이트 절연막을 적층하고, 이어서 반도체막인 비정질 실리콘막을 적층하고, 이어서 절연막을 적층한 다음, 절연막을 제2마스크를 사용하여 패터닝하여 게이트 전극의 상부에 대응하는 위치에 에치스토퍼를 형성하는 단계, 제3마스크를 사용하여 반도체막을 패터닝하는 단계, 크롬막을 적층한 후 실리사이드막이 형성되게 한 후 크롬막을 전면 식각하는 단계, 투명 도전막과 크롬막을 연속하여 적층한 후 제4마스크를 사용하여 패터닝하여 이중막으로된 소스 전극 및 드레인 전극을 형성하는 단계, 보호막을 적층한 후 제5마스크를 사용하여 상기 크롬막과 함께 패터닝하여 채널부의 화소 전극과, 상기 드레인 전극의 연장선인 게이트 패드부의 게이트 패드막의 일부가 드러나도록 하는 단계를 포함하는 박막 트랜지스터 액정 표시 장치의 제조 방법.
  2. 제1항에서, 상기 에치스토퍼를 형성하는 단계와 상기 반도체막을 패터닝하는 단계 사이에 오믹 컨택을 좋게 하기 위해 컨택층을 적층하는 단계를 더 포함하는 박막 트랜지스터 액정 표시 장치의 제조 방법.
  3. 제2항에서, 상기 컨택층은 n+비정질 실리콘막으로 형성하는 박막 트랜지스터 액정 표시 장치의 제조 방법.
  4. 제3항에서, 상기 비정질 실리콘막을 패터닝할 때 컨택층도 동시에 패터닝하는 박막 트랜지스터 액정 표시 장치의 제조 방법.
  5. 제4항에 있어서, 상기 소스/드레인 전극을 마스크로 하여 상기 에치스토퍼의 상부의 컨택층을 식각하는 단계를 더 포함하는 박막 트랜지스터 액정 표시 장치의 제조 방법.
  6. 제1항에 있어서, 상기 비정질 실리콘막 위에 실리사이드를 형성하는 공정을 더 포함하는 박막 트랜지스터 액정 표시 장치의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950061858A 1995-12-28 1995-12-28 박막 트랜지스터 액정 표시 장치의 제조 방법 KR100206554B1 (ko)

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KR1019950061858A KR100206554B1 (ko) 1995-12-28 1995-12-28 박막 트랜지스터 액정 표시 장치의 제조 방법

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KR1019950061858A KR100206554B1 (ko) 1995-12-28 1995-12-28 박막 트랜지스터 액정 표시 장치의 제조 방법

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100476047B1 (ko) * 2001-05-30 2005-03-10 비오이 하이디스 테크놀로지 주식회사 에프.에프.에스 모드의 액정표시장치의 제조방법
KR100508008B1 (ko) * 1997-03-27 2005-11-28 가부시키가이샤 아드반스트 디스프레이 전기광학소자의제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100508008B1 (ko) * 1997-03-27 2005-11-28 가부시키가이샤 아드반스트 디스프레이 전기광학소자의제조방법
KR100476047B1 (ko) * 2001-05-30 2005-03-10 비오이 하이디스 테크놀로지 주식회사 에프.에프.에스 모드의 액정표시장치의 제조방법

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